Spin-dependent thermoelectric transport properties of Cr-doped blue phosphorene

We systematically investigate the thermoelectric properties of the Cr-doped blue phosphorene (blue-P) along the armchair and zigzag directions. First, we find the semiconducting band structure of the blue-P will become spin-polarized due to the Cr-doping, and can be seriously changed by the doping concentration. Then we show the Seebeck coefficient, the electric conductance, the electron thermal conductance, and the figure of meritsZTs are all dependent on the transport directions and doping concentration. However, two pairs of the peaks of the charge and spinZTs can be always observed with the low-height (high-height) pair on the side of the negative (positive) Fermi energy. In addition, at temperature 300 K the extrema of the charge (spin)ZTs of the blue-P along the two directions are kept to be larger than 22 (90) for the different doping concentrations and will be further enhanced at lower temperature. Therefore, we believe the Cr-doped blue-P should be a versatile high-performance thermoelectric material which may be used in the fields of the thermorelectrics and spin caloritronics.

Graph Neural Network Guided Evolutionary Search of Grain Boundaries in 2D Materials

Grain boundaries (GBs) in two-dimensional (2D) materials are known to dramatically impact material properties ranging from the physical, chemical, mechanical, electronic, and optical, to name a few. Predicting a range of physically realistic GB structures for 2D materials is critical to exercising control over their properties. This, however, is nontrivial given the vast structural and configurational (defect) search space between lateral 2D sheets with varying misfits. Here, in a departure from traditional evolutionary search methods, we introduce a workflow that combines the Graph Neural Network (GNN) and an evolutionary algorithm for the discovery and design of novel 2D lateral interfaces. We use a representative 2D material, blue phosphorene (BP), and identify 2D GB structures to test the efficacy of our GNN model. The GNN was trained with a computationally inexpensive machine learning bond order potential (Tersoff formalism) and density functional theory (DFT). Systematic downsampling of the training data sets indicates that our model can predict structural energy under 0.5% mean absolute error with sparse (<2000) DFT generated energy labels for training. We further couple the GNN model with a multiobjective genetic algorithm (MOGA) and demonstrate strong accuracy in the ability of the GNN to predict GBs. Our method is generalizable, is material agnostic, and is anticipated to accelerate the discovery of 2D GB structures.

Structural modification enhances the optoelectronic properties of defect blue phosphorene thin films

Active enhancement of the optical absorption coefficient to improve the light converting efficiency of thin-film solar cell materials is crucial to develop the next-generation solar cell devices. Here we report first-principles calculations with generalized gradient approximation to study the optoelectronic properties of pristine and divacancy (DV) blue phosphorene (BlueP) thin films under structural deformation. We show that instead of formingsp-like covalent bonds as in the pristine BlueP layer, a DV introduces two particular dangling bonds between the voids. Using a microscopic (non-) affine deformation model, we reveal that the orbital hybridization of these dangling bonds is strongly modified in both the velocity and vorticity directions depending on the type of deformation, creating an effective light trap to enhance the material absorption efficiency. Furthermore, this successful light trap is complemented by a clear signature ofσ+πplasmon when a DV BlueP layer is slightly compressive. These results demonstrate a practical approach to tailor the optoelectronic properties of low-dimensional materials and to pave a novel strategy to design functionalized solar cell devices from the bottom-up with selective defects.

Blue and black phosphorene on metal substrates: a density functional theory study

We have performed density functional theory calculations to study blue phosphorene and black phosphorene on metal substrates. The substrates considered are the (111) and (110) surfaces of Al, Cu, Ag, Ir, Pd, Pt and Au and the (0001) and (101¯0) surfaces of Zr and Sc. The formation energyE_Fis negative (energetically favorable) for all 36 combinations of overlayer and substrate. By comparing values of ΔΩ, the change in free energy per unit area, as well as the overlayer-substrate binding energyE_b, we identify that Ag(111), Al(110), Cu(111), Cu(110) and possibly Au(110) may be especially suitable substrates for the synthesis and subsequent exfoliation of blue phosphorene, and the Ag(110) and Al(111) substrates for the synthesis of black phosphorene. However, these conclusions are drawn assuming the source of P atoms is bulk phosphorus, and can alter upon changing synthesis conditions (chemical potential of phosphorus). Thus, when the source of phosphorus atoms is P₄, blue phosphorene is favored only over Pt(111). We find that for all combinations of overlayer and substrate, the charge transfer per bond can be captured by the universal descriptorD=Δχ/ΔR, where ΔχandΔRare, respectively, the differences in electronegativity and atomic size between phosphorus and the substrate metal.

First-principles study on the strain-mediated g-C3N4/blue phosphorene heterostructures for promising photocatalytic performance

Well-designed two-dimensional heterogeneous photocatalysts have attracted significant attention due to the enhancement in visible-light absorption and effective charge separation. In this paper, the electronic and optical properties of g-C₃N₄/BlueP (blue phosphorene) heterojunction under varying strains were investigated systematically by first-principles calculations. The results showed that the type transformation of g-C₃N₄/BlueP heterojunction can be achieved by suitable biaxial strain. The CBM was found to be composed of g-C₃N₄as electron acceptor, while the VBM was contributed by BlueP as electron donor which solved the problem of high electron-hole recombination of type-I heterostructures. The band gap and band edge alignment under -6% to -8% compressive biaxial strain could satisfy the REDOX (reduction-oxidation) potential of photolysis water. A wide optical response range and good absorbance were also observed for the heterostructure under strain, which improved the solar utilization rate compared with individual g-C₃N₄and BlueP.

High-Sensitivity Goos-Hänchen Shifts Sensor Based on BlueP-TMDCs-Graphene Heterostructure

Surface plasmon resonance (SPR) with two-dimensional (2D) materials is proposed to enhance the sensitivity of sensors. A novel Goos–Hänchen (GH) shift sensing scheme based on blue phosphorene (BlueP)/transition metal dichalogenides (TMDCs) and graphene structure is proposed. The significantly enhanced GH shift is obtained by optimizing the layers of BlueP/TMDCs and graphene. The maximum GH shift of the hybrid structure of Ag-Indium tin oxide (ITO)-BlueP/WS₂–graphene is −2361λ with BlueP/WS₂ four layers and a graphene monolayer. Furthermore, the GH shift can be positive or negative depending on the layer number of BlueP/TMDCs and graphene. For sensing performance, the highest sensitivity of 2.767 × 10⁷λ/RIU is realized, which is 5152.7 times higher than the traditional Ag-SPR structure, 2470.5 times of Ag-ITO, 2159.2 times of Ag-ITO-BlueP/WS₂, and 688.9 times of Ag-ITO–graphene. Therefore, such configuration with GH shift can be used in various chemical, biomedical and optical sensing fields.

Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles

We systematically study the device characteristics of the monolayer (ML) blue phosphorene metal-oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum-transport simulations. The ML blue phosphorene MOSFETs show superior performances with ultrashort-channel length. We first predict the ultrascaled ML blue phosphorene MOSFETs with proper doping concentration and underlap structures are compliant with the high-performance (HP) and low-power (LP) requirements of the International Technology Roadmap for Semiconductors in the next decade in the aspects of the on-state current, delay time, and power dissipation. Encouragingly, the performances of the ML blue phosphorene MOSFETs are superior to that of the MOSFETs based on arsenene, antimonene, InSe, etc. in terms of the on-state current at similar device size. We also consider the electron-phonon scattering in 10.2 nm gate ML blue phosphorene MOSFET. It is found that the on-state current with the scattering of the blue phosphorene device is degraded by 25.4 and 23.6% for HP and LP applications, which can also fulfill the HP and LP application target. Therefore, we can deduce that ML blue phosphorene is an alternative channel material to silicon for ultrascaled FETs if the large-scale and high-quality blue phosphorene can be achieved.

Band Gap Modulated by Electronic Superlattice in Blue Phosphorene

Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.

Ultrahigh Storage and Fast Diffusion of Na and K in Blue Phosphorene Anodes

In the wake of blue phosphorene's (BP) computational discovery and experimental realization, it has emerged as a versatile material with interesting optical, electrical, and mechanical properties. In this study, using first principles density functional theory calculations, we have investigated the adsorption and diffusion of Na and K over monolayer BP to assess its suitability as Na-ion and K-ion battery anodes. The optimized adsorption energies were found to be -0.96 eV for Na and -1.54 eV for K, which are sufficiently large to ensure stability and safety during operation. In addition, BP could adsorb Na and K atoms up to a stoichiometric ratio of 1:1 which yields a high storage capacity of 865 mA h/g for both adatom species. Through examination of the electronic structure and projected density of states of BP as a function of Na/K concentration, we predict that the band gap of the system increasingly shrinks, and in the case of maximum K adsorption, the band gap diminishes completely. Additionally, the diffusion of Na and K over BP is observed to be ultrafast, especially for K, and anisotropic with modest energy barriers of 0.11 and 0.093 eV for Na and K, respectively. Building upon these findings, we employed vibrational analysis techniques with transition state theory to incorporate kinetic effects and predicted a diffusivity of 7.2 × 10^-5 cm²/s for Na and 8.58 × 10^-5 cm²/s for K on BP. Given these advantages, that is, ultrahigh capacity, electrical conductivity, and high Na/K diffusivity, we conclude that BP can be considered as an excellent candidate for anodes in Na- and K-ion batteries.

Electronic Properties of h-BCN-Blue Phosphorene van der Waals Heterostructures

Van der Waals heterostructures, a new class of materials made of a vertically selective assembly of various 2D monolayers held together by van der Waals forces, have attracted a great deal of attention due to their promise to deliver novel electronic and optoelectronic properties that are not achievable by using individual 2D crystals. Using density functional theory (DFT), it is revealed that van der Waals heterostructures composed of monolayers of hexagonal boron nitride (h-BN) and the latest P allotrope blue phosphorus (blue phosphorene, BlueP) forms a straddling type I band offset for which the band edges exclusively belong to BlueP. This feature enables h-BN to act as a protective coating material to resolve the air instability of BlueP. Furthermore, substitutional doping of C into h-BN (h-BCN) at a suitable concentration induces h-BCN-BlueP into staggered type II band offset. The type II band alignment triggered by the intensified built-in electric field across the sheets implies improved carrier mobility and the suppressed recombination of photogenerated hole pairs. These major benefits can pave the way for the potential functionality of h-BCN-BlueP to be exploited for efficient photovoltaic devices.