Tuneable Current Rectification Through a Designer Graphene Nanoribbon

Unimolecular current rectifiers are fundamental building blocks in organic electronics. Rectifying behavior has been identified in numerous organic systems due to electron-hole asymmetries of orbital levels interfaced by a metal electrode. As a consequence, the rectifying ratio (RR) determining the diode efficiency remains fixed for a chosen molecule-metal interface. Here, a mechanically tunable molecular diode exhibiting an exceptionally large rectification ratio (>105) and reversible direction is presented. The molecular system comprises a seven-armchair graphene nanoribbon (GNR) doped with a single unit of substitutional diboron within its structure, synthesized with atomic precision on a gold substrate by on-surface synthesis. The diboron unit creates half-populated in-gap bound states and splits the GNR frontier bands into two segments, localizing the bound state in a double barrier configuration. By suspending these GNRs freely between the tip of a low-temperature scanning tunneling microscope and the substrate, unipolar hole transport is demonstrated through the boron in-gap state's resonance. Strong current rectification is observed, associated with the varying widths of the two barriers, which can be tuned by altering the distance between tip and substrate. This study introduces an innovative approach for the precise manipulation of molecular electronic functionalities, opening new avenues for advanced applications in organic electronics.

Combining linear-scaling quantum transport and machine-learning molecular dynamics to study thermal and electronic transports in complex materials

We propose an efficient approach for simultaneous prediction of thermal and electronic transport properties in complex materials. Firstly, a highly efficient machine-learned neuroevolution potential (NEP) is trained using reference data from quantum-mechanical density-functional theory calculations. This trained potential is then applied in large-scale molecular dynamics simulations, enabling the generation of realistic structures and accurate characterization of thermal transport properties. In addition, molecular dynamics simulations of atoms and linear-scaling quantum transport calculations of electrons are coupled to account for the electron-phonon scattering and other disorders that affect the charge carriers governing the electronic transport properties. We demonstrate the usefulness of this unified approach by studying electronic transport in pristine graphene and thermoelectric transport properties of a graphene antidot lattice, with a general-purpose NEP developed for carbon systems based on an extensive dataset.

Electronic diffusion in a normal state of high-Tc cuprate YBa2Cu3O6+x

The bad metallic phase with resistivity above the Mott-Ioffe-Regel (MIR) limit, which appears also in cuprate superconductors, was recently understood by cold atom and computer simulations of the Hubbard model via charge susceptibility and charge diffusion constant. However, since reliable simulations can be typically done only at temperatures above the experimental temperatures, the question for cuprate superconductors is still open. This paper addresses this question by resorting to heat transport, which allows for the estimate of electronic diffusion and it further combines it with the resistivity to estimate the charge susceptibility. The doping and temperature dependencies of diffusion constant and charge susceptibilities are shown and discussed for two samples of YBa2Cu3O6+x. Results indicate strongly incoherent transport, mean free path corresponding to the MIR limit for the underdoped sample at temperatures above ~200 K and significant effect of the charge susceptibility on the resistivity.

Inverse-Perovskite Ba3 BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity

High energy-conversion efficiency (ZT) of thermoelectric materials has been achieved in heavy metal chalcogenides, but the use of toxic Pb or Te is an obstacle for wide applications of thermoelectricity. Here, high ZT is demonstrated in toxic-element free Ba3 BO (B = Si and Ge) with inverse-perovskite structure. The negatively charged B ion contributes to hole transport with long carrier life time, and their highly dispersive bands with multiple valley degeneracy realize both high p-type electronic conductivity and high Seebeck coefficient, resulting in high power factor (PF). In addition, extremely low lattice thermal conductivities (κlat ) 1.0-0.4 W m-1  K-1 at T = 300-600 K are observed in Ba3 BO. Highly distorted O-Ba6 octahedral framework with weak ionic bonds between Ba with large mass and O provides low phonon velocities and strong phonon scattering in Ba3 BO. As a consequence of high PF and low κlat , Ba3 SiO (Ba3 GeO) exhibits rather high ZT = 0.16-0.84 (0.35-0.65) at T = 300-623 K (300-523 K). Finally, based on first-principles carrier and phonon transport calculations, maximum ZT is predicted to be 2.14 for Ba3 SiO and 1.21 for Ba3 GeO at T = 600 K by optimizing hole concentration. Present results propose that inverse-perovskites would be a new platform of environmentally-benign high-ZT thermoelectric materials.

Magnetotransport and Fermi surface segmentation in Pauli limited superconductors

We report the first theoretical investigation of the spectroscopic, electrical and optical transport signatures ofd-wave Pauli limited superconductors, based on a non perturbative numerical approach. We demonstrate that the high magnetic field low temperature regime of these materials host a finite momentum paired superconducting phase. Multi-branched dispersion spectra with finite energy superconducting gaps, anisotropic segmentation of the Fermi surface and spatial modulations of the superconducting order characterizes this finite momentum paired phase and should be readily accessible through angle resolved photo emission spectroscopy, quasiparticle interference and differential conductance measurements. Based on the electrical and optical transport properties we capture the non Fermi liquid behavior of these systems at high temperatures, dominated by local superconducting correlations and characterized by resilient quasiparticles which survive the breakdown of the Fermi liquid description. We map out the generic thermal phase diagram of thed-wave Pauli limited superconductors and provide for the first time the accurate estimates of the thermal scales corresponding to the: (a) loss of (quasi) long range superconducting phase coherence (Tc), (b) loss of local pair correlations (Tpg), (c) breakdown of the Fermi liquid theory (Tmax) and cross-over from the non Fermi liquid to the bad metallic phase (TBR). Our thermal phase diagram mapped out on the basis of the spectroscopic and transport properties are found to be in qualitative agreement with the experimental observations on CeCoIn5andκ-BEDT, in terms of the thermodynamic phases and the phase transitions. The results presented in this paper are expected to initiate important transport and spectroscopic experiments on the Pauli limitedd-wave superconductors, providing sharp signatures of the finite momentum Cooper paired state in these materials.

Effect of vacancy defects on anisotropic electronic transport behaviors of CoN4C2 based 2D devices: a first-principles study

The strong anisotropic electronic transport properties of the single-atom-thick material CoN4C2 monolayer hold immense importance for the advancement of the electronics industry. Using density functional theory combined with non-equilibrium Green's function systematically studied the electronic structural properties and anisotropic electronic transport properties of the CoN4C2 monolayer. The results show that Co, N, and C single-atom vacancy defects do not change the electronic properties of the CoN4C2 monolayer, which remains metallic. The pristine device and the devices composed of Co, N single-atom vacancy defects exhibit stronger electronic transport along the armchair direction than the zigzag direction, which exhibit strong anisotropy, and a negative differential resistance (NDR) effect can be observed. In contrast to the results mentioned above, the device with C single-atom vacancy defects only exhibits the NDR effect. Among them, the device with the N single-atom vacancy defect regime exhibits the strongest anisotropy, with an IZ/IA of up to 7.95. Moreover, based on the strongest anisotropy exhibited by N single-atom vacancy defects, we further studied the influence of different sites of the N-atom vacancy on the electronic transport properties of the devices. The results indicate that N-1, N-2, N-3, N-12, N-23, N-123, N-1234, and N-12345 model devices did not change the high anisotropy and NDR effect of the device, and among them the N-1234 exhibits the strongest anisotropy, the IZ/IA reaches 6.12. A significant NDR effect is also observed for the electronic transport along the armchair direction in these devices. However, the current gradually decreases as an increase of the number of N defects. These findings showcase the considerable potential for integration of the CoN4C2 monolayer in switching devices and NDR-based multifunctional nanodevices. .

Roses in the nonperturbative current response of artificial crystals

In two-dimensional artificial crystals with large real-space periodicity, the nonlinear current response to a large applied electric field can feature a strong angular dependence, which encodes information about the band dispersion and Berry curvature of isolated electronic Bloch minibands. Within the relaxation-time approximation, we obtain analytic expressions up to infinite order in the driving field for the current in a band-projected theory with time-reversal and trigonal symmetry. For a fixed field strength, the dependence of the current on the direction of the applied field is given by rose curves whose petal structure is symmetry constrained and is obtained from an expansion in real-space translation vectors. We illustrate our theory with calculations on periodically buckled graphene and twisted double bilayer graphene, wherein the discussed physics can be accessed at experimentally relevant field strengths.

Modulation of spin and charge currents through functionalized 2D diamond devices

In this study, we explore the potential of functionalized two-dimensional (2D) diamond for spin-dependent electronic devices using first-principles calculations. Specifically, we investigate functionalizations with either hydroxyl (-OH) or fluorine (-F) groups. In the case of an isolated layer, we observe that the quantity and distribution of (-OH) or (-F) on the 2D diamond surface significantly influence the sp²/sp³ ratio of the carbon atoms in the layer. As the coverage is reduced, both the band gap and magnetic moment decrease. When the 2D diamond is placed between gold contacts and functionalized with (-OH), it results in a device with lower resistance compared to the (-F) functionalization. We predict that the maximum current achieved in the device increases with decreasing (-OH) surface coverage, while the opposite behavior occurs for (-F). Additionally, the surface coverage alone can alter the direction of current rectification in (-F) functionalized 2D diamonds. For all studied systems, a single spin component contributes to the total current for certain values of applied bias, indicating a spin filter behavior. .

Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions

Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective band structures of both graphene and WS2 are preserved. Therefore, the heterojunction follows a unique Ohm's law at low bias voltages, despite the presence of a certain rotation angle between the two surfaces within the heterojunction. The transmission spectra, the density of states, and the transmission eigenstate are used to investigate the origin and mechanism of unique linear I-V characteristics. This study provides a theoretical framework for designing mixed-dimensional heterojunction nanoelectronic devices.

Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices

In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a single step using hydrochloric acid and that (ii) these hBN crystals allow to fabricate high carrier mobility graphene-hBN devices. By combining spatially-resolved confocal Raman spectroscopy and electrical transport measurements, we confirm the excellent quality of these crystals for high-performance hBN-graphene-based van der Waals heterostructures. The full width at half maximum of the graphene Raman 2D peak is as low as 16 cm-1, and the room temperature charge carrier mobilitiy is around 80 000 cm2/(Vs) at a carrier density 1 × 1012cm-12. This is fully comparable with devices of similar dimensions fabricated using crystalline hBN synthesized by the high pressure and high temperature method. Finally, we show that for exfoliated high-quality hBN flakes with a thickness between 20 and 40 nm the line width of the hBN Raman peak, in contrast to the graphene 2D line width, is not useful for benchmarking hBN in high mobility graphene devices.

Elimination of Interface Energy Barriers Using Dendrimer Polyelectrolytes with Fractal Geometry

In this work we study conjugated polyelectrolyte (CPE) films based on polyamidoamine (PAMAM) dendrimers of generations G1 and G3. These fractal macromolecules are compared to branched polyethylenimine (b-PEI) polymer using methanol as the solvent. All of these materials present a high density of amino groups, which protonated by methoxide counter-anions create strong dipolar interfaces. The vacuum level shift associated to these films on n-type silicon was 0.93 eV for b-PEI, 0.72 eV for PAMAM G1 and 1.07 eV for PAMAM G3. These surface potentials were enough to overcome Fermi level pinning, which is a typical limitation of aluminium contacts on n-type silicon. A specific contact resistance as low as 20 mΩ·cm2 was achieved with PAMAM G3, in agreement with the higher surface potential of this material. Good electron transport properties were also obtained for the other materials. Proof-of-concept silicon solar cells combining vanadium oxide as a hole-selective contact with these new electron transport layers have been fabricated and compared. The solar cell with PAMAM G3 surpassed 15% conversion efficiency with an overall increase of all the photovoltaic parameters. The performance of these devices correlates with compositional and nanostructural studies of the different CPE films. Particularly, a figure-of-merit (Vσ) for CPE films that considers the number of protonated amino groups per macromolecule has been introduced. The fractal geometry of dendrimers leads to a geometric increase in the number of amino groups per generation. Thus, investigation of dendrimer macromolecules seems a very good strategy to design CPE films with enhanced charge-carrier selectivity.

Effect of Transport Properties of Crystalline Transition Metal (Oxy)hydroxides on Oxygen Evolution Reaction

Electronic transport plays a pivotal role in the electrolysis of semiconducting electrocatalysts for oxygen evolution reaction (OER), while it is mostly underestimated and largely unexplored. Here, by investigating the electronic transport behavior of seven archetypical crystalline Co/Ni/Fe-based (oxy)hydroxides (unary, binary, and ternary) under OER potential, we study how and the extent to which it affects the apparent catalytic performances. The electronic transports of unary metal (oxy)hydroxides follow the order of Co > Ni > Fe, and their binary or ternary compounds can generally impose one order of magnitude higher electrical conductivity. By studying the dependence of catalytic performances on electrical conductivities, we further unveil that charge transportability not only determines the electronic accessibility of catalytic nanoparticles but also, to our surprise, regulates the reaction kinetics of the electronically accessible active sites. Remarkably, the regulation extent of reaction kinetics correlates with the electrical conductivities of electrocatalysts, suggesting that the electrocatalytic process is strongly coupled with electronic transport. The work presents an overview of electronic transports of crystalline (oxy)hydroxides under OER potentials and highlights their pivotal role in unfolding catalytic potential, holding both fundamental and technical implications for the screen and design of efficient electrocatalysts.

Metal-insulator crossover in monolayer MoS2

We report on transport measurements in monolayer MoS₂devices, close to the bottom of the
conduction band edge. These devices were annealedin situbefore electrical
measurements. This allows us to obtain good ohmic contacts at low temperatures, and to measure
precisely the conductivity and mobility via four-probe measurements. The measured effective
mobility up to μ_eff= 180 cm²/Vs is among the largest obtained in CVD-grown MoS₂monolayer
devices. These measurements show that electronic transport is of the insulating type for σ≤ 1.4e²/h
and n ≤ 1.7×10¹²cm^-2, and a crossover to a metallic regime is observed above those values. In
the insulating regime, thermally activated transport dominates at high temperature (T > 100 K).
At lower temperatures, conductivity is driven by Efros-Schklovkii variable range hopping in all
measured devices, with a universal and constant hopping prefactor, that is a clear indication that
hopping is not phonon-mediated. At higher carrier density, and high temperature, the conductivity
is well modeled by the Boltzmann equation for a non-interacting Fermi gas, taking into account
both phonon and impurity scatterings. Finally, even if this apparent metal-insulator transition can
be explained by phonon-related phenomena at high temperature, the possibility of a genuine 2D
MIT cannot be ruled out, as we can observe a clear power-law diverging localization length close to
the transition, and a one-parameter scaling can be realized.&#xD.

Roadmap on thermoelectricity

The increasing energy demand and the ever more pressing need for clean technologies of energy conversion pose one of the most urgent and complicated issues of our age. Thermoelectricity, namely the direct conversion of waste heat into electricity, is a promising technique based on a long-standing physical phenomenon, which still has not fully developed its potential, mainly due to the low efficiency of the process. In order to improve the thermoelectric performance, a huge effort is being made by physicists, materials scientists and engineers, with the primary aims of better understanding the fundamental issues ruling the improvement of the thermoelectric figure of merit, and finally building the most efficient thermoelectric devices. In this Roadmap an overview is given about the most recent experimental and computational results obtained within the Italian research community on the optimization of composition and morphology of some thermoelectric materials, as well as on the design of thermoelectric and hybrid thermoelectric/photovoltaic devices.

Theoretical Prediction of Thermoelectric Performance for Layered LaAgOX (X = S, Se) Materials in Consideration of the Four-Phonon and Multiple Carrier Scattering Processes

Inspired by the experimental achievement of layered LaCuOX (X = S, Se) with superior thermoelectric (TE) performance, the TE properties of Ag-based isomorphic LaAgOX are systemically investigated by the first-principles calculation. The LaAgOS and LaAgOSe are direct semiconductors with wide bandgaps of ≈2.50 and ≈2.35 eV. Essential four-phonon and multiple carrier scattering mechanisms are considered in phonon and electronic transport calculations to improve the accuracy of the figure-of-merit (ZT). The p-type LaAgOX (X = S, Se) shows excellent TE performance on account of the large Seebeck coefficient originated from the band convergency and low thermal conductivity caused by the strong phonon-phonon scattering. Consequently, the optimal ZTs along the out-of-plane direction decrease in the order of n-type LaAgOSe (≈2.88) > p-type LaAgOSe (≈2.50) > p-type LaAgOS (≈2.42) > n-type LaAgOS (≈2.27) at 700 K, and the optimal ZTs of ≈1.16 and ≈1.29 are achieved for p-type LaAgOS and LaAgOSe at the same temperature. The present work would provide a deep insight into the phonon and electronic transport properties of LaAgOX (X = S, Se), but also could shed light on the way for the rational design of state-of-the-art heteroanionic materials for TE application.

Crystal growth and electronic properties of LaSbSe

The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials.

Ultrasharp Lateral p-n Junctions in Modulation-Doped Graphene

We demonstrate ultrasharp (≲10 nm) lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first-principles calculations. The p-n junction lies at the boundary between differentially doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of α-RuCl₃ across a thin insulating barrier. We extract the p-n junction contribution to the device resistance to place bounds on the junction width. We achieve an ultrasharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of α-RuCl₃ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and α-RuCl₃ shows potential variations on a sub 10 nm length scale. First-principles calculations reveal that the charge-doping of graphene decays sharply over just nanometers from the edge of the α-RuCl₃ flake.

Clean BN-Encapsulated 2D FETs with Lithography-Compatible Contacts

Device passivation through ultraclean hexagonal BN encapsulation has proven to be one of the most effective ways of constructing high-quality devices with atomically thin semiconductors that preserve the ultraclean interface quality and intrinsic charge transport behavior. However, it remains challenging to integrate lithography-compatible contact electrodes with flexible distributions and patterns. Here, we report the feasibility of a straightforward integration of lithography-defined contacts into BN-encapsulated two-dimensional field-effect transistors (2D FETs), giving rise to overall device quality comparable to the state-of-the-art results from the painstaking pure dry transfer processing. The electronic characterization of FETs consisting of WSe₂ and MoS₂ channels reveals an extremely low scanning hysteresis of ∼2 mV on average, a low density of interfacial charged impurities of ∼10¹¹ cm^-2, and generally high charge mobilities over 1000 cm² V^-1 s^-1 at low temperatures. The overall high device qualities verify the viability of directly integrating lithography-defined contacts into BN-encapsulated devices to exploit their intrinsic charge transport properties for advanced electronics.

Monolayer SnI2: An Excellent p-Type Thermoelectric Material with Ultralow Lattice Thermal Conductivity

Using density functional theory and semiclassical Boltzmann transport equation, the lattice thermal conductivity and electronic transport performance of monolayer SnI₂ were systematically investigated. The results show that its room temperature lattice thermal conductivities along the zigzag and armchair directions are as low as 0.33 and 0.19 W/mK, respectively. This is attributed to the strong anharmonicity, softened acoustic modes, and weak bonding interactions. Such values of the lattice thermal conductivity are lower than those of other famous two-dimensional thermoelectric materials such as MoO₃, SnSe, and KAgSe. The two quasi-degenerate band valleys for the valence band maximum make it a p-type thermoelectric material. Due to its ultralow lattice thermal conductivities, coupled with an ultrahigh Seebeck coefficient, monolayer SnI₂ possesses an ultrahigh figure of merits at 800 K, approaching 4.01 and 3.34 along the armchair and zigzag directions, respectively. The results indicate that monolayer SnI₂ is a promising low-dimensional thermoelectric system, and would stimulate further theoretical and experimental investigations of metal halides as thermoelectric materials.

Mechanical Stress Modulation of Resistance in MoS2 Junctions

Strain engineering is a powerful strategy to control the physical properties of material-enabling devices with enhanced functionality and improved performance. Here, we investigate a modulation of the transport behavior of the two-dimensional MoS₂ junctions under the mechanical stress induced by a tip of an atomic force microscope (AFM). We show that the junction resistance can be reversibly tuned by up to 4 orders of magnitude by altering a tip-induced force. Analysis of the stress-induced evolution of the I-V characteristics indicates a combined effect of the tip-induced strain and strain gradient on the energy barrier height and profile. In addition, we show that the tip-generated flexoelectric effect leads to significant enhancement of the photovoltaic effect in the MoS₂ junctions. A combination of the optical and mechanical stimuli facilitates reversible photomechanical tuning of resistance of the narrow-band 2D semiconductors and development of devices with an enhanced photovoltaic response.

Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures

Experiments investigating magnetic-field-tuned superconductor-insulator transition (HSIT) mostly focus on two-dimensional material systems where the transition and its proximate ground-state phases, often exhibit features that are seemingly at odds with the expected behavior. Here we present a complementary study of a three-dimensional pressure-packed amorphous indium-oxide (InOx) powder where granularity controls the HSIT. Above a low threshold pressure of ∼0.2 GPa, vestiges of superconductivity are detected, although neither a true superconducting transition nor insulating behavior are observed. Instead, a saturation at very high resistivity at low pressure is followed by saturation at very low resistivity at higher pressure. We identify both as different manifestations of anomalous metallic phases dominated by superconducting fluctuations. By analogy with previous identification of the low resistance saturation as a 'failed superconductor', our data suggests that the very high resistance saturation is a manifestation of a 'failed insulator'. Above a threshold pressure of ∼6 GPa, the sample becomes fully packed, and superconductivity is robust, withT_Ctunable with pressure. A quantum critical point atP_C∼ 25 GPa marks the complete suppression of superconductivity. For a finite pressure belowP_C, a magnetic field is shown to induce a HSIT from a true zero-resistance superconducting state to a weakly insulating behavior. Determining the critical field,H_C, we show that similar to the 2D behavior, the insulating-like state maintains a superconducting character, which is quenched at higher field, above which the magnetoresistance decreases to its fermionic normal state value.

Decoding the conductance of disordered nanostructures: a quantum inverse problem

Obtaining conductance spectra for a concentration of disordered impurities distributed over a nanoscale device with sensing capabilities is a well-defined problem. However, to do this inversely, i.e., extracting information about the scatters from the conductance spectrum alone, is not an easy task. In the presence of impurities, even advanced techniques of inversion can become particularly challenging. This article extends the applicability of a methodology we proposed capable of extracting composition information about a nanoscale sensing device using the conductance spectrum. The inversion tool decodes the conductance spectrum to yield the concentration and nature of the disorders responsible for conductance fluctuations in the spectra. We present the method for simple one-dimensional systems like an electron gas with randomly distributed delta functions and a linear chain of atoms. We prove the generality and robustness of the method using materials with complex electronic structures like hexagonal boron nitride, graphene nanoribbons, and carbon nanotubes. We also go on to probe distribution of disorders on the sublattice structure of the materials using the proposed inversion tool.

Predicting Finite-Bias Tunneling Current Properties from Zero-Bias Features: The Frontier Orbital Bias Dependence at an Exemplar Case of DNA Nucleotides in a Nanogap

The electrical current properties of single-molecule sensing devices based on electronic (tunneling) transport strongly depend on molecule frontier orbital energy, spatial distribution, and position with respect to the electrodes. Here, we present an analysis of the bias dependence of molecule frontier orbital properties at an exemplar case of DNA nucleotides in the gap between H-terminated (3, 3) carbon nanotube (CNT) electrodes and its relation to transversal current rectification. The electronic transport properties of this simple single-molecule device, whose characteristic is the absence of covalent bonding between electrodes and a molecule between them, were obtained using density functional theory and non-equilibrium Green's functions. As in our previous studies, we could observe two distinct bias dependences of frontier orbital energies: the so-called strong and the weak pinning regimes. We established a procedure, from zero-bias and empty-gap characteristics, to estimate finite-bias electronic tunneling transport properties, i.e., whether the molecular junction would operate in the weak or strong pinning regime. We also discuss the use of the zero-bias approximation to calculate electric current properties at finite bias. The results from this work could have an impact on the design of new single-molecule applications that use tunneling current or rectification applicable in high-sensitivity sensors, protein, or DNA sequencing.

Transport properties of Heusler compounds and alloys

Heusler compounds are a large group of intermetallic compositions with versatile material properties. In recent times, they are found to be important for their practical applications in the fields of spintronics and shape memory effect. Interestingly, their physical properties can be easily tuned by varying the valence electron concentration through proper doping and substitution. Empirical laws concerning the valence electron concentration, such as Slater-Pauling or Hume-Rothery rules are found to be useful in predicting their electronic, magnetic and structural properties quite accurately. Electrical transport measurements are simple laboratory-based techniques to gather a handful of information on the electronic properties of metals and semiconductors. The present review aimed to provide a comprehensive view of the transport in 3dand 4dtransition metal-based bulk Heusler compositions. The main emphasis is given on resistivity, magnetoresistance, Hall effect, thermopower and spin-dependent transport in spintronics devices. The review primarily focuses on magnetic Heusler compounds and alloys, albeit it also addresses several non-magnetic materials showing superconductivity or large thermopower.

Developments in Synthesis and Potential Electronic and Magnetic Applications of Pristine and Doped Graphynes

Doping and its consequences on the electronic features, optoelectronic features, and magnetism of graphynes (GYs) are reviewed in this work. First, synthetic strategies that consider numerous chemically and dimensionally different structures are discussed. Simultaneous or subsequent doping with heteroatoms, controlling dimensions, applying strain, and applying external electric fields can serve as effective ways to modulate the band structure of these new sp2/sp allotropes of carbon. The fundamental band gap is crucially dependent on morphology, with low dimensional GYs displaying a broader band gap than their bulk counterparts. Accurately chosen precursors and synthesis conditions ensure complete control of the morphological, electronic, and physicochemical properties of resulting GY sheets as well as the distribution of dopants deposited on GY surfaces. The uniform and quantitative inclusion of non-metallic (B, Cl, N, O, or P) and metallic (Fe, Co, or Ni) elements into graphyne derivatives were theoretically and experimentally studied, which improved their electronic and magnetic properties as row systems or in heterojunction. The effect of heteroatoms associated with metallic impurities on the magnetic properties of GYs was investigated. Finally, the flexibility of doped GYs' electronic and magnetic features recommends them for new electronic and optoelectronic applications.

Oxygen effects on the electronic transport in stanene

In this work, we study theoretically the structural, electronic and transport properties of oxidized stanene using a combination of density functional theory (DFT), quantum molecular dynamics and the Landauer-Büttiker theory for the ballistic transport. Our results clearly show that oxygen adsorb onto stanene surface in both molecular or atomic forms, thus causing considerable modifications to its electronic structure and transport properties. Nevertheless, our quantum conductance calculations reveal that, in spite of oxidation, stanene still remains a good conductor that might be applied as field effect transistors, gas sensors and other devices.

Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain

Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve the device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand, using computational predictive methods, which strain tensor leads to the desired properties. In this work, we study germanium (Ge) under an isotropic 3D strain on the basis of first-principles methods. The transport and optical properties are studied by a fully ab initio Boltzmann transport equation and many-body Bethe-Salpeter equation (BSE) approach, respectively. Our findings show that a direct band gap in Ge could be realized with only 0.70% triaxial tensile strain (negative pressure) and without the challenges associated with Sn doping. At the same time, a significant increase in the refractive index and carrier mobility, particularly for electrons, is observed. These results demonstrate that there is a huge potential in exploring the 3D deformation space for semiconductors, and potentially many other materials, to optimize their properties.

Electronic Transport and Corrosion Mechanisms of Graphite-Like Nanocrystalline Carbon Films Used on Metallic Bipolar Plates in Proton-Exchange Membrane Fuel Cells

Nanocrystalline carbon films, which consist of graphite-like nanocrystals within an amorphous carbon matrix, have recently attracted extensive theoretical and experimental attention. Understanding the electronic transport and corrosion mechanisms of graphite-like nanocrystalline carbon films (GNCFs) is essential for their application in proton-exchange membrane fuel cells (PEMFCs). So far, limited progress has been made on the electronic or atomistic understanding of how the degree of structural order and grain boundaries affect the electronic transport and corrosion behaviors of GNCFs. In this work, using the Landauer-Büttiker formula merged with first-principles density functional theory, the conductance of GNCFs is presented as a function of their crystallinity. As the crystallinity decreases, the electron states around the Fermi level are found to be more spatially localized, thus hindering the electronic transport of GNCFs. Additionally, a systemic picture of the chemical reactivity of nanostructured surface in GNCFs toward typical particles existing in PEMFCs is drawn by ab initio molecular dynamics simulations. Systemic experimental investigations on the corrosion mechanisms of GNCFs used in PEMFCs have been conducted in this work. Compared with pure amorphous carbon films, the GNCFs exhibit higher corrosion current densities due to the preferential corrosion in the larger slit pores at the grain boundaries, but their stability in interfacial contact resistance is significantly improved by the embedded graphite-like nanocrystals, which have high levels of resistance to oxygen chemical adsorptions and act as high-speed ways to transport electrons.

High Electronically Conductive Tungsten Phosphate Glass-Ceramics

High electronically conductive tungsten phosphate glass-ceramics have been prepared by the controlled crystallization of binary 60WO₃–40P₂O₅ glass in the temperature range from 700 to 935 °C and for 1 to 24 h. The substantial increase in the conductivity for four orders of magnitude is a result of the formation of electronically conductive W₂O₃(PO₄)₂ and WO₃ phases. At low crystallization temperature the dominant W₂O₃(PO₄)₂ phase is created, whereas at 935 °C for 24 h the formation of semiconducting WO₃ crystallites of an average size of 80 nm enhances the conductivity to the highest value of 1.64 × 10⁻⁴ (Ω cm)^–1 at 30 °C. The course of the crystallization and its impact on this exceptionally high electronic transport of binary tungsten phosphate glass-ceramics has been discussed in detail. Since such highly electronically conductive WO₃-based glass-ceramics have a great potential as cathode/anode materials in solid state batteries and as electrocatalysts in fuel cells, it is of interest to provide a novel insight into the improvement of their electrical properties.

Theory and Computation of Hall Scattering Factor in Graphene

The Hall scattering factor, r, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments, it is usually assumed to be 1. In this paper, we use a combination of analytical and ab initio modeling to determine r in graphene. Although at high carrier densities r ≈ 1 in a wide temperature range, at low doping the temperature dependence of r is very strong with values as high as 4 below 300 K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures, r can instead become as low as 0.5 due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately r in graphene in a wide range of temperatures and carrier densities.

Electronic Transport in the Biopigment Sepia Melanin

Eumelanin is the most common form of the pigment melanin in the human body, with diverse functions including photoprotection, antioxidant behavior, metal chelation, and free radical scavenging. Melanin also plays a role in melanoma skin cancer and Parkinson's disease. Sepia melanin is a natural eumelanin extracted from the ink sac of cuttlefish. Eumelanin is an ideal candidate to eco-design technologies based on abundant, biosourced, and biodegradable organic electronic materials to alleviate the environmental footprint of the electronics sector. Herein, the focus is on the reversible electrical resistive switching in dry and wet Sepia eumelanin pellets, pointing to the possibility of predominant electronic transport satisfying conditio sine qua non to develop melanin-based electronic devices. These findings shed light on the possibility to describe the transport physics of dry eumelanin using the amorphous semiconductor model. Results are of tremendous importance for the development of sustainable organic electronics.

In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate

We use the beam of a transmission electron microscope (TEM) to modulate in situ the current-voltage characteristics of a two-terminal monolayer molybdenum disulfide (MoS₂) channel fabricated on a silicon nitride substrate. Suppression of the two-dimensional (2D) MoS₂ channel conductance up to 94% is observed when the beam hits and charges the substrate surface. Gate-tunable transistor characteristics dependent on beam current are observed even when the beam is up to tens of microns away from the channel. In contrast, conductance remains constant when the beam passes through a micron-sized hole in the substrate. There is no MoS₂ structural damage during gating, and the conductance reverts to its original value when the beam is turned off. We observe on/off ratios up to ∼60 that are largely independent of beam size and channel length. This TEM field-effect transistor architecture with electron beam gating provides a platform for future in situ electrical measurements.

Room-Temperature Transport Properties of Graphene with Defects Derived from Oxo-Graphene

In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications. However, the performance lags behind that of graphene due to lattice defects. Here, the relation between the density of defects in the range of 0.2 % and 1.5 % and the transport properties is quantitatively studied. Therefore, the related flakes of monolayers of graphene were prepared from oxo-functionalized graphene (oxo-G). The morphologic structure of oxo-G was imaged by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Field-effect mobility values were determined to range between 0.3 cm2  V-1  s-1 and 33.2 cm2  V-1  s-1 , which were inversely proportional to the density of defects. These results provide the first quantitative description of the density of defects and transport properties, which plays an important role for potential applications.

Nanoplatelet-Based Light-Emitting Diode and Its Use in All-Nanocrystal LiFi-like Communication

Now that colloidal nanocrystals (NCs) have been integrated as green and red sources for liquid crystal displays, the next challenge for quantum dots is their use in electrically driven light-emitting diodes (LEDs). Among various colloidal NCs, nanoplatelets (NPLs) have appeared as promising candidates for light-emitting devices because their two-dimensional shape allows a narrow luminescence spectrum, directional emission, and high light extraction. To reach high quantum efficiency, it is critical to grow core/shell structures. High temperature growth of the shells seems to be a better strategy than previously reported low-temperature approaches to obtain bright NPLs. Here, we synthesize CdSe/CdZnS core/shell NPLs whose shell alloy content is tuned to optimize the charge injection in the LED structure. The obtained LED has exceptionally low turn-on voltage, long-term stability (>3100 h at 100 cd m^-2), external quantum efficiency above 5%, and luminance up to 35,000 cd m^-2. We study the low-temperature performance of the LED and find that there is a delay of droop in terms of current density as temperature decreases. In the last part of the paper, we design a large LED (56 mm² emitting area) and test its potential for LiFi-like communication. In such an approach, the LED is not only a lightning source but also used to transmit a communication signal to a PbS quantum dot solar cell used as a broadband photodetector. Operating conditions compatible with both lighting and information transfer have been identified. This work paves the way toward an all NC-based communication setup.

Toward Realistic Amorphous Topological Insulators

The topological properties of materials are, until now, associated with the features of their crystalline structure, although translational symmetry is not an explicit requirement of the topological phases. Recent studies of hopping models on random lattices have demonstrated that amorphous model systems show a nontrivial topology. Using ab initio calculations, we show that two-dimensional amorphous materials can also display topological insulator properties. More specifically, we present a realistic state-of-the-art study of the electronic and transport properties of amorphous bismuthene systems, showing that these materials are topological insulators. These systems are characterized by the topological index [Formula: see text]₂ = 1 and bulk-edge duality, and their linear conductance is quantized, [Formula: see text], for Fermi energies within the topological gap. Our study opens the path to the experimental and theoretical investigation of amorphous topological insulator materials.

Tuning Structure and Dynamics of Blue Copper Azurin Junctions via Single Amino-Acid Mutations

In the growing field of biomolecular electronics, blue-copper Azurin stands out as one of the most widely studied protein in single-molecule contacts. Interestingly, despite the paramount importance of the structure/dynamics of molecular contacts in their transport properties, these factors remain largely unexplored from the theoretical point of view in the context of single Azurin junctions. Here we address this issue using all-atom Molecular Dynamics (MD) of Pseudomonas Aeruginosa Azurin adsorbed to a Au(111) substrate. In particular, we focus on the structure and dynamics of the free/adsorbed protein and how these properties are altered upon single-point mutations. The results revealed that wild-type Azurin adsorbs on Au(111) along two well defined configurations: one tethered via cysteine groups and the other via the hydrophobic pocket surrounding the Cu 2 + . Surprisingly, our simulations revealed that single amino-acid mutations gave rise to a quenching of protein vibrations ultimately resulting in its overall stiffening. Given the role of amino-acid vibrations and reorientation in the dehydration process at the protein-water-substrate interface, we suggest that this might have an effect on the adsorption process of the mutant, giving rise to new adsorption configurations.

Mechanical Deformation and Electronic Structure of a Blue Copper Azurin in a Solid-State Junction

Protein-based electronics is an emerging field which has attracted considerable attention over the past decade. Here, we present a theoretical study of the formation and electronic structure of a metal-protein-metal junction based on the blue-copper azurin from pseudomonas aeruginosa. We focus on the case in which the protein is adsorbed on a gold surface and is contacted, at the opposite side, to an STM (Scanning Tunneling Microscopy) tip by spontaneous attachment. This has been simulated through a combination of molecular dynamics and density functional theory. We find that the attachment to the tip induces structural changes in the protein which, however, do not affect the overall electronic properties of the protein. Indeed, only changes in certain residues are observed, whereas the electronic structure of the Cu-centered complex remains unaltered, as does the total density of states of the whole protein.

Rattling-Induced Ultralow Thermal Conductivity Leading to Exceptional Thermoelectric Performance in AgIn5S8

Rattling has emerged as one of the most significant phenomenon for notably reducing the thermal conductivity in complex crystal systems. In this work, using first-principles density functional theory, we found that rattlers can be hosted in simpler crystal systems such as AgIn₅S₈ and CuIn₅S₈. Rattlers Ag and Cu exhibit weak and anisotropic bonding with the neighboring In and S and reside in a very shallow anharmonic potential well. The phonon spectra of these compounds have multiple avoided crossing of optical and acoustic modes, which are a signature of rattling motion. This leads to ultralow thermal conductivity, which is inversely proportional to mass and frequency span of rattling modes. Even though Ag atoms contribute to the valence band states, the rattler modes of Ag do not scatter carriers significantly, leaving the electronic transport virtually unaffected. Moreover, AgIn₅S₈ possesses a combination of heavy and light valence bands resulting in a very high power factor. A combination of favorable thermal and electronic transport results in a very high figure of merit of 2.2 in p-doped AgIn₅S₈ at 1000 K. The proposed idea of having rattlers in simpler systems can be extended to a wider class of materials, which would accelerate the development of thermoelectric modules for waste energy harvesting.

Layer-Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultraflat Metals

Layered materials based on transition-metal dichalcogenides (TMDs) are promising for a wide range of electronic and optoelectronic devices. Realizing such practical applications often requires metal-TMD connections or contacts. Hence, a complete understanding of electronic band alignments and potential barrier heights governing the transport through metal-TMD junctions is critical. However, it is presently unclear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few-layered (1 to 5 layers) MoS₂ immobilized on ultraflat conducting Au surfaces [root-mean-square (rms) surface roughness < 0.2 nm] and indium-tin oxide (ITO) substrates (rms surface roughness < 0.7 nm) forming a vertical metal (CAFM tip)-semiconductor-metal device. We have observed that the current increases with the number of layers up to five layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed how this barrier decreases as the number of layers increases. Using density functional theory calculations, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating TMDs on a transparent ultraflat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of the TMD-metal junction, which depends on the numbers of TMD layers and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Beyond the State of the Art: Novel Approaches for Thermal and Electrical Transport in Nanoscale Devices

Almost any interaction between two physical entities can be described through the transfer of either charge, spin, momentum, or energy. Therefore, any theory able to describe these transport phenomena can shed light on a variety of physical, chemical, and biological effects, enriching our understanding of complex, yet fundamental, natural processes, e.g., catalysis or photosynthesis. In this review, we will discuss the standard workhorses for transport in nanoscale devices, namely Boltzmann's equation and Landauer's approach. We will emphasize their strengths, but also analyze their limits, proposing theories and models useful to go beyond the state of the art in the investigation of transport in nanoscale devices.

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires.

Transport Evidence for Sulfur Vacancies as the Origin of Unintentional n-Type Doping in Pyrite FeS2

Pyrite FeS₂ has long been considered a potential earth-abundant low-cost photovoltaic material for thin-film solar cells but has been plagued by low power conversion efficiencies and open-circuit voltages. Recent efforts have identified a lack of understanding and control of doping, as well as uncontrolled surface conduction, as key roadblocks to the development of pyrite photovoltaics. In particular, while n-type bulk behavior in unintentionally doped single crystals and thin films is speculated to arise from sulfur vacancies (V_S), proof remains elusive. Here, we provide strong evidence, from extensive electronic transport measurements on high-quality crystals, that V_S are deep donors in bulk pyrite. Otherwise identical crystals grown via chemical vapor transport under varied S vapor pressures are thoroughly characterized structurally and chemically, and shown to exhibit systematically different electronic transport. Decreased S vapor pressure during growth leads to reduced bulk resistivity, increased bulk Hall electron density, reduced transport activation energy, onset of positive temperature coefficient of resistivity, and approach to an insulator-metal transition, all as would be expected from increased V_S donor density. Impurity analyses show that these trends are uncorrelated with metal impurity concentration and that extracted donor densities significantly exceed total impurity concentrations, directly evidencing a native defect. Well-controlled, wide-range n-doping of pyrite is thus achieved via the control of V_S concentration, with substantial implications for photovoltaic and other applications. The location of the V_S state within the gap, the influence of specific impurities, unusual aspects to the insulator-metal transition, and the influence of doping on surface conduction are also discussed.

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes

ZnO nanostructures are exceedingly important building blocks for nanodevices due to their wide band gap and large exciton binding energy. However, their electronic transport characteristics are unstable and unrepeatable with external environment variation. Here, we demonstrate that electron transport of an individual ZnO nanowire-based device with the two same electrodes can be controllably modulated by applying a relatively large uni-/bidirectional bias. After being modulated, moreover, their electrical properties can well be maintained at relatively low operation bias and room temperature, demonstrating a memory behavior. The presence of surface states related to lattice periodicity breaking and traps associated with oxygen vacancy (V_o) and zinc interstitial (Zn_i) deep-level defects plays a crucial role in tunable electron transport with a memory feature. For the single nanowire-based two-terminal device, two back-to-back connected surface barrier diodes with series resistance are formed. The filling and emptying of traps near two end electrodes can remarkably adjust the width and height of the surface barrier. At a relatively low bias, the unmodulated conductance is governed by the electron hopping of bulk traps since the height of emptied traps is higher than that of the surface barrier, whereas at a relatively large bias, it is dominated by thermion emission due to a dramatic decrease of the surface barrier width resulting from the electron injection into traps from a negative electrode. Moreover, it will be beneficial for a thin surface barrier to penetrate UV light and separate photoexcited electron-hole pairs. After being asymmetrically modulated by a unidirectional injection, it can be successfully applied to realize a self-driven UV photodetector based on a photovoltaic effect in the symmetrical two-electrode structure. Our work provides a new route to tune electrical properties of nanostructures, which may inspire the development of novel electronic and optoelectronic devices.

In-Gap States and Band-Like Transport in Memristive Devices

Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.

How To Probe the Limits of the Wiedemann-Franz Law at Nanoscale

While the Wiedemann-Franz law is known to be robust for many bulk materials, possible violations have been actively discussed for certain classes of bulk materials such as heavy Fermion materials. At nanoscale on the other hand the limits of the Wiedemann-Franz law and how to probe and control them remains an open question. Therefore, we propose here a systematic way to elucidate the limits of the Wiedemann-Franz law at nanoscale. Using first-principles calculations, we examine the Wiedemann-Franz law in nanoscale conductors, namely in gold and platinum-based atomic wires. We explain the recently observed experimental evidence of the Wiedemann-Franz law in atomic-point contacts, but conversely we show that in regimes not discussed in these experiments notable violations of the Wiedemann-Franz law emerge. Depending on the temperature and gate potential as well as chemical properties and conformation, the violations reach up to 30% for gold and for platinum they can even exceed 350%.

Nanoscale Variable-Area Electronic Devices: Contact Mechanics and Hypersensitive Pressure Application

Nanomembranes (NMs) are freestanding structures with few-nanometer thickness and lateral dimensions up to the microscale. In nanoelectronics, NMs have been used to promote reliable electrical contacts with distinct nanomaterials, such as molecules, quantum dots, and nanowires, as well as to support the comprehension of the condensed matter down to the nanoscale. Here, we propose a tunable device architecture that is capable of deterministically changing both the contact geometry and the current injection in nanoscale electronic junctions. The device is based on a hybrid arrangement that joins metallic NMs and molecular ensembles, resulting in a versatile, mechanically compliant element. Such a feature allows the devices to accommodate a mechanical stimulus applied over the top electrodes, enlarging the junctions' active area without compromising the molecules. A model derived from the Hertzian mechanics is employed to correlate the contact dynamics with the electronic transport in these novel devices denominated as variable-area transport junctions (VATJs). As a proof of concept, we propose a direct application of the VATJs as compression gauges envisioning the development of hypersensitive pressure pixels. Regarding sensitivity (∼480 kPa^-1), the VATJ-based transducers constitute a breakthrough in nanoelectronics, with the prospect of carrying its sister-field of molecular electronics out of the laboratory via integrative, hybrid organic/inorganic nanotechnology.

Anatase TiO2-A Model System for Large Polaron Transport

Large polarons have been of significant recent technological interest as they screen and protect electrons from point-scattering centers. Anatase TiO₂ is a model system for studying large polarons as they can be studied systematically over a wide range of temperature and carrier density. The electronic and magneto transport properties of reduced anatase TiO₂ epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance could be decomposed into a linear and a quadratic component, separately characterizing the carrier transport and trapping as a function of temperature, respectively. The various transport behaviors could be organized into a single phase diagram, which clarifies the evolution of large polaron in this material.

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-magnetic metals (Pt or Au) with large spin-orbit coupling. We also inserted a buffer layer of insulating MgO to mimic the structure and finite resistivity of a real device. We found that, while spin-orbit has a negligible effect on the current flowing through the device, the MgO layer plays a crucial role. Its effect is to decouple the Cr magnetic moment from Pt (or Au) and to develop an overall spin magnetization. We have also calculated the spin-polarized ballistic conductance of the device within the Büttiker⁻Landauer framework, and we have found that for small applied bias our Pt/Cr/MgO/Pt device presents a spin polarization of the current amounting to ≃25%.

Large Scale Parallel DNA Detection by Two-Dimensional Solid-State Multipore Systems

We describe a scalable device design of a dense array of multiple nanopores made from nanoscale semiconductor materials to detect and identify translocations of many biomolecules in a massively parallel detection scheme. We use molecular dynamics coupled to nanoscale device simulations to illustrate the ability of this device setup to uniquely identify DNA parallel translocations. We show that the transverse sheet currents along membranes are immune to the crosstalk effects arising from simultaneous translocations of biomolecules through multiple pores, due to their ability to sense only the local potential changes. We also show that electronic sensing across the nanopore membrane offers a higher detection resolution compared to ionic current blocking technique in a multipore setup, irrespective of the irregularities that occur while fabricating the nanopores in a two-dimensional membrane.

Spin Control Induced by Molecular Charging in a Transport Junction

The ability of molecules to maintain magnetic multistability in nanoscale-junctions will determine their role in downsizing spintronic devices. While spin-injection from ferromagnetic leads gives rise to magnetoresistance in metallic nanocontacts, nonmagnetic leads probing the magnetic states of the junction itself have been considered as an alternative. Extending this experimental approach to molecular junctions, which are sensitive to chemical parameters, we demonstrate that the electron affinity of a molecule decisively influences its spin transport. We use a scanning tunneling microscope to trap a meso-substituted iron porphyrin, putting the iron center in an environment that provides control of its charge and spin states. A large electron affinity of peripheral ligands is shown to enable switching of the molecular S = 1 ground state found at low electron density to S = ¹/₂ at high density, while lower affinity keeps the molecule inactive to spin-state transition. These results pave the way for spin control using chemical design and electrical means.