Hierarchical Low-Temperature n-Type Bi2Te3 with High Thermoelectric Performances

The high performance of a multistage thermoelectric cooler (multi-TEC) used in a wide low-temperature range depends on the optimized thermoelectric (TE) performance of materials during the corresponding working temperature range for each stage. Despite decades of research on the commercial TE materials of Bi2Te3, the main research is still focused on temperatures above 300 K, lacking suitable hierarchical low-temperature n-Bi2Te3 for multistage TEC. In this work, we systematically investigated the influence of doping concentration and matrix material compositions on the TE performance of n-Bi2Te3 below room temperature by the high-energy ball milling and hot deformation. Consequently, two hierarchical n-Bi2Te3 materials with excellent mechanical properties working below 248 and around 298 K, respectively, have been screened out. The Bi2Te2.7Se0.3 + 0.03 wt % TeI4 can be adopted in a low-temperature range that exhibits the high average figure of merit (zTave) of 0.61 within 173-248 K. Meanwhile, the Bi2Te2.7Se0.3 + 0.05 wt % TeI4 sample displays a competitive zTave of 0.85 within 248-298 K, which can be applied above 248 K. The research of hierarchical TE materials provides valuable insights into the high-performance design of multistage TE cooling devices.

Effective Nonstoichiometric Strategy Combined Post-annealing Process for Boosting Thermoelectric Properties in n-Type PbTe

The intrinsic low electrical properties have hindered the enhancement of thermoelectric performance for n-type PbTe over a long period of time, primarily due to the generation of intrinsic Pb vacancies and other defects. In this work, PbTe samples with nonstoichiometric excess Pb atoms were successfully prepared by a melting reaction followed by spark plasma sintering. First, the introduction of precisely controlled excess Pb atoms has effectively eliminated the typical p-n transition phenomenon in PbTe systems by suppressing the generation of Pb vacancies. Further, the vacuum annealing process employed in nonstoichiometric samples increases the carrier mobility significantly because of the improved crystallinity and the lowered holes. Thus, the Hall mobility was optimized from 754.3 to 1215.9 cm2 V-1 s-1, while the power factor was ultimately elevated from 3087.8 to 4565.7 μW m-1 K-2 for the Pb1.03Te sample at 323 K. Benefited from the enhanced electrical transport properties near room temperature, an average zT ∼ 1.03 ranging from 323 to 723 K was achieved, demonstrating an outstanding performance in n-type nondoped PbTe. This work provides guidance for optimizing the thermoelectric performance of n-type PbTe and relevant telluride by reducing vacancies and other defects.

Ultralow Glassy Thermal Conductivity and Controllable, Promising Thermoelectric Properties in Crystalline o-CsCu5S3

We thoroughly investigated the anharmonic lattice dynamics and microscopic mechanisms of the thermal and electronic transport characteristics in orthorhombic o-CsCu5S3 at the atomic level. Taking into account the phonon energy shifts and the wave-like tunneling phonon channel, we predict an ultralow κL of 0.42 w/mK at 300 K with an extremely weak temperature dependence following ∼T-0.33. These findings agree well with experimental values along with the parallel to the Bridgman growth direction. The κL in o-CsCu5S3 is suppressed down to the amorphous limit, primarily due to the unconventional Cu-S bonding induced by the p-d hybridization antibonding state coupled with the stochastic oscillation of Cs atoms. The nonstandard temperature dependence of κL can be traced back to the critical or dominant role of wave-like tunneling of phonon contributions in thermal transport. Moreover, the p-d hybridization of Cu(3)-S bonding results in the formation of a valence band with "pudding-mold" and high-degeneracy valleys, ensuring highly efficient electron transport characteristics. By properly adjusting the carrier concentration, excellent thermoelectric performance is achieved with a maximum thermoelectric conversion efficiency of 18.4% observed at 800 K in p-type o-CsCu5S3. Our work not only elucidates the anomalous electronic and thermal transport behavior in the copper-based chalcogenide o-CsCu5S3 but also provides insights for manipulating its thermal and electronic properties for potential thermoelectric applications.

Inverse-Perovskite Ba3 BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity

High energy-conversion efficiency (ZT) of thermoelectric materials has been achieved in heavy metal chalcogenides, but the use of toxic Pb or Te is an obstacle for wide applications of thermoelectricity. Here, high ZT is demonstrated in toxic-element free Ba3 BO (B = Si and Ge) with inverse-perovskite structure. The negatively charged B ion contributes to hole transport with long carrier life time, and their highly dispersive bands with multiple valley degeneracy realize both high p-type electronic conductivity and high Seebeck coefficient, resulting in high power factor (PF). In addition, extremely low lattice thermal conductivities (κlat ) 1.0-0.4 W m-1  K-1 at T = 300-600 K are observed in Ba3 BO. Highly distorted O-Ba6 octahedral framework with weak ionic bonds between Ba with large mass and O provides low phonon velocities and strong phonon scattering in Ba3 BO. As a consequence of high PF and low κlat , Ba3 SiO (Ba3 GeO) exhibits rather high ZT = 0.16-0.84 (0.35-0.65) at T = 300-623 K (300-523 K). Finally, based on first-principles carrier and phonon transport calculations, maximum ZT is predicted to be 2.14 for Ba3 SiO and 1.21 for Ba3 GeO at T = 600 K by optimizing hole concentration. Present results propose that inverse-perovskites would be a new platform of environmentally-benign high-ZT thermoelectric materials.

Four-phonon scattering of so-As and improvement of the thermoelectric properties by increasing the buckling height

In recent years, more and more thermoelectric (TE) materials have been discovered as the research boom of TE materials advances. However, due to the low conversion efficiency, most of the current TE materials cannot meet the commercial demand. The low-dimensional nanomaterials are promising to break the current status quo of low conversion efficiency of TE materials. Here, we predicted a stable two-dimensional TE material, namely so-As, based on density functional theory. The so-As has an ultra-low lattice thermal conductivity,κl= 1.829 W m-1K-1at 300 K, and when the temperature rises to 700 K theκlis only 0.788 W m-1K-1. This might be caused by the strong anharmonic interaction among the so-As phonon and the out-of-plane vibration of the low-frequency acoustic modes. Moreover, the maximumZTvalue of thep-type so-As is 0.18 at room temperature (0.45 at 700 K), while that of then-type can even reach 0.75 at 700 K. In addition, we have also studied the difference between the four- and three-phonon scattering rates. The increase of scattering channels leads to the ultra-lowκl, which is only 3.33 × 10-4W m-1K-1at room temperature, showing an almost adiabatic property. Finally, we adjust the TE properties of so-As by changing the buckling height. With the buckling height is increased by 2%, the scattering rate of so-As is extremely high. WhenTis 700 K, the maximumZTof then-type is 0.94 (p-type can also reach 0.7), which is 25% higher than the pristine one. Our work reveals the impact of buckling height on the TE figure of merit, which provides a direction for future search and regulation of the highZTTE materials.

Stepwise Alloying in Liquid-like Solid Solutions to Achieve Crystallographic Distortion for Regulating Thermoelectric Transport Behavior

With the surge of energy consumption, environmental-protection Cu2-xSe thermoelectric materials are increasingly attracting attention. In this work, multilayered structures are constructed in Cu2-xSe solid solutions by alloying (SnSe)0.75(AgBiSe2)0.25, which strongly scatters full-wavelength phonons by carefully regulating the crystallographic distortion. By using the stepwise alloying strategies, crystallographic distortion and the resultant strain fields presented in microstructure were strengthened markedly, which enhanced the phonon scattering. Meanwhile, by adjusting the coalloying content of Ag, Bi, and Sn elements, the carrier and phonon transports were well decoupled in p-type Cu2-xSe, and the thermoelectric performance was significantly enhanced. By optimized power factor as well as depressed heat transport originating from the moderate coalloying, the maximum zT of 1.23 at 750 K was achieved in Cu1.9Se - 1 wt % (SnSe)0.75(AgBiSe2)0.25. This study indicated that the stepwise alloying strategy was a suitable method for optimizing zT of Cu2-xSe.

Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites

Thermoelectric technology can be utilized to directly convert waste heat into electricity, aiming at energy harvesting in an environmentally friendly manner. As a promising p-type thermoelectric material, CuInTe2 possesses a high inherent lattice thermal conductivity, which limits the practical implementation in the field of thermoelectricity. Herein, through the combination of vacuum melting and annealing along with hot-pressure sintering techniques, we demonstrated that CuIn0.95Ag0.05Te2 thermoelectric materials with trace Ag doping can exhibit a notably high Seebeck coefficient of 614 μV/K, arising from the high density-of-states effective mass and reduced carrier concentration. Owing to the diminished lattice thermal conductivity derived from Umklapp scattering induced by point defects and dislocation, stemming from the trace Ag doping at In sites rather than Cu sites, CuIn0.95Ag0.05Te2 exhibited a maximum figure of merit (ZT) of 1.38 at 823 K, an 18% enhancement over pristine CuInTe2, leading to a maximum average ZT of 0.67 across temperatures ranging from 303 to 823 K. In essence, our work underscores the efficacy of doping engineering and point defects in tailoring the thermoelectric performance of CuInTe2-based materials. This study not only contributes to advancing the fundamental understanding of thermoelectric enhancement but also lays out a practical pathway toward the realization of high-performance CuInTe2-based thermoelectric materials.

Attaining High Figure of Merit in the N-Type Bi2Te2.7Se0.3-Ag2Te Composite System via Comprehensive Regulation of Its Thermoelectric Properties

n-Type Bi₂Te_2.7Se_0.3 (BTS) is the state-of-the-art thermoelectric material near room temperature. However, the figure of merit ZT of commercial BTS ingots is still limited and further improvement is imperative for their wide applications. Here, the results show that through dispersion of the Ag₂Te nanophase in BTS, one can not only elevate its power factor (PF) by as high as 14% (at 300 K) but also reduce its thermal conductivity κ_tot to as small as ∼29% (at 300 K). Experimental evidences show that the improved PF comes from both increased electron mobility via inhibited Te vacancies and enhanced thermopower due to energy filtering effect, while the reduction of κ_tot originates from the drop of both electronic thermal conductivity largely owing to the reduced number of vacancy V_Te^·· and intensified phonon scattering chiefly from the dispersed Ag₂Te nanophase. Consequently, the largest ZT_max = 1.31 (at 350 K) and average ZT_ave = 1.16 (300-500 K) are achieved for the Bi₂Te_2.7Se_0.3-0.3 wt % Ag₂Te composite sample, leading to a projected conversion efficiency η = 8.3% (300-500 K). The present results demonstrate that incorporation of nanophase Ag₂Te is an effective approach to boosting the thermoelectric performance of BTS.

Doping Copper Selenide for Tuning the Crystal Structure and Thermoelectric Performance of Germanium Telluride-Based Materials

Germanium telluride (GeTe) compounds exhibit excellent thermoelectric performance. In this study, copper selenide (Cu₂Se) was used to tune the crystal structure and carrier concentration (n_H) of GeTe materials. The zT of the 1% Cu₂Se-doped GeTe sample reaches 1.32, which is 52% higher than that of the pure phase. The results show that Cu₂Se tunes the GeTe crystal structure and carrier concentration to achieve promising enhancements to the thermoelectric performance. Meanwhile, a herringbone-like crystal structure that reduces the lattice thermal conductivity was observed. However, because the directional movement of Cu ions at high temperatures leads to an increase in electrical conductivity, the electronic thermal conductivity also increased. This study focuses on crystal engineering strategies for the study of nontoxic thermoelectric materials.

Electrochemical Reduction and Preparation of Cu-Se Thermoelectric Thin Film in Solutions with PEG

Investigation of Cu(II) and Se(IV) electrochemical reduction processes in solutions with poly(ethylene glycol) (PEG) provides important theoretical guidance for the preparation of Cu-Se alloy films with stronger thermoelectric properties. The results reveal that PEG adsorbing on the electrode surface does not affect the electrochemical reduction mechanism of Cu(II), Se(IV), and Cu(II)-Se(IV), but inhibits the electrochemical reduction rates. The surface morphology and composition change with a negative shift in the deposition potentials. The Cu-Se alloy film, which was prepared at 0.04 V, was α-Cu₂Se as-deposited and P-type thermoelectric material after annealing. The highest thermoelectric properties were as follows: Seebeck coefficient (α) was +106 μV·K^-1 and 1.89 times of Cu-Se alloy film electrodeposited in Cu(II)-Se(IV) binary solution without PEG; resistivity (ρ) was 2.12 × 10^-3 Ω·cm, and the calculated power factor (PF) was 5.3 μW·cm^-1K^-2 and 4.07 times that without PEG.

Optimized Thermoelectric Properties of Sulfide Compound Bi(2)SeS(2) by Iodine Doping

The Te-free compound Bi2SeS2 is considered as a potential thermoelectric material with less environmentally hazardous composition. Herein, the effect of iodine (I) substitution on its thermoelectric transport properties was studied. The electrical conductivity was enhanced due to the increased carrier concentration caused by the carrier provided defect Ise. Thus, an enhanced power factor over 690 μWm−1K−2 was obtained at 300 K by combining a moderate Seebeck coefficient above 150 µV/K due to its large effective mass, which indicated iodine was an effective n-type dopant for Bi2SeS2. Furthermore, a large drop in the lattice thermal conductivity was observed due to the enhanced phonon scattering caused by nanoprecipitates, which resulted in a low total thermal conductivity (<0.95 Wm−1K−1) for all doped samples. Consequently, a maximum ZT value of 0.56 was achieved at 773 K for a Bi2Se1−xIxS2 (x = 1.1%) sample, a nearly threefold improvement compared to the undoped sample.

Recent Advances in Materials for Wearable Thermoelectric Generators and Biosensing Devices

Recently, self-powered health monitoring systems using a wearable thermoelectric generator (WTEG) have been rapidly developed since no battery is needed for continuous signal monitoring, and there is no need to worry about battery leakage. However, the existing materials and devices have limitations in rigid form factors and small-scale manufacturing. Moreover, the conventional bulky WTEG is not compatible with soft and deformable tissues, including human skins or internal organs. These limitations restrict the WTEG from stabilizing the thermoelectric gradient that is necessary to harvest the maximum body heat and generate valuable electrical energy. This paper summarizes recent advances in soft, flexible materials and device designs to overcome the existing challenges. Specifically, we discuss various organic and inorganic thermoelectric materials with their properties for manufacturing flexible devices. In addition, this review discusses energy budgets required for effective integration of WTEGs with wearable biomedical systems, which is the main contribution of this article compared to previous articles. Lastly, the key challenges of the existing WTEGs are discussed, followed by describing future perspectives for self-powered health monitoring systems.

Periodic DLC Interlayer-Functionalized Bi-Sb-Te-Based Nanostructures: A Novel Concept for Building Heterogenized Superarchitectures with Enhanced Thermoelectric Performance

According to the innovative design concept of omnidirectional quasi-order hetero-nanocomposites proposed for potentially realizing high thermoelectric performance, a series of superarchitectures consisting of longitudinally periodic diamond-like carbon (DLC) interlayers in latitudinally well-aligned Bi-Sb-Te (BST)-based nanostructures were successfully demonstrated for the first time using dual-beam pulsed laser deposition. This work confirmed that the periodic appearance of DLC is a practical approach to instantly resetting the BST deposition into another new crystal growth cycle. The optimized Seebeck coefficient of ∼500 μV K^-1 and the corresponding power factor of ∼40 μW cm^-1 K^-2 achieved are comparable to or higher than the reported values for BST or BST-based nanocomposites, which evidently originated from the periodically added DLC, as clarified in the Pisarenko plot. In addition, the DLC additives effectively reduce the thermal transport as qualitatively evidenced by micro-Raman characterizations.

Enhanced Thermoelectric Performance of Cu2Se via Nanostructure and Compositional Gradient

Forming co-alloying solid solutions has long been considered as an effective strategy for improving thermoelectric performance. Herein, the dense Cu_2−x(MnFeNi)_xSe (x = 0–0.09) with intrinsically low thermal conductivity was prepared by a melting-ball milling-hot pressing process. The influences of nanostructure and compositional gradient on the microstructure and thermoelectric properties of Cu₂Se were evaluated. It was found that the thermal conductivity decreased from 1.54 Wm⁻¹K⁻¹ to 0.64 Wm⁻¹K⁻¹ at 300 K via the phonon scattering mechanisms caused by atomic disorder and nano defects. The maximum zT value for the Cu_1.91(MnFeNi)_0.09Se sample was 1.08 at 750 K, which was about 27% higher than that of a pristine sample.

Realizing High Thermoelectric Performance in p-Type SnSe Crystals via Convergence of Multiple Electronic Valence Bands

SnSe crystals have gained considerable interest for their outstanding thermoelectric performance. Here, we achieve excellent thermoelectric properties in Sn_0.99-xPb_xZn_0.01Se crystals via valence band convergence and point-defect engineering strategies. We demonstrate that Pb and Zn codoping converges the energy offset between multiple valence bands by significantly modifying the band structure, contributing to the enhancement of the Seebeck coefficient. The carrier concentration and electrical conductivity can be optimized, leading to an enhanced power factor. The dual-atom point-defect effect created by the substitution of Pb and Zn in the SnSe lattice introduces strong phonon scattering, significantly reducing the lattice thermal conductivity to as low as 0.284 W m^-1 K^-1. As a result, a maximum ZT value of 1.9 at 773 K is achieved in Sn_0.93Pb_0.06Zn_0.01Se crystals along the bc-plane direction. This study highlights the crucial role of manipulating multiple electronic valence bands in further improving SnSe thermoelectrics.

Preparation and Characterization of Thermoelectric PEDOT/Te Nanorod Array Composite Films

In this study, we prepared Te nanorod arrays via a galvanic displacement reaction (GDR) on a Si wafer, and their composite with poly(3,4-ethylenedioxythiophene) (PEDOT) were successfully synthesized by electrochemical polymerization with lithium perchlorate (LiClO₄) as a counter ion. The thermoelectric performance of the composite film was optimized by adjusting the polymerization time. As a result, a maximum power factor (PF) of 235 µW/mK² was obtained from a PEDOT/Te composite film electrochemically polymerized for 15 s at room temperature, which was 11.7 times higher than that of the PEDOT film, corresponding to a Seebeck coefficient (S) of 290 µV/K and electrical conductivity (σ) of 28 S/cm. This outstanding PF was due to the enhanced interface interaction and carrier energy filtering effect at the interfacial potential barrier between the PEDOT and Te nanorods. This study demonstrates that the combination of an inorganic Te nanorod array with electrodeposited PEDOT is a promising strategy for developing high-performance thermoelectric materials.

Regularities of Structure Formation in 30 mm Rods of Thermoelectric Material during Hot Extrusion

In this study, Ingots of (Bi, Sb)₂Te₃ thermoelectric material with p-type conductivity have been obtained by hot extrusion. The main regularities of hot extrusion of 30 mm rods have been analyzed with the aid of a mathematical simulation on the basis of the joint use of elastic-plastic body approximations. The phase composition, texture and microstructure of the (Bi, Sb)₂Te₃ solid solutions have been studied using X-ray diffraction and scanning electron microscopy. The thermoelectric properties have been studied using the Harman method. We show that extrusion through a 30 mm diameter die produces a homogeneous strain. The extruded specimens exhibit a fine-grained structure and a clear axial texture in which the cleavage planes are parallel to the extrusion axis. The quantity of defects in the grains of the (Bi, Sb)₂Te₃ thermoelectric material decreases with an increase in the extrusion rate. An increase in the extrusion temperature leads to a decrease in the Seebeck coefficient and an increase in the electrical conductivity. The specimens extruded at 450 °C and a 0.5 mm/min extrusion rate have the highest thermoelectric figure of merit (Z = 3.2 × 10⁻³ K⁻¹).

High-Performance n-Type Ge-Free Silicon Thermoelectric Material from Silicon Waste

Silicon waste (SW), a byproduct from the photovoltaic industry, can be a prospective and environmentally friendly source for silicon in the field of thermoelectric (TE) materials. While thermoelectricity is not as sensitive toward impurities as other semiconductor applications, the impurities within the SW still impede the enhancement of the thermoelectric figure of merit, zT. Besides, the high thermal conductivity of silicon limits its applications as a TE material. In this work, we employ traditionally metallurgical methods in industry reducing the impurities in SW to an extremely low level in an environmentally friendly and economical way, and then the thermal conductivity of purified silicon is greatly reduced due to the implementation of multiscale phonon scattering without degrading the power factor seriously. Benefiting from these strategies, from 323 to 1123 K, for the sample made from purified silicon waste, the average zT, relevant for engineering application, is increased to 0.32, higher than that of the state-of-the-art n-type Ge-free bulk silicon materials made from commercially available silicon, but the total cost of our samples is negligible.

First-principles investigations on a two-dimensional S3N2/black phosphorene van der Waals heterostructure: mechanical, carrier transport and thermoelectric anisotropy

Isolated monolayer two-dimensional (2D) materials have attracted great attentions due to their unique optical, electrical, mechanical, thermoelectric properties and potential applications in nanoelectronic, optoelectronic and thermoelectric devices. However, it more and more difficult to find high performance and multifunctional monolayer 2D materials. The 2D van der Waals (vdW) heterostructure, which holds two different 2D materials together by vdW interactions, has opened up a new horizon in modulation of the energy band structure, the anisotropy of electrons and phonons, and the improvement of their thermoelectric properties for monolayer 2D materials. In this work, we theoretically investigated the anisotropy in the physical properties of 2D vdW heterostructure comprising of monolayer S₃N₂and black phosphorene (BP) using first-principles method. It is demonstrated that the AB₁stacking is the most stable dynamic and thermodynamics in the S₃N₂/BP heterostructure with vdW interaction between layers. The Young's modulus and Poisson's ratio of AB₁stacking along thexdirection are 3 times of those along theydirection. Based on the Boltzmann transport theory within the relaxation time approximation, we demonstrated that AB₁stacking of S₃N₂/BP vdW heterostructure has significant anisotropy in the electron and phonon transport. Due to larger anharmonicity results in larger three-phonon scattering rates, the thermal conductivity of AB₁stacking of this heterostructure is half that of the pristine monolayer BP. We find the one withn-type (p-type) doping exhibits a peak figure of merit (ZT) value of 1.78 (0.52) at 300 K alongxdirection, while those peak ZT value of 2.04 (0.69) alongydirection, exceeding the highest value of the monolayer BP doped withn-type orp-type doping. Our results would pave a way for applications to flexible and thermoelectric 2D materials.

Optimized Electronic Bands and Ultralow Lattice Thermal Conductivity in Ag and Y Codoped SnTe

As a lead-free thermoelectric material, SnTe is inhibited by its inherent high carrier concentration and high thermal conductivity. This work describes the synergistic effect on the modulation of band structure and microstructural defects of SnTe by Ag and Y codoping, which gives rise to band convergence and multiple microstructural defects (secondary phases, dislocations, and boundaries) in the matrix and endows Sn_0.94Ag_0.09Y_0.05Te with an increased power factor of ∼2485 μW m^-1 K^-2, an extremely low lattice thermal conductivity of ∼0.61 W m^-1 K^-1, and a peak zT as high as ∼1.2 at 873 K. This work reveals that the combination of Ag and Y could play a role in the synergistic optimization of electronic and phonon transport properties of SnTe by modifying the band structure and microstructures, providing guidance for enhancing the thermoelectric performance of the relevant materials.

Review of Thermoelectric Generators at Low Operating Temperatures: Working Principles and Materials

Thermoelectric generators (TEGs) are a form of energy harvester and eco-friendly power generation system that directly transform thermal energy into electrical energy. The thermoelectric (TE) method of energy harvesting takes advantage of the Seebeck effect, which offers a simple solution for fulfilling the power-supply demand in almost every electronics system. A high-temperature condition is commonly essential in the working mechanism of the TE device, which unfortunately limits the potential implementation of the device. This paper presents an in-depth analysis of TEGs at low operating temperature. The review starts with an extensive description of their fundamental working principles, structure, physical properties, and the figure of merit (ZT). An overview of the associated key challenges in optimising ZT value according to the physical properties is discussed, including the state of the art of the advanced approaches in ZT optimisation. Finally, this manuscript summarises the research status of Bi2Te3-based semiconductors and other compound materials as potential materials for TE generators working at low operating temperatures. The improved TE materials suggest that TE power-generation technology is essential for sustainable power generation at near-room temperature to satisfy the requirement for reliable energy supplies in low-power electrical/electronics systems.

Effects of the Interface between Inorganic and Organic Components in a Bi2Te3-Polypyrrole Bulk Composite on Its Thermoelectric Performance

We provided a method to hybridize Bi₂Te₃ with polypyrrole, thus forming an inorganic/organic bulk composite (Bi₂Te₃–polypyrrole), in which the effects of energy band junction and phonon scattering were expected to occur at the interface of the two components. Bi₂Te₃–polypyrrole exhibited a considerably high Seebeck coefficient compared to pristine Bi₂Te₃, and thus it recorded a somewhat increased power factor despite the loss in electrical conductivity caused by the organic component, polypyrrole. Bi₂Te₃–polypyrrole also exhibited much lower thermal conductivity than pristine Bi₂Te₃ because of the phonon scattering effect at the interface. We successfully brought about the decoupling phenomenon of electrical and thermal properties by devising an inorganic/organic composite and adjusting its fabrication condition, thereby optimizing its thermoelectric performance, which is considered the predominant property for n-type binary Bi₂Te₃ reported so far.

Generic Seebeck effect from spin entropy

How magnetism affects the Seebeck effect is an important issue of wide concern in the thermoelectric community but remains elusive. Based on a thermodynamic analysis of spin degrees of freedom on varied d-electron-based ferromagnets and antiferromagnets, we demonstrate that in itinerant or partially itinerant magnetic compounds there exists a generic spin contribution to the Seebeck effect over an extended temperature range from slightly below to well above the magnetic transition temperature. This contribution is interpreted as resulting from transport spin entropy of (partially) delocalized conducting d electrons with strong thermal spin fluctuations, even semiquantitatively in a single-band case, in addition to the conventional diffusion part arising from their kinetic degrees of freedom. As a highly generic effect, the spin-dependent Seebeck effect might pave a feasible way toward efficient “magnetic thermoelectrics.”

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Magnetism can offer a significant contribution to thermoelectricity

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A generic Seebeck effect exists in magnetic conductors as a result of transport spin entropy of delocalized d electrons

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The magnetocaloric effect and the Seebeck effect are thermodynamically correlated with each other

Superior Conversion Efficiency Achieved in GeP3/h-BN Heterostructures as Novel Flexible and Ultralight Thermoelectrics

GeP₃ materials are attracting broad research interest due to their typical puckered layer structure, high carrier mobility, and chemical stability. This peculiarity expedites the independent control of anisotropic electrical and thermal conductance, which is thus expected to possess great thermoelectric potential. Nevertheless, the metal characteristics of GeP₃ in the bulk and thick films are adverse to real application because of the low Seebeck coefficient. Thus, it is highly desirable to explore effective solutions to broaden the band gap and also maintain its excellent electrical conductance. Herein, we designed the interlaced GeP₃/hexagonal boron nitride (h-BN) bulk heterostructure using various component thicknesses. By using ab initio calculations based on the Boltzmann transport theory, we found that capping h-BN layer can obviously increase the band gap of the GeP₃ layer by 0.24 eV, and more interestingly, the anisotropic electronic structure in the GeP₃/h-BN heterostructure was accordingly modulated toward a favorable direction for high thermoelectricity. An ultrahigh ZT value of around 5 was predicted at 300 K in p-type GeP₃/h-BN, attributed to the adjusted multivalley band structure. Overall, our work provided an effective route to design novel high-performance thermoelectrics through the appropriate construction of heterostructures.

Emergence of -s, -p-dband inversion in zincblende gold iodide topological insulator and its thermoelectric properties

We employfirst-principlescalculations to investigate the topological states (TS) and thermoelectric (TE) transport properties of three dimensional (3D) gold iodide (AuI) which belongs to the zincblende family. We explore, semi-metal (SM) to topological conductor (TC) and topological insulator (TI) phase transitions. Under pristine conditions, AuI exhibits Dirac SM nature but, under the influence of mild isotropic compressive pressure the system undergoes electronic quantum phase transition driving it into non-trivial topological state. This state exhibits Dresselhaus like band spin splitting leading to a TC state. In order to realize TI state from the SM state, we break the cubic symmetry of the system by introducing a compressive pressure along (001) crystal direction. The non-trivial TI nature of the system is characterized by the emergence of robust surface states and theZ2invariantν0= 1 which indicates a strong TI nature. A novel facet of the phase transition discussed here is, the -sand -p, -dorbital band inversion mechanism which is unconventional as compared to previously explored TI families. This mechanism unravels new path by which TI materials can be predicted. Also, we investigated the lattice and electronic contributions to the TE transport properties. We characterize the TE performance by calculating the figure of merit (zT) and find that, at room temperature (300 K) and for a fixed doping concentration (i.e.,n= 1 × 1019 cm-3) the zT is 0.55 and 0.53 for electrons and holes respectively. This is quite remarkable since, higher values of zT are generally predicted at higher temperature scales whereas, zT values as in the present case are desired at room temperatures for various energy applications. The manifestation of non-trivial TS governed by the unconventional band inversion mechanism and the TE properties of AuI make it a unique multi-functional candidate with probable thermoelectric and spintronic applications.

In Situ Observation of Electron-Beam-Induced Formation of Nano-Structures in PbTe

Nano-scaled thermoelectric materials attract significant interest due to their improved physical properties as compared to bulk materials. Well-shaped nanoparticles such as nano-bars and nano-cubes were observed in the known thermoelectric material PbTe. Their extended two-dimensional nano-layer arrangements form directly in situ through electron-beam treatment in the transmission electron microscope. The experiments show the atomistic depletion mechanism of the initial crystal and the recrystallization of PbTe nanoparticles out of the microparticles due to the local atomic-scale transport via the gas phase beyond a threshold current density of the beam.

Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions

Bi₂Te_2.7Se_0.3 (BTS) is known to be the unique n-type commercial thermoelectric (TE) alloy used at room temperatures, but its figure of merit (ZT) is relatively low, and it is vital to improve its ZT for its wide applications. Here, we show that incorporation of an appropriate amount of GaAs nanoparticles in BTS not only causes the large enhancement of Seebeck coefficients because of energy-dependent carrier scattering, but also gives rise to drastic reduction of lattice thermal conductivity κ_L. Specifically, ultralow κ_L ∼ 0.27W m^-1 K^-1 (at 300 K) is achieved for the composite sample incorporated with a 0.3 wt % GaAs nanophase, which is proved to originate mainly from the intensified phonon scattering by the GaAs nanoinclusions and interfaces between the GaAs and BTS matrix. As a result, a maximum ZT = 1.19 (∼372 K) and an average ZT_ave = 1.01 (at T = 300-550 K) are reached in the composite sample with 0.3 wt % GaAs nanoinclusions, which are respectively ∼78% and ∼82% larger than those of the BTS matrix in this study, demonstrating that incorporation of the GaAs nanophase is an effective way to improve TE performance of BTS.

An Experimental Study on the Thermal Stability of Mg2Si/Ni Interface under Thermal Cycling

Mg₂Si is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped Mg₂Si ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500 h, 500 cycles) temperature cycling from 25 °C to a peak temperature (T_h = 400 and 450 °C) in N₂. The as-sintered Ni/Mg₂Si interfacial region is a multilayer consisting of Mg₃Bi₂, a series of Mg_xSi_yNi_z ternary compounds (ω, ν, ζ, and η-phases), and MgNi₂. In the complex microstructure, the MgNi₂ / η-phase interface was vulnerable to stress-induced voiding at T_h = 450 °C, which arises from the mismatch of the thermal expansion coefficients. Interfacial voiding was avoided by adding 10 mol% Ag in Ni, which is probably due to the suppression of vacancy migration by the Ag-containing 2nd phase formation at the MgNi₂/η-phase interface.

High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces

A Si-based superlattice is one of the promising thermoelectric films for realizing a stand-alone single-chip power supply. Unlike a p-type superlattice (SL) achieving a higher power factor due to strain-induced high hole mobility, in the n-type SL, the strain can degrade the power factor due to lifting conduction band degeneracy. Here, we propose epitaxial Si-rich SiGe/Si SLs with ultrathin Ge segregation interface layers. The ultrathin interface layers are designed to be sufficiently strained, not to give strain to the above Si layers. Therein, a drastic thermal conductivity reduction occurs by larger phonon scattering at the interfaces with the large atomic size difference between Si layers and Ge segregation layers, while unstrained Si layers preserve a high conduction band degeneracy leading to a high Seebeck coefficient. As a result, the n-type Si_0.7Ge_0.3/Si SL with controlled interfaces achieves a higher power factor of ∼25 μW cm^-1 K^-2 in the in-plane direction at room temperature, which is superior to ever reported SiGe-based films: SiGe-based SLs and SiGe films. The Si_0.7Ge_0.3/Si SL with controlled interfaces also exhibits a low thermal conductivity of ∼2.5 W m^-1 K^-1 in the cross-plane direction, which is ∼5 times lower than the reported value in a conventional Si_0.7Ge_0.3/Si SL. These results demonstrate that strain and atomic differences controlled by ultrathin layers can bring a breakthrough for realizing high-performance light-element-based thermoelectric films.

Ultralow Lattice Thermal Conductivity in SnTe by Incorporating InSb

Herein, a series of (Sn_1.06Te)_1-x-(InSb)_x (x = 0, 0.025, 0.05, 0.075) samples are fabricated, and their thermoelectric performances are studied. The all-scale structure defects containing the atomic-scale In doping defects, the nanoscale Sb precipitates, and the mesoscale grain boundary scatter phonons collectively in a wide range of frequencies to give the ultralow lattice thermal conductivity. Concurrently, the incorporation of InSb decreases carrier concentration with marginal loss in carrier mobility, resulting in a little variation of electrical properties over a wide temperature range. The significantly decreased thermal conductivity and the preserved high power factor lead to a maximum ZT value of ∼0.84 at 823 K in the (Sn_1.06Te)_0.95(InSb)_0.05 sample. This strategy of rapidly constructing all-scale structure defects could be applied to other thermoelectric systems to enhance thermoelectric performance.

Band Engineering and Majority Carrier Switching in Isostructural Donor-Acceptor Complexes DPTTA-F X TCNQ Crystals (X = 1, 2, 4)

Three isostructural donor-acceptor complexes DPTTA-F X TCNQ (X = 1, 2, 4) are investigated experimentally and theoretically. By tuning the number of F atoms in the acceptor molecules, the resulting complexes display a continuous down shift of the valence band maximum, conducting band minimum, and optical bandgap. The majority carriers convert from hole (DPTTA-F1TCNQ), balanced hole, and electron (DPTTA-F2TCNQ) to electron (DPTTA-F4TCNQ). This result shows that band engineering can be realized easily in the donor-acceptor complex systems by tuning the electron affinity of the acceptor. The bandgaps of these three complexes vary from 0.31 to 0.41 eV; this narrow bandgap feature is crucial for achieving high thermoelectric performance and the unintentional doping in DPTTA-F4TCNQ leads to the effective suppression of the bipolar cancelling effect on the Seebeck coefficient and the highest power factor.

Synergetic Tuning of the Electrical and Thermal Transport Properties via Pb/Ag Dual Doping in BiCuSeO

The influence of Pb/Ag dual doping on the thermoelectric performance of BiCuSeO was investigated. It reveals that the electrical conductivity can be obviously improved owing to the increased carrier concentration mostly caused by the divalent Pb²⁺ doping at trivalent Bi³⁺. The electrical conductivity improves from 7.29 S/cm for BiCuSeO to 397.40 S/cm for Pb_0.06Bi_0.94Cu_0.94Ag_0.06SeO and Pb_0.06Bi_0.94CuSeO at 327 K. Combined with the moderate Seebeck coefficient (>120 μV/K) due to the large effective mass, a large power factor with 834 μW/mK² is achieved. Meanwhile, the lattice thermal conductivity is visibly decreased, mainly benefiting from the substitution of Ag⁺ at the Cu⁺ site since the phonon scattering can be enhanced by mass fluctuation and strain fluctuation between the two elements. Thus, the total thermal conductivity is suppressed effectively compared with the Ag-free sample Pb_0.06Bi_0.94CuSeO. Finally, a maximum ZT value with nearly 1.0 has been obtained for Pb_0.06Bi_0.94Cu_0.94Ag_0.06SeO at 873 K, which is ∼64% and ∼47% larger than those of the pristine sample BiCuSeO and Ag-free sample Pb_0.06Bi_0.94CuSeO. Additionally, the ZT is also larger than the maximum value for the reported Pb-free samples BiCu_0.94Ag_0.06SeO and Bi_0.92Ag_0.08CuSeO, suggesting Pb and Ag are effective codopants of BiCuSeO to synergetically tune its electrical and thermal transport properties.

High Thermoelectric Performance of Bi0.46Sb1.54Te3-SnTe: Synergistic Modulation of Electrical and Thermal Transport by the Introduction of Thermoelectric Hetero Nano Region

The thermoelectric hetero nano region, as a new strategy, can effectively modulate the electrical and thermal transport properties. In this study, the thermoelectric hetero nano region is explored to improve the thermoelectric performance for Bi_0.46Sb_1.54Te₃ material at room temperature, and a high ZT of 1.45 at 325 K has been achieved. We introduce the thermoelectric hetero nano SnTe regions in a Bi_0.46Sb_1.54Te₃ matrix by mechanical alloying and spark plasma sintering technique, which decouples the relation between electrical and thermal transport properties. The improved electrical conductivity can be attributed to the increase in carrier concentration due to the increased point defects and Bi/Sb_Te antisite defects. Thermoelectric hetero nano regions effectively scatter the acoustic phonon and thus induce the low lattice thermal conductivity of 0.33 W m^-1 K^-1. Due to the synergistic modulation of electrical and thermal transport by the introduction of the thermoelectric hetero nano region, a high ZT value of 1.45 is realized at 325 K.

Thermoelectric Property in Orthorhombic-Domained SnSe Film

Single-crystal SnSe exhibits extremely high thermoelectric properties, and fabrication of SnSe films is promising for practical application and basic research on properties. However, the high thermoelectric properties have not yet been reported in SnSe films and their thermoelectric properties and nanostructure have not yet been analyzed in detail. In the present study, a-axis-oriented epitaxial SnSe films were prepared to discuss the thermoelectric properties of the SnSe films. While the electrical conductivity of the films was orders of magnitude smaller than that in the single crystals at room temperature, surprisingly, the thermoelectric property (power factor) of the films was slightly higher than that in the single crystals at high temperatures (∼300 °C). The SnSe films contained orthorhombic domain boundaries with a spacing of several hundred nanometers. The orthorhombic domain boundaries caused carrier scattering and degraded the mobility of the films at room temperature, but their effect decreased with increasing temperature. Thus, the carrier scattering at domain boundaries results in characteristic temperature dependence of thermoelectric properties in the SnSe films. High thermoelectric properties at high temperatures were successfully achieved in the SnSe films in spite of the existence of domain boundaries, demonstrating the possibility of high-performance of SnSe thermoelectric films.

Noncovalent Modification of Single-Walled Carbon Nanotubes Using Thermally Cleavable Polythiophenes for Solution-Processed Thermoelectric Films

Four thermally cleavable polythiophene derivatives containing carbonate and solubilizing groups were synthesized for noncovalent modification of single-walled carbon nanotubes (SWCNTs). A well-dispersed polythiophene/SWCNTs composite was obtained by adsorption of the polymer at the SWCNT surface. The solution-processed composite film exhibited solid-state thermal cleavage of the insulating solubilizing group through decarboxylation, producing an insoluble composite film. The thermally cleavable composite film was evaluated for potential application as a thermoelectric (TE) material. The electrical conductivity (σ) of the thermally treated composite film was up to 250 times higher than that of the as-prepared composite film. The increased σ contributed to an increase in the power factor (PF). The ethanol-processed composite film could be applicable for green processing of a TE material using the less-toxic solvent. The substrate-free polythiophene/SWCNTs composite film prepared by simple solvent evaporation yielded a figure-of-merit of 3.1 × 10^-2 with a PF of 28.8 μW m^-1 K^-2 at 25 °C. This solution-processed methodology is beneficial for the development of a flexible TE material.

High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study

In 2016, bulk tellurium was experimentally observed as a remarkable thermoelectric material. Recently, two-dimensional (2D) tellurium, called tellurene, has been synthesized and has exhibited unexpected electronic properties compared with the 2D MoS₂. They have also been fabricated into air-stable and highly efficient field-effect transistors. There are two stable 2D tellurene phases. One (β-Te) has been confirmed with an ultralow lattice thermal conductivity (κ_L). However, the study of the transport properties of the other more stable phase, α-Te, is still lacking. Here, we report the thermoelectric performance and phonon properties of α-Te using Boltzmann transport theory and first-principles calculations. A maximum ZT value of 0.83 is achieved under a reasonable hole concentration, suggesting that the monolayer α-Te is a potential competitor in the thermoelectric field.

Methodology of Thermoelectric Power Factor Enhancement by Controlling Nanowire Interface

The simultaneous realization of low thermal conductivity and high thermoelectric power factor in materials has long been the goal for the social use of high-performance thermoelectric modules. Nanostructuring approaches have drawn considerable attention because of the success in reducing thermal conductivity. On the contrary, enhancement of the thermoelectric power factor, namely, the simultaneous increase of the Seebeck coefficient and electrical conductivity, has been difficult. We propose a method for the power factor enhancement by introducing coherent homoepitaxial interfaces with controlled dopant concentration, which enables the quasiballistic transmission of high-energy carriers. The wavenumber of the high-energy carriers is nearly conserved through the interfaces, resulting in simultaneous realization of a high Seebeck coefficient and relatively high electrical mobility. Here, we experimentally demonstrate the dopant-controlled epitaxial interface effect for the thermoelectric power factor enhancement using our "embedded-ZnO nanowire structure" having high-quality nanowire interfaces. This presents the methodology for substantial power factor enhancement by interface carrier scattering.

Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions

Interface engineering has been demonstrated to be an effective strategy for enhancing the thermoelectric (TE) performance of materials. However, a very typical interface in semiconductors, that is, the PN junction (PNJ), is scarcely adopted by the thermoelectrical community because of the coexistence of holes and electrons. Interestingly, our explorative results provide a definitively positive case that appropriate PNJs are able to enhance the TE performance of p-type Sb₂Te₃-based alloys. Specifically, owing to the formation of the charge-depletion layer and built-in electric field, the carrier concentration and transport can be optimized and thus the power factor is improved and the electronic thermal conductivity is decreased. Meanwhile, PNJs provide scattering centers for phonons, leading to a reduced lattice thermal conductivity. Consequently, the p-type (Bi₂Te₃)_0.15-(Sb₂Te₃)_0.85 composites comprising PNJs achieve a ∼131% improvement of the ZT value compared with the pure Sb₂Te₃. The increased ZT demonstrates the feasibility of improving the TE properties by introducing PNJs, which will open a new and effective avenue for designing TE alloys with high performance.

Effect of C and N Addition on Thermoelectric Properties of TiNiSn Half-Heusler Compounds

We investigated the thermoelectric properties of the ternary half-Heusler compound, TiNiSn, when introducing C and N. The addition of C or N to TiNiSn leads to an enhanced power factor and a decreasing lattice thermal conductivity by point defect phonon scattering. The thermoelectric performances of TiNiSn alloys are significantly improved by adding 1 at. % TiN, TiC, and figure of merit (ZT) values of 0.43 and 0.34, respectively, can be obtained at 723 K. This increase in thermoelectric performance is very helpful in the commercialization of thermoelectric power generation in the mid-temperature range.

Ag-Segregation to Dislocations in PbTe-Based Thermoelectric Materials

Dislocations have been considered to be an efficient source for scattering midfrequency phonons, contributing to the enhancement of thermoelectric performance. The structure of dislocations can be resolved by electron microscopy whereas their chemical composition and decoration state are scarcely known. Here, we correlate transmission Kikuchi diffraction and (scanning) transmission electron microscopy in conjunction with atom probe tomography to investigate the local structure and chemical composition of dislocations in a thermoelectric Ag-doped PbTe compound. Our investigations indicate that Ag atoms segregate to dislocations with a 10-fold excess of Ag compared with its average concentration in the matrix. Yet the Ag concentration along the dislocation line is not constant but fluctuates from ∼0.8 to ∼10 atom % with a period of about 5 nm. Thermal conductivity is evaluated applying laser flash analysis, and is correlated with theoretical calculations based on the Debye-Callaway model, demonstrating that these Ag-decorated dislocations yield stronger phonon scatterings. These findings reduce the knowledge gap regarding the composition of dislocations needed for theoretical calculations of phonon scattering and pave the way for extending the concept of defect engineering to thermoelectric materials.

Enhanced Thermoelectric Properties of Polycrystalline SnSe via LaCl₃ Doping

LaCl₃ doped polycrystalline SnSe was synthesized by combining mechanical alloying (MA) process with spark plasma sintering (SPS). It is found that the electrical conductivity is enhanced after doping due to the increased carrier concentration and carrier mobility, resulting in optimization of the power factor at 750 K combing with a large Seebeck coefficient over 300 Μvk-1. Meanwhile, all the samples exhibit lower thermal conductivity below 1.0 W/mK in the whole measured temperature. The lattice thermal conductivity for the doped samples was reduced, which effectively suppressed the increscent of the total thermal conductivity because of the improved electrical conductivity. As a result, a ZT value of 0.55 has been achieved for the composition of SnSe-1.0 wt % LaCl₃ at 750 K, which is nearly four times higher than the undoped one and reveals that rare earth element is an effective dopant for optimization of the thermoelectric properties of SnSe.

Nanostructured Composites of Bi1-xSbx Nanoparticles and Carbon Nanotubes and the Characterization of Their Thermoelectric Properties

The impact of inclusions of carbon nanotubes (CNT) on the thermoelectric properties of nanostructured Bi_1-xSb_x alloys with an Sb content between 10 and 20% was investigated for varying amounts of CNT. Three series of Bi_1-xSb_x pellets with 0, 0.3, and 0.5 wt % CNT were synthesized by mechanical alloying followed by uniaxial pressing. The resistivity was investigated in the temperature range from 30 to 500 K, revealing an enlargement of the band gap due to nanostructuring of the Bi_1-xSb_x alloy, which is even more pronounced for alloys including CNT. This enlargement is attributed to a modification of the interface between the Bi_1-xSb_x nanoparticles by a graphene-like coating, which is formed during the fabrication process due to the addition of CNT. Measurements of the Seebeck coefficient and the thermal conductivity were also performed to determine the thermoelectric properties. In total, the CNT-containing samples show a significant improvement of the figure of merit up to 250% for the Bi_0.88Sb_0.12 composition with 0.3 wt % CNT due to the interface modification between the nanoparticles, demonstrating the beneficial effect of CNT on the thermoelectric properties.

Crystalline-Amorphous Silicon Nanocomposites with Reduced Thermal Conductivity for Bulk Thermoelectrics

Responding to the need for thermoelectric materials with high efficiency in both conversion and cost, we developed a nanostructured bulk silicon thermoelectric materials by sintering silicon crystal quantum dots of several nanometers in diameters synthesized by plasma-enhanced chemical vapor deposition (PECVD). The material consists of hybrid structures of nanograins of crystalline silicon and amorphous silicon oxide. The percolated nanocrystalline region gives rise to high power factor with the high doping concentration realized by PECVD, and the binding amorphous region reduces thermal conductivity. Consequently, the nondimensional figure of merit reaches 0.39 at 600 °C, equivalent to the best reported value for silicon thermoelectrics. The thermal conductivity of the densely packed material is as low as 5 W m(-1) K(-1) in a wide temperature range from room temperature to 1000 °C, which is beneficial not only for the conversion efficiency but also for material cost by requiring less material to establish certain temperature gradient.

Enhanced thermoelectric properties of selenium-deficient layered TiSe(2-x): a charge-density-wave material

In the present work, we report on the investigation of low-temperature (300-5 K) thermoelectric properties of hot-pressed TiSe2, a charge-density-wave (CDW) material. We demonstrate that, with increasing hot-pressing temperature, the density of TiSe2 increases and becomes nonstoichiometric owing to the loss of selenium. X-ray diffraction, scanning electron microscopy, and transimission electron microscopy results show that the material consists of a layered microstructure with several defects. Increasing the hot-press temperature in nonstoichiometric TiSe2 leads to a reduction of the resistivity and enhancement of the Seebeck coefficient in concomitent with suppression of CDW. Samples hot-pressed at 850 °C exhibited a minimum thermal conductivity (κ) of 1.5 W/m·K at 300 K that, in turn, resulted in a figure-of-merit (ZT) value of 0.14. This value is higher by 6 orders of magnitude compared to 1.49 × 10(-7) obtained for cold-pressed samples annealed at 850 °C. The enhancement of ZT in hot-pressed samples is attributed to (i) a reduced thermal conductivity owing to enhanced phonon scattering and (ii) improved power factor (α(2)σ).

Metallic-covalent bonding conversion and thermoelectric properties of Al-based icosahedral quasicrystals and approximants

In this article, we review the characteristic features of icosahedral cluster solids, metallic-covalent bonding conversion (MCBC), and the thermoelectric properties of Al-based icosahedral quasicrystals and approximants. MCBC is clearly distinguishable from and closely related to the well-known metal-insulator transition. This unique bonding conversion has been experimentally verified in 1/1-AlReSi and 1/0-Al₁₂Re approximants by the maximum entropy method and Rietveld refinement for powder x-ray diffraction data, and is caused by a central atom inside the icosahedral clusters. This helps to understand pseudogap formation in the vicinity of the Fermi energy and establish a guiding principle for tuning the thermoelectric properties. From the electron density distribution analysis, rigid heavy clusters weakly bonded with glue atoms are observed in the 1/1-AlReSi approximant crystal, whose physical properties are close to icosahedral Al-Pd-TM (TM: Re, Mn) quasicrystals. They are considered to be an intermediate state among the three typical solids: metals, covalently bonded networks (semiconductor), and molecular solids. Using the above picture and detailed effective mass analysis, we propose a guiding principle of weakly bonded rigid heavy clusters to increase the thermoelectric figure of merit (ZT) by optimizing the bond strengths of intra- and inter-icosahedral clusters. Through element substitutions that mainly weaken the inter-cluster bonds, a dramatic increase of ZT from less than 0.01 to 0.26 was achieved. To further increase ZT, materials should form a real gap to obtain a higher Seebeck coefficient.

Synthesis and thermoelectric properties of Re3As6.6In0.4 with Ir3Ge7 crystal structure

The Re3As7- x In x solid solution was prepared for x ≤ 0.5 by heating the elements in stoichiometric ratios in evacuated silica tubes at 1073 K. It crystallizes with the Ir3Ge7 crystal structure, space group Im-3m, with a unit-cell parameter a ranging from 8.716 to 8.747 Å. The crystal structure and properties were investigated for a composition with x = 0.4. It is shown that indium substitutes arsenic exclusively at one crystallographic site, such that the As-As dumbbells with d As-As = 2.54 Å remain intact. Re3As6.6In0.4 behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. It possesses high values of Seebeck coefficient and low thermal conductivity, but relatively low electrical conductivity, which leads to rather low values of the thermoelectric figure of merit.