Magnetism Modulation for Cryogenic Thermoelectric Enhancements in Fe3O4 Nanoparticle-Incorporated Bi0.85Sb0.15 Nanocomposites

Enhanced Cryogenic Thermoelectric Performance of Textured Bi1-xSbx Ribbons with Electronic Phase Transition

Bi1-xSbx alloys are promising cryogenic thermoelectric materials for generator and refrigeration devices at temperatures below 200 K. Herein, we prepared highly (00l) textured Bi1-xSbx (x = 0-0.05) ribbons by a melt-spinning technique and tuned its band structure with a Dirac electronic phase transition via Sb doping for improving the thermoelectric performance. The results indicate that the lamellar grains with (00l) orientation facilitate the alignment of the Fermi pocket of ribbon samples and cause a higher Seebeck coefficient compared with the nonoriented Bi1-xSbx bulk. Meanwhile, the Fermi level of Bi1-xSbx ribbons moves down by Sb doping, inducing the decrease of the carrier concentration and the increment of the Seebeck coefficient. Particularly, the Dirac electron phase is modulated when x reaches 0.04, which enlarges the carrier mobility and results in a well-maintained conductivity. Therefore, the optimized transport properties yield a large power factor of 61.1 μW·cm-1·K-2 at 140 K for the x = 0.04 sample, a significant 65% increase compared to the x = 0 ribbon. Besides, a planar thermoelectric device composed of 8 legs was assembled with the optimized ribbon, which produces a high open-circuit voltage of 39.8 mV. The output power maximum and the corresponding power density reach up to 402 nW and 125.7 μW·cm-2 under a temperature gradient of 80 K, respectively. Our work suggests that modulating the Dirac phase transition can effectively enhance the thermoelectric performance of Bi1-xSbx alloys.

Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles

Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZTmax = 1.19 (at 373 K) and an average ZTave ∼ 1.12 (300-473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.

Hierarchical Low-Temperature n-Type Bi2Te3 with High Thermoelectric Performances

The high performance of a multistage thermoelectric cooler (multi-TEC) used in a wide low-temperature range depends on the optimized thermoelectric (TE) performance of materials during the corresponding working temperature range for each stage. Despite decades of research on the commercial TE materials of Bi2Te3, the main research is still focused on temperatures above 300 K, lacking suitable hierarchical low-temperature n-Bi2Te3 for multistage TEC. In this work, we systematically investigated the influence of doping concentration and matrix material compositions on the TE performance of n-Bi2Te3 below room temperature by the high-energy ball milling and hot deformation. Consequently, two hierarchical n-Bi2Te3 materials with excellent mechanical properties working below 248 and around 298 K, respectively, have been screened out. The Bi2Te2.7Se0.3 + 0.03 wt % TeI4 can be adopted in a low-temperature range that exhibits the high average figure of merit (zTave) of 0.61 within 173-248 K. Meanwhile, the Bi2Te2.7Se0.3 + 0.05 wt % TeI4 sample displays a competitive zTave of 0.85 within 248-298 K, which can be applied above 248 K. The research of hierarchical TE materials provides valuable insights into the high-performance design of multistage TE cooling devices.