Low-temperature growth of bismuth thin films with (111) facet on highly oriented pyrolytic graphite

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — α-Bi and β-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The crystal structure dependencies on the layer thicknesses of these films were analyzed. β-Bi layers were epitaxial and homogenous in lateral regions that are greater than 200 nm despite the layer thickness. Further, an increase in in-plane 2θ values showed the biaxial compressive strain. For comparison, α-Bi layers are misoriented in six in-plane directions and have β-Bi inserts in thicker layers. That leads to smaller (about 60 nm) lateral crystallites which are compressively strained in all three directions. Raman measurement confirmed the XRD results. The blue-sift of Raman signals compared with bulk Bi crystals occurs due to the phonon confinement effect, which is larger in the thinnest α-Bi layers due to higher compression.

Thickness dependent band structure of-bismuthene grown on epitaxial graphene

Along with the great interest in two-dimensional elemental materials that has emerged in recent years, atomically thin layers of bismuth have attracted attention due to physical properties on account of a strong spin-orbit coupling. Thickness dependent electronic band structure must be explored over the whole Brillouin zone in order to further explore their topological electronic properties. The anisotropic band structures along zig-zag and armchair directions of α-bismuthene (α-Bi) were resolved using the two-dimensional mapping of angle-resolved photoemission spectra. An increase in the number of layers from 1- to 2-bilayers (BLs) shifts the top of a hole band onΓ¯-X¯1line to high wavenumber regions. Subsequently, an electron pocket onΓ¯-X¯1line and a hole pocket centred atΓ¯point appears in the 3 BL α-Bi. Gapless Dirac-cone features with a large anisotropy were clearly resolved onX¯2point in the 1-BL and 2-BL α-Bi, which can be attributed to the strong spin-orbit coupling and protection by the nonsymmorphic symmetry of the α-Bi lattice.

Surface Modification and Subsequent Fermi Density Enhancement of Bi(111)

Defects introduced to the surface of Bi(111) break the translational symmetry and modify the surface states locally. We present a theoretical and experimental study of the 2D defects on the surface of Bi(111) and the states that they induce. Bi crystals cleaved in ultrahigh vacuum (UHV) at low temperature (110 K) and the resulting ion-etched surface are investigated by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy (UPS), and scanning tunneling microscopy (STM) as well as spectroscopy (STS) techniques in combination with density functional theory (DFT) calculations. STS measurements of cleaved Bi(111) reveal that a commonly observed bilayer step edge has a lower density of states (DOS) around the Fermi level as compared to the atomic-flat terrace. Following ion bombardment, the Bi(111) surface reveals anomalous behavior at both 110 and 300 K: Surface periodicity is observed by LEED, and a significant increase in the number of bilayer step edges and energetically unfavorable monolayer steps is observed by STM. It is suggested that the newly exposed monolayer steps and the type A bilayer step edges result in an increase to the surface Fermi density as evidenced by UPS measurements and the Kohn-Sham DOS. These states appear to be thermodynamically stable under UHV conditions.

Computational scanning tunneling microscope image database

We introduce the systematic database of scanning tunneling microscope (STM) images obtained using density functional theory (DFT) for two-dimensional (2D) materials, calculated using the Tersoff-Hamann method. It currently contains data for 716 exfoliable 2D materials. Examples of the five possible Bravais lattice types for 2D materials and their Fourier-transforms are discussed. All the computational STM images generated in this work are made available on the JARVIS-STM website ( https://jarvis.nist.gov/jarvisstm ). We find excellent qualitative agreement between the computational and experimental STM images for selected materials. As a first example application of this database, we train a convolution neural network model to identify the Bravais lattice from the STM images. We believe the model can aid high-throughput experimental data analysis. These computational STM images can directly aid the identification of phases, analyzing defects and lattice-distortions in experimental STM images, as well as be incorporated in the autonomous experiment workflows.

Advances of 2D bismuth in energy sciences

Since graphene has been successfully exfoliated, two-dimensional (2D) materials constitute a vibrant research field and open vast perspectives in high-performance applications. Among them, bismuthene and 2D bismuth (Bi) are unique with superior properties to fabricate state-of-the-art energy saving, storage and conversion devices. The largest experimentally determined bulk gap, even larger than those of stanene and antimonene, allows 2D Bi to be the most promising candidate to construct room-temperature topological insulators. Moreover, 2D Bi exhibits cyclability for high-performance sodium-ion batteries, and the enlarged surface together with the good electrochemical activity renders it an efficient electrocatalyst for energy conversion. Also, the air-stability of 2D Bi is better than that of silicene, germanene, phosphorene and arsenene, which could enable more practical applications. This review aims to thoroughly explore the fundamentals of 2D Bi and its improved fabrication methods, in order to further bridge gaps between theoretical predictions and experimental achievements in its energy-related applications. We begin with an introduction of the status of 2D Bi in the 2D-material family, which is followed by descriptions of its intrinsic properties along with various fabrication methods. The vast implications of 2D Bi for high-performance devices can be envisioned to add a new pillar in energy sciences. In addition, in the context of recent pioneering studies on moiré superlattices of other 2D materials, we hope that the improved manipulation techniques of bismuthene, along with its unique properties, might even enable 2D Bi to play an important role in future energy-related twistronics.

Exploring the Adsorption Mechanism of Tetracene on Ag(110) by STM and Dispersion-Corrected DFT

Self-assembled strategy has been proven to be a promising vista in constructing organized low-dimensional nanostructures with molecular precision and versatile functionalities on solid surfaces. Herein, we investigate by a combination of scanning tunneling microscopy (STM) and dispersion-corrected density functional theory (DFT), the adsorption of tetracene molecules on the silver substrate and the mechanism mediating the self-assembly on Ag(110). As expected, ordered domain is formed on Ag(110) after adsorption with adjacent molecules being imaged with alternating bright or dim pattern regularly. While such behavior has been assigned previously to the difference of molecular adsorption height, herein, it is possible to investigate essentially the mechanism leading to the periodic alternation of brightness and dimness for tetracene adsorbed on Ag(110) thanks to the consideration of Van der Waals (vdW) dispersion force. It is demonstrated that the adsorption height in fact is same for both bright and dim molecules, while the adsorption site and the corresponding interfacial charge transfer play an important role in the formation of such pattern. Our report reveals that vdW dispersion interaction is crucial to appropriately describe the adsorption of tetracene on the silver substrate, and the formation of delicate molecular architectures on metal surfaces might also offers a promising approach towards molecular electronics.

Revealing the Adsorption and Decomposition of EP-PTCDI on a Cerium Oxide Surface

Cerium oxide has constantly attracted intense attention during the past decade both in research and industry as an appealing catalyst or a noninert support for catalysts, for instance, in the water-gas shift reaction and hydrogenation of the ketone group. Herein, the cerium oxide surface has been chosen to investigate the adsorption and decomposition behaviors of the N,N'-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxdiimide (EP-PTCDI) molecule by photoelectron spectroscopy. As expected, EP-PTCDI molecules self-assemble on the cerium oxide surface comprising both trivalent and tetravalent cerium at room temperature. Interestingly, the EP-PTCDI molecule exhibits selective adsorption on cerium oxide after the heating treatment. It was found that the ketone group of EP-PTCDI first undergoes hydrogenation after annealing to 400 °C, which is probably related to the fact that high temperature annealing provides sufficient thermal energy to trigger the reaction between the ketone group and trivalent cerium. Furthermore, EP-PTCDI molecules are discovered to start to decompose hierarchically on the ceria substrate from annealing at 400 °C due to the strong molecule-substrate interaction and the effective catalysis by the trivalent cerium, whereas the decomposition sequence of functional groups is revealed to be, first, the ethyl propyl group (-C₅H₉), followed by the hydrogenated ketone (alcohols) group. Finally, our study may provide a new platform for the fundamental understanding of complex organic reactions on the cerium oxide surface.

Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments

The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.

Nanostructured Bi Grown on Epitaxial Graphene/SiC

Controllable growth of metal nanostructures on epitaxial graphene (EG) is particularly interesting and important for the applications in electric devices. Bi nanostructures on EG/SiC are fabricated through thermal decomposition of SiC and subsequent low-flux evaporation of Bi. The orientation, atomic structure, and thickness-dependent electronic states of Bi are investigated by scanning tunneling microscopy/spectroscopy. It is found that metallic Bi nanoflakes and nanorods prefer to grow on the SiC buffer layer region with higher diffusion barrier, but Bi nanoribbons are formed on regularly ordered EG. Although the thicker Bi nanoribbons of 11 monolayers on EG are still metallic, the thinner ones become semiconducting owing to the interfacial effect. This indicates that the electronic states and physical properties of Bi are substrate-dependent. The results are helpful for the design of Bi- and graphene-based electronic and spintronic devices.

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al₂O₃(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film-vacuum as well as the film-substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.

Unveiling orbital coupling at the CoPc/Bi(111) surface by ab initio calculations and photoemission spectroscopy

Orbital coupling is revealed at the CoPc/Bi(111) interface with the local magnetic moment retained in CoPc.