Grain Size and Interface Dependence of Bias Stress Stability of n-Type Organic Field Effect Transistors

High mobility and ON/OFF ratio of solution-processable p-channel OFETs from arylacetylene end-capped alkoxyphenanthrenes

New arylacetylene end-capped alkoxyphenanthrenes were synthesized and demonstrated as the best active layer for solution-processable p -channel organic field-effect transistors. The alkoxy chain embedded compounds exhibited enhanced solubility and induced non-covalent interactions resulting in effective molecular packing. The 'Lewis soft' heteroatoms direct the most stable conformation with dihedral angles possible for molecular interactions, and energy levels. DFT studies supported the finetuning of FMOs, with high HOMO levels ~-5.2 eV ensuring a low barrier for charge injection. OFET devices exhibited a maximum charge carrier mobility up to 1.30 cm 2 /Vs with the highest ON/OFF ratio of 10 7 . The strong π-π interactions and the crystallinity of the films are well supported by GIXRD and SEM analysis.

Directly Patterning Conductive Polymer Electrodes on Organic Semiconductor via In Situ Polymerization in Microchannels for High-Performance Organic Transistors

Conductive polymers are considered promising electrode materials for organic transistors, but the reported devices with conductive polymer electrodes generally suffer from considerable contact resistance. Currently, it is still highly challenging to pattern conductive polymer electrodes on organic semiconductor surfaces with good structure and interface quality. Herein, we develop an in situ polymerization strategy to directly pattern the top-contacted polypyrrole (PPy) electrodes on hydrophobic surfaces of organic semiconductors by microchannel templates, which is also applicable on diverse hydrophobic and hydrophilic surfaces. Remarkably, a width-normalized contact resistance as low as 1.01 kΩ·cm is achieved in the PPy-contacted transistors. Both p-type and n-type organic field-effect transistors (OFETs) exhibit ideal electrical characteristics, including almost hysteresis-free, low threshold voltage, and good stability under long-term test. The facile patterning method and high device performance indicate that the in situ polymerization strategy in confined microchannels has application prospects in all-organic, transparent, and flexible electronics.

Charge Trapping in a Low-Crystalline High-Mobility Conjugated Polymer and Its Effects on the Operational Stability of Organic Field-Effect Transistors

The effects of the microstructure of conjugated polymer thin films on charge trapping and operational stability of organic field-effect transistors (OFETs) are investigated. Device characteristics of OFETs based on two model conjugated polymers, poly(3-hexylthiophene) (P3HT) and a random 3-hexylthiophene-thiophene copolymer (RP33), are compared. P3HT films have high crystallinity and long-range molecular order, whereas RP33 films have low crystallinity and short-range molecular order as well as enhanced polymer backbone planarity. Experimental evidence shows that although the microstructure of the RP33 film provides efficient charge transport pathways, its high degree of structural disorder causes severe shallow trapping of charge carriers, which results in its inferior stability under bias stress. This study demonstrates that low-crystalline conjugated polymers with short-range order can provide a high charge-carrier mobility but at the same time be inappropriate for practical OFETs because of their poor intrinsic operational stability.

Parylene C as a versatile dielectric material for organic field-effect transistors

An emerging new technology, organic electronics, is approaching the stage of large-scale industrial application. This is due to a remarkable progress in synthesis of a variety of organic semiconductors, allowing one to design and to fabricate, so far on a laboratory scale, different organic electronic devices of satisfactory performance. However, a complete technology requires upgrading of fabrication procedures of all elements of electronic devices and circuits, which not only comprise active layers, but also electrodes, dielectrics, insulators, substrates and protecting/encapsulating coatings. In this review, poly(chloro-para-xylylene) known as Parylene C, which appears to become a versatile supporting material especially suitable for applications in flexible organic electronics, is presented. A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors.

Insights into the Silver Reflection Layer of a Vertical LED for Light Emission Optimization

In this work, Ag as a highly reflective mirror layer of gallium nitride (GaN)-based blue vertical light-emitting diodes (VLEDs) has been systematically investigated by correlating scanning electron microscopy/energy dispersive X-ray spectroscopy/transmission Kikuchi diffraction/electron backscatter diffraction, aberration-corrected scanning transmission electron microscopy, and atomic force microscopy techniques. In the context of high-efficiency lighting, three critical aspects have been scrutinized on the nanoscale: (1) chemical diffusion, (2) grain morphology, and (3) surface topography of the Ag layer. We found that nanoscale inhomogeneous distribution of In in InGaN/GaN quantum wells (QWs), interfacial diffusion (In/Ga out-diffusion into the Ag layer and diffusion of Ag into p-GaN and QWs), and Ag agglomeration deteriorate the light reflectivity, which account for the decreased luminous efficiency in VLEDs. Meanwhile, the surface morphology and topographical analyses revealed the nanomorphology of the Ag layer, where a nanograin size of ∼300 nm with special nanotwinned boundaries and an extremely smooth surface of ∼3-4 nm are strongly desired for better reflectivity. Further, on the basis of these microscopy results, suggestions on light extraction optimization are given to improve the performance of GaN-based blue VLEDs. Our findings enable fresh and deep understanding of performance-microstructure correlation of LEDs on the nanoscale, providing guidance to the design and manufacture of high-performance LED devices.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.