Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure

The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that a rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on a gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on a GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the Γ point of the Brillouin zone. The epitaxial growth of WSe2/GaP(111)B helps to understand the fundamental properties of these 2D/3D heterostructures, toward their implementation in future devices.

Large-Area Epitaxial Mott Insulating 1T-TaSe2 Monolayer on GaP(111)B

Two-dimensional Mott materials have recently been reported in the dichalcogenide family with high potential for Mottronic applications. Nevertheless, their widespread use as a single or few layers is hampered by their limited device integration resulting from their growth on graphene, a metallic substrate. Here, we report on the fabrication of 1T-TaSe2 monolayers grown by molecular beam epitaxy on semiconducting gallium phosphide substrates. At the nanoscale, the charge density wave reconstruction and a moiré pattern resulting from the monolayer interaction with the substrate are observed by scanning tunneling microscopy. The fully open gap unveiled by tunneling spectroscopy, which can be further manipulated by the proximity of a metal tip, is confirmed by transport measurements from micrometric to millimetric scales, demonstrating a robust Mott insulating phase at up to 400 K.

Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.

Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors

Heterostacks consisting of low-dimensional materials are attractive candidates for future electronic nanodevices in the post-silicon era. In this paper, using first-principles calculations based on density functional theory (DFT), we explore the structural and electronic properties of MoTe₂/ZrS₂ heterostructures with various stacking patterns and thicknesses. Our simulations show that the valence band (VB) edge of MoTe₂ is almost aligned with the conduction band (CB) edge of ZrS₂, and (MoTe₂)_m/(ZrS₂)_m (m = 1, 2) heterostructures exhibit the long-sought broken gap band alignment, which is pivotal for realizing tunneling transistors. Electrons are found to spontaneously flow from MoTe₂ to ZrS₂, and the system resembles an ultrascaled parallel plate capacitor with an intrinsic electric field pointed from MoTe₂ to ZrS₂. The effects of strain and external electric fields on the electronic properties are also investigated. For vertical compressive strains, the charge transfer increases due to the decreased coupling between the layers, whereas tensile strains lead to the opposite behavior. For negative electric fields a transition from the type-III to the type-II band alignment is induced. In contrast, by increasing the positive electric fields, a larger overlap between the valence and conduction bands is observed, leading to a larger band-to-band tunneling (BTBT) current. Low-strained heterostructures with various rotation angles between the constituent layers are also considered. We find only small variations in the energies of the VB and CB edges with respect to the Fermi level, for different rotation angles up to 30°. Overall, our simulations offer insights into the fundamental properties of low-dimensional heterostructures and pave the way for their future application in energy-efficient electronic nanodevices.

First-Principles Estimation of Core Level Shifts for Hf, Ta, W, and Re

A simple first-principles approach is used to estimate the core level shifts observed in X-ray photoelectron spectroscopy for the 4f electrons of Hf, Ta, W, and Re; these elements were selected because their 4f levels are relatively close to the Fermi energy. The approach is first tested by modeling the surface core level shifts of low-index surfaces of the four elemental metals, followed by its application to the well-studied material TaSe₂ in the commensurate charge density wave (CDW) phase, where agreement with experimental data is found to be good, showing that this approach can yield insights into modifications of the CDW. Finally, unterminated surface core level shifts in the hypothetical MXene Ta₃C₂ are modeled, and the potential of XPS for the investigation of the surface termination of MXenes is demonstrated.

Atomically Thin TaSe2 Film as a High-Performance Substrate for Surface-Enhanced Raman Scattering

An atomically thin TaSe₂ sample, approximately containing two to three layers of TaSe₂ nanosheets with a diameter of 2.5 cm is prepared here for the first time and applied on the detection of various Raman-active molecules. It achieves a limit of detection of 10^-10  m for rhodamine 6G molecules. The excellent surface-enhanced Raman scattering (SERS) performance and underlying mechanism of TaSe₂ are revealed using spectrum analysis and density functional theory. The large adsorption energy and the abundance of filled electrons close to the Fermi level are found to play important roles in the chemical enhancement mechanism. Moreover, the TaSe₂ film enables highly sensitive detection of bilirubin in serum and urine samples, highlighting the potential of using 2D SERS substrates for applications in clinical diagnosis, for example, in the diagnosis of jaundice caused by excess bilirubin in newborn children.

A study on structural, optical, and electrical characteristics of perovskite CsPbBr3 QD/2D-TiSe2 nanosheet based nanocomposites for optoelectronic applications

Lead halide perovskite (CsPbBr₃) quantum dots (QDs) and two-dimensional (2D) layered transition metal dichalcogenides have a significant application in solution-processed optoelectronic devices. Here, we report the oleylamine-assisted exfoliation of TiSe₂ nanosheets (NSs) in dichlorobenzene with high concentration and stable dispersion. The functionalized TiSe₂ NSs were used to synthesize the solution-processed perovskite CsPbBr₃ QD/TiSe₂ NS-based nanocomposite. The perovskite QDs and TiSe₂ NSs were characterized by different techniques. The strong photoluminescence (PL) quenching and decreased lifetime decay of the nanocomposite indicates efficient charge transfer from photo-excited CsPbBr₃ to TiSe₂ NSs. The calculated charge-transfer rate constant (K_ET) from photo-excited CsPbBr₃ to TiSe₂ NSs increased from 1.50 × 10⁸ to 2.79 × 10⁸ s^-1 in different concentrations of TiSe₂ NSs (5 to 20 μg mL^-1), respectively. Furthermore, the photo-currents of CsPbBr₃ QD/TiSe₂ NS nanocomposite devices were dramatically enhanced ∼2 times compared to pristine CsPbBr₃ QD based devices, which supports the charge transfer and charge separation in nanocomposite devices.

Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction

The physical proximity of layered materials in their van der Waals heterostructures (vdWhs) aids interfacial phenomena such as charge transfer (CT) and energy transfer (ET). Besides providing fundamental insights, CT and ET also offer routes to engineer optoelectronic properties of vdWhs. For example, harnessing ET in vdWhs can help to overcome the limitations of optical absorption imposed by the ultra-thin nature of layered materials and thus provide an opportunity for in situ enhancement of quantum efficiency for light-harvesting and sensing applications. While several spectroscopic studies on vdWhs probed the dynamics of CT and ET, the possible contribution of ET in the photocurrent generation remains largely unexplored. In this work, we investigate the role of nonradiative energy transfer (NRET) in the photocurrent through a vertical vdWh of SnSe₂/MoS₂/TaSe₂. We observe an unusual negative differential photoconductance (NDPC) arising from the existence of NRET across the SnSe₂/MoS₂ junction. Modulation of the NRET-driven NDPC characteristics with optical power results in a striking transition of the photocurrent's power law from a sublinear to a superlinear regime. Our observations reveal the nontrivial influence of ET on the photoresponse of vdWhs, which offer insights to harness ET in synergy with CT for vdWh based next-generation optoelectronics.

Interface chemistry of two-dimensional heterostructures - fundamentals to applications

Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.

Metallic 2H-Tantalum Selenide Nanomaterials as Saturable Absorber for Dual-Wavelength Q-Switched Fiber Laser

A novel 2H-phase transition metal dichalcogenide (TMD)-tantalum selenide (TaSe2) with metallic bandgap structure is a potential photoelectric material. A band structure simulation of TaSe2 via ab initio method indicated its metallic property. An effective multilayered TaSe2 saturable absorber (SA) was fabricated using liquid-phase exfoliation and optically driven deposition. The prepared 2H-TaSe2 SA was successfully used for a dual-wavelength Q-switched fiber laser with the minimum pulse width of 2.95 μs and the maximum peak power of 64 W. The repetition rate of the maximum pulse energy of 89.9 kHz was at the level of 188.9 nJ. The metallic 2H-TaSe2 with satisfactory saturable absorbing capability is a promising candidate for pulsed laser applications.

Measuring the Electron–Phonon Interaction in Two-Dimensional Superconductors with He-Atom Scattering

Helium-atom scattering (HAS) spectroscopy from conducting surfaces has been shown to provide direct information on the electron–phonon interaction, more specifically the mass-enhancement factor λ from the temperature dependence of the Debye–Waller exponent, and the mode-selected electron–phonon coupling constants λQν from the inelastic HAS intensities from individual surface phonons. The recent applications of the method to superconducting ultra-thin films, quasi-1D high-index surfaces, and layered transition-metal and topological pnictogen chalcogenides are briefly reviewed.

Structural Characterization of a Novel Two-Dimensional Material: Cobalt Sulfide Sheets on Au(111)

Transition metal dichalcogenides (TMDCs) are a type of two-dimensional (2D) material that has been widely investigated by both experimentalists and theoreticians because of their unique properties. In the case of cobalt sulfide, density functional theory (DFT) calculations on free-standing S-Co-S sheets suggest there are no stable 2D cobalt sulfide polymorphs, whereas experimental observations clearly show TMDC-like structures on Au(111). In this study, we resolve this disagreement by using a combination of experimental techniques and DFT calculations, considering the substrate explicitly. We find a 2D CoS(0001)-like sheet on Au(111) that delivers excellent agreement between theory and experiment. Uniquely this sheet exhibits a metallic character, contrary to most TMDCs, and exists due to the stabilizing interactions with the Au(111) substrate.

Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe2

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe₂, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe₂, in contrast to the 2H materials, the out-of-plane transition metal d_z² and chalcogen p_z orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe₂ using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe₂. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides

Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered. The synthesis of stacked vdW layers, however, remains to date, hardly understood. Therefore, in this work, the vdW epitaxy of transition metal dichalcogenides (TMDs) on single-crystalline TMD templates is investigated in depth. It is demonstrated that the role of lattice mismatch is insignificant. More importantly is the role of surface energy, calculated using density functional theory, which plays an essential role in the activation energy for adatom diffusion, hence nucleation density. This in turn correlates with defect density since the stacking sequence in vdW epitaxy is generally poorly controlled. Moreover, the vapor pressure of the transition metal is also found to correlate with adatom diffusion. Consequently, the proposed study enables important and new insight in the vdW epitaxy of multilayer 2D homo-/heterostructures.

The Electron-Phonon Interaction of Low-Dimensional and Multi-Dimensional Materials from He Atom Scattering

Atom scattering is becoming recognized as a sensitive probe of the electron-phonon interaction parameter λ at metal and metal-overlayer surfaces. Here, the theory is developed, linking λ to the thermal attenuation of atom scattering spectra (in particular, the Debye-Waller factor), to conducting materials of different dimensions, from quasi-1D systems such as W(110):H(1 × 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dimensional surfaces such as quasicrystalline 2ML-Ba(0001)/Cu(001) and d-AlNiCo(00001). Values of λ obtained using He atoms compare favorably with known values for the bulk materials. The corresponding analysis indicates in addition, the number of layers contributing to the electron-phonon interaction, which is measured in an atom surface collision.

Enhanced Photocurrent Owing to Shuttling of Charge Carriers across 4-Aminothiophenol-Functionalized MoSe2-CsPbBr3 Nanohybrids

Mixed-dimensional van der Waals nanohybrids (MvNHs) of two-dimensional transition-metal dichalcogenides (TMDs) and zero-dimensional perovskites are highly promising candidates for high-performance photonic device applications. However, the growth of perovskites over the surface of TMDs has been a challenging task due to the distinguishable surface chemistry of these two different classes of materials. Here, we demonstrate a synthetic route for the design of MoSe₂-CsPbBr₃ MvNHs using a bifunctional ligand, i.e., 4-aminothiophenol. Close contact between these two materials is established via a bridge that leads to the formation of a donor-bridge-acceptor system. The presence of the small conjugated ligand facilitates faster charge diffusion across MoSe₂-CsPbBr₃ interfaces. Density functional theory calculations confirm the type-II band alignment of the constituents within the MvNHs. The MoSe₂-CsPbBr₃ nanohybrids show much higher photocurrent (∼2 × 10⁴-fold photo-to-dark current ratio) as compared to both pure CsPbBr₃ nanocrystals and pristine MoSe₂ nanosheets owing to the synergistic effect of pronounced light-matter interactions followed by efficient charge separation and transportation. This study suggests the use of a bifunctional ligand to construct a nanohybrid system to tune the optoelectronic properties for potential applications in photovoltaic devices.

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. To date, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. Here, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS₂ shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS₂, whose orientation – rotated 30° against the underlying SnS₂ crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.

Vertically stacked twisted layers of two-dimensional materials can trigger exciting fundamental physics. Here, authors report controlled growth of 30° twisted few-layer SnS₂ over SnS₂ via van der Waals epitaxy of an SnS intermediate and its transformation in the presence of excess sulfur.

Direct Synthesis of Large-Scale Multilayer TaSe2 on SiO2/Si Using Ion Beam Technology

The multilayer 1T-TaSe₂ is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO₂/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe₂. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe₂ obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe₂ and HfSe₂ and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.

Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications

Recent research and development is focused in an intensive manner to increase the efficiency of solar energy conversion into electrical energy via photovoltaics and photo-electrochemical reactions.

Mirror twin grain boundaries in molybdenum dichalcogenides

Mirror twin grain boundaries (MTBs) exist at the interface between two grains of 60° rotated hexagonal transition metal dichalcogenides (TMDC). These grain boundaries form a regular atomic structure that extends in one dimension and thus may be described as a one-dimensional (1D) lattice embedded in the 2D TMDC. In this review, the different atomic structures and compositions of these MTBs are discussed. The obvious formation of MTBs is by coalescence of two twinned grains. In addition, however, in MoSe₂ and MoTe₂ a different formation mechanism has been revealed for the formation of Mo-rich MTBs. It has been shown that excess Mo can be incorporated into the TMDC lattices. These excess Mo atoms can then reorganize into closed, triangular MTB-loops that can grow in size by adding more Mo atoms to them. This mechanism allows the formation of dense MTB networks in MoSe₂ and MoTe₂. Such MTB networks have been observed in samples grown by molecular beam epitaxy (MBE) and consequently their presence needs to be considered in understanding the properties of MBE grown MoSe₂ and MoTe₂. Density functional theory as well as photoemission spectroscopy of MTB networks have shown that MTBs exhibit dispersing 1D-bands that intersect the Fermi-level, thus suggesting that these are 1D electron systems. Consequently, experimental data have been interpreted to reveal a charge density wave (or Peierls) instability, as well as a Tomonaga-Luttinger liquid behavior for electrons confined in 1D. We discuss these observations and the controversies that remain in the interpretation of some data. The metallic properties of the MTBs and their formation in dense networks also sparked the potential use of such crystal modifications for making metallic contacts to MoTe₂ or MoSe₂. Moreover, these crystal modifications may also boost the catalytic properties of these materials.

Chemical Vapor Deposition Grown Wafer-Scale 2D Tantalum Diselenide with Robust Charge-Density-Wave Order

2D metallic transition metal dichalcogenides (MTMDCs) are benchmark systems for uncovering the dimensionality effect on fascinating quantum physics, such as charge-density-wave (CDW) order, unconventional superconductivity, and magnetism, etc. However, the scalable and thickness-tunable syntheses of such envisioned MTMDCs are still challenging. Meanwhile, the origin of CDW order at the 2D limit is controversial. Herein, the direct synthesis of wafer-scale uniform monolayer 2H-TaSe₂ films and thickness-tunable flakes on Au foils by chemical vapor deposition is accomplished. Based on the thickness-tunable 2H-TaSe₂, the robust periodic lattice distortions that relate to CDW orders by low-temperature transmission electron microscopy are directly visualized. Particularly, a phase diagram of the transition temperature from normal metallic to CDW phases with thickness by variable-temperature Raman characterizations is established. Intriguingly, dramatically enhanced transition temperature from bulk value ≈90 to ≈125 K is observed from monolayer 2H-TaSe₂, which can be explained by the enhanced electron-phonon coupling mechanism. More importantly, an ultrahigh specific capacitance is also obtained for the as-grown TaSe₂ on carbon cloth as supercapacitor electrodes. The results hereby open up novel avenues toward the large-scale preparation of high-quality MTMDCs, and shed light on their applications in exploring some fundamental issues.

Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps

Alloying transition metal dichalcogenides (TMDs) with different compositions is demonstrated as an effective way to acquire 2D semiconductors with widely tunable bandgaps. Herein, for the first time, the large-area synthesis of layered HfS_{2(1- x )}Se_{2 x} alloys with fully tunable chemical compositions on sapphire by chemical vapor deposition is reported, greatly expanding and enriching the family of 2D TMDs semiconductors. The configuration and high quality of their crystal structure are confirmed by various characterization techniques, and the bandgap of these alloys can be continually modulated from 2.64 to 1.94 eV with composition variations. Furthermore, prototype HfS_{2(1- x )}Se_{2 x} photodetectors with different Se compositions are fabricated, and the HfSe₂ photodetector manifests the best performance among all the tested HfS_{2(1- x )}Se_{2 x} devices. Remarkably, by introducing a hexagonal boron nitride layer, the performance of the HfSe₂ photodetector is greatly improved, exhibiting a high on/off ratio exceeding 10⁵, an ultrafast response time of about 190 µs, and a high detectivity of 10¹² Jones. This simple and controllable approach opens up a new way to produce high-quality 2D HfS_{2(1- x )}Se_{2 x} layers, which are highly qualified candidates for the next-generation application in high-performance optoelectronics.

van der Waals Metallic Transition Metal Dichalcogenides

Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.

Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy

Single and few layers of the two-dimensional (2D) semimetal ZrTe₂ are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe₂ epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe₂ could be considered as the electronic analogue of graphene.

Interlayer resistance of misoriented MoS2

Interlayer misorientation in transition metal dichalcogenides alters their interlayer distance, total energy, electronic band structure, and vibrational modes, but its effect on the interlayer resistance is not known. This study analyzes the interlayer resistance of misoriented bilayer MoS₂ as a function of the misorientation angle, and it shows that interlayer misorientation exponentially increases the electron resistivity while leaving the hole resistivity almost unchanged. The physics, determined by the wave functions at the high symmetry points, are generic among the popular semiconducting transition metal dichalcogenides (TMDs). The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar transistor. Density functional theory provides the interlayer coupling elements used for the resistivity calculations.

Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.