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Wang D, Jiang Z, Li L, Zhu D, Wang C, Han S, Fang M, Liu X, Liu W, Cao P, Lu Y. High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1422. [PMID: 37111007 PMCID: PMC10145049 DOI: 10.3390/nano13081422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Revised: 04/12/2023] [Accepted: 04/18/2023] [Indexed: 06/19/2023]
Abstract
H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device's performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H (4 nm)/ZnO (20 nm) double active layers by magnetron sputtering at room temperature, and studied the effect of the hydrogen flow ratio on the devices' performance. ZnO:H/ZnO-TFT has the best overall performance when H2/(Ar + H2) = 0.13% with a mobility of 12.10 cm2/Vs, an on/off current ratio of 2.32 × 107, a subthreshold swing of 0.67 V/Dec, and a threshold voltage of 1.68 V, which is significantly better than the performance of single active layer ZnO:H-TFTs. This exhibits that the transport mechanism of carriers in double active layer devices is more complicated. On one hand, increasing the hydrogen flow ratio can more effectively suppress the oxygen-related defect states, thus reducing the carrier scattering and increasing the carrier concentration. On the other hand, the energy band analysis shows that electrons accumulate at the interface of the ZnO layer close to the ZnO:H layer, providing an additional path for carrier transport. Our research exhibits that the combination of a simple hydrogen doping process and double active layer construction can achieve the fabrication of high-performance ZnO-based TFTs, and that the whole room temperature process also provides important reference value for the subsequent development of flexible devices.
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Wu CH, Mohanty SK, Huang BW, Chang KM, Wang SJ, Ma KJ. High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situH 2plasma and neutral oxygen beam irradiation treatment. NANOTECHNOLOGY 2023; 34:175202. [PMID: 36696686 DOI: 10.1088/1361-6528/acb5f9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 01/25/2023] [Indexed: 06/17/2023]
Abstract
In this work, staggered bottom-gate structure amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with high-k ZrO2gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) within situhydrogenation to modulate the carrier concentration and improve interface quality. Subsequently, a neutral oxygen beam irradiation (NOBI) technique is applied, demonstrating that a suitable NOBI treatment could successfully enhance electrical characteristics by reducing native defect states and minimize the trap density in the back channel. A reverse retrograde channel (RRGC) with ultra-high/low carrier concentration is also formed to prevent undesired off-state leakage current and achieve a very low subthreshold swing. The resulting a-IGZO TFTs exhibit excellent electrical characteristics, including a low subthreshold swing of 72 mV dec-1and high field-effect mobility of 35 cm2V-1s-1, due to conduction path passivation and stronger carrier confinement in the RRGC. The UV-vis spectroscopy shows optical transmittance above 90% in the visible range of the electromagnetic spectrum. The study confirms the H2plasma with NOBI-treated a-IGZO/ZrO2TFT is a promising candidate for transparent electronic device applications.
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Affiliation(s)
- Chien-Hung Wu
- Department of Optoelectronics & Materials Engineering, Chung Hua University, Hsinchu, 30010, Taiwan, ROC
| | - Srikant Kumar Mohanty
- UST-IPPP, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
| | - Bo-Wen Huang
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
| | - Kow-Ming Chang
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
| | - Shui-Jinn Wang
- Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC
| | - Kung-Jeng Ma
- Department of Optoelectronics & Materials Engineering, Chung Hua University, Hsinchu, 30010, Taiwan, ROC
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3
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Sha S, Hou Q, Qi M, Zhao C. Effects of Coexistence of Mo and Zn Vacancies with Different Valence States and Interstitial H on the Magneto-optical Properties of ZnO: First-principles calculations. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2022.111589] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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D'Antona NR, Orban P, Walsh NH, Durastanti DG, Donahue EM, Canfield GM, Hendley CT, Kerr AT, Townsend TK. Room-Temperature Postannealing Reduction via Aqueous Sodium Borohydride and Composition Optimization of Fully Solution-Processed Indium Tin Oxide Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:13516-13527. [PMID: 35266703 DOI: 10.1021/acsami.2c01092] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Solution-processed transparent conductive oxides offer the advantages of low-cost, high-throughput fabrication of electronic devices compared to the specific requirements of vacuum deposition techniques. However, adapting the current state of the art to ink deposition calls for optimization of the precursor ink composition and the postdeposition process. Solution processing of indium tin oxide films can be accomplished at reduced temperatures (250-400 °C) by annealing soluble precursor metal salts together with a fuel/oxidizer, causing an exothermic reaction with elevated local temperatures. Following layer-by-layer cycles of deposition and annealing, a postprocessing step is required via heating (300 °C) under a 5% H2 reducing atmosphere. To address the discrepancy between the versatility of ink deposition and the limitations of controlled atmosphere postprocessing, here we investigate the effects of postprocess dipping in aqueous sodium borohydride at room temperature as an alternative, which allows for a completely solution-based process from ink to film. In addition to postprocessing, the solution composition was also optimized by removing the fuel additive and by adjusting the In/Sn content. Indium tin oxide (ITO) films were spin-coated and annealed in air at 250, 300, and 400 °C and characterized by UV/vis spectroscopy to obtain optical transmittance, atomic force microscopy to obtain film thickness and surface morphology, and a Hall effect system for electrical parameters. Additional data from X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) indicate that crystallinity is affected by the reducing environment. Results revealed an order-of-magnitude improvement of the Haacke figure of merit (FOM) from 4.3 × 10-4 Ω-1, 382 Ω/□ sheet resistance (Rs), and 84% transmittance (%T) for the traditional 9:1 In/Sn precursor ink with fuel additive followed by 300 °C of 5% H2-furnace post-treatment compared to that of the optimized fully solution-processed 8.5:1.5 In/Sn ink without fuel followed by an ambient air at 25 °C dipping in aqueous sodium borohydride, leading to 3.0 × 10-3 Ω-1 FOM, 84.5 Ω/□ Rs, and 87%T including the glass substrate.
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Affiliation(s)
- Nicholas R D'Antona
- Department of Chemistry & Biochemistry, St. Mary's College of Maryland, 47645 College Dr, St. Mary's City, Maryland 20686, United States
| | - Peter Orban
- Department of Chemistry & Biochemistry, St. Mary's College of Maryland, 47645 College Dr, St. Mary's City, Maryland 20686, United States
| | - Noah H Walsh
- Department of Chemistry & Biochemistry, St. Mary's College of Maryland, 47645 College Dr, St. Mary's City, Maryland 20686, United States
| | - Dario G Durastanti
- Department of Chemistry & Biochemistry, St. Mary's College of Maryland, 47645 College Dr, St. Mary's City, Maryland 20686, United States
| | - Elena M Donahue
- Department of Chemistry & Biochemistry, St. Mary's College of Maryland, 47645 College Dr, St. Mary's City, Maryland 20686, United States
| | - Gina M Canfield
- Naval Surface Warfare Center Indian Head Division, 3196 Deep Point Ct., Indian Head, Maryland 20640, United States
| | - Coit T Hendley
- Naval Surface Warfare Center Indian Head Division, 3196 Deep Point Ct., Indian Head, Maryland 20640, United States
| | - Andrew T Kerr
- Naval Surface Warfare Center Indian Head Division, 3196 Deep Point Ct., Indian Head, Maryland 20640, United States
| | - Troy K Townsend
- Department of Chemistry & Biochemistry, St. Mary's College of Maryland, 47645 College Dr, St. Mary's City, Maryland 20686, United States
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Wan D, Wang Q, Huang H, Jiang B, Chen C, Yang Z, Li G, Liu C, Liu X, Liao L. Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction. NANOTECHNOLOGY 2021; 32:135201. [PMID: 33410417 DOI: 10.1088/1361-6528/abd2e8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS2 van der Waals Schottky junction as a local gate, in which the rectification behavior of the heterojunction offers the modulation of channel carriers. The trap-free gate interface enables the hysteresis-free characteristics of the transistors, and promises an ideal SS of 64 mV/dec at room temperature. All the devices operate with a low threshold voltage less than -1 V with desirable saturation behavior. An OR logic gate is constructed with the dual-gated MoS2 transistors by varying the back and top gate voltage. The strategy present here is promising for the design of low-power digital electronics based on 2D materials.
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Affiliation(s)
- Da Wan
- School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, 430081, People's Republic of China
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6
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Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide. Proc Natl Acad Sci U S A 2020; 117:18231-18239. [PMID: 32703807 DOI: 10.1073/pnas.2007897117] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm2/Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state 1H, 71Ga, and 115In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The 71Ga{1H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ∼3.4 Å and conversion from six- to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.
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Chen C, Yang B, Li G, Zhou H, Huang B, Wu Q, Zhan R, Noh Y, Minari T, Zhang S, Deng S, Sirringhaus H, Liu C. Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801189. [PMID: 30989018 PMCID: PMC6446609 DOI: 10.1002/advs.201801189] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2018] [Revised: 11/15/2018] [Indexed: 06/09/2023]
Abstract
For newly developed semiconductors, obtaining high-performance transistors and identifying carrier mobility have been hot and important issues. Here, large-area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in the drain current and on-off ratio is remarkable in the long-channel devices (e.g., 40 times in 200 µm long transistors) but becomes much less pronounced in short-channel devices (e.g., 2 times in 5 µm long transistors), which limits its application to the display industry. Combining gated four-probe measurements, scanning Kelvin-probe microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and device simulations, it is revealed that the enhanced apparent mobility up to several tens of times is attributed to the stabilized hydrogens in the middle area forming a degenerated channel area while that near the source-drain contacts are merely doped, which causes artifact in mobility extraction. The studies demonstrate the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation. Also, this study shows clearly that a thorough analysis is necessary to understand the origin of very high apparent mobilities in thin-film transistors or field-effect transistors with advanced semiconductors.
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Affiliation(s)
- Changdong Chen
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
| | - Bo‐Ru Yang
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
| | - Gongtan Li
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
| | - Hang Zhou
- Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate SchoolPeking UniversityShenzhen518055China
| | - Bolong Huang
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong SAR
- The Hong Kong Polytechnic University Shenzhen Research InstituteShenzhen518057China
| | - Qian Wu
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
| | - Runze Zhan
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
| | - Yong‐Young Noh
- Department of Energy and Materials EngineeringDongguk University30 Pildong‐ro, 1 gil, Jung‐guSeoul04620Republic of Korea
| | - Takeo Minari
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)TsukubaIbaraki305‐0044Japan
| | - Shengdong Zhang
- Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate SchoolPeking UniversityShenzhen518055China
| | - Shaozhi Deng
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
| | | | - Chuan Liu
- State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen UniversityGuangdong510275China
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8
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Shao Y, Wu X, Zhang MN, Liu WJ, Ding SJ. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al 2O 3 Dielectric. NANOSCALE RESEARCH LETTERS 2019; 14:122. [PMID: 30941527 PMCID: PMC6445835 DOI: 10.1186/s11671-019-2959-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2018] [Accepted: 03/26/2019] [Indexed: 06/09/2023]
Abstract
Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al2O3 dielectric deposited at room temperature, which exhibit a high field-effect mobility of 19.5 cm2 V- 1 s- 1, a small subthreshold swing of 160 mV/dec, a low threshold voltage of 0.1 V, a large on/off current ratio of 4.5 × 108, and superior negative and positive gate bias stabilities. This is attributed to the hydrogen-rich Al2O3 dielectric deposited at room temperature in comparison with higher deposition temperatures, thus efficiently passivating the interfacial states of a-IGZO/Al2O3 and the oxygen vacancies and improving conductivity of the a-IGZO channel by generating additional electrons because of enhanced hydrogen doping during sputtering of IGZO. Such an extremely low thermal budget for high-performance a-IGZO TFTs is very attractive for flexible electronic application.
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Affiliation(s)
- Yan Shao
- School of Microelectronics, Fudan University, Shanghai, 200433 People’s Republic of China
| | - Xiaohan Wu
- School of Microelectronics, Fudan University, Shanghai, 200433 People’s Republic of China
| | - Mei-Na Zhang
- School of Microelectronics, Fudan University, Shanghai, 200433 People’s Republic of China
| | - Wen-Jun Liu
- School of Microelectronics, Fudan University, Shanghai, 200433 People’s Republic of China
| | - Shi-Jin Ding
- School of Microelectronics, Fudan University, Shanghai, 200433 People’s Republic of China
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9
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Altin A, Krzywiecki M, Sarfraz A, Toparli C, Laska C, Kerger P, Zeradjanin A, Mayrhofer KJJ, Rohwerder M, Erbe A. Cyclodextrin inhibits zinc corrosion by destabilizing point defect formation in the oxide layer. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2018; 9:936-944. [PMID: 29600153 PMCID: PMC5870151 DOI: 10.3762/bjnano.9.86] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2017] [Accepted: 02/12/2018] [Indexed: 06/08/2023]
Abstract
Corrosion inhibitors are added in low concentrations to corrosive solutions for reducing the corrosion rate of a metallic material. Their mechanism of action is typically the blocking of free metal surface by adsorption, thus slowing down dissolution. This work uses electrochemical impedance spectroscopy to show the cyclic oligosaccharide β-cyclodextrin (β-CD) to inhibit corrosion of zinc in 0.1M chloride with an inhibition efficiency of up to 85%. Only a monomolecular adsorption layer of β-CD is present on the surface of the oxide covered metal, with Raman spectra of the interface proving the adsorption of the intact β-CD. Angular dependent X-ray photoelectron spectroscopy (ADXPS) and ultraviolet photoelectron spectroscopy (UPS) were used to extract a band-like diagram of the β-CD/ZnO interface, showing a large energy level shift at the interface, closely resembling the energy level alignment in an n-p junction. The energy level shift is too large to permit further electron transfer through the layer, inhibiting corrosion. Adsorption hence changes the defect density in the protecting ZnO layer. This mechanism of corrosion inhibition shows that affecting the defect chemistry of passivating films by molecular inhibitors maybe a viable strategy to control corrosion of metals.
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Affiliation(s)
- Abdulrahman Altin
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
| | - Maciej Krzywiecki
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
- Institute of Physics–CSE, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland
| | - Adnan Sarfraz
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
| | - Cigdem Toparli
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
| | - Claudius Laska
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
| | - Philipp Kerger
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
| | - Aleksandar Zeradjanin
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
- Forschungszentrum Jülich GmbH, Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (IEK-11), Egerlandstraße 3, 91058 Erlangen, Germany
| | - Karl J J Mayrhofer
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
- Forschungszentrum Jülich GmbH, Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (IEK-11), Egerlandstraße 3, 91058 Erlangen, Germany
| | - Michael Rohwerder
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
| | - Andreas Erbe
- Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
- Department of Materials Science and Engineering, NTNU, Norwegian University of Science and Technology, 7491 Trondheim, Norway
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10
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Effect of cadmium incorporation on the properties of zinc oxide thin films. APPLIED NANOSCIENCE 2018. [DOI: 10.1007/s13204-018-0661-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
Abstract
Abstract
Cd
x
Zn1−x
O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd
x
Zn1−x
O thin films are subjected to annealing. Both the as-deposited and annealed Cd
x
Zn1−x
O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd
x
Zn1−x
O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd
x
Zn1−x
O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV–Vis spectroscopy shows red shift in the band gap for Cd
x
Zn1−x
O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.
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11
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Kim HJ, Tak YJ, Park SP, Na JW, Kim YG, Hong S, Kim PH, Kim GT, Kim BK, Kim HJ. The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films. Sci Rep 2017; 7:12469. [PMID: 28963493 PMCID: PMC5622114 DOI: 10.1038/s41598-017-12818-1] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2017] [Accepted: 09/14/2017] [Indexed: 12/02/2022] Open
Abstract
In this study, we propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. This SRD method, which uses UV irradiation and thermal hydrogen peroxide solution treatment, effectively decreased the amount of oxygen vacancies and facilitated self-passivation and doping effect by radical reaction with photo-activated oxygen defects. As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. The mobility increased from 9.1 to 17.5 cm2/Vs, on-off ratio increased from 8.9 × 107 to 7.96 × 109, and the threshold voltage shift of negative bias-illumination stress for 3600 secs under 5700 lux of white LED and negative bias-temperature stress at 50 °C decreased from 9.6 V to 4.6 V and from 2.4 V to 0.4 V, respectively.
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Affiliation(s)
- Hong Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea.,LG Display Co., Ltd., 1007, Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do, 413-811, Republic of Korea
| | - Young Jun Tak
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Sung Pyo Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Jae Won Na
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Yeong-Gyu Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Seonghwan Hong
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Pyeong Hun Kim
- LG Display Co., Ltd., 1007, Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do, 413-811, Republic of Korea
| | - Geon Tae Kim
- LG Display Co., Ltd., 1007, Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do, 413-811, Republic of Korea
| | - Byeong Koo Kim
- LG Display Co., Ltd., 1007, Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do, 413-811, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea.
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12
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Abliz A, Gao Q, Wan D, Liu X, Xu L, Liu C, Jiang C, Li X, Chen H, Guo T, Li J, Liao L. Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:10798-10804. [PMID: 28266830 DOI: 10.1021/acsami.6b15275] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (α-IGZO) TFTs. The performance and bias stress stability of α-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.3 cm2/(V s) and small shifts of threshold voltage (Vth). On the basis of X-ray photoelectron spectroscopy analysis, the improved electrical performances of α-IGZO TFT should be attributed to the appropriate amount of N/H codoping, which could not only control the Vth and carrier concentration efficiently, but also passivate the defects such as oxygen vacancy due to the formation of stable Zn-N and N-H bonds. Meanwhile, low-frequency noise analysis indicates that the average trap density near the α-IGZO/SiO2 interface is reduced by the nitrogen and hydrogen plasma treatment. This method could provide a step toward the development of α-IGZO TFTs for potential applications in next-generation high-definition optoelectronic displays.
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Affiliation(s)
- Ablat Abliz
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Qingguo Gao
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Da Wan
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Xingqiang Liu
- Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University , Changsha 410082, China
| | - Lei Xu
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Chuansheng Liu
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Changzhong Jiang
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Xuefei Li
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China
| | - Jinchai Li
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
| | - Lei Liao
- Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China
- Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University , Changsha 410082, China
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