Cross-Linkable Hole-Transport Materials Improve the Device Performance of Perovskite Light-Emitting Diodes

Thermal Properties of Polymer Hole-Transport Layers Influence the Efficiency Roll-off and Stability of Perovskite Light-Emitting Diodes

While the performance of metal halide perovskite light-emitting diodes (PeLEDs) has rapidly improved in recent years, their stability remains a bottleneck to commercial realization. Here, we show that the thermal stability of polymer hole-transport layers (HTLs) used in PeLEDs represents an important factor influencing the external quantum efficiency (EQE) roll-off and device lifetime. We demonstrate a reduced EQE roll-off, a higher breakdown current density of approximately 6 A cm^-2, a maximum radiance of 760 W sr^-1 m^-2, and a longer device lifetime for PeLEDs using polymer HTLs with high glass-transition temperatures. Furthermore, for devices driven by nanosecond electrical pulses, a record high radiance of 1.23 MW sr^-1 m^-2 and an EQE of approximately 1.92% at 14.6 kA cm^-2 are achieved. Thermally stable polymer HTLs enable stable operation of PeLEDs that can sustain more than 11.7 million electrical pulses at 1 kA cm^-2 before device failure.

Engineering of Hole Transporting Interface by Incorporating the Atomic-Precision Ag6 Nanoclusters for High-Efficiency Blue Perovskite Light-Emitting Diodes

Properties of the underlying hole transport layer (HTL) play a crucial role in determining the optoelectronic performance of perovskite light-emitting devices (PeLEDs). However, endowing the current HTL system with a deep highest occupied molecular orbital (HOMO) level concurrent with high hole mobility is still a big challenge, in particular being an open constraint toward high-efficiency blue PeLEDs. In this regard, employing the poly(9-vinylcarbazole) as a model, we perform efficient incorporation of the atomic-precision metal nanoclusters (NCs), [Ag₆PL₆, PL = (S)-4-phenylthiazolidine-2-thione], to achieve significant tailoring in both HOMO energy level and hole mobility. As a result, the as-modified PeLEDs exhibit an external quantum efficiency (EQE) of 14.29% at 488 nm. The presented study exemplifies the success of metal NC involved HTL engineering and offers a simple yet effective additive strategy to settle the blue PeLED HTL dilemma, which paves the way for the fabrication of highly efficient blue PeLEDs.

Surface-Passivated Single-Crystal Micro-Plates for Efficient Perovskite Solar Cells

Perovskite solar cells (PeSCs) prepared with single crystals (SCs) ideally exhibit higher power conversion efficiencies (PCEs) because they possess a lower density of structural imperfection and superior charge transport. However, the density of the surface defects on the SCs is still very high, thereby inevitably affecting the device performance. Herein, perovskite single-crystal micro-plates were grown on a hole-transporting material, poly[bis(4-phenyl)(2,4,6-trimethylphenyl) amine], through a space-limited inverse temperature crystallization method. The surfaces of the as-prepared SCs were passivated using trioctylphosphine oxide (TOPO) during the device fabrication to alleviate the impact of surface defects. The PCE values are averagely improved from 11.90 ± 0.30% to 14.76 ± 0.65% after the surface passivation; the champion device even exhibits a PCE of 15.65%. The results from photoluminescence and hole-only devices reveal that TOPO treatments effectively reduce the number of surface defects on the single crystals, thereby improving the photovoltaic performance. The surface passivation also inhibits the hysteresis behavior due to the lower defect density. Finally, the TOPO treatment also improves the stability of the single-crystal PeSCs, presumably due to the hydrophobic long alkyl chains. Thus, this work provides an effective approach to achieving high efficiencies of single-crystal PeSCs.

Position Effects of Metal Nanoparticles on the Performance of Perovskite Light-Emitting Diodes

Metal nanoparticles have been widely used for improving the efficiencies of many optoelectronic devices. Herein, position effects of gold nanoparticles (Au NPs) on the performance of perovskite light-emitting diodes (PeLEDs) are investigated. Amphiphilic Au NPs are synthesized so that they can be incorporated into different layers of the PeLEDs to enhance device efficiencies. The photoluminescent (PL) studies indicate apparent position effects; the strongest PL intensity occurs when the NPs are directly blended with the light-emitting perovskite layer. In contrast, the PeLEDs exhibit the highest luminance efficiency while the Au NPs are placed in the hole-transporting layer. The direct blending of the NPs in the perovskite layer might affect the electrical properties, resulting in inferior device performance. The results reported herein can help to understand the enhancing mechanism of the PeLEDs and may also lead to even better efficiencies in the near future.

Multifunctional Charge Transporting Materials for Perovskite Light-Emitting Diodes

Despite their low exciton-binding energies, metal halide perovskites are extensively studied as light-emitting materials owing to narrow emission with high color purity, easy/wide color tunability, and high photoluminescence quantum yields. To improve the efficiency of perovskite light-emitting diodes (PeLEDs), much effort has been devoted to controlling the emitting layer morphologies to induce charge confinement and decrease the nonradiative recombination. The interfaces between the emitting layer and charge transporting layer (CTL) are vulnerable to various defects that deteriorate the efficiency and stability of the PeLEDs. Therefore, the establishment of multifunctional CTLs that can improve not only charge transport but also critical factors that influence device performance, such as defect passivation, morphology/phase control, ion migration suppression, and light outcoupling efficiency, are highly required. Herein, the fundamental limitations of perovskites as emitters (i.e., defects, morphological and phase instability, high refractive index with poor outcoupling) and the recent developments with regard to multifunctional CTLs to compensate such limitations are summarized, and their device applications are also reviewed. Finally, based on the importance of multifunctional CTLs, the outlook and research prospects of multifunctional CTLs for the further improvement of PeLEDs are discussed.

Improved Electroluminescence Performance of Perovskite Light-Emitting Diodes by a New Hole Transporting Polymer Based on the Benzocarbazole Moiety

A new hole-transporting material, poly-2-(9H-carbazol-9-yl)-5-(4-vinylphenyl)-5H-benzo[b]carbazole (PBCZCZ), was developed for perovskite light-emitting diodes (PeLEDs). This polymer, which is based on the benzocarbazole moiety, has good solubility in common solvents and enabled the fabrication of highly efficient multilayer perovskite devices. It has excellent film morphology and a high hole mobility of 3.67 × 10^-5 cm² V^-1 s^-1, which made it possible to vary the device configuration. Green and sky-blue perovskite PeLEDs using PBCZCZ as the hole-transporting layer had current efficiencies and external quantum efficiencies (EQEs) of 43.90 cd A^-1 and 8.67% for the green device and 9.07 cd A^-1 and 4.04% for the sky-blue device, respectively. The EQE of the green PeLEDs was about 2.5 times higher and that of the sky-blue PeLEDs was about 3 times higher than the device made with the commercial HTL of poly(9-vinylcarbazole) (PVK). The operational device lifetimes of the green and sky-blue PeLEDs made with PBCZCZ were about 4.1 and 4.8 times higher than the PVK-containing device, respectively.

Realizing 22.3% EQE and 7-Fold Lifetime Enhancement in QLEDs via Blending Polymer TFB and Cross-Linkable Small Molecules for a Solvent-Resistant Hole Transport Layer

Poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt(4,4'-(N-(4-butylphenyl)))] (TFB) has been widely used as a hole transport layer (HTL) material in cadmium-based quantum dot light-emitting diodes (QLEDs) because of its high hole mobility. However, as the highest occupied molecular orbital (HOMO) energy level of TFB is -5.4 eV, the hole injection from TFB to the quantum dot (QD) layer is higher than 1.5 eV. Such a high oxidation potential at the QD/HTL interface may seriously degrade the device lifetime. In addition, TFB is not resistant to most solvents, which limits its application in inkjet-printed QLED display. In this study, the blended HTL consisting of TFB and cross-linkable small molecular 4,4'-bis(3-vinyl-9H-carbazol-9-yl)1,1'-biphenyl (CBP-V) was introduced into red QLEDs because of the deep HOMO energy level of CBP-V (-6.2 eV). Compared with the TFB-only devices, the external quantum efficiency (EQE) of devices with the blended HTL improved from 15.9 to 22.3% without the increase of turn-on voltage for spin-coating-fabricated devices. Furthermore, the blended HTL prolonged the T90 and T70 lifetime from 5.4 and 31.1 to 39.4 and 148.9 h, respectively. These enhancements in lifetime are attributed to the low hole-injection barrier at the HTL/QD interface and high thermal stability of the blended HTL after cross-linking. Moreover, the cross-linked blended HTL showed excellent solvent resistance after cross-linking, and the EQE of the inkjet-printed red QLEDs reached 16.9%.

Interface and Defect Engineering for Metal Halide Perovskite Optoelectronic Devices

Metal halide perovskites have been in the limelight in recent years due to their enormous potential for use in optoelectronic devices, owing to their unique combination of properties, such as high absorption coefficient, long charge-carrier diffusion lengths, and high defect tolerance. Perovskite-based solar cells and light-emitting diodes (LEDs) have achieved remarkable breakthroughs in a comparatively short amount of time. As of writing, a certified power conversion efficiency of 22.7% and an external quantum efficiency of over 10% have been achieved for perovskite solar cells and LEDs, respectively. Interfaces and defects have a critical influence on the properties and operational stability of metal halide perovskite optoelectronic devices. Therefore, interface and defect engineering are crucial to control the behavior of the charge carriers and to grow high quality, defect-free perovskite crystals. Herein, a comprehensive review of various strategies that attempt to modify the interfacial characteristics, control the crystal growth, and understand the defect physics in metal halide perovskites, for both solar cell and LED applications, is presented. Lastly, based on the latest advances and breakthroughs, perspectives and possible directions forward in a bid to transcend what has already been achieved in this vast field of metal halide perovskite optoelectronic devices are discussed.

Inkjet-Printed High-Efficiency Multilayer QLEDs Based on a Novel Crosslinkable Small-Molecule Hole Transport Material

Quantum dots light-emitting diodes (QLEDs) have attracted much interest owing to their compatibility with low-cost inkjet printing technology and potential for use in large-area full-color pixelated display. However, it is challenging to fabricate high efficiency inkjet-printed QLEDs because of the coffee ring effects and inferior resistance to solvents from the underlying polymer film during the inkjet printing process. In this study, a novel crosslinkable hole transport material, 4,4'-bis(3-vinyl-9H-carbazol-9-yl)-1,1'-biphenyl (CBP-V) which is small-molecule based, is synthesized and investigated for inkjet printing of QLEDs. The resulting CBP-V film after thermal curing exhibits excellent solvent resistance properties without any initiators. An added advantage is that the crosslinked CBP-V film has a sufficiently low highest occupied molecular orbital energy level (≈-6.2 eV), high film compactness, and high hole mobility, which can thus promote the hole injection into quantum dots (QDs) and improve the charge carrier balance within the QD emitting layers. A red QLED is successfully fabricated by inkjet printing a CBP-V and QDs bilayer. Maximum external quantum efficiency of 11.6% is achieved, which is 92% of a reference spin-coated QLED (12.6%). This is the first report of such high-efficiency inkjet-printed multilayer QLEDs and demonstrates a unique and effective approach to inkjet printing fabrication of high-performance QLEDs.

Bidentate chelating ligands as effective passivating materials for perovskite light-emitting diodes

Aromatic chelating ligands are used as surface passivating agents to fix the defects of the perovskite layers in light-emitting diodes.

A simple method to improve the performance of perovskite light-emitting diodes via layer-by-layer spin-coating CsPbBr3 quantum dots

Recently, all-inorganic halide perovskite quantum dots have become a very promising material for light-emitting diodes. Herein, we demonstrate a facile method, namely, layer-by-layer spin-coating of CsPbBr₃ QDs to improve device performance. After optimization of the number of emissive layers, the maximum EQE can be increased from an initial value of 0.69% to 2.31%. Additionally, we inserted a CBP layer between PEDOT:PSS and CsPbBr₃ multilayers to balance charge transportation and recombination. As a result, a 37% improvement in EQE (up to 3.16%) and highest luminance of 2629 cd m⁻² are obtained.

Schematic diagram of perovskite LEDs and EQE–voltage curves of these devices.

Interfacial engineering with ultrathin poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) layer for high efficient perovskite light-emitting diodes

Organic-inorganic hybrid perovskites have attracted great attention in the field of lighting and display due to their very high color purity and low-cost solution-process. Researchers have done a lot of work in realizing high performance electroluminescent devices. However, the current efficiency (CE) of methyl-ammonium lead halide perovskite light-emitting diodes (PeLEDs) still needs to be improved. Herein, we demonstrate the enhanced performance of PeLEDs through introducing an ultrathin poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) buffer layer between poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and CH₃NH₃PbBr₃ perovskite. Compared to the reference device without PFO, the optimal device luminous intensity, the maximum CE, and the maximum external quantum efficiency increases from 8139 cd m^-2 to 30 150 cd m^-2, from 7.20 cd A^-1 (at 6.8 V) to 10.05 cd A^-1 (at 6.6 V), and from 1.73% to 2.44%, respectively. The ultrathin PFO layer not only reduces the exciton quenching at the interface between the hole-transport layer and emission layer, but also passivates the shallow-trap ensure increasing hole injection, as well as increases the coverage of perovskite film.

84% efficiency improvement in all-inorganic perovskite light-emitting diodes assisted by a phosphorescent material

A novel mixed perovskite emitter layer is applied to design all-inorganic cesium lead halide perovskite light-emitting diodes (PeLEDs) with high electroluminescence (EL) performance, by combining CsPbBr₃ with iridium(iii)bis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]-picolinate (FIrpic), where FIrpic is a phosphorescent material with very high internal quantum efficiency (IQE) approaching 100%. The CsPbBr₃:FIrpic PeLEDs show a maximum luminance of 5486 cd m⁻², and an external quantum efficiency of 0.47%, which are 1.84 and 1.76 times that of neat CsPbBr₃ PeLEDs, respectively. It is found that FIrpic molecules as an assistant dopant can efficiently transmit energy from the excitons of FIrpic to the excited state of the CsPbBr₃ emitter via a Förster energy transfer process, leading to enhanced EL efficiency in the CsPbBr₃:FIrpic PeLEDs.

Remarkable EL performance is achieved in CsPbBr₃:FIrpic perovskite light-emitting diodes assisted by a phosphorescent material.

Vacuum-Deposited Organometallic Halide Perovskite Light-Emitting Devices

In this work, a sequential vacuum deposition process of bright, highly crystalline, and smooth methylammonium lead bromide and phenethylammonium lead bromide perovskite thin films are investigated and the first vacuum-deposited organometallic halide perovskite light-emitting devices (PeLEDs) are demonstrated. Exceptionally low refractive indices and extinction coefficients in the emission wavelength range are obtained for these films, which contributed to a high light out-coupling efficiency of the PeLEDs. By utilizing these perovskite thin films as emission layers, the vacuum-deposited PeLEDs exhibit a very narrow saturated green electroluminescence at 531 nm, with a spectral full width at half-maximum bandwidth of 18.6 nm, a promising brightness of up to 6200 cd/m², a current efficiency of 1.3 cd/A, and an external quantum efficiency of 0.36%.

Pyridine-Based Electron-Transport Materials with High Solubility, Excellent Film-Forming Ability, and Wettability for Inkjet-Printed OLEDs

Film morphology has predominant influence on the performance of multilayered organic light-emitting diodes (OLEDs), whereas there is little reported literature from the angle of the molecular level to investigate the impact on film-forming ability and device performance. In this work, four isomeric cross-linkable electron-transport materials constructed with pyridine, 1,2,4-triazole, and vinylbenzyl ether groups were developed for inkjet-printed OLEDs. Their lowest unoccupied molecular orbital (∼3.20 eV) and highest occupied molecular orbital (∼6.50 eV) levels are similar, which are mainly determined by the 1,2,4-triazole groups. The triplet energies of these compounds can be tuned from 2.51 to 2.82 eV by different coupling modes with the core of pyridine, where the 2,6-pyridine-based compound has the highest value of 2.82 eV. Film formation and solubility of the compounds were investigated. It was found that the 2,6-pyridine-based compound outperformed the 2,4-pyridine, 2,5-pyridine, and 3,5-pyridine-based compounds. The spin-coated blue OLEDs based on the four compounds have achieved over 14.0% external quantum efficiencies (EQEs) at the luminance of 100 cd m^-2, and a maximum EQE of 12.1% was obtained for the inkjet-printed device with 2,6-pyridine-based compound.

Modified Conducting Polymer Hole Injection Layer for High-Efficiency Perovskite Light-Emitting Devices: Enhanced Hole Injection and Reduced Luminescence Quenching

Modification of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with sodium-poly(styrenesulfonate) leads to a ca. 0.3 eV increase in the work function and 15 times enhancement in the photoluminescence intensity of the overlying perovskite layer, which is closely correlated with the formation of a highly PSS-enriched top layer. As a direct result, the hybrid halide perovskite light-emitting devices with a modified PEDOT:PSS layer show the maximum external quantum efficiency of 7.2% and power efficiency of 19.0 lm W^-1, which are 14-20 times those of the analogous devices using a pristine PEDOT:PSS layer and among the best reported values for the light-emitting devices using a neat perovskite emission layer. Our results illustrate that insufficient hole injection and luminescence quenching at the PEDOT:PSS anode are among the most important factors limiting the external quantum efficiencies of inverted perovskite light-emitting devices.

Inkjet-Printed Quantum Dot Light-Emitting Diodes with an Air-Stable Hole Transport Material

High-efficiency quantum dot light-emitting diodes (QLEDs) were fabricated using inkjet printing with a novel cross-linkable hole transport material N,N'-(9,9'-spirobi[fluorene]-2,7-diylbis[4,1-phenylene])bis(N-phenyl-4'-vinyl-[1,1'-biphenyl]-4-amine) (SDTF). The cross-linked SDTF film has excellent solvent resistance, high thermal stability, and the highest occupied molecular orbital (HOMO) level of -5.54 eV. The inkjet-printed SDTF film is very smooth and uniform, with roughness as low as 0.37 nm, which is comparable with that of the spin-coated film (0.28 nm). The SDTF films stayed stable without any pinhole or grain even after 2 months in air. All-solution-processed QLEDs were fabricated; the maximum external quantum efficiency of 5.54% was achieved with the inkjet-printed SDTF in air, which is comparable to that of the spin-coated SDTF in a glove box (5.33%). Electrical stabilities of both spin-coated and inkjet-printed SDTF at the device level were also investigated and both showed a similar lifetime. The study demonstrated that SDTF is very promising as a printable hole transport material for making QLEDs using inkjet printing.