Flexible and Highly Photosensitive Electrolyte-Gated Organic Transistors with Ionogel/Silver Nanowire Membranes

Versatile near-infrared polarization-sensitive ionic liquid-gated organic electrochemical phototransistor

In response to the rising demand for diversified detection capabilities, multi-dimensional and multi-functional optoelectronic devices have become a significant focus in scientific research. The organic electrochemical phototransistor (OECPT) is a pioneering photoelectric conversion device whose unique operating mechanism positions it as a strong candidate for applications in areas such as biological systems, sensing, and artificial neural network modeling. In this study, polarization-responsive OECPT devices were fabricated by combining thermally oriented anisotropic thin films with ionic liquid gating. The resulting devices demonstrated a distinct polarization sensitivity in the near-infrared region, achieving a photogenerated current dichroic ratio of 1.52. Furthermore, by modulating device non-volatility vis gate voltage, we explored the potential of OECPTs in neural synapse emulation and optoelectronic memory storage. These findings provide valuable insights for advancing the design and application of polarization-sensitive OECPT devices in multifunctional optoelectronic systems.

Effect of Alkyl Side Chain Length on Electrical Performance of Ion-Gel-Gated OFETs Based on Difluorobenzothiadiazole-Based D-A Copolymers

The performance of organic field-effect transistors (OFETs) is highly dependent on the dielectric-semiconductor interface, especially in ion-gel-gated OFETs, where a significantly high carrier density is induced at the interface at a low gate voltage. This study investigates how altering the alkyl side chain length of donor-acceptor (D-A) copolymers impacts the electrical performance of ion-gel-gated OFETs. Two difluorobenzothiadiazole-based D-A copolymers, PffBT4T-2OD and PffBT4T-2DT, are compared, where the latter features longer alkyl side chains. Although PffBT4T-2DT shows a 2.4-fold enhancement of charge mobility in the SiO2-gated OFETs compared to its counterpart due to higher crystallinity in the film, PffBT4T-2OD outperforms PffBT4T-2DT in the ion-gel-gated OFETs, manifested by an extraordinarily high mobility of 17.7 cm2/V s. The smoother surface morphology, as well as stronger interfacial interaction between the ion-gel dielectric and PffBT4T-2OD, enhances interfacial charge accumulation, which leads to higher mobility. Furthermore, PffBT4T-2OD is blended with a polymeric elastomer SEBS to achieve ion-gel-gated flexible OFETs. The blend devices exhibit high mobility of 8.6 cm2/V s and high stretchability, retaining 45% of initial mobility under 100% tensile strain. This study demonstrates the importance of optimizing the chain structure of polymer semiconductors and the semiconductor-dielectric interface to develop low-voltage and high-performance flexible OFETs for wearable electronics applications.

Influence of PCBM Nanocrystals on the Donor-Acceptor Polymer Ultraviolet Phototransistors

Organic phototransistors, renowned for their exceptional biocompatibility, hold promise in phototherapy for tracking the efficacy of photosensitive drugs within treatment areas. Nevertheless, it has been found that organic semiconductors are less effective in detecting ultraviolet (UV) light because of their narrow bandgap. Here, we show that UV photodetection in phototransistors using donor-acceptor (D-A) polymer semiconductors can be significantly enhanced by incorporating PCBM nanocrystals. This integration results in a band mismatch between the nanocrystals and the D-A polymer at the interface. These nanocrystals also demonstrate a notable capability of modulating threshold voltage under UV light. The devices incorporating nanocrystals exhibit a photoresponsivity of 0.16 A/W, surpassing the photoresponsivity of the devices without nanocrystals by 50%. The specific detection rate of devices with nanocrystals is around 2.00 × 1010 Jones, which is twice as high as that of devices without nanocrystals. The presented findings offer a potential avenue to improve the efficiency of polymer phototransistors for UV detection.

Highly Stretchable Double Network Ionogels for Monitoring Physiological Signals and Detecting Sign Language

At the heart of the non-implantable electronic revolution lies ionogels, which are remarkably conductive, thermally stable, and even antimicrobial materials. Yet, their potential has been hindered by poor mechanical properties. Herein, a double network (DN) ionogel crafted from 1-Ethyl-3-methylimidazolium chloride ([Emim]Cl), acrylamide (AM), and polyvinyl alcohol (PVA) was constructed. Tensile strength, fracture elongation, and conductivity can be adjusted across a wide range, enabling researchers to fabricate the material to meet specific needs. With adjustable mechanical properties, such as tensile strength (0.06-5.30 MPa) and fracture elongation (363-1373%), this ionogel possesses both robustness and flexibility. This ionogel exhibits a bi-modal response to temperature and strain, making it an ideal candidate for strain sensor applications. It also functions as a flexible strain sensor that can detect physiological signals in real time, opening doors to personalized health monitoring and disease management. Moreover, these gels' ability to decode the intricate movements of sign language paves the way for improved communication accessibility for the deaf and hard-of-hearing community. This DN ionogel lays the foundation for a future in which e-skins and wearable sensors will seamlessly integrate into our lives, revolutionizing healthcare, human-machine interaction, and beyond.

Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent Photoconductivity Application in Optical Memory

Organic phototransistors (OPTs) based on polymers have attracted substantial attention due to their excellent signal amplification, significant noise reduction, and solution process. Recently, the near-infrared (NIR) detection becomes urgent for OPTs with the increased demand for biomedicine, medical diagnostics, and health monitoring. To achieve this goal, a low working voltage of the OPTs is highly desirable. Therefore, the traditional dielectric gate can be replaced by an electrolyte gate to form electrolyte-gated organic phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 V but also are biocompatible. PCDTPT, one of the most popular narrow band gap donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity of 7.08 × 10¹¹ Jones and the photoresponsivity of 3.56 A/W at a low operating voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon was also observed when the device was exposed to air. The PPC characteristic of the EGOPT in air has been used to achieve a phototransistor memory, and the gate bias can directly eliminate the PPC as an erasing operation. This work reveals the underlying mechanism of the electrolyte-gated organic phototransistor memories and broadens the application of the EGOPTs.

Organic Single-Crystalline Microwire Arrays toward High-Performance Flexible Near-Infrared Phototransistors

Flexible organic near-infrared (NIR) phototransistors hold promising prospects for potential applications such as noninvasive bioimaging, health monitoring, and biometric authentication. For integrated circuits of high-performance devices, organic single-crystalline micro-/nanostructures with precise positioning are prominently anticipated. However, the manufacturing of organic single-crystalline arrays remains a conundrum due to difficulties encountered in patterning arrays of dewetting processes at micron-scale confined space and modulating the dewetting dynamics. Herein, we utilize a capillary-bridge lithography strategy to fabricate organic 1D arrays with high quality, homogeneous size, and deterministic location toward high-performance flexible organic NIR phototransistors. Regular micro-liquid stripes and unidirectional dewetting are synchronously achieved by adapting micropillar templates with asymmetric wettability. As a result, high-throughput 1D arrays based organic field-effect transistors exhibit high electron mobility up to 9.82 cm²  V^-1  s^-1 . Impressively, flexible NIR phototransistors also show outstanding photoelectronic performances with a photosensitivity of 9.87 × 10⁵ , a responsivity of 1.79 × 10⁴  A W^-1 , and a specific detectivity of 3.92 × 10¹⁴ Jones. This work paves a novel way to pattern high-throughput organic single-crystalline microarrays toward flexible NIR organic optoelectronics.

Silver Nanowire Synthesis and Strategies for Fabricating Transparent Conducting Electrodes

One-dimensional metal nanowires, with novel functionalities like electrical conductivity, optical transparency and high mechanical stiffness, have attracted widespread interest for use in applications such as transparent electrodes in optoelectronic devices and active components in nanoelectronics and nanophotonics. In particular, silver nanowires (AgNWs) have been widely researched owing to the superlative thermal and electrical conductivity of bulk silver. Herein, we present a detailed review of the synthesis of AgNWs and their utilization in fabricating improved transparent conducting electrodes (TCE). We discuss a range of AgNW synthesis protocols, including template assisted and wet chemical techniques, and their ability to control the morphology of the synthesized nanowires. Furthermore, the use of scalable and cost-effective solution deposition methods to fabricate AgNW based TCE, along with the numerous treatments used for enhancing their optoelectronic properties, are also discussed.

An ultra-stretchable, highly sensitive and biocompatible capacitive strain sensor from an ionic nanocomposite for on-skin monitoring

Flexible strain sensors that can be comfortably attached onto the skin for real-time and accurate detection of physiological signals are particularly important for the realization of healthcare, soft robotics and human-machine interfacing. It is still challenging to develop strain sensors that satisfy both high stretchability and high sensitivity. Here, we demonstrate an ultra-stretchable, highly sensitive and biocompatible capacitive-type strain sensor based on a nanocomposite containing ionic hydrogels and silver nanofibers (AgNFs). The sensor exhibits an ultra-high stretchability of 1000% and high sensitivity with a maximum gauge factor (GF) of up to 165. We find that the incorporation of AgNFs greatly increases the electrical-double layer (EDL) area at the hydrogel/metal interface and hence enhances by 3 orders of magnitude the strain sensitivity. With a short response time and good operation stability, the sensor and its matrix were successfully applied to monitor various physiological signals such as arm and finger motions, pulse, electrocardiographs (ECG), breath, speaking and emotion changes.

Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors

Organic/inorganic hybrid complementary inverters operating at low voltages (1 V or less) were fabricated by transfer-stamping organic p-type poly(3-hexylthiophene) (P3HT) and inorganic n-type zinc oxide (ZnO) electrolyte-gated transistors (EGTs). A semicrystalline homopolymer-based gel electrolyte, or an ionogel, was also transfer-stamped on the semiconductors for use as a high-capacitance gate insulator. For the ionogel stamping, the thermoreversible crystallization of phase-separated homopolymer crystals, which act as network cross-links, was employed to improve the contact between the gel and the semiconductor channel. The homopolymer ionogel-gated P3HT transistor exhibited a high hole mobility of 2.81 cm²/(V s), and the ionogel-gated n-type ZnO transistors also showed a high electron mobility of 2.06 cm²/(V s). The transfer-stamped hybrid complementary inverter based on the P3HT and ZnO EGTs showed a low-voltage operation with appropriate inversion characteristics including a high voltage gain of ∼18. These results demonstrate that the transfer-stamping strategy provides a facile and reliable processing route for fabricating electrolyte-gated transistors and logic circuits.

Flexible, Low-Voltage, and n-Type Infrared Organic Phototransistors with Enhanced Photosensitivity via Interface Trapping Effect

Flexible and low-voltage near-infrared organic phototransistors (NIR OPTs) were prepared with a low-band gap donor-acceptor conjugated polymer as the semiconductor layer and n-octadecyl phosphonic acid modified anodic alumina (AlO _x/ODPA) as the insulating layer. The phototransistors exhibit the typical n-type transistor characteristics at a voltage below 5 V. The photosensitivity of phototransistors can be enhanced by regulating the packing densities of the ODPA self-assembled monolayers and forming different trap states. The enhanced OPTs exhibit good photosensitivity to 808-980 nm NIR with the photocurrent/dark current ratio and photoresponsivity as high as 5 × 10³ and 20 mA W^-1, respectively, benefiting from the charge-trapping effect at the AlO _x/ODPA interface. The OPTs also present a fast optical switching speed of 20/30 ms and an excellent mechanical flexibility. The outstanding performance of the NIR OPTs indicates that the development of wearable electronics is, indeed, possible.

Flexible and Broad-Spectral Hybrid Optical Modulation Transistor Based on a Polymer-Silver Nanoparticle Blend

The light-matter interplay on a soft substrate is critically important for novel optoelectronic applications such as soft robotics, human-machine interfaces, and wearable devices. Here, we for the first time report a flexible and efficiency-enhanced hybrid optical modulation transistor (h-OMT) in the ultraviolet-infrared spectral range by blending a polymer with silver nanoparticles (AgNPs). The h-OMT device exhibits a unipolar transport and an ultrahigh on-off ratio of ∼4.8 × 10⁶ in a small voltage range of ∼2 V. Using charge modulation reflection spectroscopy, we demonstrate that the h-OMT device shows a broad-spectral response from 400 to 2000 nm and maximum optical modulation of ∼15% at λ = 785 nm, 6-fold higher magnitude than that of the device without AgNPs. Furthermore, the incorporation of AgNPs enhances the extinction ratio by 4-fold magnitude without any complex geometry designs. We find that the performance improvement relies on the AgNP-induced electron trap states and electrochemical dopings in the polymer. Importantly, the device exhibits pronounced mechanical flexibility, and the optical modulation is kept down to a bending radius of 0.5 mm. Our data provide the possibility of organic materials for constructing novel optoelectronic systems in the future.