Ring Fusion Elevates the Electronic Mobility of Azabenzannulated Perylene Diimide

The backwardness of n-type organic semiconductors still exists compared with the p-type counterparts. Thus, the development of high-performance n-type organic semiconductors is of great importance for organic electronic devices and their integrated circuits. In recent years, azabenzannulated perylene diimide (PDI), as one of immense bay-region-annulated PDI derivatives, has drawn considerable attentions. However, the electronic mobilities of azabenzannulated PDI derivatives are barely satisfactory. In this contribution, the peripheral benzene ring in azabenzannulated PDI 2 was fused to the ortho position by intermolecular C-H arylation cyclization. This endows the resultant azabenzannulated PDI 4 a planar configuration as well as electron deficient pentagonal ring. As a result, the electronic mobility of 4 is almost two orders of magnitude higher than that of the nonfused azabenzannulated PDI 2. This work shall pave a new avenue in elevating the performance of azabenzannulated PDI in organic electronics.

Enhancing the Maturation of Human Pluripotent Stem Cell-Derived Cardiomyocytes with an n-Type Organic Semiconductor Coating

Human pluripotent stem cell-derived cardiomyocytes (hPSC-CMs) are a promising cell source for cardiac regenerative medicine and in vitro modeling. However, hPSC-CMs exhibit immature structural and functional properties compared with adult cardiomyocytes. Various electrical, mechanical, and biochemical cues have been applied to enhance hPSC-CM maturation but with limited success. In this work, we investigated the potential application of the semiconducting polymer poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as a light-sensitive material to stimulate hPSC-CMs optically. Our results indicated that P(NDI2OD-T2)-mediated photostimulation caused cell damage at irradiances applied long-term above 36 μW/mm2 and did not regulate cardiac monolayer beating (after maturation) at higher intensities applied in a transient fashion. However, we discovered that the cells grown on P(NDI2OD-T2)-coated substrates showed significantly enhanced expression of cardiomyocyte maturation markers in the absence of a light exposure stimulus. A combination of techniques, such as atomic force microscopy, scanning electron microscopy, and quartz crystal microbalance with dissipation monitoring, which we applied to investigate the interface of the cell with the n-type coating, revealed that P(NDI2OD-T2) impacted the nanostructure, adsorption, and viscoelasticity of the Matrigel coating used as a cell adhesion promoter matrix. This modified cellular microenvironment promoted the expression of cardiomyocyte maturation markers related to contraction, calcium handling, metabolism, and conduction. Overall, our findings demonstrate that conjugated polymers such as P(NDI2OD-T2) can be used as passive coatings to direct stem cell fate through interfacial engineering of cell growth substrates.

Mg Compensating Design in the Melting-Sintering Method For High-Performance Mg3 (Bi, Sb)2 Thermoelectric Devices

N-type Mg3 (Bi, Sb)2 -based thermoelectric (TE) alloys show great promise for solid-state power generation and refrigeration, owing to their excellent figure-of-merit (ZT) and using cheap Mg. However, their rigorous preparation conditions and poor thermal stability limit their large-scale applications. Here, this work develops an Mg compensating strategy to realize n-type Mg3 (Bi, Sb)2 by a facile melting-sintering approach. "2D roadmaps" of TE parameters versus sintering temperature and time are plotted to understand the Mg-vacancy-formation and Mg-diffusion mechanisms. Under this guidance, high weight mobility of 347 cm2  V-1  s-1 and power factor of 34 µW cm-1  K-2 can be obtained for Mg3.05 Bi1.99 Te0.01 , and a peak ZT≈1.55 at 723 K and average ZT≈1.25 within 323-723 K can be obtained for Mg3.05 (Sb0.75 Bi0.25 )1.99 Te0.01 . Moreover, this Mg compensating strategy can also improve the interfacial connecting and thermal stability of corresponding Mg3 (Bi, Sb)2 /Fe TE legs. As a consequence, this work fabricates an 8-pair Mg3 Sb2 -GeTe-based power-generation device reaching an energy conversion efficiency of ≈5.0% at a temperature difference of 439 K, and a one-pair Mg3 Sb2 -Bi2 Te3 -based cooling device reaching -10.7 °C at the cold side. This work paves a facile way to obtain Mg3 Sb2 -based TE devices at low cost and also provides a guide to optimize the off-stoichiometric defects in other TE materials.

Molecular Design Concept for Enhancement Charge Carrier Mobility in OFETs: A Review

In the last two decades, organic field-effect transistors (OFETs) have garnered increasing attention from the scientific and industrial communities. The performance of OFETs can be evaluated based on three factors: the charge transport mobility (μ), threshold voltage (Vth), and current on/off ratio (Ion/off). To enhance μ, numerous studies have concentrated on optimizing charge transport within the semiconductor layer. These efforts include: (i) extending π-conjugation, enhancing molecular planarity, and optimizing donor-acceptor structures to improve charge transport within individual molecules; and (ii) promoting strong aggregation, achieving well-ordered structures, and reducing molecular distances to enhance charge transport between molecules. In order to obtain a high charge transport mobility, the charge injection from the electrodes into the semiconductor layer is also important. Since a suitable frontier molecular orbitals' level could align with the work function of the electrodes, in turn forming an Ohmic contact at the interface. OFETs are classified into p-type (hole transport), n-type (electron transport), and ambipolar-type (both hole and electron transport) based on their charge transport characteristics. As of now, the majority of reported conjugated materials are of the p-type semiconductor category, with research on n-type or ambipolar conjugated materials lagging significantly behind. This review introduces the molecular design concept for enhancing charge carrier mobility, addressing both within the semiconductor layer and charge injection aspects. Additionally, the process of designing or converting the semiconductor type is summarized. Lastly, this review discusses potential trends in evolution and challenges and provides an outlook; the ultimate objective is to outline a theoretical framework for designing high-performance organic semiconductors that can advance the development of OFET applications.

The Synthesis and Thermoelectric Properties of the n-Type Solid Solution Bi2-xSbxTe3 (x < 1)

Commercial Peltier cooling devices and thermoelectric generators mostly use bismuth telluride-based materials, specifically its alloys with Sb2Te3 for the p-type legs and its alloys with Bi2Se3 for the n-type legs. If the p-type materials perform with zT well above the unity around room temperature, the n-type counterpart is lacking efficiency in this temperature range, and has the disadvantage of containing selenium. Indeed, despite the fact that selenium is not environmentally benign and that its handling requires precautions, the use of selenium does not facilitate the optimization of thermoelectric performance at or around room temperature, as the presence of selenium results in a larger band gap. In this study, we investigate the feasibility of a selenium-free n-type (Bi, Sb)2Te3 using a simple two-step process: mechanical alloying synthesis followed by spark plasma sintering. All the members of the solid solution Bi2-xSbxTe3 with x < 1 are n-type materials, with zTs between 0.35 and 0.6. The zT is maximized at lower temperatures with an increasing Sb content, which is proof that the band gap is reduced accordingly. We also show here that an edge-free sintering process considerably improves thermoelectric performance.

Anthradithiophene (ADT)-Based Polymerized Non-Fullerene Acceptors for All-Polymer Solar Cells

Realizing efficient all-polymer solar cell (APSC) acceptors typically involves increased building block synthetic complexity, hence potentially unscalable syntheses and/or prohibitive costs. Here we report the synthesis, characterization, and implementation in APSCs of three new polymer acceptors P1-P3 using a scalable donor fragment, bis(2-octyldodecyl)anthra[1,2-b : 5,6-b']dithiophene-4,10-dicarboxylate (ADT) co-polymerized with the high-efficiency acceptor units, NDI, Y6, and IDIC. All three copolymers have comparable photophysics to known polymers; however, APSCs fabricated by blending P1, P2 and P3 with donor polymers PM5 and PM6 exhibit modest power conversion efficiencies (PCEs), with the champion P2-based APSC achieving PCE=5.64 %. Detailed morphological and microstructural analysis by AFM and GIWAXS reveal a non-optimal APSC active layer morphology, which suppresses charge transport. Despite the modest efficiencies, these APSCs demonstrate the feasibility of using ADT as a scalable and inexpensive electron rich/donor building block for APSCs.

Isomerically Pure Oxindole-Terminated Quinoids for n-Type Organic Thin-Film Transistors Enabled by the Chlorination of Quinoidal Core

Quinoidal compounds have great potential utility as high-performance organic semiconducting materials because of their rigid planar structures and extended π-conjugation. However, the existence of E and Z isomers adversely affects the charge-transport properties of quinoidal compounds. In this study, three isomerically pure oxindole-terminated quinoids were developed by introducing chlorine atoms in the quinoidal core. The synthesized quinoids were confirmed to have a Z,Z configuration by means of ¹ H NMR spectroscopy, density functional theory calculations, and single-crystal X-ray analysis. Importantly, the strategy of chlorination allowed to maintain low-lying frontier molecular orbital energy levels and ensure favorable intermolecular packing. Consequently, all three quinoidal compounds showed n-type transport characteristics in organic thin-film transistors, with electron mobilities up to 0.35 cm²  V^-1  s^-1 , which is the highest value reported to date for oxindole-terminated quinoids. Our study can provide new guidelines for the design of isomerically pure quinoids with high electron mobilities.

Synergistic Approach Toward a Reproducible High zT in n-Type and p-Type Superionic Thermoelectric Ag2Te

Recently, superionic thermoelectrics have attracted enormous attention due to their ultralow thermal conductivity and high figure-of-merit (zT). However, their high zT is generally obtained deep inside the superionic phase, e.g., near 1000 K in Cu₂X (X: chalcogen atom) family despite a relatively low superionic transition temperature of ∼400 K. At such high temperatures, the liquid-like flow of the metal ions results in material's degradation. Here, we present thermoelectric properties of superionic Ag₂Te synthesized by various methods. The sintered Ag₂Te samples are shown to exhibit an unpredictable behavior with respect to the sign of thermopower (S) in the superionic phase and the magnitude of electrical conductivity (σ). We overcome this issue using an all-room-temperature fabrication technique leading to an excellent reproducibility from one sample to another. To improve the zT of Ag₂Te beyond the phonon-liquid electron-crystal limit (∼0.64 at 575 K in the ingot samples), we adopted a heirarchical nanostructuring technique, which effectively suppressed the thermal conductivity, leading to a significant improvement in the zT values for both n-type and p-type samples. We obtained zT of 1.2 in the n-type and 0.64 in the p-type Ag₂Te at 570 K. These values supersede the zT of any Ag₂Te previously reported. At 570 K, for our ball-milled/cold-pressed samples, the critical current density for metal-ion migration exceeds 15 A cm^-2, which further confirms that Ag₂Te is a promising thermoelectric material. Our results are supported by first-principles density functional theory calculations of the electronic and thermal properties.

Ultra-Narrow Phosphorene Nanoribbons Produced by Facile Electrochemical Process

Phosphorene nanoribbons (PNRs) have inspired strong research interests to explore their exciting properties that are associated with the unique two-dimensional (2D) structure of phosphorene as well as the additional quantum confinement of the nanoribbon morphology, providing new materials strategy for electronic and optoelectronic applications. Despite several important properties of PNRs, the production of these structures with narrow widths is still a great challenge. Here, a facile and straightforward approach to synthesize PNRs via an electrochemical process that utilize the anisotropic Na+ diffusion barrier in black phosphorus (BP) along the [001] zigzag direction against the [100] armchair direction, is reported. The produced PNRs display widths of good uniformity (10.3 ± 3.8 nm) observed by high-resolution transmission electron microscopy, and the suppressed B2g vibrational mode from Raman spectroscopy results. More interestingly, when used in field-effect transistors, synthesized bundles exhibit the n-type behavior, which is dramatically different from bulk BP flakes which are p-type. This work provides insights into a new synthesis approach of PNRs with confined widths, paving the way toward the development of phosphorene and other highly anisotropic nanoribbon materials for high-quality electronic applications.

High expression of N-type calcium channel indicates a favorable prognosis in gliomas

For the diagnosis and prognosis of glioma, the development of prognostic biomarkers is critical. The N-type calcium channel, whose predominant subunit is encoded by calcium voltage-gated channel subunit alpha1 B (CACNA1B), is mostly found in the nervous system and is closely associated with neurosensory functions. However, the link between the expression of CACNA1B and glioma remains unknown. We used ONCOMINE to explore the differences in CACNA1B expression among different cancers. We then conducted survival analysis and COX analysis using TCGA_LGG and TCGA_GBM datasets, which were divided into CACNA1Bhigh and CACNA1Blow based on the median. We examined the differences in other favorable prognostic markers or clinical characteristics between CACNA1Bhigh and CACNA1Blow using t tests. Differentially expressed genes were identified, and KEGG pathway enrichment was performed. We compared the expression of methyltransferases and analyzed the differentially methylated regions. Immunohistochemistry results were retrieved from the Human Protein Atlas database for validation purposes. CACNA1B was expressed at lower levels in gliomas, and, for the first time, we found that high expression of CACNA1B in gliomas predicts a good prognosis. Other favorable prognostic markers, such as isocitrate dehydrogenase mutation, 1p/19q codeletion, and O6-methylguanine-DNA methyltransferase promoter methylation, were increased in tandem with high expression of CACNA1B. Differentially expressed genes were enriched in multiple pathways related to cancer progression and aberrant epigenetic alterations were significantly associated with CACNA1B. High expression of N-type calcium channels indicates a favorable prognosis for gliomas. This study provides a better understanding of the link between gliomas and N-type calcium channels and may offer guidance for the future treatment of gliomas.

Tunable Carrier Type of a Semiconducting 2D Metal-Organic Framework Cu3(HHTP)2

In this work, a switch from n-type to p-type conductivity in electrodeposited Cu3(2,3,6,7,10,11-hexahydroxytriphenylene)2 [Cu3(HHTP2)] has been observed, which is most likely due to oxygen molecular doping. The synthesis of electrically conductive 2D metal-organic frameworks (MOFs) has been achieved through the introduction of highly conjugated organic linkers coordinated to their constituent metal-ion centers. However, the porous structure and unsaturated metal sites in MOFs make them susceptible to ambient adsorbates, which can affect their charge transport properties. This phenomenon has been experimentally investigated by GIXRD, Hall effect and Seebeck measurements, and X-ray photoelectron spectroscopy.

High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al₂O₃ capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm²V⁻¹s⁻¹, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.

From n- to p-Type Material: Effect of Metal Ion on Charge Transport in Metal-Organic Materials

An intriguing new class of two-dimensional (2D) materials based on metal-organic frameworks (MOFs) has recently been developed that displays electrical conductivity, a rarity among these nanoporous materials. The emergence of conducting MOFs raises questions about their fundamental electronic properties, but few studies exist in this regard. Here, we present an integrated theory and experimental investigation to probe the effects of metal substitution on the charge transport properties of M-HITP, where M = Ni or Pt and HITP = 2,3,6,7,10,11-hexaiminotriphenylene. The results show that the identity of the M-HITP majority charge carrier can be changed without intentional introduction of electronically active dopants. We observe that the selection of the metal ion substantially affects charge transport. Using the known structure, Ni-HITP, we synthesized a new amorphous material, a-Pt-HITP, which although amorphous is nevertheless found to be porous upon desolvation. Importantly, this new material exhibits p-type charge transport behavior, unlike Ni-HITP, which displays n-type charge transport. These results demonstrate that both p- and n-type materials can be achieved within the same MOF topology through appropriate choice of the metal ion.

Flexible n-Type Abundant Chalcopyrite/PEDOT:PSS/Graphene Hybrid Film for Thermoelectric Device Utilizing Low-Grade Heat

Combining inorganic thermoelectric (TE) materials with conductive polymers is one promising strategy to develop flexible thermoelectric (FTE) films and devices. As most inorganic materials tried up until now in FTE composites are composed of scarce or toxic elements, and n-type FTE materials are particularly desired, we combined the abundant, inexpensive, nontoxic Zn-doped chalcopyrite (Cu_1-xZn_xFeS₂, x = 0.01, 0.02, 0.03) with a flexible electrical network constituted by poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) and graphene for n-type FTE films. Hybrid films from the custom design of binary Cu_1-xZn_xFeS₂/PEDOT:PSS to the optimum design of ternary Cu_0.98Zn_0.02FeS₂/PEDOT:PSS/graphene are characterized. Compared with the binary film, a 4-fold enhancement in electrical conductivity was observed in the ternary film, leading to a maximum power factor of ∼ 23.7 μW m^-1 K^-2. The optimum ternary film could preserve >80% of the electrical conductivity after 2000 bending cycles, exhibiting an exceptional flexibility due to the network constructed by PEDOT:PSS and graphene. A five-leg thermoelectric prototype made of optimum films generated a voltage of 4.8 mV with a ΔT of 13 °C. Such an evolution of an inexpensive chalcopyrite-based hybrid film with outstanding flexibility exhibits the potential for cost-sensitive FTE applications.

Acetone Sensing and Catalytic Conversion by Pd-Loaded SnO2

Noble metal additives are widely used to improve the performance of metal oxide gas sensors, most prominently with palladium on tin oxide. Here, we photodeposit different quantities of Pd (0–3 mol%) onto nanostructured SnO₂ and determine their effect on sensing acetone, a critical tracer of lipolysis by breath analysis. We focus on understanding the effect of operating temperature on acetone sensing performance (sensitivity and response/recovery times) and its relationship to catalytic oxidation of acetone through a packed bed of such Pd-loaded SnO₂. The addition of Pd can either boost or deteriorate the sensing performance, depending on its loading and operating temperature. The sensor performance is optimal at Pd loadings of less than 0.2 mol% and operating temperatures of 200–262.5 °C, where acetone conversion is around 50%.

Impact of Fluoroalkylation on the n-Type Charge Transport of Two Naphthodithiophene Diimide Derivatives

In this work, we investigate two recently synthesized naphthodithiophene diimide (NDTI) derivatives featuring promising n-type charge transport properties. We analyze the charge transport pathways and model charge mobility with the non-adiabatic hopping mechanism using the Marcus-Levich-Jortner rate constant formulation, highlighting the role of fluoroalkylated substitution in α (α-NDTI) and at the imide nitrogen (N-NDTI) position. In contrast with the experimental results, similar charge mobilities are computed for the two derivatives. However, while α-NDTI displays remarkably anisotropic mobilities with an almost one-dimensional directionality, N-NDTI sustains a more isotropic charge percolation pattern. We propose that the strong anisotropic charge transport character of α-NDTI is responsible for the modest measured charge mobility. In addition, when the role of thermally induced transfer integral fluctuations is investigated, the computed electron-phonon couplings for intermolecular sliding modes indicate that dynamic disorder effects are also more detrimental for the charge transport of α-NDTI than N-NDTI. The lower observed mobility of α-NDTI is therefore rationalized in terms of a prominent anisotropic character of the charge percolation pathways, with the additional contribution of dynamic disorder effects.

Oxygen-Rich Polymer Polyethylene Glycol-Functionalized Single-Walled Carbon Nanotubes Toward Air-Stable n-Type Thermoelectric Materials

It is crucial for thermoelectric (TE) devices to obtain both p-type and n-type materials and control charge carrier density. However, n-type thermoelectric materials are quite deficient and have lower thermoelectric properties. We report one oxygen-rich polymer named polyethylene glycol (PEG) for converting p-type single-walled carbon nanotubes (SWCNTs) to air-stable n-type thermoelectric materials. When pristine SWCNTs were doped with 2 mg·mL^-1 PEG in an ethanol solution, the optimal Seebeck coefficient of PEG/SWCNT composites reached -50.8 μV·K^-1. The result of ultraviolet photoelectron spectroscopy demonstrated that the lone pair of oxygen atoms in the PEG chain has electron transferability to SWCNTs. According to the hard and soft acid and base theory, sodium hydroxide (NaOH) was further introduced to improve air stability and thermoelectric performance of doped SWCNTs. As a result, PEG/NaOH/SWCNT composites achieved the highest power factor of 173.8 μW·m^-1·K^-2 at 300 K. Meanwhile, their final changes in electrical conductivity and the Seebeck coefficient are less than 8% in the investigation of air stability over two months. Inspired by this finding, we fabricated the TE generator composed of the pristine p-type SWCNTs and n-type PEG/NaOH/SWCNT composites. The maximum output power of this robust TE device reached 5.3 μW at a temperature gradient of 76 K, which is superior to many reported TE devices. Moreover, the experimental procedure is attractive as a sustainable process for materials preparation. Our study has indicated that the oxygen-rich polymer-functionalized SWCNTs have huge potential for developing air-stable n-type carbon-based thermoelectric materials.

Novel Hybrid p- and n-Type Organic Thermoelectric Materials Based on Mussel-Inspired Polydopamine

Mussel-inspired polydopamine (PDA) can serve as building blocks and interfaces in designing functional materials. Here, the use of PDA as an interlayer between polyaniline (PANi) and multidimensional carbon materials, such as graphene quantum dots (GQD), multiwalled carbon nanotubes (MWCNT), and graphene nanosheets (GNS), to improve the thermoelectric performance of p-type polymer-based materials has been reported. The introduction of PDA promotes the carrier mobility of GQD/PDA/PANi, CNT/PDA/PANi, and GNS/PDA/PANi ternary composites due to the superior adhesive property of PDA. An optimal conductivity of 4.98 × 10⁴ S m^-1 and a power factor of 92.17 μW m^-1 K^-2 at 363 K are achieved in GNS/PDA/PANi, which are much higher than the values of GNS/PDA and GNS/PANi. More surprisingly, despite the fact that GQD/PDA, CNT/PDA, and GNS/PDA binary composites show p-type properties, the pyrolysis treatment of GQD/PDA, CNT/PDA, and GNS/PDA at 800 °C results in a gain in both the electrical conductivity and negative Seebeck coefficient of c-GQD/PDA, c-CNT/PDA, and c-GNS/PDA. The c-CNT/PDA composites possess the highest Seebeck value of -30.2 μV K^-1 and a maximum power factor value of 35.57 μW m^-1 K^-2. Finally, a flexible thermoelectric generator with 24 thermoelectric units composed of GNS/PDA/PANi and c-CNT/PDA is demonstrated, which gives an output voltage of 52.8 mV at a temperature difference of 60 °C.

Achieving High Thermoelectric Performance of n-Type Bi2Te2.79Se0.21 Sintered Materials by Hot-Stacked Deformation

Bismuth telluride has been the only commercial thermoelectric candidate, but the n-type sintered material lags well behind the p-type one in the zT value, which severely limits the further development of thermoelectrics. Here, we report a promising technique named hot-stacked deformation to effectively improve the thermoelectric properties of n-type Bi₂Te_2.79Se_0.21 + 0.067 wt % BiCl₃ materials based on zone-melting ingots. It is found that a high grain alignment is maintained during the plastic deformation and the carrier concentration is properly optimized owing to the donor-like effect, leading to an enhanced power factor. Moreover, the lattice thermal conductivity is obviously suppressed due to the emerged phonon scattering centers of dense grain boundaries and dislocations. These effects synergistically yield a maximum zT value of 1.38 and an average zT_ave of 1.18 between 300 and 500 K in the hot-stacked deformed sample, which is approximately 42% higher than those of the zone-melting ingots.

Flexible Thermoelectric Films Based on Bi2Te3 Nanosheets and Carbon Nanotube Network with High n-Type Performance

Flexible thermoelectric materials and devices have gained wide attention due to their capability to stably and directly convert body heat or industrial waste heat into electric energy. Many research and synthetic methods of flexible high-performance p-type thermoelectric materials have made great progress. However, their counterpart flexible n-type organic thermoelectric materials are seldom studied due to the complex synthesis of conductive polymer and poor stability of n-type materials. In this work, bismuth tellurium (Bi₂Te₃) nanosheets are in situ grown on single-walled carbon nanotubes (SWCNTs) assisted by poly(vinylpyrrolidone) (PVP). A series of flexible SWCNTs@Bi₂Te₃ composite films on poly(vinylidene fluoride) (PVDF) membranes are obtained by vacuum-assisted filtration. The high electrical conductivity of 253.9 S/cm, and a corresponding power factor (PF) of 57.8 μW/m·K² is obtained at 386 K for SWCNTs@Bi₂Te₃-0.8 film. Moreover, high electrical conductivity retention of 90% can be maintained after a 300-cycle bending test and no obvious attenuation can be detected after being stored in an Ar atmosphere for 9 months, which exhibits good flexibility and excellent stability of the SWCNTs@Bi₂Te₃ composite films. This work shows a convenient method to fabricate n-type and flexible thermoelectric composite film and further promotes the practical application of n-type flexible thermoelectric materials.

Molecular Doping of a Naphthalene Diimide-Bithiophene Copolymer and SWCNTs for n-Type Thermoelectric Composites

Molecular doping is a powerful tool to tune the thermoelectric (TE) properties of solution-processed semiconductors. In this work, we prepared a binary composite and effectively doped both of its constituents, that is, naphthalene diimide-bithiophene copolymers (PNDI2OD-T2) and single-walled carbon nanotubes (SWCNTs), by a 1H-benzimidazole derivative (N-DMBI). The doped composites show an n-type character and an in-plane TE figure of merit (ZT), exceeding the values obtained with the doped polymers. The use of SWCNTs consistently results in a higher σ with a maximum value above 10² S/cm, resulting in the highest power factor of 18.1 μW/mK² for an SWCNT loading of 45.5 wt %. Furthermore, an SWCNT content up to 9 wt % does not compromise the low thermal conductivity of the polymer matrices, leading to a ZT value of 0.0045. The n-type composites show good solution processability and relatively stable Seebeck coefficients upon air exposure for 8 months.

ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells

In the quest for the replacement of indium tin oxide (ITO), Ti-doped zinc oxide (TZO) films have been synthesized by atomic layer deposition (ALD) and applied as an n-type transparent conductive oxide (TCO). TZO thin films were obtained from titanium (IV) i-propoxide (TTIP), diethyl zinc, and water by introducing TiO₂ growth cycle in a ZnO matrix. Process parameters such as the order of precursor introduction, the cycle ratio, and the film thickness were optimized. The as-deposited films were analyzed for their surface morphology, elemental stoichiometry, optoelectronic properties, and crystallinity using a variety of characterization techniques. The growth mechanism was investigated for the first time by in situ quartz crystal microbalance measurements. It evidenced different insertion modes of titanium depending on the precursor introduction, as well as the etching of Zn-Et surface groups by TTIP. Resistivity as low as 1.2 × 10^-3 Ω cm and transmittance >80% in the visible range were obtained for 72-nm-thick films. Finally, the first application of ALD-TZO as TCO was reported. TZO films were successfully implemented as top electrodes in silicon nanowire solar cells. The unique properties of TZO combined with conformal coverage realized by the ALD technique make it possible for the cell to show almost flat external quantum efficiency (EQE) response, surpassing the bell-like EQE curve seen in devices with a sputtered ITO top electrode.

Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors

Anthracene-based semiconductors have attracted great interest due to their molecular planarity, ambient and thermal stability, tunable frontier molecular orbitals and strong intermolecular interactions that can lead to good device field-effect transistor performance. In this study, we report the synthesis of six anthracene derivatives which were di-substituted at the 2,6-positions, their optical, electrochemical and thermal properties, and their single crystal structures. It was found that 2,6-functionalization with various fluorinated phenyl derivatives led to negligible changes in the optical behaviour while influencing the electrochemical properties. Furthermore, the choice of fluorinated phenyl moiety had noticeable effects on melting point and thermal stability (ΔTm < 55 °C and ΔTd < 65 °C). Bottom-gate top-contact (BGTC) organic thin transistors (OTFTs) were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. The addition of fluorine groups on the phenyl groups led to a transition from p-type behaviour to n-type behaviour in BGBC OTFTs.

Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport

Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe₂ , WSe₂ , and MoS₂ are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe₂ , WSe₂ , and MoS₂ have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

Ultrahigh Power Factor and Electron Mobility in n-Type Bi2Te3-x%Cu Stabilized under Excess Te Condition

The thermoelectric (TE) community has mainly focused on improving the figure of merit (ZT) of materials. However, the output power of TE devices directly depends on the power factor (PF) rather than ZT. Effective strategies of enhancing PF have been elusive for Bi₂Te₃-based compounds, which are efficient thermoelectrics operating near ambient temperature. Here, we report ultrahigh carrier mobility of ∼467 cm² V^-1 s^-1 and power factor of ∼45 μW cm^-1 K^-2 in a new n-type Bi₂Te₃ system with nominal composition Cu_xBi₂Te_3.17 (x = 0.02, 0.04, and 0.06). It is obtained by reacting Bi₂Te₃ with surplus Cu and Te and subsequently pressing powder products by spark plasma sintering (SPS). The SPS discharges excess Te but stabilizes the high extent of Cu in the structure, giving unique SPS Cu_xBi₂Te_3.17 samples. The analyzed composition is close to "Cu_xBi₂Te₃". Their charge transport properties are highly unusual. Hall carrier concentration and mobility simultaneously increase with the higher mole fraction of Cu contrary to the typical carrier scattering mechanism. As a consequence, the electrical conductivity is considerably enhanced with Cu incorporation. The Seebeck coefficient is nearly unchanged by the increasing Cu content in contrast to the general understanding of inverse relationship between electrical conductivity and Seebeck coefficient. These effects synergistically lead to a record high power factor among all polycrystalline n-type Bi₂Te₃-based materials.

Dithiazolylthienothiophene Bisimide: A Novel Electron-Deficient Building Unit for N-Type Semiconducting Polymers

N-type (electron-transporting) semiconducting polymers are essential materials for the development of truly plastic electronic devices. Here, we synthesized for the first time dithiazolylthienothiophene bisimide (TzBI), as a new family for imide-based electron-deficient π-conjugated systems, and semiconducting polymers by incorporating TzBI into the π-conjugated backbone as the building unit. The TzBI-based polymers are found to have deep frontier molecular orbital energy levels and wide optical bandgaps compared to the dithienylthienothiophene bisimide (TBI) counterpart. It is also found that TzBI can promote the π-π intermolecular interactions of the polymer backbones relative to TBI most probably because the thiazole ring, which replaced the thiophene ring, at the end of the framework gives a more coplanar backbone. In fact, TzBI-based polymers function as the n-type semiconducting material in both organic field-effect transistor (OFET) and organic photovoltaic (OPV) devices. Notably, one of the TzBI-based polymers provides a power conversion efficiency of 3.3% in the all-polymer OPV device, which could be high for a low-molecular-weight polymer (<10 kDa). Interestingly, while many of the n-type semiconducting polymers utilized in OPVs have narrow bandgaps, the TzBI-based polymers have wide bandgaps. This is highly beneficial for complementing the visible to near-IR light absorption range when blended with p-type narrow bandgap polymers that have been widely developed in the last decade. The results demonstrate great promise and possibility of TzBI as the building unit for n-type semiconducting polymers.

Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

One of the main issues with micron-sized intracortical neural interfaces (INIs) is their long-term reliability, with one major factor stemming from the material failure caused by the heterogeneous integration of multiple materials used to realize the implant. Single crystalline cubic silicon carbide (3C-SiC) is a semiconductor material that has been long recognized for its mechanical robustness and chemical inertness. It has the benefit of demonstrated biocompatibility, which makes it a promising candidate for chronically-stable, implantable INIs. Here, we report on the fabrication and initial electrochemical characterization of a nearly monolithic, Michigan-style 3C-SiC microelectrode array (MEA) probe. The probe consists of a single 5 mm-long shank with 16 electrode sites. An ~8 µm-thick p-type 3C-SiC epilayer was grown on a silicon-on-insulator (SOI) wafer, which was followed by a ~2 µm-thick epilayer of heavily n-type (n⁺) 3C-SiC in order to form conductive traces and the electrode sites. Diodes formed between the p and n⁺ layers provided substrate isolation between the channels. A thin layer of amorphous silicon carbide (a-SiC) was deposited via plasma-enhanced chemical vapor deposition (PECVD) to insulate the surface of the probe from the external environment. Forming the probes on a SOI wafer supported the ease of probe removal from the handle wafer by simple immersion in HF, thus aiding in the manufacturability of the probes. Free-standing probes and planar single-ended test microelectrodes were fabricated from the same 3C-SiC epiwafers. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were performed on test microelectrodes with an area of 491 µm² in phosphate buffered saline (PBS) solution. The measurements showed an impedance magnitude of 165 kΩ ± 14.7 kΩ (mean ± standard deviation) at 1 kHz, anodic charge storage capacity (CSC) of 15.4 ± 1.46 mC/cm², and a cathodic CSC of 15.2 ± 1.03 mC/cm². Current-voltage tests were conducted to characterize the p-n diode, n-p-n junction isolation, and leakage currents. The turn-on voltage was determined to be on the order of ~1.4 V and the leakage current was less than 8 μA_rms. This all-SiC neural probe realizes nearly monolithic integration of device components to provide a likely neurocompatible INI that should mitigate long-term reliability issues associated with chronic implantation.

High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures

Despite extensive studies on emerging thermoelectric material SnSe, its n-type form is largely underdeveloped mainly due to the difficulty in stabilizing the carrier concentration at the optimal level. Here, we dually introduce Cl and PbSe to induce n-type conduction in intrinsic p-type SnSe. PbSe alloying enhances the power factor and suppresses lattice thermal conductivity at the same time, giving a highest thermoelectric figure of merit ZT of 1.2 at 823 K for n-type polycrystalline SnSe materials. The best composition is Sn_0.90Pb_0.15Se_0.95Cl_0.05. Samples prepared by the solid-state reaction show a high maximum ZT ( ZT_max) ∼1.1 and ∼0.8 parallel and perpendicular to the press direction of spark plasma sintering, respectively. Remarkably, post-ball milling and annealing processes considerably reduce structural anisotropy, thereby leading to a ZT_max ∼1.2 along both the directions. Hence, the direction giving a ZT_max is controllable for this system using the specialized preparation methods for specimens. Spherical aberration-corrected scanning transmission electron microscopic analyses reveal the presence of heavily dense edge dislocations and strain fields, not observed in the p-type counterparts, which contribute to decreasing lattice thermal conductivity. Our theoretical calculations employing a Callaway-Debye model support the experimental results for thermal transport and microscopic structures.

Novel Molecular Doping Mechanism for n-Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells

Molecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n-type doping of oxide semiconductors. Herein, successful n-type doping of SnO₂ is demonstrated by a simple, air-robust, and cost-effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P⁺ O^- σ-bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi-photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO₂ , which enlarges the built-in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO₂ /perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%.

Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5-yLayIn2.2Sb₆

Due to the tunable electrical transport properties and lower thermal conductivity, Zintl phase compounds have been considered as a promising candidate for thermoelectric applications. Most Sb-based Zintl compounds exhibit essentially p-type conduction as result of the cation vacancy. Herein, n-type Zintl phases Eu_5−yLa_yIn_2.2Sb₆ has been successfully synthesized via controlling the vacancy defect combined with intentional electron doping. Excess of In would occupy the vacancy while La doping enables the electron to be the major carrier at the measured temperate range, realizing the n-type conduction for Eu_5−yLa_yIn_2.2Sb₆ (y ≥ 0.04). Meanwhile, the thermal conductivity of Eu_5−yLa_yIn_2.2Sb₆ reduces from 0.90 W/mK to 0.72 W/mK at 583 K derived from the La doping-induced disorder. The maximum thermoelectric figure of merit zT = 0.13 was obtained. This work firstly realizes the n-type conduction in Eu₅In₂Sb₆, which sheds light on the strategy to synthesize n-type Zintl thermoelectric materials and promotes the practical applications of Zintl thermoelectric devices.

Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion

An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm²/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

Flexible, Low-Voltage, and n-Type Infrared Organic Phototransistors with Enhanced Photosensitivity via Interface Trapping Effect

Flexible and low-voltage near-infrared organic phototransistors (NIR OPTs) were prepared with a low-band gap donor-acceptor conjugated polymer as the semiconductor layer and n-octadecyl phosphonic acid modified anodic alumina (AlO _x/ODPA) as the insulating layer. The phototransistors exhibit the typical n-type transistor characteristics at a voltage below 5 V. The photosensitivity of phototransistors can be enhanced by regulating the packing densities of the ODPA self-assembled monolayers and forming different trap states. The enhanced OPTs exhibit good photosensitivity to 808-980 nm NIR with the photocurrent/dark current ratio and photoresponsivity as high as 5 × 10³ and 20 mA W^-1, respectively, benefiting from the charge-trapping effect at the AlO _x/ODPA interface. The OPTs also present a fast optical switching speed of 20/30 ms and an excellent mechanical flexibility. The outstanding performance of the NIR OPTs indicates that the development of wearable electronics is, indeed, possible.

Efficient n-Doping and Hole Blocking in Single-Walled Carbon Nanotube Transistors with 1,2,4,5-Tetrakis(tetramethylguanidino)ben-zene

Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enables the fabrication of purely n-type SWCNT field-effect transistors (FETs). We apply ttmgb to networks of monochiral, semiconducting (6,5) SWCNTs that show intrinsic ambipolar behavior in bottom-contact/top-gate FETs and obtain unipolar n-type transport with 3-5-fold enhancement of electron mobilities (approximately 10 cm² V^-1 s^-1), while completely suppressing hole currents, even at high drain voltages. These n-type FETs show excellent on/off current ratios of up to 10⁸, steep subthreshold swings (80-100 mV/dec), and almost no hysteresis. Their excellent device characteristics stem from the reduction of the work function of the gold electrodes via contact doping, blocking of hole injection by ttmgb²⁺ on the electrode surface, and removal of residual water from the SWCNT network by ttmgb protonation. The ttmgb-treated SWCNT FETs also display excellent environmental stability under bias stress in ambient conditions. Complementary inverters based on n- and p-doped SWCNT FETs exhibit rail-to-rail operation with high gain and low power dissipation. The simple and stable ttmgb molecule thus serves as an example for the larger class of guanidino-functionalized aromatic compounds as promising electron donors for high-performance thin film electronics.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Polymer-Assisted Single Crystal Engineering of Organic Semiconductors To Alter Electron Transport

A new crystal phase of a naphthalenediimide derivative (α-DPNDI) has been prepared via a facial polymer-assisted method. The stacking pattern of DPNDI can be tailored from the known one-dimensional (1D) ribbon (β phase) to a novel two-dimensional (2D) plate (α phase) through the assistance from polymers. We believe that the presence of polymers during crystal growth is likely to weaken the direct π-π interactions and favor side-to-side C-H-π contacts. Furthermore, β phase architecture shows electron mobility higher than that of the α phase in the single-crystal-based OFET. Theoretical calculations not only confirm that β-DPNDI has an electron transport performance better than that of the α phase but also indicate that the α phase crystal displays 2D transport while the β phase possesses 1D transport. Our results clearly suggest that polymer-assisted crystal engineering should be a promising approach to alter the electronic properties of organic semiconductors.

Exploring High-Performance n-Type Thermoelectric Composites Using Amino-Substituted Rylene Dimides and Carbon Nanotubes

Taking advantage of the high electrical conductivity of a single-walled carbon nanotube (SWCNT) and the large Seebeck coefficient of rylene diimide, a convenient strategy is proposed to achieve high-performance n-type thermoelectric (TE) composites containing a SWCNT and amino-substituted perylene diimide (PDINE) or naphthalene diimide (NDINE). The obtained n-type composites display greatly enhanced TE performance with maximum power factors of 112 ± 8 (PDINE/SWCNT) and 135 ± 14 (NDINE/SWCNT) μW m^-1 K^-2. A short doping time of 0.5 h can ensure high TE performance. The corresponding TE module consisting of five p-n junctions reaches a large output power of 3.3 μW under a 50 °C temperature gradient. In addition, the n-type composites exhibit high air stability and excellent thermal stability. This design strategy benefits the future fabricating of high-performance n-type TE materials and devices.

Understanding Electron Transport in Disk-Shaped Triphenylene-Tris(naphthaleneimidazole)s through Structural Modification and Theoretical Investigation

Disk-shaped molecules with large aromatic π-surfaces are a class of organic semiconductors in which the charge-carrier transport properties could be greatly facilitated by preferred intermolecular stacking of the π-surfaces. The optical and electronic properties are not only determined by the core aromatic structure of these disk-shaped molecules but are also strongly dependent on the side chains, which directly impact the molecular self-assembly behavior in condensed phases. Triphenylene-tris(naphthaleneimidazole) (TP-TNI) is a recently reported n-type semiconductor featuring a large π-core and branched side chains, with an electron-transporting mobility reaching 10^-4 cm² V^-1 s^-1. To further improve material performance, a detailed study is needed to understand the dependence of carrier transport properties on both the core electronic structure and side chain. Here, we present the detailed synthesis and characterization of a TP-TNI derivative bearing linear side chains, which has demonstrated a field-effect electron-transport mobility of up to 1.3 × 10^-3 cm² V^-1 s^-1. The more than 1 order improvement in electron-transport properties over the branched side chain homologue can be correlated to ordered twisted packing in the thin film, as revealed by in situ variable temperature grazing incidence wide-angle X-ray scattering studies. In-depth theoretical understanding of the frontier orbitals, reorganization energies, and charge-transfer integrals of TP-TNI molecules has provided further insight into the relationship between the molecular stacking geometry and charge-transport properties.

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Polyethylenimine (PEI) As an Effective Dopant To Conveniently Convert Ambipolar and p-Type Polymers into Unipolar n-Type Polymers

In this study, we added a small amount of polyethylenimine (PEI) into several ambipolar and p-type polymer semiconductors and used these blends as channel materials in organic thin film transistors (OTFTs). It is found that PEI can effectively suppress hole transport characteristics while maintaining or promoting the electron transport performance. Unipolar n-channel OTFTs with electron-only transport behavior is achieved for all the polymer semiconductors chosen with 2-10 wt % PEI. The electron-rich nitrogen atoms in PEI are thought to fill the electron traps, raise the Fermi level and function as trapping sites for holes, leading to promotion of electron transport and suppression of hole transport. This work demonstrates a convenient general approach to transforming ambipolar and p-type polymer semiconductors into unipolar n-type polymer semiconductors that are useful for printed logic circuits and many other applications.

Solar cells based on inks of n-type colloidal quantum dots

New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.

Controlled morphology and optical properties of n-type porous silicon: effect of magnetic field and electrode-assisted LEF

Fabrication of photoluminescent n-type porous silicon (nPS), using electrode-assisted lateral electric field accompanied with a perpendicular magnetic field, is reported. The results have been compared with the porous structures fabricated by means of conventional anodization and electrode-assisted lateral electric field without magnetic field. The lateral electric field (LEF) applied across the silicon substrate leads to the formation of structural gradient in terms of density, dimension, and depth of the etched pores. Apart from the pore shape tunability, the simultaneous application of LEF and magnetic field (MF) contributes to a reduction of the dimension of the pores and promotes relatively more defined pore tips as well as a decreased side-branching in the pore walls of the macroporous structure. Additionally, when using magnetic field-assisted etching, within a certain range of LEF, an enhancement of the photoluminescence (PL) response was obtained.

Azadipyrromethene-based Zn(II) complexes as nonplanar conjugated electron acceptors for organic photovoltaics

The effectiveness of new a electron acceptor for organic solar cells is demonstrated. The acceptor is a homoleptic zinc(II) complex of 2,6-diphenylethynyl-1,3,7,9-tetraphenylazadipyrromethene. The high power-conversion efficiency obtained is attributed to the acceptor's 3D structure, which prevents crystallization and promotes a favourable nanoscale morphology, its high Voc , and its ability to contribute to light harvesting at 600-800 nm.

Power factor enhancement in solution-processed organic n-type thermoelectrics through molecular design

A new class of high-performance n-type organic thermoelectric materials, self-doping perylene diimide derivatives with modified side chains, is reported. These materials achieve the highest n-type thermoelectric performance of solution-processed organic materials reported to date, with power factors as high as 1.4 μW/mK(2). These results demonstrate that molecular design is a promising strategy for enhancing organic thermoelectric performance.

Solubility-limited extrinsic n-type doping of a high electron mobility polymer for thermoelectric applications

The thermoelectric properties of a highperformance electron-conducting polymer, (P(NDIOD-T2), extrinsically doped with dihydro-1H-benzoimidazol-2-yl (NDBI) derivatives, are reported. The highest thermoelectric power factor that has been reported for a solution-processed n-type polymer is achieved; and it is concluded that engineering polymerdopant miscibility is essential for the development of organic thermoelectrics.

25th anniversary article: recent advances in n-type and ambipolar organic field-effect transistors

The advantages of organic field-effect transistors, such as low cost, mechanical flexibility and large-area fabrication, make them potentially useful for electronic applications such as flexible switching backplanes for video displays, radio frequency identifications and so on. A large amount of molecules were designed and synthesized for electron transporting (n-type) and ambipolar organic semiconductors with improved performance and stability. In this review, we focus on the advances in performance and molecular design of n-type and ambipolar semiconductors reported in the past few years.

First principles study on the electronic properties of Zn(64)Sb(64-x)Te(x) solid solution (x = 0, 2, 3, 4)

The electronic properties of Te doped-ZnSb systems are investigated by first-principles calculations. We focus on the Zn₆₄Sb_64−xTe_x systems (x = 0, 2, 3, 4), which respond to the 0, 1.56at%, 2.34at% and 3.12at% of Te doping concentration. We confirm that the amount of Te doping will change the conductivity type of ZnSb. In the cases of x = 2 and 3, we find that the Te element in ZnSb introduces some bands originating from Te s and p orbits and a donor energy level in the bottom of the conduction band, which induce the n-type conductivity of ZnSb. From these findings for the electronic structure and the conductivity mechanism, we predict that Te doping amounts such as 1.56at% and 2.34at% can be considered as suitable candidates for use as donor dopant.

Inhibition of Ca2+ channel current by mu- and kappa-opioid receptors coexpressed in Xenopus oocytes: desensitization dependence on Ca2+ channel alpha 1 subunits

1. Desensitization of mu- and kappa-opioid receptor-mediated inhibition of voltage-dependent Ca2+ channels was studied in a Xenopus oocyte translation system. 2. In the oocytes coexpressing kappa-opioid receptors with N- or Q-type Ca2+ channel alpha 1 and beta subunits, the kappa-agonist, U50488H, inhibited both neuronal Ca2+ channel current responses in a pertussis toxin-sensitive manner and the inhibition was reduced by prolonged agonist exposure. 3. More than 10 min was required to halve the inhibition of Q-type channels by the kappa-agonist. However, the half-life for the inhibition of N-type channels was only 6 +/- 1 min. In addition, in the oocytes coexpressing mu-opioid receptors with N-type or Q-type channels, the uncoupling rate of the mu-receptor-mediated inhibition of N-channels was also faster than that of Q-type channels. 4. In the oocytes coexpressing both mu- and kappa-receptors with N-type channels, stimulation of either receptor resulted in a cross-desensitization of the subsequent response to the other agonist. Treatment of oocytes with either H-8 (100 microM), staurosporine (400 nM), okadaic acid (200 nM), phorbol myristate acetate (5 nM) or forskolin (50 microM) plus phosphodiesterase inhibitor did not affect either the desensitization or the agonist-evoked inhibition of Ca2+ channels. 5. These results suggest that the rate of rapid desensitization is dependent on the alpha 1 subtype of the neuronal Ca2+ channel, and that a common phosphorylation-independent mechanism underlies the heterologous desensitization between opioid receptor subtypes.