Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

AgInS2-Embedded Photocatalytic Membrane: Insights into the Excited State and Electron Transfer Dynamics

Photocatalytic reactions at semiconductor nanocrystal surfaces are useful for synthesizing value-added chemicals using sunlight. Semiconductor nanocrystals dispersed in a rigid framework, such as polymer film, can mitigate issues such as aggregation, product separation, and other challenges that are usually encountered in suspensions or slurries. Using a cation exchange technique, we successfully embedded AgInS2 nanoparticles into a Nafion matrix, termed AgInS2-Nafion. This was achieved through a galvanic exchange between In and Ag in In2S3 present within the Nafion film, enabling an adjustable Ag:In ratio for optimized photophysical properties. As in the case of colloidal suspension, the AgInS2 particles embedded in Nafion exhibit a long absorption tail, a broad emission band with a large Stokes shift, and emission lifetimes extending into the microseconds that are characteristic of donor-acceptor pairs, DAP. Remediation of surface states with the treatment of 3-mercaptopropionic acid resulted in significant enhancement in the emission yield. Charge carrier generation through bandgap excitation as well as activation of DAP states which reside within the bandgap is probed through transient absorption spectroscopy. The photocatalytic activity of AgInS2-Nafion was probed by using thionine as an electron acceptor. The electron transfer rate constant from excited AgInS2 to thionine as observed from transient absorption spectroscopy was determined to be ∼6.3 × 1010 s-1. The design of a photoactive membrane offers new ways to carry out photocatalytic processes with greater selectivity.

One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping

I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.

Post-functionalization of sulfur quantum dots and their aggregation-dependent antibacterial activity

Sulfur quantum dots (SQDs) have emerged as an intriguing class of luminescent nanomaterial due to their exceptional physiochemical and optoelectronic properties. However, their biomedical application is still in its infancy due to the limited scope of their surface functionalization. Herein, we explored the surface functionalization of SQDs through different thiol ligands with tuneable functionality and tested their antibacterial efficacy. Notably, very high antibacterial activity of functionalized SQDs (10-25 ng ml-1) was noted, which is 105 times higher compared to that of nonfunctionalized SQDs. Moreover, a rare phenomenon of the reverse trend of antibacterial activity through surface modification was observed, with increasing surface hydrophobicity of various nanomaterials as the antibacterial activity increased. However, we also noted that as the surface hydrophobicity increased, the SQDs tended to exhibit a propensity for aggregation, which consequently decreased their antibacterial efficacy. This identical pattern was also evident in in vivo assessments. Overall, this study illuminates the importance of surface modifications of SQDs and the role of surface hydrophobicity in the development of antibacterial agents.

Heterogeneity induced dual luminescence properties of AgInS2 and AgInS2–ZnS alloyed nanocrystals

In the PL spectra of heterogeneous nanocrystals (In₂S₃–AgInS₂ and In₂S₃–AgInS₂–ZnS) two distinctly different peaks could be found at 430 and 710–515 nm.

Multinary copper-based chalcogenide nanocrystal systems from the perspective of device applications

Multinary chalcogenide semiconductor nanocrystals are a unique class of materials as they offer flexibility in composition, structure, and morphology for controlled band gap and optical properties. They offer a vast selection of materials for energy conversion, storage, and harvesting applications. Among the multinary chalcogenides, Cu-based compounds are the most attractive in terms of sustainability as many of them consist of earth-abundant elements. There has been immense progress in the field of Cu-based chalcogenides for device applications in the recent years. This paper reviews the state of the art synthetic strategies and application of multinary Cu-chalcogenide nanocrystals in photovoltaics, photocatalysis, light emitting diodes, supercapacitors, and luminescent solar concentrators. This includes the synthesis of ternary, quaternary, and quinary Cu-chalcogenide nanocrystals. The review also highlights some emerging experimental and computational characterization approaches for multinary Cu-chalcogenide semiconductor nanocrystals. It discusses the use of different multinary Cu-chalcogenide compounds, achievements in device performance, and the recent progress made with multinary Cu-chalcogenide nanocrystals in various energy conversion and energy storage devices. The review concludes with an outlook on some emerging and future device applications for multinary Cu-chalcogenides, such as scalable luminescent solar concentrators and wearable biomedical electronics.

Ultra-broadband near-infrared emission CuInS2/ZnS quantum dots with high power efficiency and stability for the theranostic applications of mini light-emitting diodes

Broadband near-infrared CuInS₂/ZnS quantum with up to 94.8% quantum yield was synthesized with fast precursor decomposition. The better power efficiency and stability of CuInS₂/ZnS mini-LED were performed with penetration tests and vein imaging.

Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs

(ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dot light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing, reasonable electrical conductivity, optical transmittance, and a high work function. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp³/sp² hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance of 10.33 Ω^-2, a resistivity of 1.34 × 10^-4 Ω cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, the performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than the performance of QDLEDs with different ta-C thicknesses. It is concluded that ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.

Exploring Electronic and Excitonic Processes toward Efficient Deep-Red CuInS2/ZnS Quantum-Dot Light-Emitting Diodes

The electroluminescence mechanisms in the Cd-free CuInS₂/ZnS quantum dot-based light-emitting diodes (QLEDs) are systematically investigated through transient electroluminescence measurements. The results demonstrate that the characteristics of hole transporting layers (HTLs) determine the QLEDs to be activated by the direct charge injection or the energy transfer. Moreover, both the energy level alignment between the HTL and quantum dot and the carrier mobility properties of the HTLs are critical factors to affect the device performance. By choosing the suitable HTL, such as 4,4'-bis(9-carbazolyl)-2,2'-biphenyl, highly efficient deep-red (emission peak at ∼650 nm) CuInS₂/ZnS QLEDs based on the single HTL can be obtained with a peak current efficiency and luminance of ∼2.0 cd/A and nearby 3000 cd/m², respectively.

Optical Properties, Synthesis, and Potential Applications of Cu-Based Ternary or Quaternary Anisotropic Quantum Dots, Polytypic Nanocrystals, and Core/Shell Heterostructures

This review summaries the optical properties, recent progress in synthesis, and a range of applications of luminescent Cu-based ternary or quaternary quantum dots (QDs). We first present the unique optical properties of the Cu-based multicomponent QDs, regarding their emission mechanism, high photoluminescent quantum yields (PLQYs), size-dependent bandgap, composition-dependent bandgap, broad emission range, large Stokes’ shift, and long photoluminescent (PL) lifetimes. Huge progress has taken place in this area over the past years, via detailed experimenting and modelling, giving a much more complete understanding of these nanomaterials and enabling the means to control and therefore take full advantage of their important properties. We then fully explore the techniques to prepare the various types of Cu-based ternary or quaternary QDs (including anisotropic nanocrystals (NCs), polytypic NCs, and spherical, nanorod and tetrapod core/shell heterostructures) are introduced in subsequent sections. To date, various strategies have been employed to understand and control the QDs distinct and new morphologies, with the recent development of Cu-based nanorod and tetrapod structure synthesis highlighted. Next, we summarize a series of applications of these luminescent Cu-based anisotropic and core/shell heterostructures, covering luminescent solar concentrators (LSCs), bioimaging and light emitting diodes (LEDs). Finally, we provide perspectives on the overall current status, challenges, and future directions in this field. The confluence of advances in the synthesis, properties, and applications of these Cu-based QDs presents an important opportunity to a wide-range of fields and this piece gives the reader the knowledge to grasp these exciting developments.

Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers

We developed a 1.0 nm thick aluminum oxide (Al₂O₃) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs). The Al₂O₃ interlayer was deposited by an atomic layer deposition (ALD) process that allows precise thickness control. The Al₂O₃ interlayer lowers the mobility of electrons and reduces Auger recombination which causes the degradation of device performance. A maximum current efficiency of 51.2 cd A⁻¹ and an external quantum efficiency (EQE) of 12.2% were achieved in the inverted QLEDs with the Al₂O₃ interlayer. The Al₂O₃ interlayer increased device efficiency by 1.1 times, increased device lifetime by 6 times, and contributed to reducing efficiency roll-off from 38.6% to 19.6% at a current density up to 150 mA cm⁻². The improvement of device performance by the Al₂O₃ interlayer is attributed to the reduction of electron injection and exciton quenching induced by zinc oxide (ZnO) nanoparticles (NPs). This work demonstrates that the Al₂O₃ interlayer is a promising solution for charge control in QLEDs and that the ALD process is a reliable approach for atomic scale thickness control for QLEDs.

We developed a 1.0 nm thick aluminum oxide (Al₂O₃) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs).

Simultaneous Improvement of Efficiency and Lifetime of Quantum Dot Light-Emitting Diodes with a Bilayer Hole Injection Layer Consisting of PEDOT:PSS and Solution-Processed WO3

Even though chemically stable metal oxides (MOs), as substitutes for poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), have been successfully adopted for improving device stability in solution-processed quantum dot light-emitting diodes (QLEDs), the efficiencies of QLEDs are at a relatively low level. In this work, a novel architecture of QLEDs has been introduced, in which inorganic/organic bilayer hole injection layers (HILs) were delicately designed by inserting an amorphous WO₃ interlayer between PEDOT:PSS and the indium tin oxide anode. As a result, the efficiency and operational lifetime of QLEDs were improved simultaneously. The results show that the novel architecture QLEDs relative to conventional PEDOT:PSS-based QLEDs have an enhanced external quantum efficiency by a factor of 50%, increasing from 8.31 to 12.47%, meanwhile exhibit a relatively long operational lifetime (12 551 h) and high maximum brightness (>40 000 cd m^-2) resulting from a better pathway for hole injection with staircase energy-level alignment of the HILs and reduction of surface roughness. Our results demonstrate that the novel architecture QLEDs using bilayer MO/PEDOT:PSS HILs can achieve long operational lifetime without sacrificing efficiency.