Record Low Thermal Conductivity of Polycrystalline MoS2 Films: Tuning the Thermal Conductivity by Grain Orientation

Light-driven dynamical tuning of the thermal conductivity in ferroelectrics

Dynamical tuning of the thermal conductivity in crystals, κ, is critical for thermal management applications, as well as for energy harvesting and the development of novel phononic devices able to perform logic operations with phonons. Such a desired κ control can be achieved in functional materials that experience large structural and phonon variations as a result of field-induced phase transformations. However, this approach is only practical within reduced temperature intervals containing zero-bias phase transition points, since otherwise the necessary driving fields become excessively large and the materials' performances are detrimentally affected. Here, based on first-principles calculations, we propose an alternative strategy for dynamically tuning κ that is operative over broad temperature conditions and realizable in a wide class of materials. By shining light on the archetypal perovskite oxide KNbO3, we predict that ultrafast and reversible ferroelectric-to-paraelectric phase transitions are induced, yielding large and anisotropic κ variations (up to ≈30% at T = 300 K). These light-induced thermal transport shifts can take place at temperatures spanning several hundreds of kelvin and are essentially the result of anharmonic effects affecting the phonon lifetimes.

High-Strength Polycrystalline Covalent Organic Framework with Abnormal Thermal Transport Insensitive to Grain Boundary

Grain boundaries (GBs) in two-dimensional (2D) covalent organic frameworks (COFs) unavoidably form during the fabrication process, playing pivotal roles in the physical characteristics of COFs. Herein, molecular dynamics simulations were employed to elucidate the fracture failure and thermal transport mechanisms of polycrystalline COFs (p-COFs). The results revealed that the tilt angle of GBs significantly influences out-of-plane wrinkles and residual stress in monolayer p-COFs. The tensile strength of p-COFs can be enhanced and weakened with the tilt angle, which exhibits an inverse relationship with the defect density. The crack always originates from weaker heptagon rings during uniaxial tension. Notably, the thermal transport in p-COFs is insensitive to the GBs due to the variation of minor polymer chain length at defects, which is abnormal for other 2D crystalline materials. This study contributes insights into the impact of GBs in p-COFs and offers theoretical guidance for structural design and practical applications of advanced COFs.

MoS2 phononic crystals for advanced thermal management

Effective thermal management of electronic devices encounters substantial challenges owing to the notable power densities involved. Here, we propose layered MoS2 phononic crystals (PnCs) that can effectively reduce thermal conductivity (κ) with relatively small disruption of electrical conductivity (σ), offering a potential thermal management solution for nanoelectronics. These layered PnCs exhibit remarkable efficiency in reducing κ, surpassing that of Si and SiC PnCs with similar periodicity by ~100-fold. Specifically, in suspended MoS2 PnCs, we measure an exceptionally low κ down to 0.1 watts per meter kelvin, below the amorphous limit while preserving the crystalline structure. These findings are supported by molecular dynamics simulations that account for the film thickness, porosity, and temperature. We demonstrate the approach efficiency by fabricating suspended heat-routing structures that effectively confine and guide heat flow in prespecified directions. This study underpins the immense potential of layered materials as directional heat spreaders, thermal insulators, and active components for thermoelectric devices.

The intrinsically low lattice thermal conductivity of monolayer T-Au6X2 (X = S, Se and Te)

Thermal conductivity (κ, which consists of electronic thermal conductivity κe and lattice thermal conductivity κl), as an essential parameter in thermal management applications, is a critical physical quantity to measure the heat transfer performance of materials. To seek low-κ materials for heat-related applications, such as thermoelectric materials and thermal barrier coatings. In this study, based on a complex cluster design, we report a new class of two-dimensional (2D) transition metal dichalcogenides (TMDs): T-Au6X2 (X = S, Se, and Te) with record ultralow κl values. At room temperature, the κl values of T-Au6S2, T-Au6Se2, and T-Au6Te2 are 0.25 (0.23), 0.30 (0.21), and 0.12 (0.10) W m-1 K-1 along the x-axis (y-axis) direction, respectively, exhibiting good thermal insulation. The ultralow κl originates from strong phonon softening and suppression, especially for the phonon with frequency 0-1 THz. In addition, T-Au6Te2 holds the lowest group velocity and phonon relaxation time among the three T-Au6X2 monolayers. Our study provides an alternative approach for achieving ultralow κl through complex cluster replacement. Meanwhile, this new class of TMDs is expected to shine in thermal insulation and thermoelectricity due to their ultralow κl values.

Control of Charge Carrier Relaxation at the Au/WSe2 Interface by Ti and TiO2 Adhesion Layers: Ab Initio Quantum Dynamics

Phonon-mediated charge relaxation plays a vital role in controlling thermal transport across an interface for efficient functioning of two-dimensional (2D) nanostructured devices. Using a combination of nonadiabatic molecular dynamics with real-time time-dependent density functional theory, we demonstrate a strong influence of adhesion layers at the Au/WSe₂ interface on nonequilibrium charge relaxation, rationalizing recent ultrafast time-resolved experiments. Ti oxide layers (TiO_x) create a barrier to the interaction between Au and WSe₂ and extend hot carrier lifetimes, creating benefits for photovoltaic and photocatalytic applications. In contrast, a metallic Ti layer accelerates the energy flow, as needed for efficient heat dissipation in electronic devices. The interaction of metallic Ti with WSe₂ causes W-Se bond scissoring and pins the Fermi level. The Ti adhesion layer enhances the electron-phonon coupling due to an increased density of states and the light mass of the Ti atom. The conclusions are robust to presence of typical point defects. The atomic-scale ab initio analysis of carrier relaxation at the interfaces advances our knowledge in fabricating nanodevices with optimized electronic and thermal properties.

Grain boundary and misorientation angle-dependent thermal transport in single-layer MoS2

Grain boundaries (GBs) are inevitable defects in large-area MoS₂ samples but they play a key role in their properties, however, the influence of grain misorientation on thermal transport has largely remained unknown. Here, the critical role of misorientation angle in thermal transport characteristics across 5|7 polar dislocation-dominated GBs in monolayer MoS₂ is explored using nonequilibrium molecular dynamics simulations. Results show that thermal transport characteristics of defective GBs are greatly dictated by the misorientation angle, with "U"-shaped thermal conductance as misorientation angle varying from around 5.06-52.26°, as well as by GB energy, 5|7 dislocation type and the grain size. Such unique thermal transport across GBs is primarily attributed to rising phonon-boundary softening and scattering with increasing dislocation density at GBs or GB energy, as well as an increase in localized phonon modes. The study establishes the fundamental relationship between GB and the thermal properties of single-layer MoS₂ and highlights the vital role of GBs in designing efficient thermoelectric and thermal management transition metal dichalcogenides.

Induced 2H-Phase Formation and Low Thermal Conductivity by Reactive Spark Plasma Sintering of 1T-Phase Pristine and Co-Doped MoS2 Nanosheets

Pristine and Co-doped MoS₂ nanosheets, containing a dominant 1T phase, have been densified by spark plasma sintering (SPS) to produce a nanostructured arrangement. The structural analysis by X-ray powder diffraction revealed that the reactive sintering process transforms the 1T-MoS₂ nanosheets into their stable 2H form despite a significantly reduced sintering temperature and time testifying to the fast kinetics of phase change. Together with the phase conversion, the SPS process promoted a strong texturing of the nanosheets, which drives additional scattering processes and alters the electronic and thermal transport properties. In the pristine sample, it produced one of the lowest thermal conductivities ever reported on MoS₂ with a minimal value of 0.66 W/m·K at room temperature. The effect of Co substitution in the final sintered samples is not significant, compared to the pristine MoS₂ sample, except for a non-negligible improvement of the electrical conductivity by a factor of 100 in the high-Co content (6% by mass) sample.

Thermal Conductivity of Large-Area Polycrystalline MoSe2 Films Grown by Chemical Vapor Deposition

It is of great importance to understand the thermal properties of MoSe₂ films for electronic and optoelectronic applications. In this work, large-area polycrystalline MoSe₂ films are prepared using a low-cost, controllable, large-scale, and repeatable chemical vapor deposition method, which facilitates direct device fabrication. Raman spectra and X-ray diffraction patterns indicate a hexagonal (2H) crystal structure of the MoSe₂ film. Ellipsometric spectra analysis indicates that the optical band gap of the MoSe₂ film is estimated to be ∼1.23 eV. From the analysis of the temperature-dependent and laser-power-dependent Raman spectra, the thermal conductivity of the suspended MoSe₂ films is found to be ∼28.48 W/(m·K) at room temperature. The results can provide useful guidance for an effective thermal management of large-area polycrystalline MoSe₂-based electronic and optoelectronic devices.

Functional Grain Boundaries in Two-Dimensional Transition-Metal Dichalcogenides

ConspectusTwo-dimensional (2D) transition-metal dichalcogenides (TMDs) are a class of promising low-dimensional materials with a variety of emergent properties which are attractive for next-generation electronic and optical devices; such properties include tunable band gaps, high electron mobilities, high exciton binding energies, excellent thermal stability and flexibility. During the synthesis process of these materials, especially chemical vapor deposition, defects such as grain boundaries (GBs) inevitably exist. GBs are the interfaces between differently oriented grains and are line defects in 2D crystals. While GBs can degrade the overall quality of 2D materials and adversely affect some of their electrical and mechanical properties, recent results show that GBs give rise to or enhance a wide range of unique electrical, mechanical, and chemical properties of the GBs in 2D TMDs. The effects of GBs on 2D material properties are complex and diverse, providing exciting opportunities to realize new functionalities by manipulating the local structure and properties. Notably, these effects are strongly related to atom types, dislocation cores, crystal misorientation at GBs, and both in- and out-of-plane deformation. The exploitation of GBs for novel applications requires a deepened understanding of synthesis, postprocessing, defect structures, GB properties, and GB structure-property relationships in 2D materials.In this Account, we first introduce a detailed classification of GBs in 2D TMDs based on atomic structure, symmetry, and the local coordination of both transition metals and chalcogenide atoms. The GB types in typical MoS₂ (high-symmetry hexagonal structure) and ReS₂ (low-symmetry monoclinic structure) are taken as examples. Next, we describe the properties of GBs in 2D TMDs, including thermodynamic and kinetic, mechanical, thermal, electrical, magnetic, chemical, and electrocatalysis properties as well as several application areas where these may be exploited. Here we provide systematic atomic-level and electronic level explanations of these properties to clarify their dependences on GB structures. Applications that extend from these properties, including functional electronics, chemical sensors, and electrocatalysts, are also described. Finally, we provide several perspectives and suggest promising opportunities for exploiting the novel properties of GBs in 2D TMDs. We expect that this Account will further stimulate the fundamental research of GBs and boost the wide application of multifunctional devices.

Ink-jet printing and drop-casting deposition of 2H-phase SnSe2and WSe2nanoflake assemblies for thermoelectric applications

The development of simple, scalable, and cost-effective methods to prepare Van der Waals materials for thermoelectric applications is a timely research field, whose potential and possibilities are still largely unexplored. In this work, we present a systematic study of ink-jet printing and drop-casting deposition of 2H phase SnSe₂and WSe₂nanoflake assemblies, obtained by liquid phase exfoliation, and their characterization in terms of electronic and thermoelectric properties. The choice of optimal annealing temperature and time is crucial for preserving phase purity and stoichiometry and for removing dry residues of ink solvents at inter-flake boundaries, while maximizing the sintering of nanoflakes. An additional pressing is beneficial to improve nanoflake orientation and packing, thus enhancing electric conductivity. In nanoflake assemblies deposited by drop casting and pressed at 1 GPa, we obtained thermoelectric power factors at room temperature up to 2.2 × 10^-4mW m^-1K^-2for SnSe₂and up to 3.0 × 10^-4mW m^-1K^-2for WSe₂.

Electron beam lithography for direct patterning of MoS2 on PDMS substrates

Precise patterning of 2D materials into micro- and nanostructures presents a considerable challenge and many efforts are dedicated to the development of processes alternative to the standard lithography. In this work we show a fabrication technique based on direct electron beam lithography (EBL) on MoS₂ on polydimethylsiloxane (PDMS) substrates. This easy and fast method takes advantage of the interaction of the electron beam with the PDMS, which at high enough doses leads to cross-linking and shrinking of the polymer. At the same time, the adhesion of MoS₂ to PDMS is enhanced in the exposed regions. The EBL acceleration voltages and doses are optimized in order to fabricate well-defined microstructures, which can be subsequently transferred to either a flexible or a rigid substrate, to obtain the negative of the exposed image. The reported procedure greatly simplifies the fabrication process and reduces the number of steps compared to standard lithography and etching. As no additional polymer, such as polymethyl methacrylate (PMMA) or photoresists, are used during the whole process the resulting samples are free of residues.

Precise patterning of 2D materials into micro- and nanostructures presents a considerable challenge and many efforts are dedicated to the development of processes alternative to the standard lithography.

Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review

Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. We summarize the latest device-relevant methodologies of phonon engineering in semiconductor nanostructures and 2D materials, including graphene and transition metal dichalcogenides. Then, we review recent advances in thermal characterization techniques, and discuss their main challenges and limitations.

Revealing the Grain Boundary Formation Mechanism and Kinetics during Polycrystalline MoS2 Growth

Controllable synthesis of MoS₂ with desired grain morphology via chemical vapor deposition (CVD) or physical vapor deposition (PVD) remains a challenge. Hence, it is important to understand polycrystalline growth of MoS₂ and further provide guidelines for its CVD/PVD growth. Here, we formulate a kinetic Monte Carlo (kMC) model aiming at predicting the grain boundary (GB) formation in the CVD/PVD growth of polycrystalline MoS₂. In the kMC model, the grain growth is via kink nucleation and propagation, whose energetic parameters and initial nucleus details are either from first-principles calculations or from experiments. Using the kMC model, we perform extensive simulations to predict the GB formation by using two, three, four, and five initial nuclei and compare the simulation results with previous experimental results. The obtained GB morphologies are in an excellent agreement with those experimental results. These agreements suggest that the proposed kMC model can correctly capture the mechanism and kinetics of GB formation. In particular, we reveal that the formation of smooth/rough GB is dictated by the two growth vectors for the kink propagation at the two associated grain edges, which is validated by our high-resolution scanning transmission electron microscopy images for PVD growth of MoS₂ grains. Besides, we have made predictions beyond reproducing experimental observations, including the growth with artificially designed nuclei, the morphology transformation by tuning the Mo and S sources, and the formation of high-quality single-crystalline monolayer MoS₂ by using single-crystalline substrates with vicinal steps. Our kMC model may serve as a powerful predictive tool for the CVD/PVD growth of monolayer MoS₂ with desired GB configurations.

Thermal properties of thin films made from MoS2 nanoflakes and probed via statistical optothermal Raman method

A deep understanding of the thermal properties of 2D materials is crucial to their implementation in electronic and optoelectronic devices. In this study, we investigated the macroscopic in-plane thermal conductivity (κ) and thermal interface conductance (g) of large-area (mm2) thin film made from MoS2 nanoflakes via liquid exfoliation and deposited on Si/SiO2 substrate. We found κ and g to be 1.5 W/mK and 0.23 MW/m2K, respectively. These values are much lower than those of single flakes. This difference shows the effects of interconnections between individual flakes on macroscopic thin film parameters. The properties of a Gaussian laser beam and statistical optothermal Raman mapping were used to obtain sample parameters and significantly improve measurement accuracy. This work demonstrates how to address crucial stability issues in light-sensitive materials and can be used to understand heat management in MoS2 and other 2D flake-based thin films.

Phonon-Grain-Boundary-Interaction-Mediated Thermal Transport in Two-Dimensional Polycrystalline MoS2

Although dislocations and grain boundaries (GBs) are ubiquitous in large-scale MoS₂ samples, their interaction with phonons, which plays an important role in determining the lattice thermal conductivity of polycrystalline MoS₂, remains elusive. Here, we perform a systematic study of the heat transport in two-dimensional polycrystalline MoS₂ by both molecular dynamics simulation and atomic Green's function method. Our results indicate that the thermal boundary conductance of GBs of MoS₂ is in the range from 6.4 × 10⁸ to 35.3 × 10⁸ W m^-2 K^-1, which is closely correlated with the overlap between the vibrational density of states of GBs and those of the pristine lattice, as well as the GB energy. It is found that the GBs strongly scatter the phonons with frequency larger than 2 THz, accompanied by a pronounced phonon localization effect and significantly reduced phonon group velocities. Furthermore, by comparing the results from realistic polycrystalline MoS₂ to those from different theoretical models, we observe that the Casimir model is broken down and detailed phonon dynamics at a specific GB should be taken into account to accurately describe the phonon transport in polycrystalline materials. Our findings will provide useful guidelines for designing efficient thermoelectric and thermal management materials based on phonon-GB interaction.

Thermal transport across grain boundaries in polycrystalline silicene: A multiscale modeling

During the fabrication process of large scale silicene, through common chemical vapor deposition (CVD) technique, polycrystalline films are quite likely to be produced, and the existence of Kapitza thermal resistance along grain boundaries could result in substantial changes of their thermal properties. In the present study, the thermal transport along polycrystalline silicene was evaluated by performing a multiscale method. Non-equilibrium molecular dynamics simulations (NEMD) was carried out to assess the interfacial thermal resistance of various constructed grain boundaries in silicene. The effects of tensile strain and the mean temperature on the interfacial thermal resistance were also examined. In the following stage, the effective thermal conductivity of polycrystalline silicene was investigated considering the effects of grain size and tensile strain. Our results indicate that the average values of Kapitza conductance at grain boundaries at room temperature were estimated to be nearly 2.56 × 109 W/m2 K and 2.46 × 109 W/m2 K through utilizing Tersoff and Stillinger-Weber interatomic potentials respectively. Also, in spite of the mean temperature, whose increment does not change Kapitza resistance, the interfacial thermal resistance could be controlled by applying strain. Furthermore, it was found that by tuning the grain size of polycrystalline silicene, its thermal conductivity could be modulated up to one order of magnitude.

Heat Transfer at the Interface of Graphene Nanoribbons with Different Relative Orientations and Gaps

Because of their high thermal conductivity, graphene nanoribbons (GNRs) can be employed as fillers to enhance the thermal transfer properties of composite materials, such as polymer-based ones. However, when the filler loading is higher than the geometric percolation threshold, the interfacial thermal resistance between adjacent GNRs may significantly limit the overall thermal transfer through a network of fillers. In this article, reverse non-equilibrium molecular dynamics is used to investigate the impact of the relative orientation (i.e., horizontal and vertical overlap, interplanar spacing and angular displacement) of couples of GNRs on their interfacial thermal resistance. Based on the simulation results, we propose an empirical correlation between the thermal resistance at the interface of adjacent GNRs and their main geometrical parameters, namely the normalized projected overlap and average interplanar spacing. The reported correlation can be beneficial for speeding up bottom-up approaches to the multiscale analysis of the thermal properties of composite materials, particularly when thermally conductive fillers create percolating pathways.