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Zhang P, Guo J, Zhang L, Tao L, Sui Y, Fu Q, Wang X, Song B. Ultrafast Multifunctional Photodetector Based on the NiAl 2O 4/4H-SiC Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27813-27820. [PMID: 38603540 DOI: 10.1021/acsami.4c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
Solar-blind photodetectors based on wide bandgap semiconductors have recently attracted a lot of interest. Nickel-containing spinel phase oxides, such as NiAl2O4, are stable p-type semiconductors. This paper describes a multifunctional solar-blind photodetector based on a NiAl2O4/4H-SiC heterojunction that utilizes photovoltaic effects. The position sensitivity reaches a value of 1589.7 mV/mm under 405 nm laser illumination, while the relaxation times of vertical photovoltaic (VPV) effect and lateral photovoltaic (LPV) effect under 266 nm laser illumination are only 0.32 and 0.42 μs, respectively. This junction was used to create a space optical communication system with sunlight having little effect on its optoelectronic properties. The ultrafast photovoltaic relaxation time makes NiAl2O4/4H-SiC a promising candidate for self-powered high-performance solar-blind detectors.
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Affiliation(s)
- Pengbo Zhang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Jiarui Guo
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Lingli Zhang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Lingling Tao
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yu Sui
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Qiang Fu
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xianjie Wang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Frontiers Science Center for Matter Behave in Space Environment, Harbin Institute of Technology, Harbin 150001, China
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450046, China
| | - Bo Song
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Frontiers Science Center for Matter Behave in Space Environment, Harbin Institute of Technology, Harbin 150001, China
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450046, China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150001, China
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Nguyen TH, Nguyen T, Foisal ARM, Dinh T, Nguyen HQ, Streed EW, Vu TH, Tanner P, Dau VT, Nguyen NT, Dao DV. Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration. ACS APPLIED MATERIALS & INTERFACES 2021; 13:55329-55338. [PMID: 34752067 DOI: 10.1021/acsami.1c15942] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb. The charge carrier distribution along the heterojunction was investigated by measuring the lateral photovoltage generated when the laser spot scans across the 3C-SiC surface between the two electrodes. The highest lateral photovoltage generated is 130.58 mV, measured in the device with an electrode width ratio of 5 and under 637 nm wavelength and 1000 μW illumination. Interestingly, the lateral photovoltage was generated even under uniform illumination at zero bias, which is unusual for the lateral photovoltage, as it can only be generated when unevenly distributed photogenerated charge carriers exist. In addition, the working mechanism and uncovered behavior of the lateral photovoltaic effect are explained based on the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory. The finding further elaborates the underlying physics of the lateral photovoltaic effect in nano-heterojunctions and explores its potential in developing optoelectronic sensors.
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Affiliation(s)
- Tuan-Hung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
| | - Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
| | - Abu Riduan Md Foisal
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
| | - Toan Dinh
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Toowoomba 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba 4350, Australia
| | - Hong-Quan Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
| | - Erik W Streed
- Institute for Glycomics, Griffith University, Gold Coast 4222, Australia
- Centre for Quantum Dynamics, Griffith University, Brisbane 4111, Australia
| | - Trung-Hieu Vu
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
- School of Engineering and Built Environment, Griffith University, Gold Coast 4222 Australia
| | - Philip Tanner
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
| | - Van Thanh Dau
- School of Engineering and Built Environment, Griffith University, Gold Coast 4222 Australia
- Centre of Catalysis and Clean Energy, Griffith University, Gold Coast 4222, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111, Australia
- School of Engineering and Built Environment, Griffith University, Gold Coast 4222 Australia
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Nguyen T, Dinh T, Phan HP, Pham TA, Dau VT, Nguyen NT, Dao DV. Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications. MATERIALS HORIZONS 2021; 8:2123-2150. [PMID: 34846421 DOI: 10.1039/d1mh00538c] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The piezoresistive effect has been a dominant mechanical sensing principle that has been widely employed in a range of sensing applications. This transducing concept still receives great attention because of the huge demand for developing small, low-cost, and high-performance sensing devices. Many researchers have extensively explored new methods to enhance the piezoresistive effect and to make sensors more and more sensitive. Many interesting phenomena and mechanisms to enhance the sensitivity have been discovered. Numerous review papers on the piezoresistive effect have been published; however, there is no comprehensive review article that thoroughly analyses methods and approaches to enhance the piezoresistive effect. This paper comprehensively reviews and presents all the advanced enhancement methods ranging from the quantum physical effect and new materials to nanoscopic and macroscopic structures, and from conventional rigid to flexible, stretchable and wearable applications. In addition, the paper summarises results recently achieved on applying the above-mentioned innovative sensing enhancement techniques in making extremely sensitive piezoresistive transducers.
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Affiliation(s)
- Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Australia.
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Nguyen T, Dinh T, Dau VT, Md Foisal AR, Guzman P, Nguyen H, Pham TA, Nguyen TK, Phan HP, Nguyen NT, Dao DV. Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:35046-35053. [PMID: 34236166 DOI: 10.1021/acsami.1c05985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED's illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.
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Affiliation(s)
- Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, QLD 4350, Australia
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Toowoomba, QLD 4350, Australia
| | - Toan Dinh
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, QLD 4350, Australia
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Toowoomba, QLD 4350, Australia
| | - Van Thanh Dau
- School of Engineering and Built Environment, Griffith University, Southport, QLD 4215, Australia
| | - Abu Riduan Md Foisal
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Pablo Guzman
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Hung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Tuan Anh Pham
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Tuan-Khoa Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Hoang-Phuong Phan
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
- School of Engineering and Built Environment, Griffith University, Southport, QLD 4215, Australia
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Li X, Gao F, Wang L, Chen S, Deng B, Chen L, Lin CH, Yang W, Wu T. Giant Piezoresistance in B-Doped SiC Nanobelts with a Gauge Factor of -1800. ACS APPLIED MATERIALS & INTERFACES 2020; 12:47848-47853. [PMID: 32990424 DOI: 10.1021/acsami.0c13800] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The giant piezoresistance effect (PRE) of semiconductors as featured by a high gauge factor (GF) is recognized as the prerequisite for realizing optimal pressure sensors with desired high sensitivity. In this work, we report the discovery of giant PRE in SiC nanobelts with a record GF measured using an atomic force microscope. The transverse piezoresistance coefficient along the [111] direction reaches as high as -312.51 × 10-11 pa-1 with a corresponding GF up to -1875.1, which is twice more than the highest value ever reported on SiC nanomaterials. The first-principles calculations reveal that B doping turns the acceptor states in the bandgap into deeper impurity levels, which makes the major contribution to the observed giant piezoresistance behavior. Our result provides new insights on designing pressure sensors based on SiC nanomaterials.
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Affiliation(s)
- Xiaoxiao Li
- Institute of Materials, Ningbo University of Technology, Ningbo City 315211, P.R. China
- School of Material Science and Engineering, Shandong University, Jinan 250061, P.R. China
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology, Ningbo City 315211, P.R. China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology, Ningbo City 315211, P.R. China
| | - Shanliang Chen
- Institute of Materials, Ningbo University of Technology, Ningbo City 315211, P.R. China
| | - Bei Deng
- Southern University of Science and Technology, Shenzhen 14325, P.R. China
| | - Lang Chen
- Southern University of Science and Technology, Shenzhen 14325, P.R. China
| | - Chun-Ho Lin
- School of Material Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo City 315211, P.R. China
| | - Tom Wu
- School of Material Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
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Foisal ARM, Nguyen T, Dinh T, Nguyen TK, Tanner P, Streed EW, Dao DV. 3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40980-40987. [PMID: 31578848 DOI: 10.1021/acsami.9b15855] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-microelectromechanical system, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position-sensitive detector (PSD) based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions. The LPE shows a linear dependence on spot positions, and the sensitivity is found to be as high as 33 mV/mm under an illumination of 2.8 W/cm2 (635 nm). The structure also exhibits a linear dependence of the LPE over a large distance (7 mm) between two electrodes, which is crucial for PSDs as the region with a linear dependence of LPE is only usable for PSDs. The LPE at different spot positions and under different illumination conditions have been investigated and explained based on the energy-band analysis. The temperature dependence of the LPE and position sensitivity is also investigated. Furthermore, the two-dimensional mapping of the lateral photovoltages reveals the potential for utilizing the 3C-SiC/Si heterostructure to detect the laser spot position precisely on a plane.
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Affiliation(s)
| | | | | | | | | | - Erik W Streed
- Centre for Quantum Dynamics , Griffith University , Brisbane , Queensland 4111 , Australia
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Giant piezoresistive effect by optoelectronic coupling in a heterojunction. Nat Commun 2019; 10:4139. [PMID: 31515479 PMCID: PMC6742666 DOI: 10.1038/s41467-019-11965-5] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2019] [Accepted: 08/02/2019] [Indexed: 11/25/2022] Open
Abstract
Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology. Designing reliable and sensitive mechanical sensing technologies based on piezoresistive effect remains a challenge. Here, the authors propose an opto-electro-mechanical coupling strategy to enable giant piezoresistive effect in a highly doped 3C-SiC/Si heterojunction achieving a high GF of 58,000.
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Md Foisal AR, Phan HP, Dinh T, Nguyen TK, Nguyen NT, Dao DV. A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding. RSC Adv 2018; 8:15310-15314. [PMID: 35539501 PMCID: PMC9079978 DOI: 10.1039/c8ra00734a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2018] [Accepted: 04/12/2018] [Indexed: 11/21/2022] Open
Abstract
This paper presents a simple, rapid and cost-effective wire bonding technique for single crystalline silicon carbide (3C–SiC) MEMS devices. Utilizing direct ultrasonic wedge–wedge bonding, we have demonstrated for the first time the direct bonding of aluminum wires onto SiC films for the characterization of electronic devices without the requirement for any metal deposition and etching process. The bonded joints between the Al wires and the SiC surfaces showed a relatively strong adhesion force up to approximately 12.6–14.5 mN and excellent ohmic contact. The bonded wire can withstand high temperatures above 420 K, while maintaining a notable ohmic contact. As a proof of concept, a 3C–SiC strain sensor was demonstrated, where the sensing element was developed based on the piezoresistive effect in SiC and the electrical contact was formed by the proposed direct-bonding technique. The SiC strain sensor possesses high sensitivity to the applied mechanical strains, as well as exceptional repeatability. The work reported here indicates the potential of an extremely simple direct wire bonding method for SiC for MEMS and microelectronic applications. This paper presents a simple, rapid and cost-effective wire bonding technique for single crystalline silicon carbide (3C–SiC) MEMS devices.![]()
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Affiliation(s)
| | | | - Toan Dinh
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | - Tuan-Khoa Nguyen
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | - Nam-Trung Nguyen
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | - Dzung Viet Dao
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
- School of Engineering
- Griffith University
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