Low-Temperature Solution Processed Random Silver Nanowire as a Promising Replacement for Indium Tin Oxide

Metal nanowire-based transparent electrode for flexible and stretchable optoelectronic devices

High-quality transparent electrodes are indispensable components of flexible optoelectronic devices as they guarantee sufficient light transparency and electrical conductivity. Compared to commercial indium tin oxide, metal nanowires are considered ideal candidates as flexible transparent electrodes (FTEs) owing to their superior optoelectronic properties, excellent mechanical flexibility, solution treatability, and higher compatibility with semiconductors. However, certain key challenges associated with material preparation and device fabrication remain for the practical application of metal nanowire-based electrodes. In this review, we discuss state-of-the-art solution-processed metal nanowire-based FTEs and their applications in flexible and stretchable optoelectronic devices. Specifically, the important properties of FTEs and a cost-benefit analysis of existing technologies are introduced, followed by a summary of the synthesis strategy, key properties, and fabrication technologies of the nanowires. Subsequently, we explore the applications of metal-nanowire-based FTEs in different optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. Finally, the current status, future challenges, and emerging strategies in this field are presented.

An ITO-Free Kesterite Solar Cell

Photovoltaic thin film solar cells based on kesterite Cu2 ZnSn(S, Se)4 (CZTSSe) have reached 13.8% sunlight-to-electricity conversion efficiency. However, this efficiency is still far from the Shockley-Queisser radiative limit and is hindered by the significant deficit in open circuit voltage (VOC ). The presence of high-density interface states between the absorber layer and buffer or window layer leads to the recombination of photogenerated carriers, thereby reducing effective carrier collection. To tackle this issue, a new window structure ZnO/AgNW/ZnO/AgNW (ZAZA) comprising layers of ZnO and silver nanowires (AgNWs) is proposed. This structure offers a simple and low-damage processing method, resulting in improved optoelectronic properties and junction quality. The ZAZA-based devices exhibit enhanced VOC due to the higher built-in voltage (Vbi ) and reduced interface recombination compared to the usual indium tin oxide (ITO) based structures. Additionally, improved carrier collection is demonstrated as a result of the shortened collection paths and the more uniform carrier lifetime distribution. These advances enable the fabrication of the first ITO-free CZTSSe solar cells with over 10% efficiency without an anti-reflective coating.

Aluminum-Doped Zinc Oxide Improved by Silver Nanowires for Flexible, Semitransparent and Conductive Electrodes on Textile with High Temperature Stability

In order to facilitate the design freedom for the implementation of textile-integrated electronics, we seek flexible transparent conductive electrodes (TCEs) that can withstand not only the mechanical stresses encountered during use but also the thermal stresses of post-treatment. The transparent conductive oxides (TCO) typically used for this purpose are rigid in comparison to the fibers or textiles they are intended to coat. In this paper, a TCO, specifically aluminum-doped zinc oxide (Al:ZnO), is combined with an underlying layer of silver nanowires (Ag-NW). This combination brings together the advantages of a closed, conductive Al:ZnO layer and a flexible Ag-NW layer, forming a TCE. The result is a transparency of 20-25% (within the 400-800 nm range) and a sheet resistance of 10 Ω/sq that remains almost unchanged, even after post-treatment at 180 °C.

Recent progress in post treatment of silver nanowire electrodes for optoelectronic device applications

Owing to the economical and practical solution synthesis and coating strategies, silver nanowires (AgNWs) have been considered as one of the most suitable alternative materials to replace commercial indium tin oxide (ITO) transparent electrodes. The primitive AgNW electrode cannot meet the requirements for preparing high performance optoelectronic devices due to its high contact resistance, large surface roughness and poor stability. Thus, various post-treatments for AgNW film optimization are needed before its actual applications, such as welding treatment to decrease contact resistance and passivation to increase film stability. This review investigates recent progress on the preparation and optimization of AgNWs. Moreover, some unique fabrication strategies to produce highly oriented AgNW films with unique anisotropic properties have also been carried out with detailed analysis. The representative devices based on the AgNW electrode have been summarized and discussed at the end of this review.

Highly transparent and conductive electrodes enabled by scalable printing-and-sintering of silver nanowires

Silver nanowires (Ag NWs) have good promised for flexible and transparent electronics. However, It remains an open question on how to achieve large-scale printing of Ag NWs with high optical transparency, electrical conductivity, and mechanical durability for practical applications, though extensive research has been conducted for more than a decade. In this work, we propose a possible solution that integrates screen printing of Ag NWs with flash-light sintering (FLS). We demonstrate that the use of low-concentration, screen-printable Ag NW ink enables large-area and high-resolution patterning of Ag NWs. A critical advantage comes from the FLS process that allows low-temperature processing, short operational time, and high output rate-characteristics that fit the scalable manufacturing. Importantly, we show that the resultant Ag NW patterns feature low sheet resistance (1.1-9.2 Ohm sq^-1), high transparency (75.2-92.6%), and thus a remarkable figure of merit comparable to state of the art. These outstanding properties of Ag NW patterns, together with the scalable fabrication method we propose, would facilitate many Ag NW-based applications, such as transparent heaters, stretchable displays, and wearable devices; here, we demonstrate the novel design of flexible and transparent radio frequency 5G antennas.

Analytical modeling of orientation effects in random nanowire networks

Films made from random nanowire arrays are an attractive choice for electronics requiring flexible transparent conductive films. However, thus far there has been no unified theory for predicting their electrical conductivity. In particular, the effects of orientation distribution on network conductivity remain poorly understood. We present a simplified analytical model for random nanowire network electrical conductivity that accurately captures the effects of arbitrary nanowire orientation distributions on conductivity. Our model is an upper bound and converges to the true conductivity as nanowire density grows. The model replaces Monte Carlo sampling with an asymptotically faster computation and in practice can be computed much more quickly than standard computational models. The success of our approximation provides theoretical insight into how nanowire orientation affects electrical conductivity.

High Aspect Ratio and Post-Processing Free Silver Nanowires as Top Electrodes for Inverted-Structured Photodiodes

Silver nanowires (Ag NWs) as transparent conducting electrodes are widely used in many applications such as organic light-emitting diodes (OLEDs), polymer light-emitting diodes, touch screens, solar cells, and transparent heaters. In this work, using a large-scale synthesis, the synthesized Ag NWs had a high aspect ratio of 2820. The Ag NWs could be applied as a top transparent electrode in a device by simple drop-casting without any post-processing steps. The fabricated device comprised 4,4'-bis(carbazol-9-yl)biphenyl/MoO3 organic/inorganic layers which are parts of the inverted structure OLEDs or solar cells. The photodiode characteristics at the UV range were observed in the device. The ability of Ag NWs to replace opaque metals as top electrodes in a device has been demonstrated.