Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films

Sub-unit-cell-segmented ferroelectricity in brownmillerite oxides by phonon decoupling

The ultimate scaling limit in ferroelectric switching has been attracting broad attention in the fields of materials science and nanoelectronics. Despite immense efforts to scale down ferroelectric features, however, only few materials have been shown to exhibit ferroelectricity at the unit-cell level. Here we report a controllable unit-cell-scale domain in brownmillerite oxides consisting of alternating octahedral/tetrahedral layers. By combining atomic-scale imaging and in situ transmission electron microscopy, we directly probed sub-unit-cell-segmented ferroelectricity and investigated their switching characteristics. First-principles calculations confirm that the phonon modes related to oxygen octahedra are decoupled from those of the oxygen tetrahedra in brownmillerite oxides, and such localized oxygen tetrahedral phonons stabilize the sub-unit-cell-segmented ferroelectric domain. The unit-cell-wide ferroelectricity observed in our study could provide opportunities to design high-density memory devices using phonon decoupling.

Layer Resolved Cr Oxidation State Modulation in Epitaxial SrFe0.67Cr0.33O3-δ Thin Films

Understanding how doping influences physicochemical properties of ABO3 perovskite oxides is critical for tailoring their functionalities. In this study, SrFe0.67Cr0.33O3-δ epitaxial thin films were used to examine the effects of Fe and Cr competition on structure and B-site cation oxidation states. The films exhibit a perovskite-like structure near the film/substrate interface, while a brownmillerite-like structure with horizontal oxygen vacancy channels predominates near the surface. Electron energy loss spectroscopy shows Fe remains Fe3+, while Cr varies from ∼Cr3+ (tetrahedral layers) to ∼Cr4+ (octahedral layers) within brownmillerite phases and becomes ∼Cr4.5+ in perovskite-like phases. Theoretical simulations indicate that Cr-O bond arrangements and the way oxygen vacancies interact with Cr and Fe drive Cr charge disproportionation. High-valent Cr cations introduce additional densities of states near the Fermi level, reducing the optical bandgap from ∼2.0 eV (SrFeO2.5) to ∼1.7 eV (SrFe0.67Cr0.33O3-δ). These findings offer insights into B-site cation doping in the perovskite oxide framework.

Electrochemically driven physical properties of solid-state materials: action mechanisms and control schemes

The various physical properties recently induced by solid-state electrochemical reactions must be comprehensively understood, and their mechanisms of action should be elucidated. Reversible changes in conductivity, magnetism, and colour have been achieved by combining the redox reactions of d metal ions and organic materials, as well as the molecular and crystal structures of solids. This review describes the electrochemically driven physical properties of conductors, magnetic materials, and electrochromic materials using various electrochemical devices.

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

Topological phase transition materials have strong coupling between their charge, spin orbitals, and lattice structure, which makes them have good electrical and magnetic properties, leading to promising applications in the fields of memristive devices. The smaller Gibbs free energy difference between the topological phases, the stable oxygen vacancy ordered structure, and the reversible topological phase transition promote the memristive effect, which is more conducive to its application in information storage, information processing, information calculation, and other related fields. In particular, extracting the current resistance or conductance of the two-terminal memristor to convert to the weight of the synapse in the neural network can simulate the behavior of biological synapses in their structure and function. In addition, in order to improve the performance of memristors and better apply them to neuromorphic computing, methods such as ion doping, electrode selection, interface modulation, and preparation process control have been demonstrated in memristors based on topological phase transition materials. At present, it is considered an effective method to obtain a unique resistive switching behavior by improving the process of preparing functional layers, regulating the crystal phase of topological phase transition materials, and constructing interface barrier-dependent devices. In this review, we systematically expound the resistance switching mechanism, resistance switching performance regulation, and neuromorphic computing of topological phase transition memristors, and provide some suggestions for the challenges faced by the development of the next generation of non-volatile memory and brain-like neuromorphic devices based on topological phase transition materials.

Guided anisotropic oxygen transport in vacancy ordered oxides

Anisotropic and efficient transport of ions under external stimuli governs the operation and failure mechanisms of energy-conversion systems and microelectronics devices. However, fundamental understanding of ion hopping processes is impeded by the lack of atomically precise materials and probes that allow for the monitoring and control at the appropriate time- and length- scales. In this work, using in-situ transmission electron microscopy, we directly show that oxygen ion migration in vacancy ordered, semiconducting SrFeO2.5 epitaxial thin films can be guided to proceed through two distinctly different diffusion pathways, each resulting in different polymorphs of SrFeO2.75 with different ground electronic properties before reaching a fully oxidized, metallic SrFeO3 phase. The diffusion steps and reaction intermediates are revealed by means of ab-initio calculations. The principles of controlling oxygen diffusion pathways and reaction intermediates demonstrated here may advance the rational design of structurally ordered oxides for tailored applications and provide insights for developing devices with multiple states of regulation.

Ultralong Distance Hydrogen Spillover Enabled by Valence Changes in a Metal Oxide Surface

Hydrogen spillover is a phenomenon in which hydrogen atoms generated on metal catalysts diffuse onto catalyst supports. This phenomenon offers reaction routes for functional materials. However, due to difficulties in visualizing hydrogen, the fundamental nature of the phenomenon, such as how far hydrogen diffuses, has not been well understood. Here, in this study, we fabricated catalytic model systems based on Pd-loaded SrFeO_x (x ∼ 2.8) epitaxial films and investigated hydrogen spillover. We show that hydrogen spillover on the SrFeO_x support extends over long distances (∼600 μm). Furthermore, the hydrogen-spillover-induced reduction of Fe⁴⁺ in the support yields large energies (as large as 200 kJ/mol), leading to the spontaneous hydrogen transfer and driving the surprisingly ultralong hydrogen diffusion. These results show that the valence changes in the supports' surfaces are the primary factor determining the hydrogen spillover distance. Our study leads to a deeper understanding of the long-debated issue of hydrogen spillover and provides insight into designing catalyst systems with enhanced properties.

Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating

Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO_3-δ (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO_2.5 (BM-SCO), is insulating and an antiferromagnet. Moreover, BM-SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (H-SCO) or vertically (V-SCO) to the film's surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show that H-SCO (antiferromagnetic insulator, AFI) can be converted to P-SCO (ferromagnetic metal, FM) and subsequently to V-SCO (AFI) by the insertion and subtraction of oxygen throughout thick films via ILG. Moreover, these processes are independent of substrate-induced strain which favors formation of H-SCO in the as-deposited film. The electric-field control of the OVC channels is a path toward the creation of oxitronic devices.

Dynamics of Anisotropic Oxygen-Ion Migration in Strained Cobaltites

Orientation control of the oxygen vacancy channel (OVC) is highly desirable for tailoring oxygen diffusion as it serves as a fast transport channel in ion conductors, which is widely exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ion hopping toward preferential vacant sites is a key to clarifying migration pathways. Here we report anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in situ thermal activation in atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to the OVC, determine the crucial role of the tolerance factor for OVC stability, and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable to ionic-oxide electronics.

Overlayer deposition-induced control of oxide ion concentration in SrFe0.5Co0.5O2.5 oxygen sponges

Controlling the oxide ion (O2-) concentration in oxides is essential to develop advanced ionic devices, i.e. solid oxide fuel cells, smart windows, memory devices, energy storage devices, and so on. Among many oxides several transition metal (TM)-based perovskite oxides show high oxide ion conductivity, and their physical properties show high sensitivity to the change of the oxide ion concentration. Here, the change in the oxide ion concentration is shown through the overlayer deposition on the SrFe0.5Co0.5O2.5 (SFCO) oxygen sponge film. We grew SFCO films followed by the deposition of two kinds of complex oxide films under exactly the same growth conditions, and observed the changes in the crystal structure, valence states, and magnetic ground states. As the NSMO overlayer grows, strong evidence of oxidation at the O K edge is shown. In addition, the Fe4+ feature is revealed, and the electron valence state of Co increased from 3 to 3.25. The oxide ion concentration of SFCO changes during layer growth due to oxidation or reduction due to differences in chemical potential. The present results might be useful to develop advanced ionic devices using TM-based perovskite oxides.

Atomic insight into spin, charge and lattice modulations at SrFeO3-x/SrTiO3 interfaces

Novel phenomena and functionalities at interfaces of oxide heterostructures are currently of great interest in a wide range of applications. At such interfaces, charge, spin, orbital and lattice ordering coexist and correlate closely, contributing to rich functional responses. By using atomically resolved imaging and spectroscopy techniques, we investigated magnetic behaviors and structural modulation at the SrFeO_3-x/SrTiO₃ interface. Fe/Ti element intermixing and oxygen vacancies occurred across a few unit cells at the interface. Furthermore, antiferromagnetic spin ordering of Fe with different valence states in the interface of SrFeO_3-x/SrTiO₃ induced uncompensated magnetic moments. Compared to the SrFeO_3-x/La_0.3Sr_0.7Al_0.65Ta_0.35O₃ heterojunction, the variations of charge and lattice order parameters at the SrFeO_3-x/SrTiO₃ interfaces were also determined by advanced electron microscopy, which provided a good understanding of the physical origin of disparate macroscopic magnetic properties, further investigated by magnetometer measurements and X-ray magnetic circular dichroism (XMCD) spectra. These studies provide comprehensive insight into the interfacial modulation of ferrite oxide, which may be useful for designing future devices in oxide electronics.

Strain-induced creation and switching of anion vacancy layers in perovskite oxynitrides

Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention has been paid to changes in chemical composition. Here we combine these two aspects to achieve strain-induced creation and switching of anion-vacancy patterns in perovskite films. Epitaxial SrVO₃ films are topochemically converted to anion-deficient oxynitrides by ammonia treatment, where the direction or periodicity of defect planes is altered depending on the substrate employed, unlike the known change in crystal orientation. First-principles calculations verified its biaxial strain effect. Like oxide heterostructures, the oxynitride has a superlattice of insulating and metallic blocks. Given the abundance of perovskite families, this study provides new opportunities to design superlattices by chemically modifying simple perovskite oxides with tunable anion-vacancy patterns through epitaxial lattice strain.

Enhanced Carbon Dioxide Decomposition Using Activated SrFeO3−δ

Today, climate change caused by global warming has become a worldwide problem with increasing greenhouse gas (GHG) emissions. Carbon capture and storage technologies have been developed to capture carbon dioxide (CO2); however, CO2 storage and utilization technologies are relatively less developed. In this light, we have reported efficient CO2 decomposition results using a nonperovskite metal oxide, SrFeCo0.5Ox, in a continuous-flow system. In this study, we report enhanced efficiency, reliability under isothermal conditions, and catalytic reproducibility through cyclic tests using SrFeO3−δ. This ferrite needs an activation process, and 3.5 vol% H2/N2 was used in this experiment. Activated oxygen-deficient SrFeO3−δ can decompose CO2 into carbon monoxide (CO) and carbon (C). Although SrFeO3−δ is a well-known material in different fields, no studies have reported its use in CO2 decomposition applications. The efficiency of CO2 decomposition using SrFeO3−δ reached ≥90%, and decomposition (≥80%) lasted for approximately 170 min. We also describe isothermal and cyclic experimental data for realizing commercial applications. We expect that these results will contribute to the mitigation of GHG emissions.

Nanoscale Phase Mixture and Multifield-Induced Topotactic Phase Transformation in SrFeOx

Nanoscale phase mixtures in transition-metal oxides (TMOs) often render these materials susceptible to external stimuli (electric field, mechanical stress, etc.), which can lead to rich functional properties and device applications. Here, direct observation and multifield manipulation of a nanoscale mixture of brownmillerite SrFeO_2.5 (BM-SFO) and perovskite SrFeO₃ (PV-SFO) phases in SrFeO_x (SFO) epitaxial thin films are reported. The mixed-phase SFO film in its pristine state exhibits a nanoscaffold structure consisting of PV-SFO nanodomains embedded in the BM-SFO matrix. This nanoscaffold structure produces gridlike patterns in the current and electrochemical strain maps, owing to the strikingly different electrical and electrochemical properties of BM-SFO and PV-SFO. Moreover, electric field control of reversible topotactic phase transformation between BM-SFO and PV-SFO is demonstrated by electric-field-induced reversible changes in surface height, conductance, and electrochemical strain response. In addition, it is also shown that the BM-SFO → PV-SFO phase transformation can be enabled by applying mechanical stress. This study therefore not only identifies a strong nanometric structure-property correlation in the mixed-phase SFO but also offers a new paradigm for the multifield control of topotactic phase transformation.

Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High-Density Resistive Switching Memory

Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating brownmillerite (BM) phase and conducting perovskite (PV) phase, has emerged as promising candidate materials for RS memories. Nevertheless, the microscopic mechanism of RS in these TMOs is still unclear. Furthermore, RS devices with simultaneously high density and superior memory performance are yet to be reported. Here, using SrFeO_x as a model system, it is directly observed that PV SrFeO₃ nanofilaments are formed and extend almost through the BM SrFeO_2.5 matrix in the ON state and are ruptured in the OFF state, unambiguously revealing a filamentary RS mechanism. The nanofilaments are ≈10 nm in diameter, enabling to downscale Au/SrFeO_x /SrRuO₃ RS devices to the 100 nm range for the first time. These nanodevices exhibit good performance including ON/OFF ratio as high as ≈10⁴ , retention time over 10⁵ s, and endurance up to 10⁷ cycles. This study significantly advances the understanding of the RS mechanism in TMOs exhibiting topotactic phase transformation, and it also demonstrates the potential of these materials for use in high-density RS memories.

Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO3 Thin Films

Lattice defects typically reduce lattice thermal conductivity, which has been widely exploited in applications such as thermoelectric energy conversion. Here, an anomalous dependence of the lattice thermal conductivity on point defects is demonstrated in epitaxial WO₃ thin films. Depending on the substrate, the lattice of epitaxial WO₃ expands or contracts as protons are intercalated by electrolyte gating or oxygen vacancies are introduced by adjusting growth conditions. Surprisingly, the observed lattice volume, instead of the defect concentration, plays the dominant role in determining the thermal conductivity. In particular, the thermal conductivity increases significantly with proton intercalation, which is contrary to the expectation that point defects typically lower the lattice thermal conductivity. The thermal conductivity can be dynamically varied by a factor of ≈1.7 via electrolyte gating, and tuned over a larger range, from 7.8 to 1.1 W m^-1 K^-1 , by adjusting the oxygen pressure during film growth. The electrolyte-gating-induced changes in thermal conductivity and lattice dimensions are reversible through multiple cycles. These findings not only expand the basic understanding of thermal transport in complex oxides, but also provide a path to dynamically control the thermal conductivity.

A Room-Temperature Ferroelectric Ferromagnet in a 1D Tetrahedral Chain Network

Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a 3D network of transition-metal-oxygen polyhedra (MO_x ) manifest spontaneous polarization. Meanwhile, some 2D networks of MO_x foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a 2D network, one can further challenge an uncharted mechanism of ferroelectricity in a 1D channel of MO_x and estimate its feasibility. Here, ferroelectricity and coupled ferromagnetism in a 1D FeO₄ tetrahedral chain network of a brownmillerite SrFeO_2.5 epitaxial thin film are presented. The result provides a new paradigm for designing low-dimensional MO_x networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets.

A Ferrite Synaptic Transistor with Topotactic Transformation

Hardware implementation of artificial synaptic devices that emulate the functions of biological synapses is inspired by the biological neuromorphic system and has drawn considerable interest. Here, a three-terminal ferrite synaptic device based on a topotactic phase transition between crystalline phases is presented. The electrolyte-gating-controlled topotactic phase transformation between brownmillerite SrFeO_2.5 and perovskite SrFeO_{3- δ} is confirmed from the examination of the crystal and electronic structure. A synaptic transistor with electrolyte-gated ferrite films by harnessing gate-controllable multilevel conduction states, which originate from many distinct oxygen-deficient perovskite structures of SrFeO_x induced by topotactic phase transformation, is successfully constructed. This three-terminal artificial synapse can mimic important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. Simulations of a neural network consisting of ferrite synaptic transistors indicate that the system offers high classification accuracy. These results provide insight into the potential application of advanced topotactic phase transformation materials for designing artificial synapses with high performance.