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Postiglione WM, Yu G, Chaturvedi V, Zhou H, Heltemes K, Jacobson A, Greven M, Leighton C. Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite-Brownmillerite Transformation in Electrolyte-Gated Ultrathin La 0.5Sr 0.5CoO 3-δ. ACS Appl Mater Interfaces 2024; 16:19184-19197. [PMID: 38564510 DOI: 10.1021/acsami.4c01336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3-δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.
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Affiliation(s)
- William M Postiglione
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Guichuan Yu
- Minnesota Supercomputing Institute, University of Minnesota, Minneapolis, Minnesota 55455, United States
- Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Vipul Chaturvedi
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Kei Heltemes
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Andrew Jacobson
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Martin Greven
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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2
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Nketia-Yawson V, Buer AB, Ahn H, Nketia-Yawson B, Jo JW. Hole Mobility Enhancement in Benzo[1,2-b:4,5-b']Dithiophene-Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid-State Electrolyte Gating. Macromol Rapid Commun 2024; 45:e2300634. [PMID: 38124531 DOI: 10.1002/marc.202300634] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 12/06/2023] [Indexed: 12/23/2023]
Abstract
Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite-based electronics. Particularly, the charge carrier mobility of conjugated polymer semiconductors has been deemed to be a vital figure-of-merit for achieving high-performance organic field-effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer in perovskite-functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA) gate dielectric, improvements in hole mobility of 0.019 cm2 V-1 s-1 are measured using an off-center spin-coating technique, which exceeds those of on-center counterparts (0.22 ± 0.07 × 10-2 cm2 V-1 s-1). Furthermore, the mobility drastically increases by adopting solid-state electrolyte gating, corresponding to 2.99 ± 1.03 cm2 V-1 s-1 for the control, and the best hole mobility is 8.03 cm2 V-1 s-1 (average ≈ 6.94 ± 0.59 cm2 V-1 s-1) for perovskite-functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite-functionalized organic transistor channel, resulting from the high-capacitance electrolyte dielectric.
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Affiliation(s)
- Vivian Nketia-Yawson
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (PHCT), Dongguk University, 30 Pildong-ro, 1-gil, Jung-Gu, Seoul, 04620, Republic of Korea
| | - Albert Buertey Buer
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (PHCT), Dongguk University, 30 Pildong-ro, 1-gil, Jung-Gu, Seoul, 04620, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, Pohang, Kyungbuk, 37673, Republic of Korea
| | - Benjamin Nketia-Yawson
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (PHCT), Dongguk University, 30 Pildong-ro, 1-gil, Jung-Gu, Seoul, 04620, Republic of Korea
| | - Jea Woong Jo
- Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (PHCT), Dongguk University, 30 Pildong-ro, 1-gil, Jung-Gu, Seoul, 04620, Republic of Korea
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3
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Cho G, Grinenval E, Gabriel JCP, Lebental B. Intense pH Sensitivity Modulation in Carbon Nanotube-Based Field-Effect Transistor by Non-Covalent Polyfluorene Functionalization. Nanomaterials (Basel) 2023; 13:1157. [PMID: 37049251 PMCID: PMC10096590 DOI: 10.3390/nano13071157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/15/2023] [Accepted: 03/16/2023] [Indexed: 06/19/2023]
Abstract
We compare the pH sensing performance of non-functionalized carbon nanotubes (CNT) field-effect transistors (p-CNTFET) and CNTFET functionalized with a conjugated polyfluorene polymer (labeled FF-UR) bearing urea-based moieties (f-CNTFET). The devices are electrolyte-gated, PMMA-passivated, 5 µm-channel FETs with unsorted, inkjet-printed single-walled CNT. In phosphate (PBS) and borate (BBS) buffer solutions, the p-CNTFETs exhibit a p-type operation while f-CNTFETs exhibit p-type behavior in BBS and ambipolarity in PBS. The sensitivity to pH is evaluated by measuring the drain current at a gate and drain voltage of -0.8 V. In PBS, p-CNTFETs show a linear, reversible pH response between pH 3 and pH 9 with a sensitivity of 26 ± 2.2%/pH unit; while f-CNTFETs have a much stronger, reversible pH response (373%/pH unit), but only over the range of pH 7 to pH 9. In BBS, both p-CNTFET and f-CNTFET show a linear pH response between pH 5 and 9, with sensitivities of 56%/pH and 96%/pH, respectively. Analysis of the I-V curves as a function of pH suggests that the increased pH sensitivity of f-CNTFET is consistent with interactions of FF-UR with phosphate ions in PBS and boric acid in BBS, with the ratio and charge of the complexed species depending on pH. The complexation affects the efficiency of electrolyte gating and the surface charge around the CNT, both of which modify the I-V response of the CNTFET, leading to the observed current sensitivity as a function of pH. The performances of p-CNTFET in PBS are comparable to the best results in the literature, while the performances of the f-CNTFET far exceed the current state-of-the-art by a factor of four in BBS and more than 10 over a limited range of pH in BBS. This is the first time that a functionalization other than carboxylate moieties has significantly improved the state-of-the-art of pH sensing with CNTFET or CNT chemistors. On the other hand, this study also highlights the challenge of transferring this performance to a real water matrix, where many different species may compete for interactions with FF-UR.
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Affiliation(s)
- Gookbin Cho
- Laboratoire de Physique des Interfaces et des Couches Minces, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique Paris, 91128 Palaiseau, France
| | - Eva Grinenval
- Laboratoire de Physique des Interfaces et des Couches Minces, LPICM, CNRS, Ecole Polytechnique, Institut Polytechnique Paris, 91128 Palaiseau, France
| | | | - Bérengère Lebental
- IMSE, COSYS, Université Gustave Eiffel, Marne-la-Vallée Campus, 77447 Marne-La-Vallée, France
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4
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Monalisha P, Li S, Jin T, Kumar PSA, Piramanayagam SN. A multilevel electrolyte-gated artificial synapse based on ruthenium-doped cobalt ferrite. Nanotechnology 2023; 34:165201. [PMID: 36645906 DOI: 10.1088/1361-6528/acb35a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 01/16/2023] [Indexed: 06/17/2023]
Abstract
Synaptic devices that emulate synchronized memory and processing are considered the core components of neuromorphic computing systems for the low-power implementation of artificial intelligence. In this regard, electrolyte-gated transistors (EGTs) have gained much scientific attention, having a similar working mechanism as the biological synapses. Moreover, compared to a traditional solid-state gate dielectric, the liquid dielectric has the key advantage of inducing extremely large modulation of carrier density while overcoming the problem of electric pinholes, that typically occurs when using large-area films gated through ultra-thin solid dielectrics. Herein we demonstrate a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating. In the CRFO-based EGT, we have obtained multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity, spike duration-dependent plasticity, long-term potentiation, and long-term depression successfully by applying electrical pulses. This study can motivate the development of advanced neuromorphic devices that leverage simultaneous modulation of electrical and magnetic properties in the same device and show a new direction to synaptic electronics.
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Affiliation(s)
- P Monalisha
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Tianli Jin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - P S Anil Kumar
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - S N Piramanayagam
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
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5
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Tiede DO, Saigal N, Ostovar H, Döring V, Lambers H, Wurstbauer U. Exciton Manifolds in Highly Ambipolar Doped WS 2. Nanomaterials (Basel) 2022; 12:3255. [PMID: 36145043 PMCID: PMC9504948 DOI: 10.3390/nano12183255] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Revised: 09/09/2022] [Accepted: 09/13/2022] [Indexed: 06/16/2023]
Abstract
The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable of shifting the Fermi level from the valence into the conduction band that is suitable to optically trace exciton binding as well as the single-particle band gap energies in the weakly doped regime. Combined spectroscopic imaging ellipsometry and photoluminescence spectroscopies spanning large n- and p-type doping with charge carrier densities up to 1014 cm-2 enable to study screening phenomena and doping dependent evolution of the rich exciton manifold whose origin is controversially discussed in literature. We show that the two most prominent emission bands in photoluminescence experiments are due to the recombination of spin-forbidden and momentum-forbidden charge neutral excitons activated by phonons. The observed interband transitions are redshifted and drastically weakened under electron or hole doping. This field-effect platform is not only suitable for studying exciton manifold but is also suitable for combined optical and transport measurements on degenerately doped atomically thin quantum materials at cryogenic temperatures.
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Affiliation(s)
- David Otto Tiede
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Nihit Saigal
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Hossein Ostovar
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Vera Döring
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Hendrik Lambers
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
| | - Ursula Wurstbauer
- Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
- Center for Soft Nanoscience (SoN), University of Münster, Busso-Peus-Straße 10, 48149 Münster, Germany
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6
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Rajapitamahuni AK, Manjeshwar AK, Kumar A, Datta A, Ranga P, Thoutam LR, Krishnamoorthy S, Singisetti U, Jalan B. Plasmon-Phonon Coupling in Electrostatically Gated β-Ga 2O 3 Films with Mobility Exceeding 200 cm 2 V -1 s -1. ACS Nano 2022; 16:8812-8819. [PMID: 35436095 DOI: 10.1021/acsnano.1c09535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Monoclinic β-Ga2O3, an ultra-wide bandgap semiconductor, has seen enormous activity in recent years. However, the fundamental study of the plasmon-phonon coupling that dictates electron transport properties has not been possible due to the difficulty in achieving higher carrier density (without introducing chemical disorder). Here, we report a highly reversible, electrostatic doping of β-Ga2O3 films with tunable carrier densities using ion-gel-gated electric double-layer transistor configuration. Combining temperature-dependent Hall effect measurements, transport modeling, and comprehensive mobility calculations using ab initio based electron-phonon scattering rates, we demonstrate an increase in the room-temperature mobility to 201 cm2 V-1 s-1 followed by a surprising decrease with an increasing carrier density due to the plasmon-phonon coupling. The modeling and experimental data further reveal an important "antiscreening" (of electron-phonon interaction) effect arising from dynamic screening from the hybrid plasmon-phonon modes. Our calculations show that a significantly higher room-temperature mobility of 300 cm2 V-1 s-1 is possible if high electron densities (>1020 cm-3) with plasmon energies surpassing the highest energy LO mode can be realized. As Ga2O3 and other polar semiconductors play an important role in several device applications, the fundamental understanding of the plasmon-phonon coupling can lead to the enhancement of mobility by harnessing the dynamic screening of the electron-phonon interactions.
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Affiliation(s)
- Anil Kumar Rajapitamahuni
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Anusha Kamath Manjeshwar
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Avinash Kumar
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Animesh Datta
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Praneeth Ranga
- Department of Electrical and Computers Engineering, The University of Utah, Salt Lake City, Utah 84112, United States
| | - Laxman Raju Thoutam
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Sriram Krishnamoorthy
- Department of Electrical and Computers Engineering, The University of Utah, Salt Lake City, Utah 84112, United States
- Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Uttam Singisetti
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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7
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Chaturvedi V, Postiglione WM, Chakraborty RD, Yu B, Tabiś W, Hameed S, Biniskos N, Jacobson A, Zhang Z, Zhou H, Greven M, Ferry VE, Leighton C. Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La 1-xSr xCoO 3-δ Films. ACS Appl Mater Interfaces 2021; 13:51205-51217. [PMID: 34693713 DOI: 10.1021/acsami.1c13828] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Much recent attention has focused on the voltage-driven reversible topotactic transformation between the ferromagnetic metallic perovskite (P) SrCoO3-δ and oxygen-vacancy-ordered antiferromagnetic insulating brownmillerite (BM) SrCoO2.5. This is emerging as a paradigmatic example of the power of electrochemical gating (using, e.g., ionic liquids/gels), the wide modulation of electronic, magnetic, and optical properties generating clear application potential. SrCoO3 films are challenging with respect to stability, however, and there has been little exploration of alternate compositions. Here, we present the first study of ion-gel-gating-induced P → BM transformations across almost the entire La1-xSrxCoO3 phase diagram (0 ≤ x ≤ 0.70), under both tensile and compressive epitaxial strain. Electronic transport, magnetometry, and operando synchrotron X-ray diffraction establish that voltage-induced P → BM transformations are possible at essentially all x, including x ≤ 0.50, where both P and BM phases are highly stable. Under small compressive strain, the transformation threshold voltage decreases from approximately +2.7 V at x = 0 to negligible at x = 0.70. Both larger compressive strain and tensile strain induce further threshold voltage lowering, particularly at low x. The P → BM threshold voltage is thus tunable, via both composition and strain. At x = 0.50, voltage-controlled ferromagnetism, transport, and optical transmittance are then demonstrated, achieving Curie temperature and resistivity modulations of ∼220 K and at least 5 orders of magnitude, respectively, and enabling estimation of the voltage-dependent Co valence. The results are analyzed in the context of doping- and strain-dependent oxygen vacancy formation energies and diffusion coefficients, establishing that it is thermodynamic factors, not kinetics, that underpin the decrease in the threshold voltage with x, that is, with increasing formal Co valence. These findings substantially advance the practical and mechanistic understanding of this voltage-driven transformation, with fundamental and technological implications.
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Affiliation(s)
- Vipul Chaturvedi
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - William M Postiglione
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Rohan D Chakraborty
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Biqiong Yu
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Wojciech Tabiś
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
- AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Krakow 30-059, Poland
| | - Sajna Hameed
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Nikolaos Biniskos
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Andrew Jacobson
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Zhan Zhang
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Martin Greven
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Vivian E Ferry
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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8
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de Rojas J, Salguero J, Ibrahim F, Chshiev M, Quintana A, Lopeandia A, Liedke MO, Butterling M, Hirschmann E, Wagner A, Abad L, Costa-Krämer JL, Menéndez E, Sort J. Magneto-Ionics in Single-Layer Transition Metal Nitrides. ACS Appl Mater Interfaces 2021; 13:30826-30834. [PMID: 34156228 PMCID: PMC8483439 DOI: 10.1021/acsami.1c06138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Accepted: 06/09/2021] [Indexed: 06/13/2023]
Abstract
Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. Iron nitrides require increased activation energy and, under high bias, exhibit more modest rates of magneto-ionic motion than cobalt nitrides. Ab initio calculations reveal that, based on the atomic bonding strength, the critical field required to induce nitrogen-ion motion is higher in iron nitrides (≈6.6 V nm-1) than in cobalt nitrides (≈5.3 V nm-1). Nonetheless, under large bias (i.e., well above the magneto-ionic onset and, thus, when magneto-ionics is fully activated), iron nitride films exhibit enhanced coercivity and larger generated saturation magnetization, surpassing many of the features of cobalt nitrides. The microstructural effects responsible for these enhanced magneto-ionic effects are discussed. These results open up the potential integration of magneto-ionics in existing nitride semiconductor materials in view of advanced memory system architectures.
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Affiliation(s)
- Julius de Rojas
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
| | - Joaquín Salguero
- IMN-Instituto
de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, Madrid 28760, Spain
| | - Fatima Ibrahim
- Univwesity
of Grenoble Alpes, CEA, CNRS, Spintec, Grenoble 38000, France
| | - Mairbek Chshiev
- Univwesity
of Grenoble Alpes, CEA, CNRS, Spintec, Grenoble 38000, France
- Institut
Universitaire de France, Paris 75231, France
| | - Alberto Quintana
- Department
of Physics, Georgetown University, Washington, District of
Columbia 20057, United
States
| | - Aitor Lopeandia
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, Barcelona E-08193, Spain
| | - Maciej O. Liedke
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Maik Butterling
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Eric Hirschmann
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Andreas Wagner
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Llibertat Abad
- Institut
de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus
UAB, Bellaterra, Barcelona E-08193, Spain
| | - José L. Costa-Krämer
- IMN-Instituto
de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, Madrid 28760, Spain
| | - Enric Menéndez
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
| | - Jordi Sort
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
- Institució
Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, Barcelona E-08010, Spain
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9
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Chen Z, Yang K, Xian T, Kocabas C, Morozov SV, Castro Neto AH, Novoselov KS, Andreeva DV, Koperski M. Electrically Controlled Thermal Radiation from Reduced Graphene Oxide Membranes. ACS Appl Mater Interfaces 2021; 13:27278-27283. [PMID: 34086457 DOI: 10.1021/acsami.1c04352] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate a fabrication procedure of hybrid devices that consist of reduced graphene oxide films supported by porous polymer membranes that host ionic solutions. We find that we can control the thermal radiation from the surface of reduced graphene oxide through a process of electrically driven reversible ionic intercalation. Through a comparative analysis of the structural, chemical, and optical properties of our reduced graphene oxide films, we identify that the dominant mechanism leading to the intercalation-induced reduction of light emission is Pauli blocking of the interband recombination of charge carriers. We inspect the capabilities of our devices to act as a platform for the electrical control of mid-infrared photonics by observing a bias-induced reduction of apparent temperature of hot surfaces visualized through an infrared thermal camera.
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Affiliation(s)
- Zhaolong Chen
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Kou Yang
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Tongfeng Xian
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Coskun Kocabas
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, U.K
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, U.K
- Henry Royce Institute for Advanced Materials, University of Manchester, Oxford Road, Manchester M13 9PL, U.K
| | - Sergei V Morozov
- Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia
| | - Antonio H Castro Neto
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Kostya S Novoselov
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
| | - Daria V Andreeva
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Maciej Koperski
- Materials Science and Engineering, National University of Singapore, 117575 Singapore
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10
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Nishidome H, Nagai K, Uchida K, Ichinose Y, Yomogida Y, Miyata Y, Tanaka K, Yanagi K. Control of High-Harmonic Generation by Tuning the Electronic Structure and Carrier Injection. Nano Lett 2020; 20:6215-6221. [PMID: 32787188 DOI: 10.1021/acs.nanolett.0c02717] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
High-harmonic generation (HHG), which is the generation of light with multiple optical harmonics, is an unconventional nonlinear optical phenomenon beyond the perturbation regime. HHG, which was initially observed in gaseous media, has recently been demonstrated in solid-state materials. Determining how to control such extreme nonlinear optical phenomena is a challenging subject. Here, we demonstrate the control of HHG through tuning the electronic structure and carrier injection using single-walled carbon nanotubes (SWCNTs). We reveal systematic changes in the high-harmonic spectra of SWCNTs with a series of electronic structures ranging from a metal structure to a semiconductor structure. We demonstrate enhancement or reduction of harmonic generation by more than 1 order of magnitude by tuning the electron and hole injection into the semiconductor SWCNTs through electrolyte gating. These results open a path toward the control of HHG in the context of field-effect transistor devices.
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Affiliation(s)
- Hiroyuki Nishidome
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Kohei Nagai
- Department of Physics, Kyoto University, Sakyo-ku, Kyoto 606-8502, Japan
| | - Kento Uchida
- Department of Physics, Kyoto University, Sakyo-ku, Kyoto 606-8502, Japan
| | - Yota Ichinose
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Yohei Yomogida
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Koichiro Tanaka
- Department of Physics, Kyoto University, Sakyo-ku, Kyoto 606-8502, Japan
- Institute for Integrated Cell-Material Science (WPI-iCeMs), Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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11
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Ning S, Huberman SC, Ding Z, Nahm HH, Kim YH, Kim HS, Chen G, Ross CA. Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO 3 Thin Films. Adv Mater 2019; 31:e1903738. [PMID: 31517407 DOI: 10.1002/adma.201903738] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2019] [Revised: 08/13/2019] [Indexed: 05/29/2023]
Abstract
Lattice defects typically reduce lattice thermal conductivity, which has been widely exploited in applications such as thermoelectric energy conversion. Here, an anomalous dependence of the lattice thermal conductivity on point defects is demonstrated in epitaxial WO3 thin films. Depending on the substrate, the lattice of epitaxial WO3 expands or contracts as protons are intercalated by electrolyte gating or oxygen vacancies are introduced by adjusting growth conditions. Surprisingly, the observed lattice volume, instead of the defect concentration, plays the dominant role in determining the thermal conductivity. In particular, the thermal conductivity increases significantly with proton intercalation, which is contrary to the expectation that point defects typically lower the lattice thermal conductivity. The thermal conductivity can be dynamically varied by a factor of ≈1.7 via electrolyte gating, and tuned over a larger range, from 7.8 to 1.1 W m-1 K-1 , by adjusting the oxygen pressure during film growth. The electrolyte-gating-induced changes in thermal conductivity and lattice dimensions are reversible through multiple cycles. These findings not only expand the basic understanding of thermal transport in complex oxides, but also provide a path to dynamically control the thermal conductivity.
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Affiliation(s)
- Shuai Ning
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Samuel C Huberman
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhiwei Ding
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Ho-Hyun Nahm
- Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea
| | - Yong-Hyun Kim
- Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea
| | - Hyun-Suk Kim
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea
| | - Gang Chen
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Caroline A Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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12
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Ren X, Wang Y, Xie Z, Xue F, Leighton C, Frisbie CD. Gate-Tuned Insulator-Metal Transition in Electrolyte-Gated Transistors Based on Tellurene. Nano Lett 2019; 19:4738-4744. [PMID: 31181883 DOI: 10.1021/acs.nanolett.9b01827] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Tellurene is a recently discovered 2D material with high hole mobility and air stability, rendering it a good candidate for future applications in electronics, optoelectronics, and energy devices. However, the physical properties of tellurene remain poorly understood. In this paper, we report on the fabrication and characterization of high-performance electrolyte-gated transistors (EGTs) based on solution-grown tellurene flakes <30 nm in thickness. Both Hall measurements and resistance-temperature behavior down to 2 K are recorded at multiple gate voltages, and an electronic phase diagram is generated. The results show that it is possible to cross the insulator-metal transition in tellurene EGTs by tuning gate voltage, achieving mobility up to ∼500 cm2 V-1 s-1. In particular, a truly metallic 2D state is observed at gate-induced hole densities >1 × 1013 cm-2, as confirmed by the temperature dependence of resistance and magnetoresistance measurements. Wide-range tuning of the electronic ground state of tellurene is thus achievable in EGTs, opening up new opportunities to realize electrical control of its physical properties.
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13
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Cadilha Marques G, Weller D, Erozan AT, Feng X, Tahoori M, Aghassi-Hagmann J. Progress Report on "From Printed Electrolyte-Gated Metal-Oxide Devices to Circuits". Adv Mater 2019; 31:e1806483. [PMID: 30891821 DOI: 10.1002/adma.201806483] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2018] [Revised: 12/06/2018] [Indexed: 06/09/2023]
Abstract
Printed electrolyte-gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low-voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n-type electrolyte-gated field-effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low-power printed electronics applications.
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Affiliation(s)
- Gabriel Cadilha Marques
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Chair of Dependable Nano Computing (CDNC), Department of Computer Science, Karlsruhe Institute of Technology (KIT), Haid-und-Neu-Str. 7, 76131, Karlsruhe, Germany
| | - Dennis Weller
- Chair of Dependable Nano Computing (CDNC), Department of Computer Science, Karlsruhe Institute of Technology (KIT), Haid-und-Neu-Str. 7, 76131, Karlsruhe, Germany
| | - Ahmet Turan Erozan
- Chair of Dependable Nano Computing (CDNC), Department of Computer Science, Karlsruhe Institute of Technology (KIT), Haid-und-Neu-Str. 7, 76131, Karlsruhe, Germany
| | - Xiaowei Feng
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Department of Electrical Engineering and Information Technology, Offenburg University of Applied Sciences, Badstr. 24, 77652, Offenburg, Germany
| | - Mehdi Tahoori
- Chair of Dependable Nano Computing (CDNC), Department of Computer Science, Karlsruhe Institute of Technology (KIT), Haid-und-Neu-Str. 7, 76131, Karlsruhe, Germany
| | - Jasmin Aghassi-Hagmann
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Department of Electrical Engineering and Information Technology, Offenburg University of Applied Sciences, Badstr. 24, 77652, Offenburg, Germany
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14
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Ge C, Liu CX, Zhou QL, Zhang QH, Du JY, Li JK, Wang C, Gu L, Yang GZ, Jin KJ. A Ferrite Synaptic Transistor with Topotactic Transformation. Adv Mater 2019; 31:e1900379. [PMID: 30924206 DOI: 10.1002/adfm.201902702] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2019] [Revised: 03/14/2019] [Indexed: 05/28/2023]
Abstract
Hardware implementation of artificial synaptic devices that emulate the functions of biological synapses is inspired by the biological neuromorphic system and has drawn considerable interest. Here, a three-terminal ferrite synaptic device based on a topotactic phase transition between crystalline phases is presented. The electrolyte-gating-controlled topotactic phase transformation between brownmillerite SrFeO2.5 and perovskite SrFeO3- δ is confirmed from the examination of the crystal and electronic structure. A synaptic transistor with electrolyte-gated ferrite films by harnessing gate-controllable multilevel conduction states, which originate from many distinct oxygen-deficient perovskite structures of SrFeOx induced by topotactic phase transformation, is successfully constructed. This three-terminal artificial synapse can mimic important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. Simulations of a neural network consisting of ferrite synaptic transistors indicate that the system offers high classification accuracy. These results provide insight into the potential application of advanced topotactic phase transformation materials for designing artificial synapses with high performance.
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Affiliation(s)
- Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Chang-Xiang Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics, Capital Normal University, Beijing, 100048, China
| | - Qing-Li Zhou
- Department of Physics, Capital Normal University, Beijing, 100048, China
| | - Qing-Hua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Yu Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Kun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guo-Zhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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15
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Ge C, Liu CX, Zhou QL, Zhang QH, Du JY, Li JK, Wang C, Gu L, Yang GZ, Jin KJ. A Ferrite Synaptic Transistor with Topotactic Transformation. Adv Mater 2019; 31:e1900379. [PMID: 30924206 DOI: 10.1002/adma.201900379] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2019] [Revised: 03/14/2019] [Indexed: 06/09/2023]
Abstract
Hardware implementation of artificial synaptic devices that emulate the functions of biological synapses is inspired by the biological neuromorphic system and has drawn considerable interest. Here, a three-terminal ferrite synaptic device based on a topotactic phase transition between crystalline phases is presented. The electrolyte-gating-controlled topotactic phase transformation between brownmillerite SrFeO2.5 and perovskite SrFeO3- δ is confirmed from the examination of the crystal and electronic structure. A synaptic transistor with electrolyte-gated ferrite films by harnessing gate-controllable multilevel conduction states, which originate from many distinct oxygen-deficient perovskite structures of SrFeOx induced by topotactic phase transformation, is successfully constructed. This three-terminal artificial synapse can mimic important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. Simulations of a neural network consisting of ferrite synaptic transistors indicate that the system offers high classification accuracy. These results provide insight into the potential application of advanced topotactic phase transformation materials for designing artificial synapses with high performance.
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Affiliation(s)
- Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Chang-Xiang Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics, Capital Normal University, Beijing, 100048, China
| | - Qing-Li Zhou
- Department of Physics, Capital Normal University, Beijing, 100048, China
| | - Qing-Hua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Yu Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Kun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guo-Zhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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16
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Prasad B, Pfanzelt G, Fillis-Tsirakis E, Zachman MJ, Kourkoutis LF, Mannhart J. Integrated Circuits Comprising Patterned Functional Liquids. Adv Mater 2018; 30:e1802598. [PMID: 30015987 DOI: 10.1002/adma.201802598] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2018] [Revised: 06/11/2018] [Indexed: 06/08/2023]
Abstract
Solid-state heterostructures are the cornerstone of modern electronics. To enhance the functionality and performance of integrated circuits, the spectrum of materials used in the heterostructures is being expanded by an increasing number of compounds and elements of the periodic table. While the integration of liquids and solid-liquid interfaces into such systems would allow unique and advanced functional properties and would enable integrated nanoionic circuits, solid-state heterostructures that incorporate liquids have not been considered thus far. Here solid-state heterostructures with integrated liquids are proposed, realized, and characterized, thereby opening a vast, new phase space of materials and interfaces for integrated circuits. Devices containing tens of microscopic capacitors and field-effect transistors are fabricated by using integrated patterned NaCl aqueous solutions. This work paves the way to integrated electronic circuits that include highly integrated liquids, thus yielding a wide array of novel research and application opportunities based on microscopic solid/liquid systems.
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Affiliation(s)
- Bhagwati Prasad
- Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany
| | - Georg Pfanzelt
- Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany
| | | | - Michael J Zachman
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Lena F Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
| | - Jochen Mannhart
- Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany
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17
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Salihoglu O, Uzlu HB, Yakar O, Aas S, Balci O, Kakenov N, Balci S, Olcum S, Süzer S, Kocabas C. Graphene-Based Adaptive Thermal Camouflage. Nano Lett 2018; 18:4541-4548. [PMID: 29947216 DOI: 10.1021/acs.nanolett.8b01746] [Citation(s) in RCA: 93] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
In nature, adaptive coloration has been effectively utilized for concealment and signaling. Various biological mechanisms have evolved to tune the reflectivity for visible and ultraviolet light. These examples inspire many artificial systems for mimicking adaptive coloration to match the visual appearance to their surroundings. Thermal camouflage, however, has been an outstanding challenge which requires an ability to control the emitted thermal radiation from the surface. Here we report a new class of active thermal surfaces capable of efficient real-time electrical-control of thermal emission over the full infrared (IR) spectrum without changing the temperature of the surface. Our approach relies on electro-modulation of IR absorptivity and emissivity of multilayer graphene via reversible intercalation of nonvolatile ionic liquids. The demonstrated devices are light (30 g/m2), thin (<50 μm), and ultraflexible, which can conformably coat their environment. In addition, by combining active thermal surfaces with a feedback mechanism, we demonstrate realization of an adaptive thermal camouflage system which can reconfigure its thermal appearance and blend itself with the varying thermal background in a few seconds. Furthermore, we show that these devices can disguise hot objects as cold and cold ones as hot in a thermal imaging system. We anticipate that, the electrical control of thermal radiation would impact on a variety of new technologies ranging from adaptive IR optics to heat management for outer space applications.
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Affiliation(s)
- Omer Salihoglu
- Department of Physics , Bilkent University , 06800 , Ankara Turkey
| | | | - Ozan Yakar
- Department of Physics , Bilkent University , 06800 , Ankara Turkey
| | - Shahnaz Aas
- Department of Physics , Bilkent University , 06800 , Ankara Turkey
| | - Osman Balci
- Department of Physics , Bilkent University , 06800 , Ankara Turkey
| | - Nurbek Kakenov
- Department of Physics , Bilkent University , 06800 , Ankara Turkey
| | - Sinan Balci
- Department of Photonics , Izmir Institute of Technology , 35430 Izmir , Turkey
| | - Selim Olcum
- Department of Biological Engineering , Massachusetts Institute of Technology Cambridge Massachusetts 02139-4307 , United States
| | - Sefik Süzer
- Department of Chemistry , Bilkent University , 06800 , Ankara Turkey
| | - Coskun Kocabas
- Department of Physics , Bilkent University , 06800 , Ankara Turkey
- School of Materials and National Graphene Institute , University of Manchester , Oxford Road , Manchester , M13 9PL , United Kingdom
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18
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Sharma BK, Stoesser A, Mondal SK, Garlapati SK, Fawey MH, Chakravadhanula VSK, Kruk R, Hahn H, Dasgupta S. High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface. ACS Appl Mater Interfaces 2018; 10:22408-22418. [PMID: 29893115 DOI: 10.1021/acsami.8b04892] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes, and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO)-based-diffused a-IGZO-ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping-mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS-based logic circuits have also been demonstrated toward new-generation portable electronics.
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Affiliation(s)
- Bhupendra K Sharma
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Anna Stoesser
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | | | - Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Mohammed H Fawey
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
- Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD) , 64287 Darmstadt , Germany
| | | | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
- Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD) , 64287 Darmstadt , Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany
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19
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Yang JT, Ge C, Du JY, Huang HY, He M, Wang C, Lu HB, Yang GZ, Jin KJ. Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor. Adv Mater 2018; 30:e1801548. [PMID: 29974526 DOI: 10.1002/adma.201801548] [Citation(s) in RCA: 108] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2018] [Revised: 06/01/2018] [Indexed: 06/08/2023]
Abstract
Considering that the human brain uses ≈1015 synapses to operate, the development of effective artificial synapses is essential to build brain-inspired computing systems. In biological synapses, the voltage-gated ion channels are very important for regulating the action-potential firing. Here, an electrolyte-gated transistor using WO3 with a unique tunnel structure, which can emulate the ionic modulation process of biological synapses, is proposed. The transistor successfully realizes synaptic functions of both short-term and long-term plasticity. Short-term plasticity is mimicked with the help of electrolyte ion dynamics under low electrical bias, whereas the long-term plasticity is realized using proton insertion in WO3 under high electrical bias. This is a new working approach to control the transition from short-term memory to long-term memory using different gate voltage amplitude for artificial synapses. Other essential synaptic behaviors, such as paired pulse facilitation, the depression and potentiation of synaptic weight, as well as spike-timing-dependent plasticity are also implemented in this artificial synapse. These results provide a new recipe for designing synaptic electrolyte-gated transistors through the electrostatic and electrochemical effects.
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Affiliation(s)
- Jing-Ting Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Yu Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - He-Yi Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hui-Bin Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guo-Zhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China
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20
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Qin F, Ideue T, Shi W, Zhang Y, Suzuki R, Yoshida M, Saito Y, Iwasa Y. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating. J Vis Exp 2018:56862. [PMID: 29708534 PMCID: PMC5933487 DOI: 10.3791/56862] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022] Open
Abstract
A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.
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Affiliation(s)
- Feng Qin
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo;
| | - Wu Shi
- Materials Sciences Division, Lawrence Berkeley National Laboratory
| | - Yijin Zhang
- Institute of Scientific and Industrial Research, Osaka University; Max Planck Institute for Solid State Research
| | - Ryuji Suzuki
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo
| | | | - Yu Saito
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo; RIKEN Center for Emergent Matter Science (CEMS)
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21
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Valitova I, Natile MM, Soavi F, Santato C, Cicoira F. Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes. ACS Appl Mater Interfaces 2017; 9:37013-37021. [PMID: 28971670 DOI: 10.1021/acsami.7b09912] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO2) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO2 transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO2 films. Since decreasing the SnO2 area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO2 transistors that operate in the enhancement mode that can withstand moderate mechanical bending.
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Affiliation(s)
- Irina Valitova
- Department of Chemical Engineering, Polytechnique Montréal , H3T 1J4 Montreal, Canada
| | - Marta Maria Natile
- CNR-Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia, Consiglio Nazionale delle Ricerche (ICMATE-CNR) and Dipartimento di Scienze Chimiche, Università di Padova , Via F. Marzolo 1, Padova 35131, Italy
| | - Francesca Soavi
- Dipartimento di Chimica "Giacomo Ciamician", Università di Bologna , Via Selmi 2, Bologna 40126, Italy
| | - Clara Santato
- Department of Engineering Physics, Polytechnique Montréal , H3T 1J4 Montreal, Canada
| | - Fabio Cicoira
- Department of Chemical Engineering, Polytechnique Montréal , H3T 1J4 Montreal, Canada
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22
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Zhang L, Zeng S, Yin X, Asmara TC, Yang P, Han K, Cao Y, Zhou W, Wan D, Tang CS, Rusydi A, Venkatesan T. The Mechanism of Electrolyte Gating on High-T c Cuprates: The Role of Oxygen Migration and Electrostatics. ACS Nano 2017; 11:9950-9956. [PMID: 28960953 DOI: 10.1021/acsnano.7b03978] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2, and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role, while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains, while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.
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Affiliation(s)
- Lingchao Zhang
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Shengwei Zeng
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Xinmao Yin
- Department of Physics, National University of Singapore , Singapore 117551
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University , Shenzhen, China 518060
| | - Teguh Citra Asmara
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
| | - Kun Han
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Yu Cao
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Wenxiong Zhou
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Dongyang Wan
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
| | - Chi Sin Tang
- Department of Physics, National University of Singapore , Singapore 117551
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
- NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore , Singapore 117456
| | - Andrivo Rusydi
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
- Singapore Synchrotron Light Source (SSLS), National University of Singapore , 5 Research Link, Singapore 117603
| | - Thirumalai Venkatesan
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411
- Department of Physics, National University of Singapore , Singapore 117551
- NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore , Singapore 117456
- Department of Electrical and Computer Engineering, National University of Singapore , Singapore 117576
- Department of Materials Science and Engineering, National University of Singapore , Singapore 117575
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23
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Alimoradi Jazi M, Janssen VAEC, Evers WH, Tadjine A, Delerue C, Siebbeles LDA, van der Zant HSJ, Houtepen AJ, Vanmaekelbergh D. Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor. Nano Lett 2017; 17:5238-5243. [PMID: 28805396 PMCID: PMC5599871 DOI: 10.1021/acs.nanolett.7b01348] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Self-assembled nanocrystal solids show promise as a versatile platform for novel optoelectronic materials. Superlattices composed of a single layer of lead-chalcogenide and cadmium-chalcogenide nanocrystals with epitaxial connections between the nanocrystals, present outstanding questions to the community regarding their predicted band structure and electronic transport properties. However, the as-prepared materials are intrinsic semiconductors; to occupy the bands in a controlled way, chemical doping or external gating is required. Here, we show that square superlattices of PbSe nanocrystals can be incorporated as a nanocrystal monolayer in a transistor setup with an electrolyte gate. The electron (and hole) density can be controlled by the gate potential, up to 8 electrons per nanocrystal site. The electron mobility at room temperature is 18 cm2/(V s). Our work forms a first step in the investigation of the band structure and electronic transport properties of two-dimensional nanocrystal superlattices with controlled geometry, chemical composition, and carrier density.
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Affiliation(s)
- M. Alimoradi Jazi
- Debye
Institute for Nanomaterials Science, University
of Utrecht, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - V. A. E. C. Janssen
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - W. H. Evers
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - A. Tadjine
- IEMN-Department
of ISEN, UMR CNRS 8520, 59046 Lille, France
| | - C. Delerue
- IEMN-Department
of ISEN, UMR CNRS 8520, 59046 Lille, France
| | - L. D. A. Siebbeles
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - H. S. J. van der Zant
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628 CJ Delft, The Netherlands
| | - A. J. Houtepen
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - D. Vanmaekelbergh
- Debye
Institute for Nanomaterials Science, University
of Utrecht, Princetonplein 1, 3584 CC Utrecht, The Netherlands
- E-mail:
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24
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Reitz C, Wang D, Stoeckel D, Beck A, Leichtweiss T, Hahn H, Brezesinski T. Applying Capacitive Energy Storage for In Situ Manipulation of Magnetization in Ordered Mesoporous Perovskite-Type LSMO Thin Films. ACS Appl Mater Interfaces 2017; 9:22799-22807. [PMID: 28367631 DOI: 10.1021/acsami.7b01978] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Mesostructured nonsilicate materials, particularly mixed-metal oxides, are receiving much attention in recent years because of their potential for numerous applications. Via the polymer-templating method, perovskite-type lanthanum strontium manganese oxide (La1-xSrxMnO3, LSMO, with x ≈ 0.15 to 0.30) with a continuous 3D cubic network of 23 nm pores is prepared in thin-film form for the first time. Characterization results from grazing incidence X-ray scattering, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and electron microscopy and tomography show that the dip-coated sol-gel-derived films are of high quality in terms of both composition and morphology and that they are stable to over 700 °C. Magnetic and magnetotransport measurements demonstrate that the material with the highest strontium concentration is ferromagnetic at room temperature and exhibits metallic resistivity behavior below 270 K. Besides, it behaves differently from epitaxial layers (e.g., enhanced low-field magnetoresistance effect). It is also shown that carriers (electrons and holes) can be induced into the polymer-templated mesostructured LSMO films via capacitive double-layer charging. This kind of electrostatic doping utilizing ionic liquid gating causes large relative changes in magnetic susceptibility at room temperature and is a viable technique to tune the magnetic phase diagram in situ.
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Affiliation(s)
| | | | - Daniela Stoeckel
- Department of Chemistry, University of Marburg , Hans-Meerwein-Straße, 35032 Marburg, Germany
- Institute of Physical Chemistry, Justus-Liebig-University Giessen , Heinrich-Buff-Ring 17, 35392 Giessen, Germany
| | | | - Thomas Leichtweiss
- Institute of Physical Chemistry, Justus-Liebig-University Giessen , Heinrich-Buff-Ring 17, 35392 Giessen, Germany
| | - Horst Hahn
- Helmholtz Institute Ulm for Electrochemical Energy Storage, Helmholtzstraße 11, 89081 Ulm, Germany
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25
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von Seggern F, Keskin I, Koos E, Kruk R, Hahn H, Dasgupta S. Temperature-Dependent Performance of Printed Field-Effect Transistors with Solid Polymer Electrolyte Gating. ACS Appl Mater Interfaces 2016; 8:31757-31763. [PMID: 27802016 DOI: 10.1021/acsami.6b10939] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Printable, physical, and air-stable composite solid polymer electrolytes (CSPEs) with high ionic conductivity have been established as a suitable alternative to standard dielectric gate insulators for printed field-effect transistors (FETs) and logics. We have performed a stress and temperature stability study involving several CSPEs. Mechanical tensile and shear tests have been performed to determine the physical condition of CSPEs. A comprehensive temperature dependent study has been conducted within the working temperature range which electric double layer (EDL) capacitors or CSPE-gated FETs may typically experience during their lifetime. Moreover, calorimetric measurements have been performed to investigate the CSPEs stability, especially at low temperatures. Mechanical characterizations have shown tensile strength and shear modulus of the material that is typical for solid polymer electrolytes while DSC measurements show no change in the physical state within the measured temperature range. An expected increase in ionic conductivity of the CSPEs of nearly 1 order of magnitude has been observed with an increase in temperature, while an anomalous positive temperature relationship to EDL capacitance has also been noticed. Interestingly, the transistor performance characteristics, namely, on-current and threshold voltage, are found to be quite independent of the temperature, thus ensuring a large and stable operation temperature window for CSPE-gated FETs. The other parameters, subthreshold slope and the device mobility, have varied following the classical semiconductor behavior. In fact, the present study not only provides a detailed understanding of temperature dependence of the CSPE-gated FETs but also offers an insight into the physical and electrical properties of the CSPEs itself. Therefore, these results may very well help to comprehend and improve EDL capacitors, supercapacitors, and other devices that use CSPEs as the active material.
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Affiliation(s)
- Falk von Seggern
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technical University of Darmstadt (TUD) , D-64287 Darmstadt, Jovanka-Bontschits-Straße 2, Germany
| | - Inna Keskin
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany
| | - Erin Koos
- Institute for Mechanical Process and Mechanics, Karlsruhe Institute of Technology (KIT) , Straße am Forum 8, D-76131 Karlsruhe, Germany
- Department of Chemical Engineering, KU Leuven , Celestijnenlaan 200f, 3001 Heverlee, Belgium
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technical University of Darmstadt (TUD) , D-64287 Darmstadt, Jovanka-Bontschits-Straße 2, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany
- Department of Materials Engineering, Indian Institute of Science , Bangalore 560012, India
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26
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Robin A, Livache C, Ithurria S, Lacaze E, Dubertret B, Lhuillier E. Surface Control of Doping in Self-Doped Nanocrystals. ACS Appl Mater Interfaces 2016; 8:27122-27128. [PMID: 27640878 DOI: 10.1021/acsami.6b09530] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Self-doped nanocrystals raise great interest for infrared (IR) optoelectronics because their optical properties span from near to far IR. However, their integration for photodetection requires a fine understanding of the origin of their doping and also a way to control the magnitude of the doping. In this paper, we demonstrate that a fine control of the doping level between 0.1 and 2 electrons per dot is obtained through ligand exchange. The latter affects not only the interparticle coupling but also their optical properties because of the band-shift resulting from the presence of surface dipoles. We demonstrate that self-doping is a bulk process and that surface dipoles can control its magnitude. We additionally propose a model to quantify the dipole involved with each ligand. We eventually use the ligand design rule previously evidenced to build a near-infrared photodetector on a soft and transparent substrate. The latter significantly improves the performance compared to previously reported colloidal quantum dot-based photodetectors on plastic substrates operated in the telecom wavelength range.
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Affiliation(s)
- Adrien Robin
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin, 75005 Paris, France
- Nexdot, Biocitech , 102 avenue Gaston Roussel, 93230 Romainville, France
| | - Clément Livache
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin, 75005 Paris, France
- Sorbonne Universités, UPMC Univ Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris, 4 place jussieu, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin, 75005 Paris, France
| | - Emmanuelle Lacaze
- Sorbonne Universités, UPMC Univ Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris, 4 place jussieu, 75005 Paris, France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin, 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Universités, UPMC Univ Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris, 4 place jussieu, 75005 Paris, France
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27
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ViolBarbosa C, Karel J, Kiss J, Gordan OD, Altendorf SG, Utsumi Y, Samant MG, Wu YH, Tsuei KD, Felser C, Parkin SS. Transparent conducting oxide induced by liquid electrolyte gating. Proc Natl Acad Sci U S A 2016; 113:11148-51. [PMID: 27647884 DOI: 10.1073/pnas.1611745113] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Optically transparent conducting materials are essential in modern technology. These materials are used as electrodes in displays, photovoltaic cells, and touchscreens; they are also used in energy-conserving windows to reflect the infrared spectrum. The most ubiquitous transparent conducting material is tin-doped indium oxide (ITO), a wide-gap oxide whose conductivity is ascribed to n-type chemical doping. Recently, it has been shown that ionic liquid gating can induce a reversible, nonvolatile metallic phase in initially insulating films of WO3 Here, we use hard X-ray photoelectron spectroscopy and spectroscopic ellipsometry to show that the metallic phase produced by the electrolyte gating does not result from a significant change in the bandgap but rather originates from new in-gap states. These states produce strong absorption below ∼1 eV, outside the visible spectrum, consistent with the formation of a narrow electronic conduction band. Thus WO3 is metallic but remains colorless, unlike other methods to realize tunable electrical conductivity in this material. Core-level photoemission spectra show that the gating reversibly modifies the atomic coordination of W and O atoms without a substantial change of the stoichiometry; we propose a simple model relating these structural changes to the modifications in the electronic structure. Thus we show that ionic liquid gating can tune the conductivity over orders of magnitude while maintaining transparency in the visible range, suggesting the use of ionic liquid gating for many applications.
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28
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Walter J, Wang H, Luo B, Frisbie CD, Leighton C. Electrostatic versus Electrochemical Doping and Control of Ferromagnetism in Ion-Gel-Gated Ultrathin La0.5Sr0.5CoO3-δ. ACS Nano 2016; 10:7799-810. [PMID: 27479878 DOI: 10.1021/acsnano.6b03403] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Recently, electrolyte gating techniques employing ionic liquids/gels in electric double layer transistors have proven remarkably effective in tuning charge carrier density in a variety of materials. The ability to control surface carrier densities at levels above 10(14) cm(-2) has led to widespread use in the study of superconductivity, insulator-metal transitions, etc. In many cases, controversy remains over the doping mechanism, however (i.e., electrostatic vs electrochemical (e.g., redox-based)), and the technique has been less applied to magnetic materials. Here, we discuss ion gel gating of nanoscale 8-unit-cell-thick hole-doped La0.5Sr0.5CoO3-δ (LSCO) films, probing in detail the critical bias windows and doping mechanisms. The LSCO films, which are under compressive stress on LaAlO3(001) substrates, are metallic and ferromagnetic (Curie temperature, TC ∼ 170 K), with strong anomalous Hall effect and perpendicular magnetic anisotropy. Transport measurements reveal that negative gate biases lead to reversible hole accumulation (i.e., predominantly electrostatic operation) up to some threshold, whereas positive bias immediately induces irreversibility. Experiments in inert/O2 atmospheres directly implicate oxygen vacancies in this irreversibility, supported by atomic force microscopy and X-ray photoelectron spectroscopy. The results are thus of general importance, suggesting that hole- and electron-doped oxides may respond very differently to electrolyte gating. Reversible voltage control of electronic/magnetic properties is then demonstrated under hole accumulation, including resistivity, magnetoresistance, and TC. The sizable anomalous Hall coefficient and perpendicular anisotropy in LSCO provide a particularly powerful probe of magnetism, enabling direct extraction of the voltage-dependent order parameter and TC shift. The latter amounts to ∼7%, with potential for much stronger modulation at lower Sr doping.
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Affiliation(s)
- Jeff Walter
- Department of Chemical Engineering and Materials Science and ‡Characterization Facility, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Helin Wang
- Department of Chemical Engineering and Materials Science and ‡Characterization Facility, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Bing Luo
- Department of Chemical Engineering and Materials Science and ‡Characterization Facility, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - C Daniel Frisbie
- Department of Chemical Engineering and Materials Science and ‡Characterization Facility, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science and ‡Characterization Facility, University of Minnesota , Minneapolis, Minnesota 55455, United States
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29
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Valitova I, Kumar P, Meng X, Soavi F, Santato C, Cicoira F. Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors. ACS Appl Mater Interfaces 2016; 8:14855-14862. [PMID: 27193379 DOI: 10.1021/acsami.6b01922] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).
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Affiliation(s)
| | | | | | - Francesca Soavi
- Dipartimento di Chimica "Giacomo Ciamician", Università di Bologna , Via Selmi 2, Bologna 40126, Italy
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30
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Petach TA, Mehta A, Marks R, Johnson B, Toney MF, Goldhaber-Gordon D. Voltage-Controlled Interfacial Layering in an Ionic Liquid on SrTiO3. ACS Nano 2016; 10:4565-4569. [PMID: 26959226 DOI: 10.1021/acsnano.6b00645] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to an applied potential is poorly understood. We focus on the structure of 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl) trifluorophosphate (BMPY-FAP) near the surface of a strontium titanate (SrTiO3) electric double-layer transistor. Using X-ray reflectivity, we show that at positive bias the individual layers in the ionic liquid double layer thicken and the layering persists further away from the interface. We model the reflectivity using a modified distorted crystal model with alternating cation and anion layers, which allows us to extract the charge density and the potential near the surface. We find that the charge density is strongly oscillatory with and without applied potential and that with an applied gate bias of 4.5 V the first two layers become significantly more cation rich than at zero bias, accumulating about 2.5 × 10(13) cm(-2) excess charge density.
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Affiliation(s)
- Trevor A Petach
- Department of Physics, Stanford University , Palo Alto, California 94305, United States
| | - Apurva Mehta
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Ronald Marks
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Bart Johnson
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Michael F Toney
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
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31
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Lhuillier E, Scarafagio M, Hease P, Nadal B, Aubin H, Xu XZ, Lequeux N, Patriarche G, Ithurria S, Dubertret B. Infrared Photodetection Based on Colloidal Quantum-Dot Films with High Mobility and Optical Absorption up to THz. Nano Lett 2016; 16:1282-6. [PMID: 26753599 DOI: 10.1021/acs.nanolett.5b04616] [Citation(s) in RCA: 56] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Infrared thermal imaging devices rely on narrow band gap semiconductors grown by physical methods such as molecular beam epitaxy and chemical vapor deposition. These technologies are expensive, and infrared detectors remain limited to defense and scientific applications. Colloidal quantum dots (QDs) offer a low cost alternative to infrared detector by combining inexpensive synthesis and an ease of processing, but their performances are so far limited, in terms of both wavelength and sensitivity. Herein we propose a new generation of colloidal QD-based photodetectors, which demonstrate detectivity improved by 2 orders of magnitude, and optical absorption that can be continuously tuned between 3 and 20 μm. These photodetectors are based on the novel synthesis of n-doped HgSe colloidal QDs whose size can be tuned continuously between 5 and 40 nm, and on their assembly into solid nanocrystal films with mobilities that can reach up to 100 cm(2) V(-1) s(-1). These devices can be operated at room temperature with the same level of performance as the previous generation of devices when operated at liquid nitrogen temperature. HgSe QDs can be synthesized in large scale (>10 g per batch), and we show that HgSe films can be processed to form a large scale array of pixels. Taken together, these results pave the way for the development of the next generation mid- and far-infrared low-cost detectors and camera.
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Affiliation(s)
- Emmanuel Lhuillier
- Nexdot , 10 rue Vauquelin, 75005 Paris, France
- Institut des NanoSciences de Paris, UPMC-UMR CNRS 7588 , 4 place Jussieu, 75252 Paris CEDEX 05, France
| | - Marion Scarafagio
- Nexdot , 10 rue Vauquelin, 75005 Paris, France
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Patrick Hease
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Brice Nadal
- Nexdot , 10 rue Vauquelin, 75005 Paris, France
| | - Hervé Aubin
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Nicolas Lequeux
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures, LPN/UPR20-CNRS , Route de Nozay, 91460 Marcoussis, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
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Garlapati SK, Baby TT, Dehm S, Hammad M, Chakravadhanula VSK, Kruk R, Hahn H, Dasgupta S. Ink-Jet Printed CMOS Electronics from Oxide Semiconductors. Small 2015; 11:3591-6. [PMID: 25867029 DOI: 10.1002/smll.201403288] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2014] [Revised: 02/15/2015] [Indexed: 05/24/2023]
Abstract
Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technische Universität Darmstadt (TUD), Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany
| | - Tessy Theres Baby
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069, Ulm, Germany
| | - Simone Dehm
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mohammed Hammad
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Venkata Sai Kiran Chakravadhanula
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069, Ulm, Germany
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology, D-76021, Karlsruhe, Germany
| | - Robert Kruk
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technische Universität Darmstadt (TUD), Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany
- Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069, Ulm, Germany
| | - Subho Dasgupta
- Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
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Lhuillier E, Dayen JF, Thomas DO, Robin A, Doudin B, Dubertret B. Nanoplatelets bridging a nanotrench: a new architecture for photodetectors with increased sensitivity. Nano Lett 2015; 15:1736-42. [PMID: 25650627 DOI: 10.1021/nl504414g] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Interparticle charge hopping severely limits the integration of colloidal nanocrystals films for optoelectronic device applications. We propose here to overcome this problem by using high aspect ratio interconnects made of wide electrodes separated by a few tens of namometers, a distance matching the size of a single nanoplatelet. The semiconducting CdSe/CdS nanoplatelet coupling with such electrodes allows an efficient electron-hole pair dissociation despite the large binding energy of the exciton, resulting in optimal photoconductance responsivity. We report the highest responsivity obtained so far for CdSe colloidal material with values reaching kA·W(-1), corresponding to eight decades of enhancement compared to usual micrometer-scaled architectures. In addition, a decrease of 1 order of magnitude of the current noise is observed, revealing the reduced influence of the surface traps on transport. The nanotrench geometry provides top access to ion gel electrolyte gating, allowing for a photoresponsive transistor with 10(4) on/off ratio. A simple analytical model reproduces the device behavior and underlines the key parameters related to its performance.
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Jeong J, Aetukuri NB, Passarello D, Conradson SD, Samant MG, Parkin SS. Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating. Proc Natl Acad Sci U S A 2015; 112:1013-8. [PMID: 25583517 DOI: 10.1073/pnas.1419051112] [Citation(s) in RCA: 79] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
The use of electric fields to alter the conductivity of correlated electron oxides is a powerful tool to probe their fundamental nature as well as for the possibility of developing novel electronic devices. Vanadium dioxide (VO2) is an archetypical correlated electron system that displays a temperature-controlled insulating to metal phase transition near room temperature. Recently, ionic liquid gating, which allows for very high electric fields, has been shown to induce a metallic state to low temperatures in the insulating phase of epitaxially grown thin films of VO2. Surprisingly, the entire film becomes electrically conducting. Here, we show, from in situ synchrotron X-ray diffraction and absorption experiments, that the whole film undergoes giant, structural changes on gating in which the lattice expands by up to ∼3% near room temperature, in contrast to the 10 times smaller (∼0.3%) contraction when the system is thermally metallized. Remarkably, these structural changes are fully reversible on reverse gating. Moreover, we find these structural changes and the concomitant metallization are highly dependent on the VO2 crystal facet, which we relate to the ease of electric-field-induced motion of oxygen ions along chains of edge-sharing VO6 octahedra that exist along the (rutile) c axis.
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Xie W, Liu F, Shi S, Ruden PP, Frisbie CD. Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs). Adv Mater 2014; 26:2527-2532. [PMID: 24496822 DOI: 10.1002/adma.201304946] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2013] [Revised: 11/11/2013] [Indexed: 06/03/2023]
Abstract
A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 10(13) cm(-2) in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.
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Affiliation(s)
- Wei Xie
- Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE, Minneapolis, MN, 55455, USA
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Bisri SZ, Piliego C, Gao J, Loi MA. Outlook and emerging semiconducting materials for ambipolar transistors. Adv Mater 2014; 26:1176-99. [PMID: 24591008 DOI: 10.1002/adma.201304280] [Citation(s) in RCA: 102] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2013] [Indexed: 05/12/2023]
Abstract
Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection.
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Affiliation(s)
- Satria Zulkarnaen Bisri
- Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
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Bisri SZ, Piliego C, Yarema M, Heiss W, Loi MA. Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals. Adv Mater 2013; 25:4309-14. [PMID: 23580404 DOI: 10.1002/adma.201205041] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2012] [Revised: 02/22/2013] [Indexed: 05/20/2023]
Abstract
PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.
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Affiliation(s)
- Satria Zulkarnaen Bisri
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
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