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Song W, Sun Y, He X, Li S. Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35323-35332. [PMID: 38946487 DOI: 10.1021/acsami.4c06060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top-down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their optical and electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) on patterned Si substrates, devoid of any catalyst. These GaN TPAs feature highly ordered, large-scale structures, attributed to the utilization of 3D Si substrates and thin AlN interlayers to alleviate epitaxial strains and limit dislocation formation. Comprehensive characterization via scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and cathodoluminescence attests to the superior structural and optical attributes of these crystals. Furthermore, photoluminescence and ultraviolet (UV)-visible diffuse reflectance spectroscopy reveal sharp band-edge emission and significant light trapping in the UV bands. Employing these GaN TPAs, we constructed metal-semiconductor-metal visible-blind UV photodetectors (PDs) incorporating Ti3C2 MXene as Schottky electrodes. These PDs display exceptional responsivity, achieving 5.32 × 103 mA/W at 255 nm and an ultrahigh UV/visible rejection ratio (R255nm/R450nm) approaching 106, which are 1-2 orders of magnitude higher than most recently reported works. This exploration showcases novel GaN-based microstructures characterized by uniformity, ordered geometry, and exemplary crystalline integrity, paving the way for developing optoelectronic applications.
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Affiliation(s)
- Weidong Song
- College of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China
- Jiangmen Key Laboratory of Micro-Nano Functional Materials and Devices, Jiangmen 529020, China
| | - Yiming Sun
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
| | - Xin He
- College of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China
- Jiangmen Key Laboratory of Micro-Nano Functional Materials and Devices, Jiangmen 529020, China
| | - Shuti Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
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Gao Y, Yang J, Ji X, He R, Yan J, Wang J, Wei T. Semipolar (112̅2) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21232-21241. [PMID: 35486957 DOI: 10.1021/acsami.2c03636] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The high-quality semipolar (112̅2) AlGaN epitaxial films have been obtained on m-plane sapphire by metal-organic chemical vapor deposition. X-ray rocking curve measurements show the full-width at half-maximums of semipolar (112̅2)-oriented AlGaN films are 0.357° and 0.531° along [112̅3̅]AlGaN and [11̅00]AlGaN, respectively. The fabricated semipolar AlGaN metal-semiconductor-metal solar-blind ultraviolet (UV) photodetector (PD) exhibits a high responsivity of 1842 A/W. The fast response and reliability of the UV PD are ensured via fast switching with a rise and decay time of 90 ms and 53(720) ms, respectively. The UV PD exhibits a significant reduction in the dark current, that is, from 100 μA to 780 fA at 10 V, using a simple wet chemical etching to modify the surface properties of materials. The photo-to-dark-current ratio value of the etched UV PD reaches 4 orders of magnitude higher than the unetched UV PD under 270 nm illumination. These are attributed to the fact that KOH wet etching assists in eliminating the surface states and reconstructing the surface oxides. This work might provide a new potential for the development of solar-blind UV PDs with high performance.
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Affiliation(s)
- Yaqi Gao
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Jiankun Yang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Xiaoli Ji
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Rui He
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Jianchang Yan
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Junxi Wang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Tongbo Wei
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
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Abstract
Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.
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Lin S, Kulkarni R, Mandavkar R, Habib MA, Burse S, Kunwar S, Lee J. Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application. CrystEngComm 2022. [DOI: 10.1039/d2ce00367h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Sharply improved photoresponse characteristics are demonstrated by the multi-metallic AgCu, AuCu and AgAuCu NP based UV-PDs through the superior photo carrier injection by the strong elemental composition-dependent hot electrons and localized surface plasmon resonance (LSPR).
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Affiliation(s)
- Shusen Lin
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Rakesh Kulkarni
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Rutuja Mandavkar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Md Ahasan Habib
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Shalmali Burse
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
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Pasupuleti KS, Reddeppa M, Park BG, Peta KR, Oh JE, Kim SG, Kim MD. Ag Nanowire-Plasmonic-Assisted Charge Separation in Hybrid Heterojunctions of Ppy-PEDOT:PSS/GaN Nanorods for Enhanced UV Photodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54181-54190. [PMID: 33200919 DOI: 10.1021/acsami.0c16795] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The surface states, poor carrier life, and other native defects in GaN nanorods (NRs) limit their utilization in high-speed and large-gain ultraviolet (UV) photodetection applications. Making a hybrid structure is one of the finest strategies to overcome such impediments. In this work, a polypyrrole (Ppy)-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/GaN NRs hybrid structure is introduced for self-powered UV photodetection applications. This hybrid structure yields high photodetection performance, while pristine GaN NRs showed negligible photodetection properties. The ability of the photodetector is further boosted by functionalizing the hybrid structure with Ag nanowires (NWs). The Ag NWs-functionalized hybrid structure exhibited a responsivity of 3.1 × 103 (A/W), detectivity of 3.19 × 1014 Jones, and external quantum efficiency of 1.06 × 106 (%) under a UV illumination of λ = 382 nm. This high photoresponse is due to the huge photon absorption rising from the localized surface plasmonic effect of a Ag NWs network. Also, the Ag NWs significantly improved the rising and falling times, which were noted to be 0.20 and 0.21 s, respectively. The model band diagram was proposed with the assistance of X-ray photoelectron spectroscopy to explore the origin of the superior performance of the Ag NWs-decorated Ppy-PEDOT:PSS/GaN NRs photodetector. The proposed hybrid structure seems to be a promising candidate for the development of high-performance UV photodetectors.
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Affiliation(s)
| | - Maddaka Reddeppa
- Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Byung-Guon Park
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Koteswara Rao Peta
- Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021, India
| | - Jae-Eung Oh
- School of Electrical and Computer Engineering, Hangyang University, Ansan 15588, Republic of Korea
| | - Song-Gang Kim
- Department of Information and Communications, Joongbu University, 305 Donghen-ro, Goyang, Kyunggi-do 10279, Republic of Korea
| | - Moon-Deock Kim
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
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Dubey A, Mishra R, Hsieh Y, Cheng C, Wu B, Chen L, Gwo S, Yen T. Aluminum Plasmonics Enriched Ultraviolet GaN Photodetector with Ultrahigh Responsivity, Detectivity, and Broad Bandwidth. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002274. [PMID: 33344129 PMCID: PMC7740085 DOI: 10.1002/advs.202002274] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Revised: 08/17/2020] [Indexed: 05/30/2023]
Abstract
Plasmonics have been well investigated on photodetectors, particularly in IR and visible regimes. However, for a wide range of ultraviolet (UV) applications, plasmonics remain unavailable mainly because of the constrained optical properties of applicable plasmonic materials in the UV regime. Therefore, an epitaxial single-crystalline aluminum (Al) film, an abundant metal with high plasma frequency and low intrinsic loss is fabricated, on a wide bandgap semiconductive gallium nitride (GaN) to form a UV photodetector. By deliberately designing a periodic nanohole array in this Al film, localized surface plasmon resonance and extraordinary transmission are enabled; hence, the maximum responsivity (670 A W-1) and highest detectivity (1.48 × 1015 cm Hz1/2 W-1) is obtained at the resonance wavelength of 355 nm. In addition, owing to coupling among nanoholes, the bandwidth expands substantially, encompassing the entire UV range. Finally, a Schottky contact is formed between the single-crystalline Al nanohole array and the GaN substrate, resulting in a fast temporal response with a rise time of 51 ms and a fall time of 197 ms. To the best knowledge, the presented detectivity is the highest compared with those of other reported GaN photodetectors.
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Affiliation(s)
- Abhishek Dubey
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
| | - Ragini Mishra
- Institute of NanoEngineering and MicroSystemsNational Tsing Hua UniversityHsinchu300Taiwan
| | - Yu‐Hung Hsieh
- Institute of NanoEngineering and MicroSystemsNational Tsing Hua UniversityHsinchu300Taiwan
- Research Centre for Applied ScienceAcademia SinicaTaipei115‐29Taiwan
| | - Chang‐Wei Cheng
- Department of PhysicsNational Tsing Hua UniversityHsinchu300Taiwan
| | - Bao‐Hsien Wu
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
| | - Lih‐Juann Chen
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
| | - Shangjr Gwo
- Institute of NanoEngineering and MicroSystemsNational Tsing Hua UniversityHsinchu300Taiwan
- Research Centre for Applied ScienceAcademia SinicaTaipei115‐29Taiwan
- Department of PhysicsNational Tsing Hua UniversityHsinchu300Taiwan
| | - Ta‐Jen Yen
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
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Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe 2 and MoS 2: A Review. MICROMACHINES 2020; 11:mi11080750. [PMID: 32751953 PMCID: PMC7465435 DOI: 10.3390/mi11080750] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Revised: 07/26/2020] [Accepted: 07/28/2020] [Indexed: 01/30/2023]
Abstract
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.
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Cai Y, Shen S, Zhu C, Zhao X, Bai J, Wang T. Nonpolar (112̅0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25031-25036. [PMID: 32374591 PMCID: PMC7304820 DOI: 10.1021/acsami.0c04890] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2020] [Accepted: 05/06/2020] [Indexed: 05/25/2023]
Abstract
This article reports a nonpolar GaN metal-semiconductor-metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112̅0) GaN stripe arrays with a major improvement in crystal quality grown on patterned (110) silicon substrates by means of using our two-step processes. Our nonpolar GaN MSM-PD exhibits a responsivity of 695.3 A/W at 1 V bias and 12628.3 A/W at 5 V bias, both under 360 nm ultraviolet illumination, which are more than 20 times higher and 4 orders of magnitude higher compared to the current state-of-the-art photodetector, respectively. The nonpolar GaN MSM-PD displays a rise time and a fall time of 66 and 43 μs, respectively, which are 3 orders of magnitude faster compared to the current state-of-the-art photodetector.
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Chowdhury AM, Chandan G, Pant R, Roul B, Singh DK, Nanda KK, Krupanidhi SB. Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector. ACS APPLIED MATERIALS & INTERFACES 2019; 11:10418-10425. [PMID: 30786709 DOI: 10.1021/acsami.8b22569] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n+ type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n+-InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination. The maximum response of this self-powered photodetector is observed at 580 nm for low-intensity irradiance (0.1 mW/cm2), owing to the deep donor states present near the InGaN/AlN interface. It shows a responsivity of 9.64 A/W with rise and fall times of 19.9 and 21.4 μs, respectively. A relation between the open circuit voltage and the responsivity has been realized.
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Affiliation(s)
- Arun Malla Chowdhury
- Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India
| | - Greeshma Chandan
- Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India
| | - Rohit Pant
- Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India
| | - Basanta Roul
- Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India
- Central Research Laboratory , Bharat Electronics , Bangalore 560013 , India
| | | | - K K Nanda
- Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India
| | - S B Krupanidhi
- Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India
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