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Chang TC, Liao CY, Lee CT, Lee HY. Investigation of the Performance of Perovskite Solar Cells with ZnO-Covered PC 61BM Electron Transport Layer. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5061. [PMID: 37512335 PMCID: PMC10385327 DOI: 10.3390/ma16145061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 07/13/2023] [Accepted: 07/14/2023] [Indexed: 07/30/2023]
Abstract
Due to its high carrier mobility and electron transmission, the phenyl-C61-butyric acid methyl ester (PC61BM) is usually used as an electron transport layer (ETL) in perovskite solar cell (PSC) configurations. However, PC61BM films suffer from poor coverage on perovskite active layers because of their low solubility and weak adhesive ability. In this work, to overcome the above-mentioned shortcomings, 30 nm thick PC61BM ETLs with different concentrations were modeled. Using a 30 nm thick PC61BM ETL with a concentration of 50 mg/mL, the obtained performance values of the PSCs were as follows: an open-circuit voltage (Voc) of 0.87 V, a short-circuit current density (Jsc) of 20.44 mA/cm2, a fill factor (FF) of 70.52%, and a power conversion efficiency (PCE) of 12.54%. However, undesired fine cracks present on the PC61BM surface degraded the performance of the resulting PSCs. To further improve performance, multiple different thicknesses of ZnO interface layers were deposited on the PC61BM ETLs to release the fine cracks using a thermal evaporator. In addition to the pavement of fine cracks, the ZnO interface layer could also function as a hole-blocking layer due to its larger highest occupied molecular orbital (HOMO) energy level. Consequently, the PCE was improved to 14.62% by inserting a 20 nm thick ZnO interface layer in the PSCs.
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Affiliation(s)
- Ting-Chun Chang
- Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan
| | - Chen-Yi Liao
- Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan
| | - Ching-Ting Lee
- Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan
- Department of Electrical Engineering, Yuan Ze University, Taoyuan 320, Taiwan
| | - Hsin-Ying Lee
- Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan
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2
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Valluvar Oli A, Li Z, Chen Y, Ivaturi A. Near-Ultraviolet Indoor Black Light-Harvesting Perovskite Solar Cells. ACS APPLIED ENERGY MATERIALS 2022; 5:14669-14679. [PMID: 36590877 PMCID: PMC9795417 DOI: 10.1021/acsaem.2c01560] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2022] [Accepted: 11/03/2022] [Indexed: 05/26/2023]
Abstract
Indoor light-energy-harvesting solar cells have long-standing history with perovskite solar cells (PSCs) recently emerging as potential candidates with high power conversion efficiencies (PCEs). However, almost all of the reported studies on indoor light-harvesting solar cells utilize white light in the visible wavelength. Low wavelength near-ultraviolet (UV) lights used under indoor environments are not given attention despite their high photon energy. In this study, perovskite solar cells have been investigated for the first time for harvesting energy from a commercially available near-UV (UV-A) indoor LED light (395-400 nm). Also called black lights, these near-UV lights are commonly used for decoration (e.g., in bars, pubs, aquariums, parties, clubs, body art studios, neon lights, and Christmas and Halloween decorations). The optimized perovskite solar cells with the n-i-p architecture using the CH3NH3PbI3 absorber were fabricated and characterized under different illumination intensities of near-UV indoor LEDs. The champion devices delivered a PCE and power output of 20.63% and 775.86 μW/cm2, respectively, when measured under UV illumination of 3.76 mW/cm2. The devices retained 84.10% of their initial PCE when aged under near-UV light for 24 h. The effects of UV exposure on the device performance have been comprehensively characterized. Furthermore, UV-stable solar cells fabricated with a modified electron transport layer retained 95.53% of its initial PCE after 24 h UV exposure. The champion devices delivered enhanced PCE and power output of 26.19% and 991.21 μW/cm2, respectively, when measured under UV illumination of 3.76 mW/cm2. This work opens up a novel direction for energy harvesting from near-UV indoor light sources for applications in microwatt-powered electronics such as internet of things sensors.
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Affiliation(s)
- Arivazhagan Valluvar Oli
- Smart
Materials Research and Device Technology (SMaRDT) Group, Department
of Pure and Applied Chemistry, University
of Strathclyde, Thomas Graham Building, Glasgow G1 1XL, U.K.
| | - Zinuo Li
- Department
of Physics, University of Strathclyde, Glasgow G4 0RE, U.K.
| | - Yu Chen
- Department
of Physics, University of Strathclyde, Glasgow G4 0RE, U.K.
| | - Aruna Ivaturi
- Smart
Materials Research and Device Technology (SMaRDT) Group, Department
of Pure and Applied Chemistry, University
of Strathclyde, Thomas Graham Building, Glasgow G1 1XL, U.K.
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3
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Recent progress in perovskite solar cells: material science. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1445-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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Meng F, Shang X, Gao D, Zhang W, Chen C. Functionalizing phenethylammonium by methoxy to achieve low-dimensional interface defects passivation for efficient and stable perovskite solar cells. NANOTECHNOLOGY 2021; 33:065201. [PMID: 34706349 DOI: 10.1088/1361-6528/ac33d5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Accepted: 10/27/2021] [Indexed: 06/13/2023]
Abstract
Low dimensional interface passivation has been proved to be an efficient method to lessen the nonradiative recombination loss in perovskite solar cells. To overcome the limitation of Phenethylammonium (PEA+) for carrier transport and water molecule intrusion, we developed a modification strategy by functioning the typical PEA+with the 4-methoxy to optimize the interface defects and carrier transport performance, thus maximizing the synchronous improvement of device efficiency and stability. Our results indicate that the 2 mg ml-14-methoxy-phenethylammonium (MeO-PEA+) modified device could achieve a best power conversion efficiency of 19.64% with improved shelf-life stability in ambient conditions. The new passivation molecule of MeO-PEA+could possess the capability of defect passivation, carrier transfer, and moisture blocking, demonstrating that rationally designed organic components for interface passivation could help to achieve efficient and stable PSCs.
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Affiliation(s)
- Fanbin Meng
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China
| | - Xueni Shang
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China
| | - Deyu Gao
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China
| | - Wei Zhang
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China
| | - Cong Chen
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China
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5
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Xing W, Yao Q, Zhu W, Jiang H, Zhang X, Ji Y, Shao J, Xiong W, Wang B, Zhang B, Luo X, Zheng Y. Donor-Acceptor Competition via Halide Vacancy Filling for Oxygen Detection of High Sensitivity and Stability by All-Inorganic Perovskite Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102733. [PMID: 34477301 DOI: 10.1002/smll.202102733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Revised: 07/01/2021] [Indexed: 06/13/2023]
Abstract
Oxygen detection by organic-inorganic halide perovskites (OIHPs) has demonstrated advantages in operating temperature, response time, and reversibility over traditional materials. However, OIHPs can only sense O2 in light and the unavoidable O2 exposure during detection easily induces the degradation of OIHPs. The trade-off between sensitivity and stability makes the OIHP-based oxygen sensors impractical. By replacing organic groups with Cs, the compact films of all-inorganic halide perovskites (AIHPs) that can adsorb O2 at grain boundaries in dark are developed. AIHPs show conductance increase of 1875.5% from 1 × 10-5 to 700 Torr of O2 pressure, associated with full reversibility and long-term stability. Combining experiments and modeling, this work reveals the donor-acceptor competition via halide vacancy filling leading to the modulation of carrier concentration and mobility. This work offers understandings on oxygen sensing by perovskite materials and paves the way for further optimization of AIHPs as promising oxygen sensors with high sensitivity and stability.
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Affiliation(s)
- Weiwei Xing
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Qianqian Yao
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Wenpeng Zhu
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - He Jiang
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xiaoyue Zhang
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Ye Ji
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Jian Shao
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Weiming Xiong
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Biao Wang
- Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Bangmin Zhang
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xin Luo
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yue Zheng
- School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China
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Li D, Kong W, Zhang H, Wang D, Li W, Liu C, Chen H, Song W, Gao F, Amini A, Xu B, Li S, Cheng C. Bifunctional Ultrathin PCBM Enables Passivated Trap States and Cascaded Energy Level toward Efficient Inverted Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:20103-20109. [PMID: 32252523 DOI: 10.1021/acsami.0c02837] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Inverted perovskite solar cells (PSCs) with a C60 framework are known for their common drawback of low power conversion efficiency (PCE) of <20% because of nonradiative recombination and inefficient charge transport at their perovskite interfaces. Here, we report an ultrathin [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a cap layer on perovskite films to overcome this issue. Such a functional cap layer efficiently passivates trap states and establishes a gradient energy level alignment onto perovskite, facilitating the efficient charge transfer and extraction. The as-fabricated inverted PSCs capped with such ultrathin PCBM exhibit a record PCE of 20.07%. After the storage under a N2 atmosphere for more than 500 h, the PCE of PSCs retains over 85% of its initial level. Our work provides an effective method to upgrade inverted PSCs with the C60 framework with improved efficiency and stability.
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Affiliation(s)
- Dongyang Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Laboratory of Nanophotonic Functional Materials and Devices, Institute of Semiconductor, South China Normal University, Guangzhou 510631, P. R. China
| | - Weiguang Kong
- Hebei Key Laboratory of Optic-Electronic Information and Materials and National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Haichao Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Deng Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Wang Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Changwen Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Hong Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Weidong Song
- College of Applied Physics and Materials, Wuyi University, 22 Dongcheng Village, Jiangmen 529020, Guangdong, P. R. China
| | - Fangliang Gao
- Laboratory of Nanophotonic Functional Materials and Devices, Institute of Semiconductor, South China Normal University, Guangzhou 510631, P. R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 275, Australia
| | - Baomin Xu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Energy Materials for Electric Power, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Shuti Li
- Laboratory of Nanophotonic Functional Materials and Devices, Institute of Semiconductor, South China Normal University, Guangzhou 510631, P. R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Energy Materials for Electric Power, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
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7
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Ma W, Zhang X, Xu Z, Guo H, Lu G, Meng S. Reducing Anomalous Hysteresis in Perovskite Solar Cells by Suppressing the Interfacial Ferroelectric Order. ACS APPLIED MATERIALS & INTERFACES 2020; 12:12275-12284. [PMID: 32079393 DOI: 10.1021/acsami.9b20988] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Despite the booming research in organometal halide perovskite solar cells (PSCs) of recent years, considerable roadblocks remain for their large-scale deployment, ranging from undesirable current-voltage hysteresis to inferior device stability. Among various plausible origins of hysteresis, interfacial ferroelectricity is particularly intriguing and warrants a close scrutiny. Here, we examine interfacial ferroelectricity in MAPbI3 (FAPbI3)/TiO2 and MAPbI3/phenyl-C61-butyric-acid-methyl-ester (PCBM) heterostructures and explore the correlations between the interfacial ferroelectricity and the hysteresis from the perspective of nonadiabatic electronic dynamics. It is found that the ferroelectric order develops at the MAPbI3/TiO2 interface owing to the interaction between the polar MA ions and TiO2. The polarization switching of the MA ions under an applied gate field would drastically result in different rates in interfacial photoelectron injection and electron-hole recombination, contributing to the undesirable hysteresis. In sharp contrast, ferroelectricity is suppressed at the FAPbI3/TiO2 and MAPbI3/PCBM interfaces, thanks to elimination of the interfacial electric field between perovskite and TiO2 via substitution of strong polar MA (dipole moment: 2.29 debye) by weak polar FA ions (dipole moment: 0.29 debye) and interface passivation, leading to consistent interfacial electronic dynamics and the absence of hysteresis. The present work sheds light on the physical cause for hysteresis and points to the direction to which the hysteresis could be mitigated in PSCs.
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Affiliation(s)
- Wei Ma
- Ningxia Key Laboratory of Photovoltaic Materials, Ningxia University, Yinchuan 750021, People's Republic of China
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xu Zhang
- Department of Physics and Astronomy, California State University Northridge, Northridge, Los Angeles, California 91330-8268, United States
| | - Zhe Xu
- School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China
| | - Haizhong Guo
- School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China
| | - Gang Lu
- Department of Physics and Astronomy, California State University Northridge, Northridge, Los Angeles, California 91330-8268, United States
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Wang G, Wang L, Qiu J, Yan Z, Li C, Dai C, Zhen C, Tai K, Yu W, Jiang X. In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:7690-7700. [PMID: 31961639 DOI: 10.1021/acsami.9b18572] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Despite the rocketing rise in power conversion efficiencies (PCEs), the performance of perovskite solar cells (PSCs) is still limited by the carrier transfer loss at the interface between perovskite (PVSK) absorbers and charge transporting layers. Here, we propose a novel in situ passivation strategy by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) to improve the charge dynamics at the rear PVSK/CTL interface in the n-i-p structure device. A pre-deposited PCBM-doped PbI2 layer is redissolved during PVSK deposition in our routine, establishing a bottom-up PCBM gradient that is facile for charge extraction. Meanwhile, the surface defects are in situ-passivated via PCBM-PVSK interaction, which substantially suppresses the trap-assisted recombination at the rear interface. Due to the synergistic effect of charge-extraction promotion and trap passivation, the fabricated PSCs deliver a champion PCE of 20.10% with attenuated hysteresis and improved long-term stability, much higher than the 18.39% of the reference devices. Our work demonstrates a promising interfacial engineering strategy for further improving the performance of PSCs.
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Affiliation(s)
- Gaoxiang Wang
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
- School of Materials Science and Engineering , University of Science and Technology of China , Shenyang 110016 , China
| | - Lipeng Wang
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
- School of Materials Science and Engineering , University of Science and Technology of China , Shenyang 110016 , China
| | - Jianhang Qiu
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
| | - Zheng Yan
- College of Energy and Environment , Shenyang Aerospace University , Shenyang 110136 , China
| | - Changji Li
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
| | - Chunli Dai
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
| | - Chao Zhen
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
| | - Kaiping Tai
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
| | - Wei Yu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology , Hebei University , Baoding 071002 , China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016 , China
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