Phase-Separation-Induced Crystal Growth for Large-Grained Cu2ZnSn(S,Se)4 Thin Film

Enhance the Performance of CZTSSe Solar Cells Through Inhibiting the Cu2+, Tu, and (─COOH) Association Reaction

The Sol-gel precursor solution reaction mechanism has a significant impact on the Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. It is discovered that in the Cu2ZnSnS4 (CZTS) precursor solution (CZTS-PS) in the preparation, there is an association reaction among Cu2+, thiourea (Tu), and carboxyl (-COOH), which is an important reason for the undesirable CZTSSe solar cells. The strong association reaction generates excessive Cu2+ ions, forming the CuxSe secondary phase on the surface of the CZTSSe absorber. The secondary phase causes a short circuit and deterioration of gadget performance. Following a 6-h aging period for the CZTS-PS, the average photoelectric conversion efficiency (PCE) of the device is enhanced to 8.02%, and there is also an improvement in device uniformity, as evidenced by a decrease in the standard deviation to less than 1. To inhibit the association reaction and eliminate the aging time phenomenon, a strategy is developed using hydrochloric acid to regulate the CZTS-PS environment. This strategy shifts the REDOX reaction in Cu2++Sn2+ toward the formation of Cu1++Sn4+, leading to a decrease in the defect concentrations of VSn(-/0) and CuSn(-/0), which increases the carrier concentration and reduces the impact of band tailing. The average power conversion efficiency (PCE) of the devices improved from 7.45% to 9.26%, the PCE of the best-performing CZTSSe solar cells increased from 9.25% to 9.83%, and the consistency among the devices is further enhanced, as indicated by a reduction in the standard deviation from 0.98 to 0.44. Ultimately, the device performance of the Cu2++Sn2+-DMF system improved by 11.01% (without the MgF2 layer) after optimization. This study serves as a reference for regulating the environment of the CZTS-PS to further enhance the CZTSSe devices' performance, and the photoelectric conversion efficiency is improved by ≈30%.

Controlling Selenization Equilibrium Enables High-Quality Kesterite Absorbers for Efficient Solar Cells

Kesterite Cu2ZnSn(S, Se)4 is considered one of the most competitive photovoltaic materials due to its earth-abundant and nontoxic constituent elements, environmental friendliness, and high stability. However, the preparation of high-quality Kesterite absorbers for photovoltaics is still challenging for the uncontrollability and complexity of selenization reactions between metal element precursors and selenium. In this study, we propose a solid-liquid/solid-gas (solid precursor and liquid/vapor Se) synergistic reaction strategy to precisely control the selenization process. By pre-depositing excess liquid selenium, we provide the high chemical potential of selenium to facilitate the direct and rapid formation of the Kesterite phase. The further optimization of selenium condensation and subsequent volatilization enables the efficient removal of organic compounds and thus improves charge transport in the absorber film. As a result, we achieve high-performance Kesterite solar cells with total-area efficiency of 13.6% (certified at 13.44%) and 1.09 cm2-area efficiency of 12.0% (certified at 12.1%).

Progress and prospectives of solution-processed kesterite absorbers for photovoltaic applications

Solar cells based on emerging kesterite Cu₂ZnSn(S,Se)₄ (CZTSSe) materials have reached certified power conversion efficiency (PCE) as high as 13.6%, showing great potential in the next generation of photovoltaic technologies because of their earth-abundant, tunable direct bandgap, high optical absorption coefficient, environment-friendly, and low-cost properties. The predecessor of CZTSSe is Cu(In,Ga) Se₂ (CIGS), and the highest PCE of CIGS fabricated by the vacuum method is 23.35%. However, the recorded PCE of CZTSSe devices are fabricated by a low-cost solution method. The characteristics of the solvent play a key role in determining the crystallization kinetics, crystal growth quality, and optoelectronic properties of the CZTSSe thin films in the solution method. It is still challenging to improve the efficiency of CZTSSe solar cells for future commercialization and applications. This review describes the current status of CZTSSe solar cell absorbers fabricated by protic solvents with NH (hydrazine), protic solvents with SH (amine-thiol), aprotic solvents (DMSO and DMF), ethylene glycol methyl ether-based precursor solution method (EGME), and thioglycolic acid (TGA)-ammonia solution (NH₃H₂O) deposition methods. Furthermore, the performances of vacuum-deposited devices and solution-based processed devices are compared. Finally, the challenges and outlooks of CZTSSe solar cells are discussed for further performance improvement.

Large-Grain Spanning Monolayer Cu2 ZnSnSe4 Thin-Film Solar Cells Grown from Metal Precursor

The persistent double layer structure whereby two layers with different properties form at the front and rear of absorbers is a critical challenge in the field of kesterite thin-film solar cells, which imposes additional nonradiative recombination in the quasi-neutral region and potential limitation to the transport of hole carriers. Herein, an effective model for growing monolayer CZTSe thin-films based on metal precursors with large grains spanning the whole film is developed. Voids and fine grain layer are avoided successfully by suppressing the formation of a Sn-rich liquid metal phase near Mo back contact during alloying, while grain coarsening is greatly promoted by enhancing mass transfer during grain growth. The desired morphology exhibits several encouraging features, including significantly reduced recombination in the quasi-neutral region that contributes to the large increase of short-circuit current, and a quasi-Ohmic back contact which is a prerequisite for high fill factor. Though this growth mode may introduce more interfacial defects which require further modification, the strategies demonstrated remove a primary obstacle toward higher efficiency kesterite solar cells, and can be applicable to morphology control with other emerging chalcogenide thin films.

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells

The post-heating treatment of the CZTSSe/CdS heterojunction can enhance the interfacial properties of kesterite Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells. In this regard, a two-step annealing method was developed to enhance the heterojunction quality for the first time. That is, a low-temperature (90 °C) process was introduced before the high-temperature treatment, and 12.3% efficiency of CZTSSe solar cells was achieved. Further investigation revealed that the CZTSSe/CdS heterojunction band alignment with a smaller spike barrier can be realized by the two-step annealing treatment, which assisted in carrier transportation and reduced the charge recombination loss, thus enhancing the open-circuit voltage (V_OC) and fill factor (FF) of the devices. In addition, the two-step annealing could effectively avoid the disadvantages of direct high-temperature treatment (such as more pinholes on CdS films and excess element diffusion), improve the CdS crystallization, and decrease the defect densities within the device, especially interfacial defects. This work provides an effective method to improve the CZTSSe/CdS heterojunction properties for efficient kesterite solar cells.

Significantly Improving the Crystal Growth of a Cu2ZnSn(S,Se)4 Absorber Layer by Air-Annealing a Cu2ZnSnS4 Precursor Thin Film

The crystal quality of a Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film is crucially important to a high-performance CZTSSe solar cell. After selenization, a bilayer CZTSSe thin film consisting of a large-grain top layer and a small-particle bottom layer is usually observed according to the literature. In this work, a facile air-annealing pretreatment is conducted for a Cu₂ZnSnS₄ precursor thin film prior to selenization, which can lead to sodium diffusion into the CZTS precursor thin film and surface oxidization of the CZTS thin film. Our experimental results revealed that the Na prediffusion and the surface oxidation of the CZTS precursor thin film can significantly promote the crystal growth of the CZTSSe thin film, which can completely remove the small-particle bottom layer and form a large-grain-spanned CZTSSe thin film. As a result, a photoelectric conversion efficiency of 9.80% was achieved by this method.

Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)4 Thin-Film Solar Cells

For further efficiency improvement in kesterite-type Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells, it is essential to address the carrier recombination issue at the back electrode interface (BEI) caused by the undesirable built-in potential orientation toward an absorber as an n-MoSe₂ interfacial layer formed. In this regard, back surface field (BSF) incorporation, i.e., field-effect passivation, shows promise for dealing with this issue due to its positive effect in decreasing recombination at the BEI. In this study, the BSF was realized with the p-type conduction transition in interfacial layer MoSe₂ by incorporating Nb into the back electrode. The BSF width can be tuned via modulating the carrier concentration of the absorber, which has been demonstrated by capacitance-voltage characterization. A beyond 7% efficiency BSF-applied CZTSSe solar cell is prepared, and the effects of a tunable BSF and the mechanism underpinning device performance improvement have been investigated in detail. The wider BSF distribution in the absorber induces a decrease in reverse saturation current density (J₀) due to the stronger BSF effect in suppressing BEI recombination. As a result, an accompanying increase in open-circuit voltage (V_OC) and short-circuit current density (J_SC) is achieved as compared to the BSF-free case. This study offers an alternative strategy to address the BEI recombination issue and also broadens the interface passivation research scope of potentially competitive kesterite solar cells.

Enhancing Grain Growth for Efficient Solution-Processed (Cu,Ag)2ZnSn(S,Se)4 Solar Cells Based on Acetate Precursor

Material crystallinity is the overriding factor in the determination of the photoelectric properties of absorber materials and the overall performance of the photovoltaic device. Nevertheless, in the Cu₂ZnSn(S,Se)₄ (CZTSSe) photovoltaic device, the bilayer or trilayer structure for the absorber has been broadly observed, which is generally harmful to the cell performance because the probability of photogenerated carrier recombination at grain boundaries significantly increased. Herein, our experiment reveals that the application of anions to a new family of (Cu,Ag)₂ZnSn(S,Se)₄ (CAZTSSe) materials leads to an increase in grain size and crystallinity. It is inspiring that using acetate starting materials in the precursor solution, a uniform, compact, and pinhole-free CAZTS precursor film was obtained, and the smoothness of the films surpassed that of films fabricated from the oxide route. More importantly, the crystallization of the CAZTSSe film has been considerably enhanced after selenization, and large grains going through the entire absorber layer was successfully obtained. Additionally, it is observed that the V_oc accompanied by excellent crystallinity improved significantly due to the pronouncedly reduced carrier recombination loss at grain boundaries. As a consequence, the power conversion efficiency (PCE) of the CAZTSSe photovoltaic device is successfully increased from 10.35% (oxide route) to 11.32% (acetate route). Importantly, our work attests to the feasibility of tuning the crystallization of the CZTSSe film by simple chemistry.