Wavelength-Tunable Band-Edge Photoluminescence of Nonstoichiometric Ag-In-S Nanoparticles via Ga3+ Doping

Spectrally narrow band-edge photoluminescence from AgInS2-based core/shell quantum dots for electroluminescence applications

This study presents a facile synthesis of cadmium-free ternary and quaternary quantum dots (QDs) and their application to light-emitting diode (LED) devices. AgInS2 ternary QDs, developed as a substitute for cadmium chalcogenide QDs, exhibited spectrally broad photoluminescence due to intrinsic defect levels. Our group has successfully achieved narrow band-edge PL by a coating with gallium sulfide shell. Subsequently, an intrinsic difficulty in the synthesis of multinary compound QDs, which often results in unnecessary byproducts, was surmounted by a new approach involving the nucleation of silver sulfide followed by material conversion to the intended composition (silver indium gallium sulfide). By fine-tuning this reaction and bringing the starting material closer to stoichiometric compositional ratios, atom economy was further improved. These QDs have been tested in LED applications, but the standard device encountered a significant defective emission that would have been eliminated by the gallium sulfide shells. This problem is addressed by introducing gallium oxide as a new electron transport layer.

One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping

I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.

Eco-Friendly Zn-Ag-In-Ga-S Quantum Dots: Amorphous Indium Sulfide Passivated Silver/Sulfur Vacancies Achieving Efficient Red Light-Emitting Diodes

I-III-VI quantum dots (QDs) and derivatives (I, III, and VI are Ag+/Cu+, Ga3+/In3+, and S2-/Se2-, respectively) are the ideal candidates to replace II-VI (e.g., CdSe) and perovskite QDs due to their nontoxicity, pure color, high photoluminescence quantum yield (PLQY), and full visible coverage. However, the chaotic cation alignment in multielement systems can easily lead to the formation of multiple surface vacancies, highlighted as VI and VVI, leading to nonradiative recombination and nonequilibrium carrier distribution, which severely limit the performance improvement of materials and devices. Here, based on Zn-Ag-In-Ga-S QDs, we construct an ultrathin indium sulfide shell that can passivate electron vacancies and convert donor/acceptor level concentrations. The optimized In-rich 2-layer indium sulfide structure not only enhances the radiative recombination rate by preventing further VS formation but also achieves the typical DAP emission enhancement, achieving a significant increase in PLQY to 86.2% at 628 nm. Moreover, the optimized structure can mitigate the lattice distortion and make the carrier distribution in the interior of the QDs more balanced. On this basis, red QD light-emitting diodes (QLEDs) with the highest external quantum efficiency (EQE; 5.32%) to date were obtained, providing a novel scheme for improving I-III-VI QD-based QLED efficiency.

Coherent heteroepitaxial growth of I-III-VI2 Ag(In,Ga)S2 colloidal nanocrystals with near-unity quantum yield for use in luminescent solar concentrators

Colloidal Ag(In,Ga)S₂ nanocrystals (AIGS NCs) with the band gap tunability by their size and composition within visible range have garnered surging interest. High absorption cross-section and narrow emission linewidth of AIGS NCs make them ideally suited to address the challenges of Cd-free NCs in wide-ranging photonic applications. However, AIGS NCs have shown relatively underwhelming photoluminescence quantum yield (PL QY) to date, primarily because coherent heteroepitaxy has not been realized. Here, we report the heteroepitaxy for AIGS-AgGaS₂ (AIGS-AGS) core-shell NCs bearing near-unity PL QYs in almost full visible range (460 to 620 nm) and enhanced photochemical stability. Key to the successful growth of AIGS-AGS NCs is the use of the Ag-S-Ga(OA)₂ complex, which complements the reactivities among cations for both homogeneous AIGS cores in various compositions and uniform AGS shell growth. The heteroepitaxy between AIGS and AGS results in the Type I heterojunction that effectively confines charge carriers within the emissive core without optically active interfacial defects. AIGS-AGS NCs show higher extinction coefficient and narrower spectral linewidth compared to state-of-the-art heavy metal-free NCs, prompting their immediate use in practicable applications including displays and luminescent solar concentrators (LSCs).

Detection of enrofloxacin residues in dairy products based on their fluorescence quenching effect on AgInS2 QDs

Water-soluble AgInS₂ (AIS) quantum dots (QDs) were successfully prepared through the one-pot water phase method with thioglycolic acid (TGA) as the stabilizing agent. Because enrofloxacin (ENR) effectively quenches the fluorescence of AIS QDs, a highly-sensitive fluorescence detection method is proposed to detect ENR residues in milk. Under optimal detection conditions, there was a good linear relationship between the relative fluorescence quenching amount (ΔF/F₀) of AgInS₂ with ENR and ENR concentration (C). The detection range was 0.3125-20.00 μg/mL, r = 0.9964, and the detection limit (LOD) was 0.024 μg/mL (n = 11). The average recovery of ENR in milk ranged from 95.43 to 114.28%. The method established in this study has advantages including a high sensitivity, a low detection limit, simple operation and a low cost. The fluorescence quenching mechanism of AIS QDs with ENR was discussed and the dynamic quenching mechanism of light-induced electron transfer was proposed.

I-III-VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I-III-VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I-III-VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I-III-VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

Luminescent AgGaSe2/ZnSe nanocrystals: rapid synthesis, color tunability, aqueous phase transfer, and bio-labeling application

The unique optoelectronic properties of I-III-VI₂ nanocrystals (NCs) have attracted extensive attention. Herein, element Se in oleylamine reduced by alkythiol, which has been demonstrated to generate highly reactive alkylammonium selenide, was selected as the Se precursor by us to successfully synthesize high-quality tetragonal AgGaSe₂ NCs via a facile colloidal method in just 2 minutes. Further, the photoluminescence (PL) properties of the as-synthesized AgGaSe₂ NCs were systematically optimized through utilizing one Zn precursor to integrate shell coating and anionic/cationic alloying strategies into our reactive system, resulting in not only the obvious improvement of PL intensity but also tunable PL color from blue to red. Furthermore, the ligand exchange approach was adopted for the aqueous phase transfer of the oleophilic AgGaSe₂/ZnSe NCs. Our data suggest that either metalated mercaptopropionic acid (Zn-MPA) short- or 11-mercaptoundecanoic acid long-chain ligand exchanged NCs all could maintain the original high crystallinity, present good water solubility, and retain up to nearly 95% and 70% of the initial PL intensity, respectively. Benefiting from the low cytotoxicity, the water-soluble AgGaSe₂/ZnSe NCs can be applied as a fluorescent probe in cell imaging and signal labels for the fluoroimmunoassay of prostate-specific antigen, implying their potential in biological application.

Quantum-Dot Light-Emitting Diodes Exhibiting Narrow-Spectrum Green Electroluminescence by Using Ag-In-Ga-S/GaSx Quantum Dots

Quantum dots (QDs), which have high color purity, are expected to be applied as emitting materials to wide-color-gamut displays. To enable their use as an alternative to Cd-based QDs, it is necessary to improve the properties of QDs composed of low-toxicity materials. Although multielement QDs such as Ag-In-Ga-S are prone to spectrally broad emission from defect sites, a core/shell structure covered with a GaS_x shell is expected to enable sharp emission from band-edge transitions. Here, QD light-emitting diodes (QD-LEDs) embedded with Ag-In-Ga-S/GaS_x core/shell QDs (AIGS QDs) were fabricated, and their electroluminescence (EL) was observed. The EL spectra from the AIGS QD-LEDs were found to contain a large defect-related emission component not observed in the photoluminescence (PL) spectra of the AIGS QD films. This defect-related emission was caused by electrons injected into defect sites in the QDs. Therefore, the AIGS QDs and the electron injection layer (EIL) of ZnMgO were treated with Ga compounds such as gallium chloride (GaCl₃) and gallium tris(N,N'-diethyldithiocarbamate) (Ga(DDTC)₃) to improve the luminescence properties of the QD-LEDs. The added Ga compounds effectively compensated for defect sites on the surface of the QDs and suppressed direct electron injection from the EIL into defect sites. As a result, the defect-related emission components in the EL were successfully suppressed, and the EL exhibited a color purity comparable to the PL of the AIGS QD films. The QD-LEDs exhibited EL spectra with a full width at half-maximum of 33 nm, which is extremely sharp for a low-toxicity QD, and the chromaticity coordinates (0.260, 0.695) for green EL were achieved.

Surface ligand chemistry on quaternary Ag(In x Ga1-x )S2 semiconductor quantum dots for improving photoluminescence properties

Ternary and quaternary semiconductor quantum dots (QDs) are candidates for cadmium-free alternatives. Among these, semiconductors containing elements from groups 11, 13, and 16 (i.e., I-III-VI₂) are attracting increasing attention since they are direct semiconductors whose bandgap energies in the bulk state are tunable between visible and near infrared. The quaternary system of alloys consisting of silver indium sulfide (AgInS₂; bandgap energy: E _g = 1.8 eV) and silver gallium sulfide (AgGaS₂; E _g = 2.4 eV) (i.e., Ag[In _x Ga_1-x ]S₂ (AIGS)) enables bandgap tuning over a wide range of visible light. However, the photoluminescence (PL) quantum yield (10-20%) of AIGS QDs is significantly lower than that of AgInS₂ (60-70%). The present study investigates how to improve the PL quantum yield of AIGS QDs via surface ligand engineering. Firstly, the use of a mixture of oleic acid and oleylamine, instead of only oleylamine, as the solvent for the QD synthesis was attempted, and a threefold improvement of the PL quantum yield was achieved. Subsequently, a post-synthetic ligand exchange was performed. Although the addition of alkylphosphine, which is known as an L-type ligand, improved the PL efficiency only by 20%, the use of metal halides, which are categorized as Z-type ligands, demonstrated a twofold to threefold improvement of the PL quantum yield, with the highest value reaching 73.4%. The same procedure was applied to the band-edge emitting core/shell-like QDs that were synthesized in one batch based on our previous findings. While the as-prepared core/shell-like QDs exhibited a PL quantum yield of only 9%, the PL quantum yield increased to 49.5% after treatment with metal halides.

Luminescent Quaternary Ag(InxGa1-x)S2/GaSy Core/Shell Quantum Dots Prepared Using Dithiocarbamate Compounds and Photoluminescence Recovery via Post Treatment

Cadmium-free quantum dots (QDs) consisting of silver-indium-gallium-sulfide (AIGS) quaternary semiconductors were successfully synthesized using a metal-dithiocarbamate complex with sufficiently high reactivity to produce metal sulfides. The introduction of a gallium diethyldithiocarbamate precursor decreased the reaction temperature to produce active intermediates, which were subsequently converted into AIGS QDs at 150 °C with silver and indium acetates. Because of the low reaction temperature, AIGS QDs with a tetragonal crystal phase were produced selectively, which favorably generated band-edge emission whose full width at half-maximum is smaller than 40 nm after they were coated with gallium sulfide (GaS_y) shells. The compositional indium/gallium ratio was varied by changing the mixing ratio of the precursors used for the synthesis of the AIGS core, and the band-edge photoluminescence (PL) generated from the AIGS/GaS_y core/shell QDs was blue-shifted with an increase in the gallium content in the core. Consequently, a pure green emission centered at 518 nm was obtained with a PL quantum yield as high as 68%.

Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes

With the blooming development of zero-dimensional nanomaterials, I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the V_defect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications.

One-Pot Synthesis of High-Quality AgGaS2/ZnS-based Photoluminescent Nanocrystals with Widely Tunable Band Gap

Herein, we present a facile colloidal method to synthesize the high-quality AgGaS₂ nanocrystals (NCs) within 2 min via exploiting the high-reactivity S precursor and then extend this synthetic strategy to the preparation of AgGaS₂/ZnS core-shell NCs by a one-pot method without prior purification of AgGaS₂ core. The as-synthesized samples were structurally characterized to confrim the formation of AgGaS₂/ZnS core-shell NCs. The energy band gap of the AgGaS₂/ZnS NCs can be effectively tunable from 2.98 to 2.83 eV by the control of their nonstoichiometry and further continuously decreases to 1.90 eV by the preparation of alloyed AgGa_xIn_1-xS₂/ZnS NCs (1 ≤ x ≤ 0). Benefitting from the efficient band gap modulations, the photoluminescence (PL) colors of the AgGaS₂-based NCs can cover almost the whole visible region from blue (460 nm) to red (671 nm). Our work demonstrates the one-pot synthesis of AgGaS₂/ZnS core-shell NCs and their band gap engineering, which is of crucial in scalability toward industrial application and in tailoring optical characteristics of I-III-VI₂ materials.

Colloidal synthesis of tunably luminescent AgInS-based/ZnS core/shell quantum dots as biocompatible nano-probe for high-contrast fluorescence bioimaging

Tremendous demands for simultaneous imaging of biological entities, along with the drawback of photobleaching in fluorescent dyes, have encouraged scientists to apply novel and non-toxic colloidal quantum dots (QDs) in biomedical researches. Herein, a novel aqueous-phase approach for the preparation of multicomponent In-based QDs is reported. Absorption and photoluminescence emission spectra of the as-prepared QDs were tuned by alteration of QDs' composition as Zn-Ag-In-S/ZnS, Ag-In-S/ZnS and Cu-Ag-In-S/ZnS core/shell QDs. In order to reach reproducibly intense and tunable light-emissive colloidal QDs with green, amber, and red color, various optimization steps were carefully performed. The structural characterizations such as EDX, ICP-AES, XRD, TEM and FT-IR measurements were also carried out to demonstrate the success of the present method to prepare extremely quantum-confined QDs capped with functional groups. Then, to ensure their promising biomedical applications, the generated intracellular reactive oxygen species (ROS) by QDs were quantitatively and qualitatively measured in dark conditions and under 405 nm laser irradiation. Our results verified an enhancement in the generation of reactive oxygen species (ROS) and cytotoxic effects in the presence of laser irradiation while their muted toxic effects in dark conditions confirmed biocompatible properties of un-excited In-based QDs. Moreover, bioimaging analysis revealed strong merits of the suggested synthetic route to achieve ideal fluorescent QDs as bright/multi-color optical nano-probes in imaging and transporting pumps in the cell membrane. This further emphasized the potential ability of the present AgInS-based/ZnS QDs in obtaining required results as theranostic agents for simultaneous treatment and imaging of cancer. The harmonized advantages in simplicity and effectiveness of synthesis procedure, excellent structural/optical properties enriched with confirmed biomedical merits in high contrast imaging and potential treatment highlight the present work.

Core Nanoparticle Engineering for Narrower and More Intense Band-Edge Emission from AgInS2/GaSx Core/Shell Quantum Dots

Highly luminescent silver indium sulfide (AgInS2) nanoparticles were synthesized by dropwise injection of a sulfur precursor solution into a cationic metal precursor solution. The two-step reaction including the formation of silver sulfide (Ag2S) nanoparticles as an intermediate and their conversion to AgInS2 nanoparticles, occurred during the dropwise injection. The crystal structure of the AgInS2 nanoparticles differed according to the temperature of the metal precursor solution. Specifically, the tetragonal crystal phase was obtained at 140 °C, and the orthorhombic crystal phase was obtained at 180 °C. Furthermore, when the AgInS2 nanoparticles were coated with a gallium sulfide (GaSx) shell, the nanoparticles with both crystal phases emitted a spectrally narrow luminescence, which originated from the band-edge transition of AgInS2. Tetragonal AgInS2 exhibited narrower band-edge emission (full width at half maximum, FWHM = 32.2 nm) and higher photoluminescence (PL) quantum yield (QY) (49.2%) than those of the orthorhombic AgInS2 nanoparticles (FWHM = 37.8 nm, QY = 33.3%). Additional surface passivation by alkylphosphine resulted in higher PL QY (72.3%) with a narrow spectral shape.

Ligand-mediated synthesis of colloidal Cs2SnI6 three-dimensional nanocrystals and two-dimensional nanoplatelets

Cs₂SnI₆ is a variant on tin-iodide solution-processable materials and may lead to a lead-free material for use in next-generation photovoltaic cells and other optoelectronics. So far, only a few studies have been conducted where shape and geometry control of Cs₂SnI₆ nanocrystals is demonstrated. Here we report a general approach to directly synthesize Cs₂SnI₆ of two-dimensional (2D) layered nanoplatelets as well as three-dimensional (3D) nanocrystals. The shape of Cs₂SnI₆ nanocrystals could be engineered into 3D nanoparticles and different 2D nanoplatelets with well-defined morphology by choosing different organic acid and amine ligands via a hot injection process. Moreover, the thickness of layered 2D nanoplatelets could be adjusted by changing the amount of Cs-oleate present during the synthesis. The photoluminescence emission peaks changed from 643 to 742 nm based on nanomaterial shape. Our method provides a facile and versatile route to rationally control the shape of the Cs₂SnI₆ nanocrystals, which will create opportunities for applications in lead-free optoelectronics.