Chemical Vapor Deposition Method Grown All-Inorganic Perovskite Microcrystals for Self-Powered Photodetectors

PbS/CsPbBr3 Heterojunction for Broadband Neuromorphic Vision Sensing

Neuromorphic light sensors with analogue-domain image processing capability hold promise for overcoming the energy efficiency limitations and latency of von Neumann architecture-based vision chips. Recently, metal halide perovskites, with strong light-matter interaction, long carrier diffusion length, and exceptional photoelectric conversion efficiencies, exhibit reconfigurable photoresponsivity due to their intrinsic ion migration effect, which is expected to advance the development of visual sensors. However, suffering from a large bandgap, it is challenging to achieve highly tunable responsivity simultaneously with a wide-spectrum response in perovskites, which will significantly enhance the image recognition accuracy through the machine learning algorithm. Herein, we demonstrate a broadband neuromorphic visual sensor from visible (Vis) to near-infrared (NIR) by coupling all-inorganic metal halide perovskites (CsPbBr3) with narrow-bandgap lead sulfide (PbS). The PbS/CsPbBr3 heterostructure is composed of high-quality single crystals of PbS and CsPbBr3. Interestingly, the ion migration of CsPbBr3 with the implementation of an electric field induces the energy band dynamic bending at the interface of the PbS/CsPbBr3 heterojunction, leading to reversible, multilevel, and linearly tunable photoresponsivity. Furthermore, the reconfigurable and broadband photoresponse in the PbS/CsPbBr3 heterojunction allows convolutional neuronal network processing for pattern recognition and edge enhancements from the Vis to the NIR waveband, suggesting the great potential of the PbS/CsPbBr3 heterostructure in artificial intelligent vision sensing.

High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr3 microwire/InGaN heterojunction

Low-dimensional CsPbBr3 perovskite materials have gained widespread attention, derived from their remarkable properties and potential for numerous optoelectronic applications. Herein, the sample of CsPbBr3 microwires were prepared horizontally onto n-type InGaN film substrate using an in-plane solution growth method. The resulting CsPbBr3 microwire/InGaN heterojunction allows for the achievement of a highly sensitive and broadband photodetector. Particularly for the implementation in a self-supplying manner, the best-performing photodetector can achieve a superior On/Off ratio of 4.6×105, the largest responsivity ∼ 800.0 mA/W, a maximum detectivity surpassing 4.6× 1012 Jones, and a high external quantum efficiency approaching 86.5% upon 405 nm light illumination. A rapid response time (∼ 4.48 ms/7.68 ms) was also achieved. The as-designed CsPbBr3 microwire/InGaN heterojunction device without any encapsulation exhibits superior comprehensive stability. Besides, the device featuring as a single pixel imaging unit can readily detect simple images under broadband light illumination with a high spatial resolution, acknowledging its outstanding imaging capability. The robust photodetection properties could be derived from the intense absorption of CsPbBr3 MWs and high-efficiency charge carriers transporting toward the in-situ formed CsPbBr3/InGaN heterointerface. The results may offer an available strategy for the in-situ construction of best-performing low-dimensional perovskite heterojunction optoelectronic devices.

Air-Stable Flexible Photodetector Based on MXene-Cs3Bi2I9 Microplate Schottky Junctions for Weak-Light Detection

Weak-light detection technology is widely used in various fields, including industry, high-energy physics, precision analysis, and reflection imaging. Metal-semiconductor-metal (MSM) photodetectors demonstrate high detectivity and high response speed and are one of the suitable structures for the preparation of weak-light detectors. However, traditional MSM photodetectors tend to exhibit high dark currents, which are not conducive to performance improvement. Here, a MXene-Cs₃Bi₂I₉-MXene weak-light detector is proposed. Based on the MXene-Cs₃Bi₂I₉ Schottky junctions, the dark current is reduced by 2 orders of magnitude and the responsivity is significantly improved compared with the traditional Cr/Au-Cs₃Bi₂I₉-Cr/Au MSM photodetector. The device demonstrates excellent photodetection capacity with a photoresponsivity of 6.45 A W^-1, a specific detectivity of 9.45 × 10¹¹ Jones, and a fast response speed of 0.27/2.32 ms. Especially, the device yielded a superior weak-light detectable limit of 10.66 nW cm^-2 and demonstrated excellent optical communication capability. Moreover, such a flexible device shows little degradation in photodetection performance after extreme bending for 4500 cycles, proving remarkable bending endurance and flexibility. The obtained results highlight the great potential of such Cs₃Bi₂I₉/MXene devices as a stable and environmentally friendly candidate for weak-light detection.

Hybrid mixed-dimensional WTe2/CsPbI3perovskite heterojunction for high-performance photodetectors

Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe₂/CsPbI₃heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI₃perovskite confirms the efficient charge transfer at the WTe₂/CsPbI₃heterojunction. After coupled with WTe₂, the photoresponsivity of the CsPbI₃photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe₂/CsPbI₃heterojunction photodetector reveals a large responsivity of 1157 A W^-1and a high detectivity of 2.1 × 10¹³Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions.

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.

Snapshot multi-frame parallel spectral holographic microscopy based on a reconfigurable optical comb

We present a snapshot multi-frame parallel holographic microscopy system through a reconfigurable optical comb source, which consists of a digital micromirror device (DMD) based spectrum filter system and a spectroscopic Michelson interferometric system. The proposed system allows arbitrarily tuning comb spacing and comb number, and the capturing of multi-frame images without overlap in one exposure. As a result, high-quality spectral holograms can be obtained with less acquisition time. The performance of the system is detailed in the experiment and 45-wavelengths holographic imaging for perovskite micro-platelets is conducted, which proves the system has the ability to realize high-performance four-dimensional (4D) imaging.

Flexible Self-Powered Weak Light Detectors Based on ZnO/CsPbBr3/γ-CuI Heterojunctions

Halide perovskites (HPs) with marvelous optical and electrical properties are regarded as one of the competitive candidates for building next-generation photodetectors (PDs). However, combining their excellent properties with satisfactory long-term robustness is still challenging, ultimately limiting the practical applications of HP-based PDs. Herein, a high vacuum deposition system is employed to fabricate flexible self-powered PDs with a ZnO/CsPbBr₃/γ-CuI structure, which shows excellent stability and outstanding performance in weak light detection. Benefiting from the improved crystallinity and optimized device structure, a high detectivity of 8.1 × 10¹³ Jones and a rapid response speed (rise/decay time of 3.9/1.8 μs) are obtained in this self-powered device. Furthermore, the unencapsulated device exhibits intriguing environmental stability and mechanical flexibility. The photocurrent remains unchanged after 7000 s of continuous operation or 100 bending cycles. Furthermore, a 15 × 15 PD array is fabricated as an image sensor. A high contrast image of the target object can be obtained owing to the high sensitivity and uniformity of the self-powered PDs. These results demonstrate the feasibility and practicality of the ZnO/CsPbBr₃/γ-CuI heterojunction for applications in weak light detection and image formation.

Emerging Synthesis Strategies of 2D MOFs for Electrical Devices and Integrated Circuits

The development of advanced electronic devices is boosting many aspects of modern technology and industry. The ever-increasing demand for advanced electrical devices and integrated circuits calls for the design of novel materials, with superior properties for the improvement of working performance. In this review, a detailed overview of the synthesis strategies of 2D metal organic frameworks (MOFs) acquiring growing attention is presented, as a basis for expansion of novel key materials in electrical devices and integrated circuits. A framework of controllable synthesis routes to be implanted in the synthesis strategies of 2D materials and MOFs is described. In short, the synthesis methods of 2D MOFs are summarized and discussed in depth followed by the illustrations of promising applications relating to various electrical devices and integrated circuits. It is concluded by outlining how 2D MOFs can be synthesized in a simpler, highly efficient, low-cost, and more environmentally friendly way which can open up their applicable opportunities as key materials in advanced electrical devices and integrated circuits, enabling their use in broad aspects of the society.

Mechanism of Photoinduced Phase Segregation in Mixed-Halide Perovskite Microplatelets and Its Application in Micropatterning

Photoinduced phase segregation (PPS) is considered as a dominant factor that greatly deteriorates the performances of mixed-halide perovskite devices. However, the mechanism of PPS is still under fierce debate. Herein, CsPb(Br_x/Cl_1-x)₃ microplatelets (MPs) with homogeneous and heterogeneous surfaces are obtained by controlling the growth conditions. Under continuous irradiation, a new photoluminescence (PL) band at 516 nm gradually appears in the heterogeneous MPs, accompanied with the decreased emission of the mixed phase at 480 nm, revealing the occurrence of PPS, while the photoirradiation only leads to slight PL dimming without PPS in the homogeneous MPs. The direct correlation between PPS and the structural heterogeneity indicates that the localized electric field-induced drift (LEFD) of halide ions/carriers is responsible for the PPS. In situ microfluorescence images evidence that the migration of halide ions is directed by the structural heterogeneity-induced localized electric field. Our refined model not only consolidates that PPS can be suppressed by eliminating the defects but also reveals that PPS can be directed by the distribution of defects. Therefore, a fluorescence micropatterning technique is developed based on PPS.

Pulsed Laser Deposition of CsPbBr3 Films: Impact of the Composition of the Target and Mass Distribution in the Plasma Plume

All-inorganic cesium lead bromine (CsPbBr3) perovskites have gained a tremendous potential in optoelectronics due to interesting photophysical properties and much better stability than the hybrid counterparts. Although pulsed laser deposition (PLD) is a promising alternative to solvent-based and/or thermal deposition approaches due to its versatility in depositing multi-elemental materials, deep understanding of the implications of both target composition and PLD mechanisms on the properties of CsPbBr3 films is still missing. In this paper, we deal with thermally assisted preparation of mechano-chemically synthesized CsPbBr3 ablation targets to grow CsPbBr3 films by PLD at the fluence 2 J/cm2. We study both Cs rich- and stoichiometric PbBr2-CsBr mixture-based ablation targets and point out compositional deviations of the associated films resulting from the mass distribution of the PLD-generated plasma plume. Contrary to the conventional meaning that PLD guarantees congruent elemental transfer from the target to the substrate, our study demonstrates cation off-stoichiometry of PLD-grown CsPbBr3 films depending on composition and thermal treatment of the ablation target. The implications of the observed enrichment in the heavier element (Pb) and deficiency in the lighter element (Br) of the PLD-grown films are discussed in terms of optical response and with the perspective of providing operative guidelines and future PLD-deposition strategies of inorganic perovskites.

Photodetectors with High Responsivity by Thickness Tunable Mixed Halide Perovskite Nanosheets

Chemical transformation of typically "nonlayered" phases into two-dimensional structures remains a formidable task. Among the thickness tunable CsPbX₃ (X = Br, Br/I, I) nanosheets (NSs), CsPbBr_1.5I_1.5 NSs with a thickness of ∼4.9 nm have structural stability superior to ∼6.8 nm CsPbI₃ NSs and better hole mobility than ∼3.7 nm CsPbBr₃ NSs. Moving beyond the much-explored CsPbBr₃ photodetectors, we demonstrate a sharp improvement of the photodetection of CsPbBr_1.5I_1.5 NS devices by thickening the NSs to ∼6.1 nm through combining 8-carbon and 18-carbon ligand surfactants. Thereby, the responsivity increases up to one of the highest values of 3313 A W^-1 at 1.5 V (and 3946 A W^-1 at 2 V) with detectivity of 1.6 × 10¹¹ Jones at 1.5 V, due to the increase in carrier mobility up to 7.9 × 10^-4 cm² V^-1 s^-1. The better device performance of the NSs than 8.6-13.9 nm nanocubes (NCs) is due to their planarity which facilitates in-plane mobilization of the charge carriers.

Long-Range Interfacial Charge Carrier Trapping in Halide Perovskite-C60 and Halide Perovskite-TiO2 Donor-Acceptor Films

Interfacial electron transfer across perovskite-electron acceptor heterojunctions plays a significant role in the power-conversion efficiency of perovskite solar cells. Thus, electron donor-acceptor thin films of halide perovskite nanocrystals receive considerable attention. Nevertheless, understanding and optimizing distance- and thickness-dependent electron transfer in perovskite-electron acceptor heterojunctions are important. We reveal the distance-dependent and diffusion-controlled interfacial electron transfer across donor-acceptor heterojunction films formed by formamidinium or cesium lead bromide (FAPbBr₃/CsPbBr₃) perovskite nanocrystals with TiO₂/C₆₀. Self-assembled nanocrystal films prepared from FAPbBr₃ show a longer photoluminescence lifetime than a solution, showing a long-range carrier migration. The acceptors quench the photoluminescence intensity but not the lifetime in a solution, revealing a static electron transfer. Conversely, the electron transfer in the films changes from dynamic to static by moving toward the donor-acceptor interface. While radiative recombination dominates the electron transfer at 800 μm or farther, the acceptors scavenge the photogenerated carriers within 100 μm. This research highlights the significance of interfacial electron transfer in perovskite films.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Lead-free perovskite compounds CsSn1-xGexI3-yBry explored for superior visible-light absorption

Hybrid perovskites are favoured over other numerous optoelectronic materials, thanks to their rapidly enhanced power conversion efficiency (PCE) and facile processing. At present, future developments are seriously hampered by the high toxicity of heavy metals and poor stability. Inorganic lead-free perovskites, CsSn1-xGexI3-yBry, are herein explored for superior optical performance by first-principles calculations based on density functional theory (DFT). It is unveiled that the valence band maximum (VBM) is mainly occupied by the p-orbit of halide ions, while the conduction band minimum (CBM) is composed of the p-orbit of the metal ion. Moreover, Bader charge analysis shows that CsSn0.5Ge0.5I3 corresponds to the most obvious charge transfer compared to the others. The defect formation energy indicates that perovskite compounds CsSn1-xGexI3-yBry, are more easily synthesized than the series CsSn1-xGexI3, and the physically accessible area is also determined in the coordinate system defined by the chemical potential change of the host atoms, ΔμSn and ΔμI. Additionally, the absorption spectra show that among the doped compounds of the form CsSn0.5Ge0.5I3-yBry, perovskite CsSn0.5Ge0.5I2Br is superior in terms of optical response in the visible-light range. The results shed a new light on the study of highly efficient and stable lead-free perovskite-based solar cells (PSCs).

Toward High-Performance Electron/Hole-Transporting-Layer-Free, Self-Powered CsPbIBr2 Photodetectors via Interfacial Engineering

Self-powered photodetectors (PDs) with inorganic lead halide perovskites hold multiple traits of high sensitivity, fast response, independence from external power supply, and excellent sustainability and stability, thus holding a great promise for practical applications. However, they generally contain high-temperature-processed electron-transporting layers (ETLs) and high-cost, unstable hole-transporting layers (HTLs) coupled with noble metal electrodes, which bring significant obstacles of production cost and stability for their potential commercialization. Herein, we demonstrate the building of high-performance HTL/ETL-free, self-powered CsPbIBr₂ PD with simplified architecture of fluorine-doped tin oxide (FTO)/CsPbIBr₂/carbon upon interfacial modification by polyethyleneimine (PEI). The optimized PD yields a dark current of 2.03 × 10^-9 A, peak responsivity (R) of 0.32 A/W, maximum specific detectivity (D*) of 3.74 × 10¹² Jones, and response time of 1.21 μs. These figures of merit are far beyond those of the one prepared without PEI modification and even the PD containing TiO₂ ETL. Hence, our work suggests a highly feasible route to develop self-powered PDs with significantly simplified fabrication and a reduced production cost.

All-Inorganic Halide Perovskite Alloy Nanowire Network Photodetectors with High Performance

Organic-inorganic hybrid lead halide perovskites have attracted much attention in the photoelectric field due to their excellent characteristics, such as a tunable band gap, simple fabrication process, and high photoelectric conversion efficiency. However, the commercialization of the perovskite-based devices still faces many challenges, one of which is the inclusion of the toxic lead. Herein, we demonstrated a two-step solution method for synthesizing tin-based perovskite nanowires (NWs) with their application in photodetectors (PDs). By changing the halide exchange time and the Sn content in the precursor, the dark current of the CsPb_xSn_1-x(Br_yI_1-y)₃ perovskite NW PDs increased with increasing content of tin and decreased with increasing Br concentration, and the lowest dark current with a value of 0.672 nA at 1 V was achieved for the perovskite alloy NW PDs synthesized with 0.5 mg mL^-1 SnI₂. Our optimized perovskite alloy NW PDs showed high performance with a linear dynamic range of up to 120 dB, a rising/falling time of 4.25/4.82 ms, and a detectivity of 2 × 10¹⁰ Jones. In addition, our Sn-based perovskite NW devices could maintain good performance after storing in air for 30 days. These results demonstrated good practical application for the Sn-based perovskite NW devices.

Study of Metal-Semiconductor-Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C₆₀ and an Ag electrode on CH₃NH₃PbBr₃ perovskite crystals to complete a photodetector structure, which exhibits a metal–semiconductor–metal (MSM) type structure. First, CH₃NH₃PbBr₃ perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH₃NH₃PbBr₃ perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH₃NH₃PbBr₃ perovskite crystals were observed to form a contact with the Ag/C₆₀ as the photodetector, which revealed a responsivity of 24.5 A/W.

Vacuum-Deposited Blue Inorganic Perovskite Light-Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) have drawn great research attention because of their outstanding electroluminescence performance by solution processing. PeLEDs made by thermal evaporation are relatively rarely explored but are compatible to existing organic light-emitting diode industrial lines. Blue-emitting PeLEDs are all based on organic-containing perovskites, rather than more stable all-inorganic perovskites because of their poor solubility, too fast crystallization, uneven discrete films, and unattainable pure blue emission. Here, we report all-inorganic, vacuum-processed blue PeLEDs. High-throughput combinatorial approaches are employed to optimize Cs-Pb-Br-Cl composition in our dual-source co-evaporation system to achieve the balance between film photoluminescence and injection efficiency. The as-deposited perovskite films demonstrated excellent intrinsic stability against heat, UV-light, and humidity attack. A series of PeLEDs were obtained covering the standard blue spectral region with a best luminance of 121 cd/m² and an external quantum efficiency of 0.38%. We believe that the vacuum processing strategy demonstrated here provides a very promising alternative way to produce efficient and stable all-inorganic blue-emitting PeLEDs.

All-inorganic perovskite CsPbBr3 microstructures growth via chemical vapor deposition for high-performance photodetectors

Perovskite cesium lead halide (CsPbBr₃) has attracted considerable attention due to its excellent optoelectronic properties and superior stability against moisture, oxygen, light, and heat. In this work, the micro-environment controlled chemical vapor deposition (CVD) method has been adopted to synthesize high-quality single-crystalline CsPbBr₃ microstructures, including microwires, microplates and triangular pyramids. Moreover, the structure-activity relationship between the material microstructures and the device properties is illustrated. The results show that photodetectors based on a single horizontal CsPbBr₃ microwire exhibit a high responsivity (312.2 A W^-1) and a fast response time of 5.8 ms. Photodetectors based on a single CsPbBr₃ microplate exhibit a responsivity of 1.74 A W^-1 and a response of 10 ms. These results indicate that the CsPbBr₃ microwire photodetector is characterized by a higher photodetector performance when compared to the microplate due to its excellent crystallization quality and the Fabry-Pérot cavity effect in the microwire. Furthermore, the flexible CsPbBr₃ microwire photodetector was demonstrated on a mica substrate. The results show that the photocurrent can be maintained at 90% after 3000 cycles at a bending radius of 2.5 mm. This work demonstrates the structure-activity photodetector performance, which is essential to develop a full understanding about high-performance optoelectronic devices based on all-inorganic lead halide perovskite materials.

A Review of Perovskite Photovoltaic Materials' Synthesis and Applications via Chemical Vapor Deposition Method

Perovskite photovoltaic materials (PPMs) have emerged as one of superstar object for applications in photovoltaics due to their excellent properties-such as band-gap tunability, high carrier mobility, high optical gain, astrong nonlinear response-as well as simplicity of their integration with other types of optical and electronic structures. Meanwhile, PPMS and their constructed devices still present many challenges, such as stability, repeatability, and large area fabrication methods and so on. The key issue is: how can PPMs be prepared using an effective way which most of the readers care about. Chemical vapor deposition (CVD) technology with high efficiency, controllability, and repeatability has been regarded as a cost-effective road for fabricating high quality perovskites. This paper provides an overview of the recent progress in the synthesis and application of various PPMs via the CVD method. We mainly summarize the influence of different CVD technologies and important experimental parameters (temperature, pressure, growth environment, etc.) on the stabilization, structural design, and performance optimization of PPMS and devices. Furthermore, current challenges in the synthesis and application of PPMS using the CVD method are highlighted with suggested areas for future research.