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Cui Q, Li Y, Zhang H, Chang J, Xu H, Xu C. Spatiotemporal evolution of ultrafast photocarrier dynamics across WS2-ReS2 lateral interface. J Chem Phys 2024; 160:124704. [PMID: 38526112 DOI: 10.1063/5.0198494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 03/04/2024] [Indexed: 03/26/2024] Open
Abstract
2D lateral heterostructures possess atomically sharp lateral interfaces, while understanding of their ultrafast photocarrier dynamics from a spatiotemporal viewpoint is rather elusive. In this study, we have investigated the spatiotemporal evolution of photocarrier dynamics across the 1D lateral interface of a WS2-ReS2 2D lateral heterostructure utilizing femtosecond laser pump-probe. The nontrivial band offset across the 1D lateral interface markedly mediates the spatiotemporal photocarrier transfer and transport processes. Subsequently, a hole accumulation region on the WS2 side and an electron accumulation region (1DEG) on the ReS2 side have been spatially identified by correlating ultrafast photocarrier signals. The measured width of the unilateral depletion region is 1360 ± 160 nm. Our work has provided substantial insights into mediated photocarrier dynamics in the 2D lateral heterostructure, which will benefit explorations in 2D interfacial physics and 2D lateral optoelectronic devices.
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Affiliation(s)
- Qiannan Cui
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Yuanyuan Li
- School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
| | - He Zhang
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Jianhua Chang
- School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Chunxiang Xu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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2
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Xu C, Barden N, Alexeev EM, Wang X, Long R, Cadore AR, Paradisanos I, Ott AK, Soavi G, Tongay S, Cerullo G, Ferrari AC, Prezhdo OV, Loh ZH. Ultrafast Charge Transfer and Recombination Dynamics in Monolayer-Multilayer WSe 2 Junctions Revealed by Time-Resolved Photoemission Electron Microscopy. ACS NANO 2024; 18:1931-1947. [PMID: 38197410 DOI: 10.1021/acsnano.3c06473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The ultrafast carrier dynamics of junctions between two chemically identical, but electronically distinct, transition metal dichalcogenides (TMDs) remains largely unknown. Here, we employ time-resolved photoemission electron microscopy (TR-PEEM) to probe the ultrafast carrier dynamics of a monolayer-to-multilayer (1L-ML) WSe2 junction. The TR-PEEM signals recorded for the individual components of the junction reveal the sub-ps carrier cooling dynamics of 1L- and 7L-WSe2, as well as few-ps exciton-exciton annihilation occurring on 1L-WSe2. We observe ultrafast interfacial hole (h) transfer from 1L- to 7L-WSe2 on an ∼0.2 ps time scale. The resultant excess h density in 7L-WSe2 decays by carrier recombination across the junction interface on an ∼100 ps time scale. Reminiscent of the behavior at a depletion region, the TR-PEEM image reveals the h density accumulation on the 7L-WSe2 interface, with a decay length ∼0.60 ± 0.17 μm. These charge transfer and recombination dynamics are in agreement with ab initio quantum dynamics. The computed orbital densities reveal that charge transfer occurs from the basal plane, which extends over both 1L and ML regions, to the upper plane localized on the ML region. This mode of charge transfer is distinctive to chemically homogeneous junctions of layered materials and constitutes an additional carrier deactivation pathway that should be considered in studies of 1L-TMDs found alongside their ML, a common occurrence in exfoliated samples.
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Affiliation(s)
- Ce Xu
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Natalie Barden
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | | | - Anna K Ott
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
- Institute of Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giulio Cerullo
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
- IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Zhi-Heng Loh
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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3
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Tugchin BN, Doolaard N, Barreda AI, Zhang Z, Romashkina A, Fasold S, Staude I, Eilenberger F, Pertsch T. Photoluminescence Enhancement of Monolayer WS 2 by n-Doping with an Optically Excited Gold Disk. NANO LETTERS 2023; 23:10848-10855. [PMID: 37967849 PMCID: PMC10723068 DOI: 10.1021/acs.nanolett.3c03053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Revised: 10/08/2023] [Indexed: 11/17/2023]
Abstract
In nanophotonics and quantum optics, we aim to control and manipulate light with tailored nanoscale structures. Hybrid systems of nanostructures and atomically thin materials are of interest here, as they offer rich physics and versatility due to the interaction between photons, plasmons, phonons, and excitons. In this study, we explore the optical and electronic properties of a hybrid system, a naturally n-doped monolayer WS2 covering a gold disk. We demonstrate that the nonresonant excitation of the gold disk in the high absorption regime efficiently generates hot carriers via localized surface plasmon excitation, which n-dope the monolayer WS2 and enhance the photoluminescence emission by regulating the multiexciton population and stabilizing the neutral exciton emission. The results are relevant to the further development of nanotransistors in photonic circuits and optoelectronic applications.
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Affiliation(s)
- Bayarjargal N. Tugchin
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Nathan Doolaard
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Angela I. Barreda
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Institute
of Solid State Physics, Friedrich Schiller
University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
- Group
of Displays and Photonics Applications, Carlos III University of Madrid, Avda. de la Universidad, 30, Leganés, 28911 Madrid, Spain
| | - Zifei Zhang
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Anastasia Romashkina
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Stefan Fasold
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Vistec
Electron Beam GmbH, 07743 Jena, Germany
| | - Isabelle Staude
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Institute
of Solid State Physics, Friedrich Schiller
University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Falk Eilenberger
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Fraunhofer-Institute
for Applied Optics and Precision Engineering IOF, Albert-Einstein-Straße 7, 07745 Jena, Germany
| | - Thomas Pertsch
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Fraunhofer-Institute
for Applied Optics and Precision Engineering IOF, Albert-Einstein-Straße 7, 07745 Jena, Germany
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Zhang C, Zhang Y, Fang Z, Chen Y, Chen Z, He H, Zhu H. Near-Unity-Efficiency Energy Transfer from Perovskite to Monolayer Semiconductor through Long-Range Migration and Asymmetric Interfacial Transfer. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41895-41903. [PMID: 34432427 DOI: 10.1021/acsami.1c11753] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
van der Waals heterostructures combining perovskites of strong light absorption with atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for light-harvesting and optoelectronic applications. However, current research studies integrating TMDs with low-dimensional perovskite nanomaterials generally suffer from poor carrier/energy transport and harnessing, stemming from poor interfacial interaction due to the nanostructured nature and ligands on surface/interface. To overcome the limitations, here, we report prototypical three-dimensional (3D)/2D perovskite/TMD heterostructures by combing highly smooth and ligand-free CsPbBr3 film with a WSe2 monolayer. We show that the energy transfer at interface occurs through asymmetric two-step charge-transfer process, with ultrafast hole transfer in ∼200 fs and subsequent electron transfer in ∼10 ps, driven by the asymmetric type I band alignment. The energy migration and transfer from CsPbBr3 film to WSe2 can be well described by a one-dimensional diffusion model with a carrier diffusion length of ∼500 nm in CsPbBr3 film. Thanks to the long-range carrier migration and ultrafast interfacial transfer, highly efficient (>90%) energy transfer to WSe2 can be achieved with CsPbBr3 film as thick as ∼180 nm, which can capture most of the light above its band gap. The efficient light and energy harvesting in perovskite/TMD 3D/2D heterostructures suggest great promise in optoelectronic and photonic devices.
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Affiliation(s)
- Chi Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Yao Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Zhishan Fang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Yuzhong Chen
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Zeng Chen
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Haiping He
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Haiming Zhu
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
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5
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Wang F, Pei K, Li Y, Li H, Zhai T. 2D Homojunctions for Electronics and Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005303. [PMID: 33644885 DOI: 10.1002/adma.202005303] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Revised: 09/19/2020] [Indexed: 05/21/2023]
Abstract
In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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6
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Lee H, Nguyen VT, Park JY, Lee J. Microsphere-coupled light emission control of van der Waals heterostructures. NANOSCALE 2021; 13:4262-4268. [PMID: 33595024 DOI: 10.1039/d0nr06510b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) integrated into photonic structures provide an intriguing playground for the development of novel optoelectronic devices with improved performance. Here, we show the enhanced light emission from TMDC based van der Waals heterostructures through coupling with microsphere cavities. We observe cavity-induced emission enhancement of TMDC materials which varies by an order of magnitude, depending on the size of the microsphere and thickness of the supporting oxide substrate. Furthermore, we demonstrate microsphere cavity-enhanced electroluminescence of a van der Waals light emitting transistor, showing the potential of 2D material based hybrid optoelectronic structures.
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Affiliation(s)
- Hyunseung Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Van Tu Nguyen
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea and Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, 100000, Vietnam
| | - Ji-Yong Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Jieun Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea and Institute of Applied Physics and Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.
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Fang L, Yuan X, Liu K, Li L, Zhou P, Ma W, Huang H, He J, Tao S. Direct bilayer growth: a new growth principle for a novel WSe 2 homo-junction and bilayer WSe 2 growth. NANOSCALE 2020; 12:3715-3722. [PMID: 31993600 DOI: 10.1039/c9nr09874g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Homo-junction and multi-layer structures of transition metal chalcogenide (TMD) materials provide great flexibility for band-structure engineering and designing photoelectric devices. However, the knowledge of van der Waals epitaxy growth limits the development of these heterostructures. Herein, we employed the chemical vapor deposition (CVD) growth strategy to synthesize novel WSe2 homo-junction samples with a triangular monolayer in the center and three AA stacking bilayer flakes connected to the vertexes of the monolayer. The emitted photon energy from the bilayer near the junction showed a blueshift in energy of up to 24 meV compared with bare bilayer WSe2, confirming the charge transfer effect from monolayer to bilayer WSe2. Further growth studies revealed the shape evolution from WSe2 homo-junction to bilayer. The whole homo-junction formation and evolution process cannot be explained by the traditional layer-by-layer growth mechanism. Instead, a direct bilayer growth approach is proposed to explain the bilayer formation and evolution at the vertexes of the bottom layer of WSe2. These findings suggest that the growth of bilayer TMDs is more complex than our previous understanding. This work presents deepens insight into van der Waals epitaxy growth, and thus is valuable for guiding the fabrication of novel homo-junctions for both fundamental science and optoelectronic applications.
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Affiliation(s)
- Long Fang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Kunwu Liu
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Lin Li
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Peng Zhou
- Hunan Provincial Key Defense Laboratory of High Temperature Wear-Resisting Materials and Preparation Technology, Hunan University of Science and Technology, Xiangtan, Hunan 411201, China
| | - Wei Ma
- Engineering Research Center of Advanced Functional Material Manufacturing of Ministry of Education, School of Chemical Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Han Huang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Jun He
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Shaohua Tao
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
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