In Situ Photoluminescence of Colloidal Quantum Dots During Gas Exposure-The Role of Water and Reactive Atomic Layer Deposition Precursors

Atomic Layer Deposition for Stable InP-Based On-Chip Quantum Dot microLEDs: Hybrid Quantum Dot Pockets

Recent advances in synthesis techniques yield InP-based QDs with optical properties comparable to those of benchmark Cd-based QDs, making InP-based QDs viable alternatives to toxic Cd-based QDs for applications such as quantum dot LEDs (QLEDs). However, QLEDs typically suffer from a loss of luminescence over time due to exposure of the QDs to ambient air. To avoid this, state-of-the-art hybrid barrier layers are explored consisting of alternating organic/inorganic layers. In this study, InP-based QD thin films and InP-based QDs embedded in Kraton polymers are encapsulated with a thin metal oxide barrier layer by atomic layer deposition (ALD). Specifically, Al2O3, TiO2, and ZnO thin films are deposited using trimethylaluminum (TMA), tetrakis(dimethylamino)titanium (TDMAT), and diethylzinc (DEZ), with H2O as the reactant. In situ photoluminescence (PL) is used to evaluate the optical response of the InP-based QDs during the ALD coating. The results show that ALD on pristine QD thin films causes degradation of luminescence, while this is not observed for polymer-embedded QDs. The long-term stability of the (ALD-coated) samples is investigated by accelerated degradation in a humidity chamber at a high temperature. Using a single Al2O3 ALD thin film as a capping layer for polymer-embedded QDs, greater stability of the QD-PL over a period of at least 300 h is found compared to pristine QD samples. A similar study is performed with InP-based QDs embedded in UV-patterned polymer (thiol-ene) structures, the so-called QD pockets, envisioned for use in on-chip quantum dot microLEDs. These QD pockets are purposefully designed for pick-and-place operations to reduce the complexity of the on-chip quantum dot microLED manufacturing process. The PL stability was significantly improved after incorporating Al2O3 ALD thin films, with these hybrid QD pockets showing no clear signs of degradation after 140 h. The combination of polymer embedding and ALD with the merits and scalability of the QD pocket structure is demonstrated to be an effective approach to improving the long-term QD stability and shows promise for the development of stable, InP-based on-chip quantum dot microLEDs.

Bridging the gap between surface physics and photonics

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

Synergetic effect of the surface ligand and SiO2 driven photoluminescence stabilization of the CH3NH3PbBr3 perovskite magic-sized clusters

Zero-dimensional Perovskite Magic-size Clusters play crucial roles in understanding and controlling nucleation and growth of semiconductor nanoparticles. However, their metastability behavior is a critical hindrance for reliable characterizations. Here, we report the first demonstration of using an excess amount of surface ligand and SiO₂ as novel passivation for synthesizing the magic-sized clusters (MSCs) by the Ligand-assisted reprecipitation method. A synergetic effect between an excessed surface ligand and SiO₂ inhibits the protonation and deprotonation reaction between amine-based and acid-based ligand, leading to enhanced PL stability. The obtained CH₃NH₃PbBr₃ PMSCs/SiO₂ retain 70% of its initial emission intensity in ambient conditions for 20 days. This passivation approach opens an entirely new avenue for the reliable characterizations of CH₃NH₃PbBr₃ PMSCs, which will significantly broaden their application for understanding and controlling nucleation and growth of semiconductor nanoparticles.

Atomic Layer Deposition on Polymer Thin Films: On the Role of Precursor Infiltration and Reactivity

Inorganic barriers grown by atomic layer deposition (ALD) can overcome the stability issues originating from the permeation of foreign species (water and oxygen) into polymer thin films. Alternatively, infiltration of ALD species into the bulk of the polymer can be used to modify its characteristic properties. In this study, the feasibility of growing an inorganic barrier with ALD on polystyrene, poly(methyl methacrylate), and poly(ethylene terephthalate glycol) thin films is evaluated. The nucleation and growth of the ALD layer, including the infiltration into the polymer thin film, are monitored in situ using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy for Al₂O₃-ALD with trimethylaluminum as the Al precursor and H₂O as the reactant. The results show that the deposition temperature and the presence and location of functional groups in the polymer chain exert the strongest influence on the infiltration behavior and as such allow us to manipulate (i.e. to prevent or expedite) the infiltration into the polymer thin film.

Nanoscale Encapsulation of Perovskite Nanocrystal Luminescent Films via Plasma-Enhanced SiO2 Atomic Layer Deposition

Photoluminescence perovskite nanocrystals (NCs) have shown significant potential in optoelectronic applications in view of their narrow band emission with high photoluminescence quantum yields and color tunability. The main obstacle for practical applications is to obtain high durability against an external environment. In this work, a low temperature (50 °C) plasma-enhanced atomic layer deposition (PE-ALD) protection strategy was developed to stabilize CsPbBr₃ NCs. Silica was employed as the encapsulation layer because of its excellent light transmission performance and water corrosion resistance. The growth mechanism of inorganic SiO₂ via PE-ALD was investigated in detail. The Si precursor bis(diethylamino)silane (BDEAS) reacted with the hydroxyl groups (-OH) and thereby initiated the subsequent silica growth while having minimal influence to the organic ligands and did not cause PL quenching. Subsequently, O₂ plasma with high reactivity was used to oxidize the amine ligands of the BDEAS precursor while did not etch the NCs. The obtained CsPbBr₃ NCs/SiO₂ film exhibited exceptional stability in water, light, and heat as compared to the pristine NC film. Based on this method, a white light-emitting diode with improved operational stability was successfully fabricated, which exhibited a wide color gamut (∼126% of the National Television Standard Committee). Our work successfully demonstrates an efficient protection scheme via the PE-ALD method, which extends the applied range of other materials for stabilization of perovskite NCs through this approach.