Influence of Backbone Regioregularity on High-Mobility Conjugated Polymers Based on Alkylated Dithienylacrylonitrile

Unfolding the Correlation between Solution Aggregation and Solid-State Crystal Orientation in Donor-Acceptor Copolymers via Solvent Additive Processing

Tailoring the crystal orientation of donor-acceptor (D-A) copolymers is vital for boosting the performance of optoelectronic devices. Despite recent advances in controlling the crystal orientation of D-A copolymers in films, the investigation into their aggregates in solution and the correlation between the solution aggregates and solid-state crystal orientation has been limited. Herein, an effective solvent additive strategy is reported for tuning solution aggregates and the consequent solid-state structures of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)). Specifically, the addition of 1-decanethiol (10-thiol) to the P(NDI2OD-T2) chloroform solution promoted the aggregation of P(NDI2OD-T2) chains because of the improved planarization of the backbones, which changed their crystal orientation in the film from coexisting edge-on and face-on to dominant edge-on when produced by drop-casting. The mechanism of this crystal orientation transformation is elucidated based on the interaction between 10-thiol and the side chains of P(NDI2OD-T2). The optical properties of P(NDI2OD-T2) films with different crystalline structures are closely correlated. Notably, the 10-thiol-enabled facile tailoring of the crystal orientation in P(NDI2OD-T2) can be readily applied to other D-A copolymers of interest. The findings of this study highlight a robust solvent additive strategy for regulating solution aggregates and crystal orientation in D-A copolymer films, which have applications in many optoelectronic devices.

Preparation of Dye Semiconductors via Coupling Polymerization Catalyzed by Two Catalysts and Application to Transistor

Organic dye semiconductors have received increasing attention as the next generation of semiconductors, and one of their potential applications is as a core component of organic transistors. In this study, two novel diketopyrrolopyrrole (DPP) dye core-based materials were designed and separately prepared using Stille coupling reactions under different palladium catalyst conditions. The molecular weights and elemental compositions were tested to demonstrate that both catalysts could be used to successfully prepare materials of this structure, with the main differences being the weight-average molecular weight and the dispersion index. PDPP-2Py-2Tz I with a longer conjugation length exhibited better thermodynamic stability than the counterpart polymer PDPP-2Py-2Tz II. The intrinsic optical properties of the polymers were relatively similar, while the electrochemical tests showed small differences in their energy levels. The polymers obtained with different catalysts displayed similar and moderate electron mobility in transistor devices, while PDPP-2Py-2Tz I possessed a higher switching ratio. Our study provides a comparison of such dye materials under different catalytic conditions and also demonstrates the great potential of dye materials for optoelectronic applications.

Molecular Design Concept for Enhancement Charge Carrier Mobility in OFETs: A Review

In the last two decades, organic field-effect transistors (OFETs) have garnered increasing attention from the scientific and industrial communities. The performance of OFETs can be evaluated based on three factors: the charge transport mobility (μ), threshold voltage (Vth), and current on/off ratio (Ion/off). To enhance μ, numerous studies have concentrated on optimizing charge transport within the semiconductor layer. These efforts include: (i) extending π-conjugation, enhancing molecular planarity, and optimizing donor-acceptor structures to improve charge transport within individual molecules; and (ii) promoting strong aggregation, achieving well-ordered structures, and reducing molecular distances to enhance charge transport between molecules. In order to obtain a high charge transport mobility, the charge injection from the electrodes into the semiconductor layer is also important. Since a suitable frontier molecular orbitals' level could align with the work function of the electrodes, in turn forming an Ohmic contact at the interface. OFETs are classified into p-type (hole transport), n-type (electron transport), and ambipolar-type (both hole and electron transport) based on their charge transport characteristics. As of now, the majority of reported conjugated materials are of the p-type semiconductor category, with research on n-type or ambipolar conjugated materials lagging significantly behind. This review introduces the molecular design concept for enhancing charge carrier mobility, addressing both within the semiconductor layer and charge injection aspects. Additionally, the process of designing or converting the semiconductor type is summarized. Lastly, this review discusses potential trends in evolution and challenges and provides an outlook; the ultimate objective is to outline a theoretical framework for designing high-performance organic semiconductors that can advance the development of OFET applications.

Improving Bias-Stress Stability of p-Type Organic Field-Effect Transistors by Constructing an Electron Injection Barrier at the Drain Electrode/Semiconductor Interfaces

Bias-stress instability has been a challenging problem and a roadblock for developing stable p-type organic field-effect transistors (OFETs). This device instability is hypothesized because of electron-correlated charge carrier trapping, neutralization, and recombination at semiconductor/dielectric interfaces and in semiconductor channels. Here, in this paper, a strategy is demonstrated to improve the bias-stress stability by constructing a multilayered drain electrode with energy-level modification layers (ELMLs). Several organic small molecules with high lowest unoccupied molecular orbital (LUMO) energy levels are experimented as ELMLs. The energy-level offset between the Fermi level of the drain electrode and the LUMOs of the ELMLs is shown to construct the interfacial barrier, which suppresses electron injection from the drain electrode into the channel, leading to significantly improved bias-stress stability of OFETs. The mechanism of the ELMLs on the bias-stress stability is studied by quantitative modeling analysis of charge carrier dynamics. Of all injection models evaluated, it is found that Fowler-Nordheim tunneling describes best the observed experimental data. Both theory and experimental data show that, by using the ELMLs with higher LUMO levels, the electron injection can be suppressed effectively, and the bias-stress stability of p-type OFETs can thereby be improved significantly.