Fast, Infrared-Active Optical Transistors Based on Dye-Sensitized CdSe Nanocrystals

Substrate Effects on the Bandwidth of CdSe Quantum Dot Photodetectors

We investigate the time-resolved photocurrent response of CdSe quantum dot (QD) thin films sensitized with zinc β-tetraaminophthalocyanine (Zn4APc) (Kumar , ACS Appl. Mater. Interfaces, 2019, 11, 48271-48280) on three different substrates, namely, silicon with 230 nm SiO₂ dielectric, glass, and polyimide. While Si/SiO₂ (230 nm) is not suitable for any transient photocurrent characterization due to an interfering photocurrent response of the buried silicon, we find that polyimide substrates invoke the larger optical bandwidth with 85 kHz vs 67 kHz for the same quantum dot thin film on glass. Upon evaluation of the transient photocurrent, we find that the photoresponse of the CdSe quantum dot films can be described as a combination of carrier recombination and fast trapping within 2.7 ns followed by slower multiple trapping events. The latter are less pronounced on polyimide, which leads to the higher bandwidth. We show that all devices are resistance-capacitance (RC)-time limited and that improvements of photoresistance are the key to further increasing the bandwidth.

Periodic Fluorescence Variations of CdSe Quantum Dots Coupled to Aryleneethynylenes with Aggregation-Induced Emission

CdSe nanocrystals and aggregates of an aryleneethynylene derivative are assembled into a hybrid thin film with dual fluorescence from both fluorophores. Under continuous excitation, the nanocrystals and the molecules exhibit anticorrelated fluorescence intensity variations, which become periodic at low temperature. We attribute this to a structure-dependent aggregation-induced emission of the aryleneethynylene derivative, which impacts the rate of excitation energy transfer between the molecules and nanocrystals. This work highlights that combining semiconductor nanocrystals with molecular aggregates, which exhibit aggregation-induced emission, can result in emerging optical properties.

Prospects of Coupled Organic-Inorganic Nanostructures for Charge and Energy Transfer Applications

We review the field of organic-inorganic nanocomposites with a focus on materials that exhibit a significant degree of electronic coupling across the hybrid interface. These nanocomposites undergo a variety of charge and energy transfer processes, enabling optoelectronic applications in devices which exploit singlet fission, triplet energy harvesting, photon upconversion or hot charge carrier transfer. We discuss the physical chemistry of the most common organic and inorganic components. Based on those we derive synthesis and assembly strategies and design criteria on material and device level with a focus on photovoltaics, spin memories or optical upconverters. We conclude that future research in the field should be directed towards an improved understanding of the binding motif and molecular orientation at the hybrid interface.