Stabilization of Colloidal Germanium Nanoparticles: From the Study to the Prospects of the Application in Thin-Film Technology

We present the stabilization of halide-terminated Ge nanoparticles prepared via a disproportionation reaction of metastable Ge(I)X solutions with well-defined size distribution. Further tailoring of the stability of the Ge nanoparticles was achieved using variations in the substituent. Ge nanoparticles obtained in this way are readily dispersed in organic solvents, long-term colloidally stable, and are perfect prerequisites for thin-film preparation. This gives these nanomaterials a future in surface-dependent optical applications, as shown for the halide-terminated nanoparticles.

Edge contacts accelerate the response of MoS2 photodetectors

We use a facile plasma etching process to define contacts with an embedded edge geometry for multilayer MoS₂ photodetectors. Compared to the conventional top contact geometry, the detector response time is accelerated by more than an order of magnitude by this action. We attribute this improvement to the higher in-plane mobility and direct contacting of the individual MoS₂ layers in the edge geometry. With this method, we demonstrate electrical 3 dB bandwidths of up to 18 MHz which is one of the highest values reported for pure MoS₂ photodetectors. We anticipate that this approach should also be applicable to other layered materials, guiding a way to faster next-generation photodetectors.

Substrate effects on the speed limiting factor of WSe2 photodetectors

We investigate the time-resolved photoelectric response of WSe₂ crystals on glass and flexible polyimide substrates to determine the effect of a changed dielectric environment on the speed of the photodetectors. We show that varying the substrate material can alter the speed-limiting mechanism: while the detectors on polyimide are RC limited, those on glass are limited by slower excitonic diffusion processes. We attribute this to a shortening of the depletion layer at the metal electrode/WSe₂ interface caused by the higher dielectric screening of glass compared to polyimide. The photodetectors on glass show a tunable bandwidth, which can be increased to 2.6 MHz with increasing the electric field.

Sub-nanosecond Intrinsic Response Time of PbS Nanocrystal IR-Photodetectors

Colloidal nanocrystals (NCs), especially lead sulfide NCs, are promising candidates for solution-processed next-generation photodetectors with high-speed operation frequencies. However, the intrinsic response time of PbS-NC photodetectors, which is the material-specific physical limit, is still elusive, as the reported response times are typically limited by the device geometry. Here, we use the two-pulse coincidence photoresponse technique to identify the intrinsic response time of 1,2-ethanedithiol-functionalized PbS-NC photodetectors after femtosecond-pulsed 1560 nm excitation. We obtain an intrinsic response time of ∼1 ns, indicating an intrinsic bandwidth of ∼0.55 GHz as the material-specific limit. Examination of the dependence on laser power, gating, bias, temperature, channel length, and environmental conditions suggest that Auger recombination, assisted by NC-surface defects, is the dominant mechanism. Accordingly, the intrinsic response time might further be tuned by specifically controlling the ligand coverage and trap states. Thus, PbS-NC photodetectors are feasible for gigahertz optical communication in the third telecommunication window.

Substrate Effects on the Bandwidth of CdSe Quantum Dot Photodetectors

We investigate the time-resolved photocurrent response of CdSe quantum dot (QD) thin films sensitized with zinc β-tetraaminophthalocyanine (Zn4APc) (Kumar , ACS Appl. Mater. Interfaces, 2019, 11, 48271-48280) on three different substrates, namely, silicon with 230 nm SiO₂ dielectric, glass, and polyimide. While Si/SiO₂ (230 nm) is not suitable for any transient photocurrent characterization due to an interfering photocurrent response of the buried silicon, we find that polyimide substrates invoke the larger optical bandwidth with 85 kHz vs 67 kHz for the same quantum dot thin film on glass. Upon evaluation of the transient photocurrent, we find that the photoresponse of the CdSe quantum dot films can be described as a combination of carrier recombination and fast trapping within 2.7 ns followed by slower multiple trapping events. The latter are less pronounced on polyimide, which leads to the higher bandwidth. We show that all devices are resistance-capacitance (RC)-time limited and that improvements of photoresistance are the key to further increasing the bandwidth.

Fast, Infrared-Active Optical Transistors Based on Dye-Sensitized CdSe Nanocrystals

We report an optically gated transistor composed of CdSe nanocrystals (NCs), sensitized with the dye zinc β-tetraaminophthalocyanine for operation in the first telecom window. This device shows a high ON/OFF ratio of 6 orders of magnitude in the red spectral region and an unprecedented 4.5 orders of magnitude at 847 nm. By transient absorption spectroscopy, we reveal that this unexpected infrared sensitivity is due to electron transfer from the dye to the CdSe NCs within 5 ps. We show by time-resolved photocurrent measurements that this enables fast rise times during near-infrared optical gating of 47 ± 11 ns. Electronic coupling and accelerated nonradiative recombination of charge carriers at the interface between the dye and the CdSe NCs are further corroborated by steady-state and time-resolved photoluminescence measurements. Field-effect transistor measurements indicate that the increase in photocurrent upon laser illumination is mainly due to the increase in the carrier concentration while the mobility remains unchanged. Our results illustrate that organic dyes as ligands for NCs invoke new optoelectronic functionalities, such as fast optical gating at sub-bandgap optical excitation energies.

Interface properties of CoPc and CoPcF16 on graphene/nickel: influence of germanium intercalation

Photoelectron spectroscopy was used to investigate electronic interface properties and interactions of the organic semiconductors CoPc and CoPcF₁₆ on graphene/nickel based substrates. Additional focus was put on the influence of germanium intercalation of graphene/nickel. The presented results demonstrate that germanium can decouple graphene from nickel and in this manner restore its buffer layer properties. No charge transfer from the substrate to the organic layer is observed in the germanium intercalated case, while interface related peaks in the Co 2p core level spectra indicate such charge transfer on graphene/nickel. Strong interface dipoles are found for CoPcF₁₆ on graphene/nickel and on germanium intercalated graphene/nickel. Fluorine Auger parameters have been measured, and the results provide evidence for polarization and charge transfer screening effects of different amounts at the unlike film-substrate interfaces. The various contributions to the observed shifts are discussed.

Towards Photo-Switchable Transport in Quantum Dot Solids

We use the photochromic organic semiconductor 1,2-Bis(5′-carboxy-2′-methylthien-3′-yl)-cyclopentene (DTCP) to cross-link PbS quantum dots assembled into thin films. The ligand exchange is monitored by means of vibrational spectroscopy (FT-IR) and core-level X-ray photoemission spectroscopy (XPS). Transport measurements in a field-effect transistor (FET) set-up reveal ambipolar behavior with hole and electron mobilities on the order of 10−4 cm2/Vs and 10−5 cm2/Vs, respectively. Exposure to UV light from a 4 W UV lamp does not significantly change the transport properties, indicating that switching of DTCP is hindered in the hybrid film. We find a pronounced photo-conductance with rapid and reversible photo-response on the order of few seconds, which we attribute to (de-)filling of QD trap states. Our results indicate that hybrid, nanostructured networks of PbS QDs cross-linked with DTCP can be obtained by the presented procedure but that switching of the QD-bound DTCP appears to be hindered compared to the pure, unbound molecular species. We discuss future means to address this problem.

[Supralinearity of radiothermoluminescent dosimetry]

The authors studied how supralinearity influences individual "deep trap" terms (or levels) of a glow curve that represents the luminous flux emitted by heated LiF rods as a function of energy required for heating. It is assumed that a Gaussian function can be used for glow curve analysis, developing measured glow curves to represent individual "deep trap" terms. Analysis reveals that supralinearity occurs much earlier and more markedly with high temperature peaks than with low ones. This has a bearing on practice.