1
|
Zhang Y, Tian H, Li H, Yoon C, Nelson RA, Li Z, Watanabe K, Taniguchi T, Smirnov D, Kawakami RK, Goldberger JE, Zhang F, Lau CN. Quantum octets in high mobility pentagonal two-dimensional PdSe 2. Nat Commun 2024; 15:761. [PMID: 38278796 PMCID: PMC10817936 DOI: 10.1038/s41467-024-44972-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/11/2024] [Indexed: 01/28/2024] Open
Abstract
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
Collapse
Affiliation(s)
- Yuxin Zhang
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Haidong Tian
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Huaixuan Li
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Ryan A Nelson
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Ziling Li
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Roland K Kawakami
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Joshua E Goldberger
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA.
| |
Collapse
|
2
|
Tian S, Sun D, Chen F, Wang H, Li C, Yin C. Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices. NANOSCALE 2024; 16:1577-1599. [PMID: 38173407 DOI: 10.1039/d3nr05618j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.
Collapse
Affiliation(s)
- Siying Tian
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Dapeng Sun
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Fengling Chen
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Honghao Wang
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Chaobo Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Chujun Yin
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| |
Collapse
|
3
|
Li Y, Chen S, Yu Z, Li S, Xiong Y, Pam ME, Zhang YW, Ang KW. In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeO x /PdSe 2 Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201488. [PMID: 35393702 DOI: 10.1002/adma.202201488] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/23/2022] [Indexed: 06/14/2023]
Abstract
In-memory computing based on memristor arrays holds promise to address the speed and energy issues of the classical von Neumann computing system. However, the stochasticity of ions' transport in conventional oxide-based memristors imposes severe intrinsic variability, which compromises learning accuracy and hinders the implementation of neural network hardware accelerators. Here, these challenges are addressed using a low-voltage memristor array based on an ultrathin PdSeOx /PdSe2 heterostructure switching medium realized by a controllable ultraviolet (UV)-ozone treatment. A distinctively different ions' transport mechanism is revealed in the heterostructure that can confine the formation of conductive filaments, leading to a remarkable uniform switching with low set and reset voltage variability values of 4.8% and -3.6%, respectively. Moreover, convolutional image processing is further implemented using various crossbar kernels that achieve a high recognition accuracy of ≈93.4% due to the highly linear and symmetric analog weight update as well as multiple conductance states, manifesting its potential beyond von Neumann computing.
Collapse
Affiliation(s)
- Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Department of Microstructure, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shuai Chen
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Zhigen Yu
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yao Xiong
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Mer-Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yong-Wei Zhang
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore, 138634, Singapore
| |
Collapse
|
4
|
Wu D, Xu M, Zeng L, Shi Z, Tian Y, Li XJ, Shan CX, Jie J. In Situ Fabrication of PdSe 2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio. ACS NANO 2022; 16:5545-5555. [PMID: 35324154 DOI: 10.1021/acsnano.1c10181] [Citation(s) in RCA: 31] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe2), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe2/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe2 layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe2-based heterostructure for high-performance polarization-sensitive UV photodetection.
Collapse
Affiliation(s)
- Di Wu
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Mengmeng Xu
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zhifeng Shi
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Yongzhi Tian
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xin Jian Li
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Chong-Xin Shan
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Jiansheng Jie
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| |
Collapse
|
5
|
Wang Y, Pang J, Cheng Q, Han L, Li Y, Meng X, Ibarlucea B, Zhao H, Yang F, Liu H, Liu H, Zhou W, Wang X, Rummeli MH, Zhang Y, Cuniberti G. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics. NANO-MICRO LETTERS 2021; 13:143. [PMID: 34138389 PMCID: PMC8203759 DOI: 10.1007/s40820-021-00660-0] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/11/2021] [Indexed: 05/07/2023]
Abstract
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
Collapse
Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xue Meng
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing, 100088, People's Republic of China
| | - Feng Yang
- Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Haiyun Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, People's Republic of China.
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xiao Wang
- Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen, 518055, People's Republic of China
| | - Mark H Rummeli
- College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, 215006, People's Republic of China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland
- Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany
- Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33, Czech Republic
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| |
Collapse
|