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Yuan Z, Zhao X, Wang C, Hang S, Li M, Liu Y. Exploring Material Properties and Device Output Performance of a Miniaturized Flexible Thermoelectric Generator Using Scalable Synthesis of Bi 2Se 3 Nanoflakes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1937. [PMID: 37446453 DOI: 10.3390/nano13131937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 06/09/2023] [Accepted: 06/21/2023] [Indexed: 07/15/2023]
Abstract
Environmental heat-to-electric energy conversion presents a promising solution for powering sensors in wearable and portable devices. However, the availability of near-room temperature thermoelectric (TE) materials is highly limited, posing a significant challenge in this field. Bi2Se3, as a room-temperature TE material, has attracted much attention. Here, we demonstrate a large-scale synthesis of Bi2Se3 nanoflakes used for the microflexible TE generator. A high-performance micro-TE generator module, utilizing a flexible printed circuit, has been designed and fabricated through the process of screen printing. The TE generator configuration comprises five pairs of PN TE legs. The p-type TE leg utilizes commercially available Sb2Te3 powder, while the n-type TE leg employs Bi2Se3 nanoflakes synthesized in this study. For comparative purposes, we also incorporate commercially available Bi2Se3 powder as an alternative n-type TE leg. The optimal performance of the single-layer microflexible TE generator, employing Bi2Se3 nanoflakes as the active material, is achieved when operating at a temperature differential of 109.5 K, the open-circuit voltage (VOC) is 0.11 V, the short circuit current (ISC) is 0.34 mA, and the maximum output power (PMAX) is 9.5 μW, much higher than the generator consisting of commercial Bi2Se3 powder, which is expected to provide an energy supply for flexible electronic devices.
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Affiliation(s)
- Zicheng Yuan
- Reactor Engineering Sub-Institute, Nuclear Power Institute of China, Chengdu 610213, China
| | - Xueke Zhao
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Canhui Wang
- Reactor Engineering Sub-Institute, Nuclear Power Institute of China, Chengdu 610213, China
| | - Shuang Hang
- Inter-University Institute for High Energies, Université Libre de Bruxelles, 1050 Brussels, Belgium
| | - Mengyao Li
- Inter-University Institute for High Energies, Université Libre de Bruxelles, 1050 Brussels, Belgium
| | - Yu Liu
- School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009, China
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Gan Y, Wu CW, Xie ZX, Deng YX, Zhang Y, Zhou WX, Chen XK. Excellent Medium-Temperature Thermoelectric Performance of Monolayer BiOCl. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:7733-7739. [PMID: 35709528 DOI: 10.1021/acs.langmuir.2c00741] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recently, a ternary-layered material BiOCl has elicited intense interest in photocatalysis, environmental remediation, and ultraviolet light detection because of its unique band gap of around 3.6 eV, low toxicity, and earth abundance. In particular, Gibson et al. reported a measurement of the in-plane thermal conductivity of BiOCl experimentally using a four-point-probe method [Science, 373, 1017-1022 (2021)], which is only 1.25 W/m K at 300 K. Motivated by the work, we studied the thermoelectric property of monolayer BiOCl using first-principles calculations combined with the Boltzmann transport equation. The calculated phonon thermal conductivity of monolayer BiOCl is 3 W/m K at 300 K, which is far below that of other promising 2D thermoelectric materials like graphyne and MoS2. A comprehensive analysis of phonon modes is conducted to reveal the low thermal conductivity. Moreover, the maximal ZT value is as high as 1.8 at 300 K and 5.7 at 800 K for the p-type doping with the 2 × 1015 cm-2 concentration. More importantly, we found that the thermoelectric efficiency of such 2D materials is significantly enhanced to 8 at 800 K by applying 1.5% tensile strain, which clearly outperforms that of the reported 2D thermoelectric material SnSe. The results shed light on the promising application in medium-temperature (600-900 K) thermoelectric devices.
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Affiliation(s)
- Yan Gan
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Chen-Wei Wu
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Zhong-Xiang Xie
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China
| | - Yuan-Xiang Deng
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China
| | - Yong Zhang
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China
| | - Wu-Xing Zhou
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Xue-Kun Chen
- School of Mathematics and Physics, University of South China, Hengyang 421001, People's Republic of China
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Wang Z, Dai J, Wang J, Li X, Pei C, Liu Y, Yan J, Wang L, Li S, Li H, Wang X, Huang X, Huang W. Realization of Oriented and Nanoporous Bismuth Chalcogenide Layers via Topochemical Heteroepitaxy for Flexible Gas Sensors. RESEARCH (WASHINGTON, D.C.) 2022; 2022:9767651. [PMID: 35935140 PMCID: PMC9275095 DOI: 10.34133/2022/9767651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2022] [Accepted: 05/24/2022] [Indexed: 11/06/2022]
Abstract
Most van der Waals two-dimensional (2D) materials without surface dangling bonds show limited surface activities except for their edge sites. Ultrathin Bi2Se3, a topological insulator that behaves metal-like under ambient conditions, has been overlooked on its surface activities. Herein, through a topochemical conversion process, ultrathin nanoporous Bi2Se3 layers were epitaxially deposited on BiOCl nanosheets with strong electronic coupling, leading to hybrid electronic states with further bandgap narrowing. Such oriented nanoporous Bi2Se3 layers possessed largely exposed active edge sites, along with improved surface roughness and film forming ability even on inkjet-printed flexible electrodes. Superior room-temperature NO2 sensing performance was achieved compared to other 2D materials under bent conditions. Our work demonstrates that creating nanoscale features in 2D materials through topochemical heteroepitaxy is promising to achieve both favorable electronic properties and surface activity toward practical applications.
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Affiliation(s)
- Zhiwei Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Jie Dai
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jian Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xinzhe Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chengjie Pei
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yanlei Liu
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jiaxu Yan
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Lin Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Shaozhou Li
- Key Laboratory for Organic Electronic & Information Displays (KLOEID) and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Hai Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xiaoshan Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory for Organic Electronic & Information Displays (KLOEID) and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
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Li Z, Li D, Wang H, Chen P, Pi L, Zhou X, Zhai T. Intercalation Strategy in 2D Materials for Electronics and Optoelectronics. SMALL METHODS 2021; 5:e2100567. [PMID: 34928056 DOI: 10.1002/smtd.202100567] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2021] [Revised: 07/24/2021] [Indexed: 05/21/2023]
Abstract
Intercalation is an effective approach to tune the physical and chemical properties of 2D materials due to their abundant van der Waals gaps that can host high-density intercalated guest matters. This approach has been widely employed to modulate the optical, electrical, and photoelectrical properties of 2D materials for their applications in electronic and optoelectronic devices. Thus it is necessary to review the recent progress of the intercalation strategy in 2D materials and their applications in devices. Herein, various intercalation strategies and the novel properties of the intercalated 2D materials as well as their applications in electronics and optoelectronics are summarized. In the end, the development tendency of this promising approach for 2D materials is also outlined.
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Affiliation(s)
- Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Sondors R, Kunakova G, Jasulaneca L, Andzane J, Kauranens E, Bechelany M, Erts D. High-Yield Growth and Tunable Morphology of Bi 2Se 3 Nanoribbons Synthesized on Thermally Dewetted Au. NANOMATERIALS 2021; 11:nano11082020. [PMID: 34443851 PMCID: PMC8401543 DOI: 10.3390/nano11082020] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Revised: 07/30/2021] [Accepted: 08/05/2021] [Indexed: 11/16/2022]
Abstract
The yield and morphology (length, width, thickness) of stoichiometric Bi2Se3 nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8–150 nm formed by dewetting Au layers of thicknesses 1.5–16 nm. The highest yield of the Bi2Se3 nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times. The mean lengths and thicknesses of the Bi2Se3 nanoribbons are directly proportional to the mean diameters of Au catalyst nanoparticles. In contrast, the mean widths of the Bi2Se3 nanoribbons do not show a direct correlation with the Au nanoparticle size as they depend on the contribution ratio of two main growth mechanisms—catalyst-free and vapor–liquid–solid deposition. The Bi2Se3 nanoribbon growth mechanisms in relation to the Au catalyst nanoparticle size and areal number density are discussed. Determined charge transport characteristics confirm the high quality of the synthesized Bi2Se3 nanoribbons, which, together with the high yield and tunable morphology, makes these suitable for application in a variety of nanoscale devices.
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Affiliation(s)
- Raitis Sondors
- Institute of Chemical Physics, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia; (R.S.); (G.K.); (L.J.); (J.A.); (E.K.)
| | - Gunta Kunakova
- Institute of Chemical Physics, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia; (R.S.); (G.K.); (L.J.); (J.A.); (E.K.)
| | - Liga Jasulaneca
- Institute of Chemical Physics, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia; (R.S.); (G.K.); (L.J.); (J.A.); (E.K.)
| | - Jana Andzane
- Institute of Chemical Physics, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia; (R.S.); (G.K.); (L.J.); (J.A.); (E.K.)
| | - Edijs Kauranens
- Institute of Chemical Physics, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia; (R.S.); (G.K.); (L.J.); (J.A.); (E.K.)
| | - Mikhael Bechelany
- Institut Européen des Membranes, IEM-UMR 5635, ENSCM, CNRS, University of Montpellier, Place Eugène Bataillon, 34095 Montpellier, France;
| | - Donats Erts
- Institute of Chemical Physics, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia; (R.S.); (G.K.); (L.J.); (J.A.); (E.K.)
- Faculty of Chemistry, University of Latvia, 19 Raina Blvd., LV-1586 Riga, Latvia
- Correspondence:
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Gholami Z, Khoeini F. Vacancy tuned thermoelectric properties and high spin filtering performance in graphene/silicene heterostructures. Sci Rep 2021; 11:15320. [PMID: 34321550 PMCID: PMC8319332 DOI: 10.1038/s41598-021-94842-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2021] [Accepted: 07/12/2021] [Indexed: 02/07/2023] Open
Abstract
The main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green's function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.
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Affiliation(s)
- Zainab Gholami
- grid.412673.50000 0004 0382 4160Department of Physics, University of Zanjan, P.O. Box 45195-313, Zanjan, Iran
| | - Farhad Khoeini
- grid.412673.50000 0004 0382 4160Department of Physics, University of Zanjan, P.O. Box 45195-313, Zanjan, Iran
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