Reconfigurable Two-Dimensional Air-Gap Barristors

A reconfigurable memristor diode based on a CuInP2S6/graphene lateral heterojunction

The conventional reconfiguration of transistors requires an additional independent terminal for controllable gate input, which complicates the device structure and makes circuit integration difficult. In this work, we propose a reconfigurable diode based on a 2D layered copper indium thiophosphate (CIPS) and graphene (Gr) van der Waals lateral heterojunction, exhibiting distinctively bias-dependent reconfiguration. The reconfiguration characteristics include reversible memristive behaviors with a current on/off ratio of about 103 and switchable rectifying polarity with a rectifying ratio of up to 3 × 103. This reconfigurable mechanism arises from the lateral bias-induced migration of Cu+ ions, effectively modulating the barrier height at the CIPS and Gr interface. This work provides a simplified reconfigurable solution for electrostatically modulated circuits.

Reconfigurable Phototransistors Driven by Gate-Dependent Carrier Modulation in WSe2/Ta2NiSe5 van der Waals Heterojunctions

Reconfigurable field-effect transistors (RFETs) offer notable benefits on electronic and optoelectronic logic circuits, surpassing the integration, flexibility, and cost-efficiency of conventional complementary metal-oxide semiconductor transistors. The low on/off current ratio of these transistors remains a considerable impediment in the practical application of RFETs. To overcome these limitations, a van der Waals heterojunction (vdWH) transistor composed of WSe2/Ta2NiSe5 has been proposed. By modulating a single back-gate voltage and source-drain voltage inputs, the transistor achieves a switchable polarity configuration and bidirectional rectification, making it capable of functioning as a gate-controlled bidirectional half-wave rectifier. The proposed RFET exhibits tunable positive/negative photovoltaic responses, advanced optoelectronic performance, and a gate-voltage-dependent reversal of the photodetector position. Detailed energy band diagram studies have shown that the reconfigurability of the device arises from carrier blockage resulting from the type-I band structure and carrier injection modulated by gate-dependent Schottky barriers. Consequently, the reconfigurable WSe2/Ta2NiSe5 vdWH holds significant promise for advanced multifunctional optoelectronic device applications.

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors

Optoelectronic reconfigurable logic gates are promising candidates to meet the multifunctional and energy-efficient requirements of integrated circuits. However, complex device architectures need more power and hinder multifunctional device applications. Here, we design vertical field-effect transistors (VFET) based on the two-dimensional (2D) graphene/MoS2/WSe2/graphene van der Waals heterojunction forming ohmic and Schottky contact. The modulation of the Schottky barrier via gate bias enables the device to switch between positive and negative photocurrents, which can effectively achieve optoelectronic reconfigurable logic gates (XNOR, NOR, NAND, AND, OR, and Inhibit) in a single device. Particularly, the transistor number is reduced by 75% for ("XNOR", "NOR", "NAND") and 83% for ("AND", "OR") gates compared to traditional logic circuits. This work provides a promising route for using a single device to realize optoelectronic reconfigurable logic gates, which can advance the development of high-speed, high-throughput, and intricate data processing in future optical computing applications.

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Engineering van der Waals Contacts by Interlayer Dipoles

Tuning the interfacial Schottky barrier with van der Waals (vdW) contacts is an important solution for two-dimensional (2D) electronics. Here we report that the interlayer dipoles of 2D vdW superlattices (vdWSLs) can be used to engineer vdW contacts to 2D semiconductors. A bipolar WSe2 with Ba6Ta11S28 (BTS) vdW contact was employed to exhibit this strategy. Strong interlayer dipoles can be formed due to charge transfer between the Ba3TaS5 and TaS2 layers. Mechanical exfoliation breaks the superlattice and produces two distinguished surfaces with TaS2 and Ba3TaS5 terminations. The surfaces thus have opposite surface dipoles and consequently different work functions. Therefore, all the devices fall into two categories in accordance with the rectifying direction, which were verified by electrical measurements and scanning photocurrent microscopy. The growing vdWSL family along with the addition surface dipoles enables prospective vdW contact designs and have practical application in nanoelectronics and nano optoelectronics.

Electric Tuning of Vortex Ratchet Effect in NbSe2

Inversion symmetry breaking has played an important role in recent discoveries of nonreciprocal charge transport. Niobium diselenide, for example, lacks an inversion center in the monolayer form and can host prominent nonreciprocal transport property. Here, however, we observe a nonreciprocal transport signal in the second-harmonic channel of bulk-like NbSe2, in which inversion symmetry of the lattice seems preserved. The second-harmonic signal occurs along different in-plane current orientations and appears not only in the vortex-liquid regime but also even in the superconducting fluctuation regime without an applied magnetic field. By adding a direct current (DC) bias, we quantify the symmetry breaking effect in the vortex-liquid regime. The DC bias also suggests that the rectification effect at the contacts may account for the seemingly nonreciprocal transport at zero magnetic field. Our results demonstrate that DC biasing is a useful knob for addressing nonreciprocal charge transport in a wide range of materials.

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the I_ds on/off ratio kept >10⁶. Meanwhile, the static leakage power consumption was suppressed to 10^-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 10⁶ to 2.5 × 10^-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.

Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts

Achieving low contact resistance (R_C ) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS₂ devices are systematically analyzed as a function of top and bottom gate-voltages (V_TG and V_BG ). The semimetal contacts not only significantly reduce R_C but also induce a strong dependence of R_C on V_TG , in sharp contrast to Ti contacts that only modulate R_C by varying V_BG . The anomalous behavior is attributed to the strongly modulated pseudo-junction resistance (R_jun ) by V_TG , resulting from weak Fermi level pinning (FLP) of Sb contacts. In contrast, the resistances under both metallic contacts remain unchanged by V_TG as metal screens the electric field from the applied V_TG . Technology computer aided design simulations further confirm the contribution of V_TG to R_jun , which improves overall R_C of Sb-contacted MoS₂ devices. Consequently, the Sb contact has a distinctive merit in dual-gated (DG) device structure, as it greatly reduces R_C and enables effective gate control by both V_BG and V_TG . The results offer new insight into the development of DG 2D FETs with enhanced contact properties realized by using semimetals.