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Sutter E, Kisslinger K, Unocic RR, Burns K, Hachtel J, Sutter P. Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307372. [PMID: 38054819 DOI: 10.1002/smll.202307372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 11/25/2023] [Indexed: 12/07/2023]
Abstract
Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk-like electronic properties, enhanced optical thickness, and vertical interfaces enabling in-plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near-infrared range both in uniform flakes and single-interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS-GeS1-xSex-GeSe-GeS1-xSex heterostructures with a GeS1-xSex active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy-dispersive X-ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer-scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron-hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS1- xSex) part of the heterostructure.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Kory Burns
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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Wu Y, Zhao Y, Li X, Gao H, Guo Z, Wang D, Luan Y, Wang L. Preparation and Characterization of Bilayer Polymer-Dispersed Liquid Crystals Doped with Gd 2O 3 Nanoparticles and Rhodamine B Base Fluorescent Dye. Molecules 2024; 29:1126. [PMID: 38474638 DOI: 10.3390/molecules29051126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 02/23/2024] [Accepted: 02/29/2024] [Indexed: 03/14/2024] Open
Abstract
Using the polymerization-induced phase separation (PIPS) method, bilayer polymer-dispersed liquid crystal (PDLC) films with a PDLC-PVA-PDLC structure were prepared in this work. It was found that all PDLC performance indexes were affected by polymer mesh size after comparing the microscopic morphology and electro-optical properties of samples with different monomer ratios. Gd2O3 nanoparticles and rhodamine B base fluorescent dyes introduced into the bilayer PDLC optimized the samples' electro-optical properties and developed new functionalities. In addition, the bilayer PDLC doped with Gd2O3 and rhodamine B base held excellent progressive driving functions as well as stable durability properties. Samples doped with Gd2O3 nanoparticles and rhodamine B base also produced excellent anti-counterfeiting effects under UV irradiation at different angles, further exploiting the application potential of PDLC.
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Affiliation(s)
- Yongle Wu
- Xi'an Key Laboratory of Advanced Photo-Electronics Materials and Energy Conversion Device, School of Electronic Information, Xijing University, Xi'an 710123, China
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yuzhen Zhao
- Xi'an Key Laboratory of Advanced Photo-Electronics Materials and Energy Conversion Device, School of Electronic Information, Xijing University, Xi'an 710123, China
| | - Xun Li
- Xi'an Key Laboratory of Advanced Photo-Electronics Materials and Energy Conversion Device, School of Electronic Information, Xijing University, Xi'an 710123, China
| | - Hong Gao
- Division of Material Engineering, China Academy of Space Technology, Beijing 100094, China
| | - Zhun Guo
- Xi'an Key Laboratory of Advanced Photo-Electronics Materials and Energy Conversion Device, School of Electronic Information, Xijing University, Xi'an 710123, China
| | - Dong Wang
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yi Luan
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Lei Wang
- Key Laboratory of Chemical Additives for China National Light Industry, Shaanxi Key Laboratory of Chemical Additives for Industry, College of Chemistry & Chemical Engineering, Shaanxi University of Science & Technology, Xi'an 710021, China
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Fukui T, Nishimura T, Miyata Y, Ueno K, Taniguchi T, Watanabe K, Nagashio K. Single-Gate MoS 2 Tunnel FET with a Thickness-Modulated Homojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8993-9001. [PMID: 38324211 DOI: 10.1021/acsami.3c15535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Two-dimensional (2D) materials stand as a promising platform for tunnel field-effect transistors (TFETs) in the pursuit of low-power electronics for the Internet of Things era. This promise arises from their dangling bond-free van der Waals heterointerface. Nevertheless, the attainment of high device performance is markedly impeded by the requirement of precise control over the 2D assembly with multiple stacks of different layers. In this study, we addressed a thickness-modulated n/p+-homojunction prepared from Nb-doped p+-MoS2 crystal, where the issue on interface traps can be neglected without any external interface control due to the homojunction. Notably, our observations reveal the existence of a negative differential resistance, even at room temperature (RT). This signifies the successful realization of TFET operation under type III band alignment conditions by a single gate at RT, suggesting that the dominant current mechanism is band-to-band tunneling due to the ideal interface.
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Affiliation(s)
- Tomohiro Fukui
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Ibaraki 305-0044, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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