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Wang M, Luo Y, Wang T, Wan C, Pan L, Pan S, He K, Neo A, Chen X. Artificial Skin Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003014. [PMID: 32930454 DOI: 10.1002/adma.202003014] [Citation(s) in RCA: 105] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 06/03/2020] [Indexed: 05/23/2023]
Abstract
Skin is the largest organ, with the functionalities of protection, regulation, and sensation. The emulation of human skin via flexible and stretchable electronics gives rise to electronic skin (e-skin), which has realized artificial sensation and other functions that cannot be achieved by conventional electronics. To date, tremendous progress has been made in data acquisition and transmission for e-skin systems, while the implementation of perception within systems, that is, sensory data processing, is still in its infancy. Integrating the perception functionality into a flexible and stretchable sensing system, namely artificial skin perception, is critical to endow current e-skin systems with higher intelligence. Here, recent progress in the design and fabrication of artificial skin perception devices and systems is summarized, and challenges and prospects are discussed. The strategies for implementing artificial skin perception utilize either conventional silicon-based circuits or novel flexible computing devices such as memristive devices and synaptic transistors, which enable artificial skin to surpass human skin, with a distributed, low-latency, and energy-efficient information-processing ability. In future, artificial skin perception would be a new enabling technology to construct next-generation intelligent electronic devices and systems for advanced applications, such as robotic surgery, rehabilitation, and prosthetics.
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Affiliation(s)
- Ming Wang
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Yifei Luo
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Wang
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Changjin Wan
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Liang Pan
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Shaowu Pan
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ke He
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Aden Neo
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xiaodong Chen
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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Gong Z. Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:842. [PMID: 33806237 PMCID: PMC8065746 DOI: 10.3390/nano11040842] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 03/16/2021] [Accepted: 03/22/2021] [Indexed: 02/07/2023]
Abstract
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.
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Affiliation(s)
- Zheng Gong
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China;
- Foshan Debao Display Technology Co Ltd., Room 508-1, Level 5, Block A, Golden Valley Optoelectronics, Nanhai District, Foshan 528200, China
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Hui LS, Munir M, Vuong A, Hilke M, Wong V, Fanchini G, Scharber MC, Sariciftci NS, Turak A. Universal Transfer Printing of Micelle-Templated Nanoparticles Using Plasma-Functionalized Graphene. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46530-46538. [PMID: 32940032 PMCID: PMC7564086 DOI: 10.1021/acsami.0c12178] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2020] [Accepted: 09/17/2020] [Indexed: 06/11/2023]
Abstract
Nanostructure incorporation into devices plays a key role in improving performance, yet processes for preparing two-dimensional (2D) arrays of colloidal nanoparticles tend not to be universally applicable, particularly for soft and oxygen-sensitive substrates for organic and perovskite-based electronics. Here, we show a method of transferring reverse micelle-deposited (RMD) nanoparticles (perovskite and metal oxide) on top of an organic layer, using a functionalized graphene carrier layer for transfer printing. As the technique can be applied universally to RMD nanoparticles, we used magnetic (γ-Fe2O3) and luminescent (methylammonium lead bromide (MAPbBr3)) nanoparticles to validate the transfer-printing methodology. The strong photoluminescence from the MAPbBr3 under UV illumination and high intrinsic field of the γ-Fe2O3 as measured by magnetic force microscopy (MFM), coupled with Raman measurements of the graphene layer, confirm that all components survive the transfer-printing process with little loss of properties. Such an approach to introducing uniform 2D arrays of nanoparticles onto sensitive substrates opens up new avenues to tune the device interfacial properties.
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Affiliation(s)
- Lok Shu Hui
- Department
of Engineering Physics, McMaster University, Hamilton L8S 4L7, Ontario, Canada
| | - Muhammad Munir
- Department
of Engineering Physics, McMaster University, Hamilton L8S 4L7, Ontario, Canada
| | - An Vuong
- Department
of Physics, McGill University, Montreal H3A 2T8, Quebec, Canada
| | - Michael Hilke
- Department
of Physics, McGill University, Montreal H3A 2T8, Quebec, Canada
| | - Victor Wong
- Department
of Physics and Astronomy, University of
Western Ontario, London N6A 3K7, Ontario, Canada
| | - Giovanni Fanchini
- Department
of Physics and Astronomy, University of
Western Ontario, London N6A 3K7, Ontario, Canada
| | - Markus Clark Scharber
- Linz
Institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University, Linz 4040, Austria
| | - Niyazi Serdar Sariciftci
- Linz
Institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University, Linz 4040, Austria
| | - Ayse Turak
- Department
of Engineering Physics, McMaster University, Hamilton L8S 4L7, Ontario, Canada
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Torreblanca González J, García Ovejero R, Lozano Murciego Á, Villarrubia González G, De Paz JF. Effects of Environmental Conditions and Composition on the Electrical Properties of Textile Fabrics. SENSORS 2019; 19:s19235145. [PMID: 31771276 PMCID: PMC6928963 DOI: 10.3390/s19235145] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2019] [Revised: 11/03/2019] [Accepted: 11/22/2019] [Indexed: 11/27/2022]
Abstract
In our day to day life, the environmental conditions, and especially the temperature and humidity of the air that surrounds us, go unnoticed. However, in many cases, these parameters play an important role in the use of materials since they modify their electrical properties. It is necessary to predict what this behaviour will be as these environmental conditions can introduce or improve desirable properties in the material, especially of textiles. The nature of these is to be dielectric, and therefore have a minimal DC electrical conductivity that is currently impossible to measure directly, so a methodology has been proposed to obtain the DC electrical resistivity through the method of discharging a condenser. For this purpose, a system was developed based on a static voltmeter, a climatic chamber and a control and data capture units. In order to validate the proposed system and methodology a study using both is described in this work. The study made it possible to verify that the most influential factor in establishing the values of the electrical parameters of a textile material is the nature of the fibres of which it is composed, although the influence of environmental conditions in fibres is also significant.
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Carey T, Cacovich S, Divitini G, Ren J, Mansouri A, Kim JM, Wang C, Ducati C, Sordan R, Torrisi F. Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics. Nat Commun 2017; 8:1202. [PMID: 29089495 PMCID: PMC5663939 DOI: 10.1038/s41467-017-01210-2] [Citation(s) in RCA: 147] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2017] [Accepted: 08/30/2017] [Indexed: 11/08/2022] Open
Abstract
Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V-1 s-1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.
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Affiliation(s)
- Tian Carey
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Stefania Cacovich
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage road, Cambridge, CB3 0FS, UK
| | - Giorgio Divitini
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage road, Cambridge, CB3 0FS, UK
| | - Jiesheng Ren
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
- Key Laboratory of Eco-Textile, Ministry of Education, School of Textiles and Clothing, Jiangnan University, 214122, Wuxi, China
| | - Aida Mansouri
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, 22100, Como, Italy
| | - Jong M Kim
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Chaoxia Wang
- Key Laboratory of Eco-Textile, Ministry of Education, School of Textiles and Clothing, Jiangnan University, 214122, Wuxi, China
| | - Caterina Ducati
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage road, Cambridge, CB3 0FS, UK
| | - Roman Sordan
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, 22100, Como, Italy
| | - Felice Torrisi
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK.
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Zhang JX, Liu S, Yan C, Wang XJ, Wang L, Yu YM, Li SY. Abrasion properties of self-suspended hairy titanium dioxide nanomaterials. APPLIED NANOSCIENCE 2017. [DOI: 10.1007/s13204-017-0607-6] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Hussain AM, Hussain MM. CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:4219-49. [PMID: 26607553 DOI: 10.1002/adma.201504236] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2015] [Revised: 09/28/2015] [Indexed: 05/03/2023]
Abstract
Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.
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Affiliation(s)
- Aftab M Hussain
- Integrated Nanotechnology Laboratory, Computer Electrical and Mathematical Science and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Muhammad M Hussain
- Integrated Nanotechnology Laboratory, Computer Electrical and Mathematical Science and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
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