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Hammarberg S, Dzhigaev D, Marçal LAB, Dagytė V, Björling A, Borgström MT, Wallentin J. Fast nanoscale imaging of strain in a multi-segment heterostructured nanowire with 2D Bragg ptychography. J Appl Crystallogr 2024; 57:60-70. [PMID: 38322717 PMCID: PMC10840305 DOI: 10.1107/s1600576723010403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 12/03/2023] [Indexed: 02/08/2024] Open
Abstract
Developing semiconductor devices requires a fast and reliable source of strain information with high spatial resolution and strain sensitivity. This work investigates the strain in an axially heterostructured 180 nm-diameter GaInP nanowire with InP segments of varying lengths down to 9 nm, simultaneously probing both materials. Scanning X-ray diffraction (XRD) is compared with Bragg projection ptychography (BPP), a fast single-projection method. BPP offers a sufficient spatial resolution to reveal fine details within the largest segments, unlike scanning XRD. The spatial resolution affects the quantitative accuracy of the strain maps, where BPP shows much-improved agreement with an elastic 3D finite element model compared with scanning XRD. The sensitivity of BPP to small deviations from the Bragg condition is systematically investigated. The experimental confirmation of the model suggests that the large lattice mismatch of 1.52% is accommodated without defects.
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Affiliation(s)
- Susanna Hammarberg
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Dmitry Dzhigaev
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Lucas A. B. Marçal
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
- MAX IV Laboratory, Lund University, Lund 22100, Sweden
| | - Vilgailė Dagytė
- Solid State Physics and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | | | - Magnus T. Borgström
- Solid State Physics and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Jesper Wallentin
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
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2
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Schulz A, Harteveld CAM, Vancso GJ, Huskens J, Cloetens P, Vos WL. Targeted Positioning of Quantum Dots Inside 3D Silicon Photonic Crystals Revealed by Synchrotron X-ray Fluorescence Tomography. ACS NANO 2022; 16:3674-3683. [PMID: 35187934 PMCID: PMC8945387 DOI: 10.1021/acsnano.1c06915] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Accepted: 01/19/2022] [Indexed: 06/14/2023]
Abstract
It is a major outstanding goal in nanotechnology to precisely position functional nanoparticles, such as quantum dots, inside a three-dimensional (3D) nanostructure in order to realize innovative functions. Once the 3D positioning is performed, the challenge arises how to nondestructively verify where the nanoparticles reside in the 3D nanostructure. Here, we study 3D photonic band gap crystals made of Si that are infiltrated with PbS nanocrystal quantum dots. The nanocrystals are covalently bonded to polymer brush layers that are grafted to the Si-air interfaces inside the 3D nanostructure using surface-initiated atom transfer radical polymerization (SI-ATRP). The functionalized 3D nanostructures are probed by synchrotron X-ray fluorescence (SXRF) tomography that is performed at 17 keV photon energy to obtain large penetration depths and efficient excitation of the elements of interest. Spatial projection maps were obtained followed by tomographic reconstruction to obtain the 3D atom density distribution with 50 nm voxel size for all chemical elements probed: Cl, Cr, Cu, Ga, Br, and Pb. The quantum dots are found to be positioned inside the 3D nanostructure, and their positions correlate with the positions of elements characteristic of the polymer brush layer and the ATRP initiator. We conclude that X-ray fluorescence tomography is very well suited to nondestructively characterize 3D nanomaterials with photonic and other functionalities.
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Affiliation(s)
- Andreas
S. Schulz
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
- Molecular
Nanofabrication (MNF), MESA+ Institute for Nanotechnology, University of Twente,
P.O. Box 217, 7500 AE Enschede, The Netherlands
- Materials
Science and Technology of Polymers (MTP), MESA+ Institute for Nanotechnology, University of Twente,
P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Cornelis A. M. Harteveld
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - G. Julius Vancso
- Materials
Science and Technology of Polymers (MTP), MESA+ Institute for Nanotechnology, University of Twente,
P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Jurriaan Huskens
- Molecular
Nanofabrication (MNF), MESA+ Institute for Nanotechnology, University of Twente,
P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Peter Cloetens
- ESRF-The
European Synchrotron, CS40220, 38043 Grenoble, France
| | - Willem L. Vos
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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3
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Schaub E, Ahammou B, Landesman JP. Polarimetric photoluminescence microscope for strain imaging on semiconductor devices. APPLIED OPTICS 2022; 61:1307-1315. [PMID: 35201011 DOI: 10.1364/ao.449825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Accepted: 01/17/2022] [Indexed: 06/14/2023]
Abstract
Anisotropic strain induces a partial linear polarization of the photo-luminescence (PL) emitted by cubic semiconductor crystals such as GaAs or InP. This paper thus presents a polarimetric PL microscope dedicated to the characterization of semiconductor devices. The anisotropic strain is quantified through the determination of the degree of linear polarization (DOLP) of the PL and the angle of this partial linear polarization. We illustrate the possibilities of this tool by mapping the anisotropic strain generated in GaAs by the presence of a stressor film at its surface, that is, a microstructure defined in a dielectric thin film (SiNx) that has been deposited with a built-in stress and shaped into a narrow stripe by lithography and etching. Our setup shows a DOLP resolution as low as 4.5×10-4 on GaAs.
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4
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Kryvyi S, Kret S, Wojnar P. Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction. NANOTECHNOLOGY 2022; 33:195704. [PMID: 34874318 DOI: 10.1088/1361-6528/ac3fe3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2021] [Accepted: 12/03/2021] [Indexed: 06/13/2023]
Abstract
The occurrence of strain is inevitable for the growth of lattice mismatched heterostructures. It affects greatly the mechanical, electrical and optical properties of nano-objects. It is also the case for nanowires which are characterized by a high surface to volume ratio. Thus, the knowledge of the strain distribution in nano-objects is critically important for their implementation into devices. This paper presents an experimental data for II-VI semiconductor system. Scanning nanobeam electron diffraction strain mapping technique for hetero-nanowires characterized by a large lattice mismatch (>6% in the case of CdTe/ZnTe) and containing segments with nano-twins has been described. The spatial resolution of about 2 nm is 10 times better than obtained in synchrotron nanobeam systems. The proposed approach allows us to overcome the difficulties related to nanowire thickness variations during the acquisition of the nano-beam electron diffraction data. In addition, the choice of optimal parameters used for the acquisition of nano-beam diffraction data for strain mapping has been discussed. The knowledge of the strain distribution enables, in our particular case, the improvement of the growth model of extremely strained axial nanowires synthetized by vapor-liquid solid growth mechanism. However, our method can be applied for the strain mapping in nanowire heterostructures grown by any other method.
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Affiliation(s)
- Serhii Kryvyi
- Institute of Physics Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Slawomir Kret
- Institute of Physics Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Piotr Wojnar
- Institute of Physics Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
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5
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Davtyan A, Kriegner D, Holý V, AlHassan A, Lewis RB, McDermott S, Geelhaar L, Bahrami D, Anjum T, Ren Z, Richter C, Novikov D, Müller J, Butz B, Pietsch U. X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires. J Appl Crystallogr 2020; 53:1310-1320. [PMID: 33117111 PMCID: PMC7534542 DOI: 10.1107/s1600576720011516] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Accepted: 08/22/2020] [Indexed: 11/30/2022] Open
Abstract
Core-shell nanowires (NWs) with asymmetric shells allow for strain engineering of NW properties because of the bending resulting from the lattice mismatch between core and shell material. The bending of NWs can be readily observed by electron microscopy. Using X-ray diffraction analysis with a micro- and nano-focused beam, the bending radii found by the microscopic investigations are confirmed and the strain in the NW core is analyzed. For that purpose, a kinematical diffraction theory for highly bent crystals is developed. The homogeneity of the bending and strain is studied along the growth axis of the NWs, and it is found that the lower parts, i.e. close to the substrate/wire interface, are bent less than the parts further up. Extreme bending radii down to ∼3 µm resulting in strain variation of ∼2.5% in the NW core are found.
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Affiliation(s)
- Arman Davtyan
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Dominik Kriegner
- Institut für Festkörper- und Materialphysik, Technical University Dresden and Würzburg–Dresden Cluster of Excellence ct.qmat, Germany
| | - Václav Holý
- Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic
| | - Ali AlHassan
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Ryan B. Lewis
- Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, Canada
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany
| | - Spencer McDermott
- Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, Canada
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany
| | - Danial Bahrami
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Taseer Anjum
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Zhe Ren
- Synchrotron Radiation Research, Lund University, 221 00 Lund, Sweden
| | - Carsten Richter
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Dmitri Novikov
- Deutsches Elektronen-Synchrotron, PETRA III, D-22607 Hamburg, Germany
| | - Julian Müller
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Benjamin Butz
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
| | - Ullrich Pietsch
- Faculty of Science and Engineering, University of Siegen, D-57068 Siegen, Germany
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6
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Sow C, Sarma A, Schropp A, Dzhigaev D, Keller TF, Schroer CG, Sanyal MK, Kulkarni GU. Unraveling the Spatial Distribution of Catalytic Non-Cubic Au Phases in a Bipyramidal Microcrystallite by X-ray Diffraction Microscopy. ACS NANO 2020; 14:9456-9465. [PMID: 32491827 DOI: 10.1021/acsnano.0c02031] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Tuning of crystal structures and shapes of submicrometer-sized noble metals have revealed fascinating catalytic, optical, electrical, and magnetic properties that enable developments of environmentally friendly and durable nanotechnological applications. Several attempts have been made to stabilize Au, knowing its extraordinary stability in its conventional face-centered cubic (fcc) lattice, into different lattices, particularly to develop Au-based catalysis for industry. Here, we report the results from scanning X-ray diffraction microscopy (SXDM) measurements on an ambient-stable penta-twinned bipyramidal Au microcrystallite (about 1.36 μm in length and 230 nm in diameter) stabilized in noncubic lattice, exhibiting catalytic properties. With more than 82% of the crystal volume, the majority crystallite structure is identified as body-centered orthorhombic (bco), while the remainder is the standard fcc. A careful analysis of the diffraction maps reveals that the tips are made up of fcc, while the body contains mainly bco with very high strain. The reported structural imaging technique of representative single crystallite will be useful to investigate the growth mechanism of similar multiphase nano- and micrometer-sized crystals.
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Affiliation(s)
- Chaitali Sow
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Abhisakh Sarma
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg, Germany
| | - Andreas Schropp
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg, Germany
| | - Dmitry Dzhigaev
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg, Germany
| | - Thomas F Keller
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg, Germany
- Physics Department, Universität Hamburg, D-20355 Hamburg, Germany
| | - Christian G Schroer
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg, Germany
- Physics Department, Universität Hamburg, D-20355 Hamburg, Germany
| | - Milan K Sanyal
- Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064, India
| | - Giridhar U Kulkarni
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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7
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Dzhigaev D, Svensson J, Krishnaraja A, Zhu Z, Ren Z, Liu Y, Kalbfleisch S, Björling A, Lenrick F, Balogh ZI, Hammarberg S, Wallentin J, Timm R, Wernersson LE, Mikkelsen A. Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. NANOSCALE 2020; 12:14487-14493. [PMID: 32530025 DOI: 10.1039/d0nr02260h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the small feature sizes and three-dimensional buried structure. Direct strain mapping inside heterostructured GaSb-InAs nanowire tunnel field-effect transistor embedded in dielectric HfO2, W metal gate layers, and an organic spacer is performed using fast scanning X-ray nanodiffraction. The effect of 10 nm W gate on a single embedded nanowire with segment diameters down to 40 nm is retrieved. The tensile strain values reach 0.26% in the p-type GaSb segment of the transistor. Supported by the finite element method simulation, we establish a connection between the Ar pressure used during the W layer deposition and the nanowire strain state. Thus, we can benchmark our models for further improvements in device engineering. Our study indicates, how the significant increase in X-ray brightness at 4th generation synchrotron, makes high-throughput measurements on realistic nanoelectronic devices viable.
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Affiliation(s)
- Dmitry Dzhigaev
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Johannes Svensson
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Abinaya Krishnaraja
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Zhongyunshen Zhu
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Zhe Ren
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Yi Liu
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | | | | | - Filip Lenrick
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | | | - Susanna Hammarberg
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Jesper Wallentin
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Rainer Timm
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
| | - Lars-Erik Wernersson
- Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
| | - Anders Mikkelsen
- Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
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8
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Grishina D, Harteveld CAM, Pacureanu A, Devashish D, Lagendijk A, Cloetens P, Vos WL. X-ray Imaging of Functional Three-Dimensional Nanostructures on Massive Substrates. ACS NANO 2019; 13:13932-13939. [PMID: 31829557 PMCID: PMC6933814 DOI: 10.1021/acsnano.9b05519] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2019] [Accepted: 10/31/2019] [Indexed: 06/10/2023]
Abstract
To investigate the performance of three-dimensional (3D) nanostructures, it is vital to study their internal structure with a methodology that keeps the device fully functional and ready for further integration. To this aim, we introduce here traceless X-ray tomography (TXT) that combines synchrotron X-ray holographic tomography with high X-ray photon energies (17 keV) in order to study nanostructures "as is" on massive silicon substrates. The combined strengths of TXT are a large total sample size to field-of-view ratio and a large penetration depth. We study exemplary 3D photonic band gap crystals made by CMOS-compatible means and obtain real space 3D density distributions with 55 nm spatial resolution. TXT identifies why nanostructures that look similar in electron microscopy have vastly different nanophotonic functionality: one "good" crystal with a broad photonic gap reveals 3D periodicity as designed; a second "bad" structure without a gap reveals a buried void, and a third "ugly" one without gap is shallow due to fabrication errors. Thus, TXT serves to nondestructively differentiate between the possible reasons of not finding the designed and expected performance and is therefore a powerful tool to critically assess 3D functional nanostructures.
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Affiliation(s)
- Diana
A. Grishina
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Cornelis A. M. Harteveld
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | | | - D. Devashish
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Ad Lagendijk
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - Peter Cloetens
- ESRF-The
European Synchrotron, CS40220, 38043 Grenoble, France
| | - Willem L. Vos
- Complex
Photonic Systems (COPS), MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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9
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Romanitan C, Kusko M, Popescu M, Varasteanu P, Radoi A, Pachiu C. Unravelling the strain relaxation processes in silicon nanowire arrays by X-ray diffraction. J Appl Crystallogr 2019. [DOI: 10.1107/s1600576719010707] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
Investigations performed on silicon nanowires of different lengths by scanning electron microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction (XRD), it was found that the shape of the pole figure in reciprocal space is ellipsoidal. This is the signature of lattice defects generated by the relaxation of the strain concentrated in the coalescence regions. This observation is strengthened by the deviation of the XRD peaks from Gaussianity and the appearance of the acoustic phonon mode in the Raman spectrum. It implies that bending, torsion and structural defects coexist in the longer nanowires. To separate these effects, a grazing-incidence XRD technique was conceived which allows the nanowire to be scanned along its entire length. Both ω and φ rocking curves were recorded, and their shapes were used to extract the bending and torsion profiles, respectively, along the nanowire length. Dips were found in both profiles of longer nanowires, while they are absent from shorter ones, and these dips correspond to the regions where both bending and torsion relax. The energy dissipated in the nanowires, which tracks the bending and torsion profiles, has been used to estimate the emergent dislocation density in nanowire arrays.
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10
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Lähnemann J, Hill MO, Herranz J, Marquardt O, Gao G, Al Hassan A, Davtyan A, Hruszkewycz SO, Holt MV, Huang C, Calvo-Almazán I, Jahn U, Pietsch U, Lauhon LJ, Geelhaar L. Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells. NANO LETTERS 2019; 19:4448-4457. [PMID: 31141672 DOI: 10.1021/acs.nanolett.9b01241] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blue-shift of the quantum well emission energy by 75 ± 15 meV in the wurtzite polytype segment. Nanoprobe X-ray diffraction and atom probe tomography enable k·p calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional band gap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Affiliation(s)
- Jonas Lähnemann
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Megan O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Jesús Herranz
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Oliver Marquardt
- Weierstraß-Institut für Angewandte Analysis und Stochastik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Mohrenstr. 39 , 10117 Berlin , Germany
| | - Guanhui Gao
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ali Al Hassan
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Arman Davtyan
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Stephan O Hruszkewycz
- Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Martin V Holt
- Center for Nanoscale Materials , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Chunyi Huang
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Irene Calvo-Almazán
- Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Uwe Jahn
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ullrich Pietsch
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
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11
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Lazarev S, Dzhigaev D, Bi Z, Nowzari A, Kim YY, Rose M, Zaluzhnyy IA, Gorobtsov OY, Zozulya AV, Lenrick F, Gustafsson A, Mikkelsen A, Sprung M, Samuelson L, Vartanyants IA. Structural Changes in a Single GaN Nanowire under Applied Voltage Bias. NANO LETTERS 2018; 18:5446-5452. [PMID: 30033733 DOI: 10.1021/acs.nanolett.8b01802] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
GaN nanowires (NWs) are promising building blocks for future optoelectronic devices and nanoelectronics. They exhibit stronger piezoelectric properties than bulk GaN. This phenomena may be crucial for applications of NWs and makes their study highly important. We report on an investigation of the structure evolution of a single GaN NW under an applied voltage bias along polar [0001] crystallographic direction until its mechanical break. The structural changes were investigated using coherent X-ray Bragg diffraction. The three-dimensional (3D) intensity distributions of the NWs without metal contacts, with contacts, and under applied voltage bias in opposite polar directions were analyzed. Coherent X-ray Bragg diffraction revealed the presence of significant bending of the NWs already after metal contacts deposition, which was increased at applied voltage bias. Employing analytical simulations based on elasticity theory and a finite element method (FEM) approach, we developed a 3D model of the NW bending under applied voltage. From this model and our experimental data, we determined the piezoelectric constant of the GaN NW to be about 7.7 pm/V in [0001] crystallographic direction. The ultimate tensile strength of the GaN NW was obtained to be about 1.22 GPa. Our work demonstrates the power of in operando X-ray structural studies of single NWs for their effective design and implementation with desired functional properties.
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Affiliation(s)
- Sergey Lazarev
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
- National Research Tomsk Polytechnic University (TPU) , Lenin Avenue 30 , 634050 Tomsk , Russia
| | - Dmitry Dzhigaev
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
| | - Zhaoxia Bi
- NanoLund, Department of Physics , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Ali Nowzari
- NanoLund, Department of Physics , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Young Yong Kim
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
| | - Max Rose
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
| | - Ivan A Zaluzhnyy
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) , Kashirskoe shosse 31 , 115409 Moscow , Russia
| | - Oleg Yu Gorobtsov
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
| | - Alexey V Zozulya
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
| | - Filip Lenrick
- NanoLund, Department of Physics , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Anders Gustafsson
- NanoLund, Department of Physics , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Anders Mikkelsen
- NanoLund, Department of Physics , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Michael Sprung
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
| | - Lars Samuelson
- NanoLund, Department of Physics , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Ivan A Vartanyants
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) , Kashirskoe shosse 31 , 115409 Moscow , Russia
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12
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Hill MO, Calvo-Almazan I, Allain M, Holt MV, Ulvestad A, Treu J, Koblmüller G, Huang C, Huang X, Yan H, Nazaretski E, Chu YS, Stephenson GB, Chamard V, Lauhon LJ, Hruszkewycz SO. Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography. NANO LETTERS 2018; 18:811-819. [PMID: 29345956 DOI: 10.1021/acs.nanolett.7b04024] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
III-As nanowires are candidates for near-infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nanofocused X-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 21̅1̅0 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largely unaffected, leaving the band structure unperturbed. Diffraction patterns from the 011̅0 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multiangle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of X-ray radiation, together with the relaxed constraints of maBPP, will enable the in operando imaging of nanowire devices.
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Affiliation(s)
- Megan O Hill
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Irene Calvo-Almazan
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Marc Allain
- Aix-Marseille Univ, CNRS, Centrale Marseille, Institut Fresnel , Marseille 13013, France
| | - Martin V Holt
- Center for Nanoscale Materials, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Andrew Ulvestad
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Julian Treu
- Walter Schottky Institut and Physik Department, Technische Universität München , Garching 85748, Germany
| | - Gregor Koblmüller
- Walter Schottky Institut and Physik Department, Technische Universität München , Garching 85748, Germany
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Xiaojing Huang
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Hanfei Yan
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Evgeny Nazaretski
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Yong S Chu
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - G Brian Stephenson
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Virginie Chamard
- Aix-Marseille Univ, CNRS, Centrale Marseille, Institut Fresnel , Marseille 13013, France
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Stephan O Hruszkewycz
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
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13
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Wallander H, Wallentin J. Simulated sample heating from a nanofocused X-ray beam. JOURNAL OF SYNCHROTRON RADIATION 2017; 24:925-933. [PMID: 28862614 PMCID: PMC5580787 DOI: 10.1107/s1600577517008712] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2017] [Accepted: 06/12/2017] [Indexed: 05/25/2023]
Abstract
Recent developments in synchrotron brilliance and X-ray optics are pushing the flux density in nanofocusing experiments to unprecedented levels, which increases the risk of different types of radiation damage. The effect of X-ray induced sample heating has been investigated using time-resolved and steady-state three-dimensional finite-element modelling of representative nanostructures. Simulations of a semiconductor nanowire indicate that the heat generated by X-ray absorption is efficiently transported within the nanowire, and that the temperature becomes homogeneous after about 5 ns. The most important channel for heat loss is conduction to the substrate, where the heat transfer coefficient and the interfacial area are limiting the heat transport. While convective heat transfer to air is significant, the thermal radiation is negligible. The steady-state average temperature in the nanowire is 8 K above room temperature at the reference parameters. In the absence of heat transfer to the substrate, the temperature increase at the same flux reaches 55 K in air and far beyond the melting temperature in vacuum. Reducing the size of the X-ray focus at constant flux only increases the maximum temperature marginally. These results suggest that the key strategy for reducing the X-ray induced heating is to improve the heat transfer to the surrounding.
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Affiliation(s)
- Harald Wallander
- Synchrotron Radiation Research, Lund University, Box 118, Lund 22100, Sweden
| | - Jesper Wallentin
- Synchrotron Radiation Research, Lund University, Box 118, Lund 22100, Sweden
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14
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Dzhigaev D, Stankevič T, Bi Z, Lazarev S, Rose M, Shabalin A, Reinhardt J, Mikkelsen A, Samuelson L, Falkenberg G, Feidenhans'l R, Vartanyants IA. X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire. ACS NANO 2017; 11:6605-6611. [PMID: 28264155 DOI: 10.1021/acsnano.6b08122] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.
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Affiliation(s)
- Dmitry Dzhigaev
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Tomaš Stankevič
- Niels Bohr Institute, University of Copenhagen , Blegdamsvej 17, 2100 Copenhagen, Denmark
| | - Zhaoxia Bi
- NanoLund, Department of Physics, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
| | - Sergey Lazarev
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
- National Research Tomsk Polytechnic University (TPU) , pr. Lenina 30, 634050 Tomsk, Russia
| | - Max Rose
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Anatoly Shabalin
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Juliane Reinhardt
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Anders Mikkelsen
- NanoLund, Department of Physics, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
| | - Lars Samuelson
- NanoLund, Department of Physics, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden
| | - Gerald Falkenberg
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
| | - Robert Feidenhans'l
- Niels Bohr Institute, University of Copenhagen , Blegdamsvej 17, 2100 Copenhagen, Denmark
| | - Ivan A Vartanyants
- Deutsches Elektronen-Synchrotron DESY , Notkestraße 85, D-22607 Hamburg, Germany
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) , Kashirskoe shosse 31, 115409 Moscow, Russia
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15
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Krause T, Hanke M, Cheng Z, Niehle M, Trampert A, Rosenthal M, Burghammer M, Ledig J, Hartmann J, Zhou H, Wehmann HH, Waag A. Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In,Ga)N/GaN rod light-emitting diodes. NANOTECHNOLOGY 2016; 27:325707. [PMID: 27352816 DOI: 10.1088/0957-4484/27/32/325707] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Employing nanofocus x-ray diffraction, we investigate the local strain field induced by a five-fold (In,Ga)N multi-quantum well embedded into a GaN micro-rod in core-shell geometry. Due to an x-ray beam width of only 150 nm in diameter, we are able to distinguish between individual m-facets and to detect a significant in-plane strain gradient along the rod height. This gradient translates to a red-shift in the emitted wavelength revealed by spatially resolved cathodoluminescence measurements. We interpret the result in terms of numerically derived in-plane strain using the finite element method and subsequent kinematic scattering simulations which show that the driving parameter for this effect is an increasing indium content towards the rod tip.
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Affiliation(s)
- Thilo Krause
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
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