The Native Material Limit of Electron and Hole Mobilities in Semiconductor Nanowires

Scanning Acousto-Optoelectric Spectroscopy on a Transition Metal Dichalcogenide Monolayer

The charge carrier dynamics are investigated by surface acoustic waves (SAWs) inside a WSe2 monolayer on LiNbO3 by scanning acousto-optoelectric spectroscopy. A strong enhancement of the PL emission intensity is observed almost over the entire area of the flake. This enhancement increases with increasing amplitude of the wave and is especially strong at or in the vicinity to defects. The latter is attributed to the SAW-driven Poole-Frenkel activation of trapped charge carriers bound to trapping sites at these defects. In addition, the PL intensity exhibit clear periodic modulations at the SAW's frequency fSAW and at 2 fSAW. These modulations are clear and unambiguous fingerprints of spatio-temporal carrier dynamics driven by the SAW. These occur on sub-nanosecond timescales which are found in good agreement with calculated exciton dissociation times. Mapping and analyzing both effects, this study shows that scanning acousto-electric spectroscopy provides a highly sensitive and local contact-free probe which uncovers distinct local features not resolved by conventional quasi-static photoluminescence techniques. The method is ideally suited to study carrier transport in 2D and other types of nanoscale materials and to reveal dynamic exciton modulation, and carrier localization and activation dynamics in the technologically important megahertz to gigahertz frequency range.

On-chip generation and dynamic piezo-optomechanical rotation of single photons

Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.

Sub-nanosecond acousto-electric carrier redistribution dynamics and transport in polytypic GaAs nanowires

The authors report on a combined structural, optical and acousto-electric study of polytypic GaAs nanowires. Two types of nanowires with different zincblende and wurtzite crystal phase mixing are identified by transmission electron microscopy and photoluminescence spectroscopy. The nanowires exhibit characteristic recombination channels which are assigned to different types of spatially direct recombination (electron and hole within the same crystal phase segment) and spatially indirect recombination (electron and holes localized in different segments). Contact-free acousto-optoelectric spectroscopy is employed to resolve spatiotemporal charge carrier dynamics between different recombination channels induced by a piezoelectric surface acoustic wave. The observed suppression of the emission and its dynamic temporal modulation shows unambiguous fingerprints of the local bandedge variations induced by the crystal phase mixing. A nanowire, which exhibits a variation from a near-pristine zinc blende crystal structure to a highly mixed crystal phase, shows a clear dependence on the propagation direction of the acoustic wave. In contrast, no pronounced directionality is found for a nanowire with an extended near-pristine zincblende segment. The experimental findings are corroborated by solving the drift and diffusion equations of electrons and holes induced by the surface acoustic wave. The key characteristics observed in our experimental data are well reproduced in the numerical simulations by assuming two general bandedge modulations and realistic parameters for the bandedge discontinuities and transport mobilities of electrons and holes. This evidences that even all relevant physical processes are accounted for in the model.

Ultrafast electron cycloids driven by the transverse spin of a surface acoustic wave

Spin-momentum locking is a universal wave phenomenon promising for applications in electronics and photonics. In acoustics, Lord Rayleigh showed that surface acoustic waves exhibit a characteristic elliptical particle motion strikingly similar to spin-momentum locking. Although these waves have become one of the few phononic technologies of industrial relevance, the observation of their transverse spin remained an open challenge. Here, we observe the full spin dynamics by detecting ultrafast electron cycloids driven by the gyrating electric field produced by a surface acoustic wave propagating on a slab of lithium niobate. A tubular quantum well wrapped around a nanowire serves as an ultrafast sensor tracking the full cyclic motion of electrons. Our acousto-optoelectrical approach opens previously unknown directions in the merged fields of nanoacoustics, nanophotonics, and nanoelectronics for future exploration.

Observation and Ultrafast Dynamics of Inter-Sub-Band Transition in InAs Twinning Superlattice Nanowires

A variety of infrared applications rely on semiconductor superlattices, including, notably, the realization of high-power, compact quantum cascade lasers. Requirements for atomically smooth interface and limited lattice matching options set high technical standards for fabricating applicable heterostructure devices. The semiconductor twinning superlattice (TSL) forms in a single compound with periodically spaced twin boundaries and sharp interface junctions and can be grown with convenient synthesis methods. Therefore, employing semiconductor TSL may facilitate the development of optoelectronic applications related to superlattice structures. Here, it is shown that InAs TSL nanowires generate inter-sub-band transition channels due to the band projection and the Bragg-like electron reflection. The findings reveal the physical mechanisms of inter-sub-band transitions in TSL structure and suggest that TSL structures are promising candidates for mid-infrared optoelectronic applications.

Real-Time Electron and Hole Transport Dynamics in Halide Perovskite Nanowires

For optoelectronic devices, high transport mobilities of electrons and holes are desirable, which, moreover, should be close to identical. Acousto-optoelectric spectroscopy is employed to probe the spatiotemporal dynamics of both electrons and holes inside CsPbI3 nanowires. These dynamics are induced without the need for electrical contacts simply by the piezoelectric field of a surface acoustic wave. Its radio frequency of fSAW = 324 MHz natively avoids spurious contributions from ion migration typically occurring in these materials. The observed dynamic modulation of the photoluminescence is faithfully reproduced by solving the drift and diffusion currents of electrons and holes induced by the surface acoustic wave. These calculations confirm that the mobilities of electrons and holes are equal and quantify them to be μe = μh = 3 ± 1 cm2 V-1 s-1. Additionally, carrier loss due to surface recombination is shown to be largely suppressed in CsPbI3 nanowires. Both findings mark significant advantages over traditional compound semiconductors, in particular, GaAs, for applications in future optoelectronic and photovoltaic devices. The demonstrated sublifetime modulation of the optical emission may find direct application in switchable perovskite light-emitting devices employing mature surface acoustic wave technology.

Corner and side localization of electrons in irregular hexagonal semiconductor shells

We discuss the low energy electronic states in hexagonal rings. These states correspond to the transverse modes in core-shell nanowires built of III-V semiconductors which typically have a hexagonal cross section. In the case of symmetric structures the 12 lowest states (including the spin) are localized in the corners, while the next following 12 states are localized mostly on the sides. Depending on the material parameters, in particular the effective mass, the ring diameter and width, the corner and side states may be separated by a considerable energy gap, ranging from few to tens of meV. In a realistic fabrication process geometric asymmetries are unavoidable, and therefore the particles are not symmetrically distributed between all corner and side areas. Possibly, even small deformations may shift the localization of the ground state to one of the sides. The transverse states or the transitions between them may be important in transport or optical experiments. Still, up to date, there are only very few experimental investigations of the localization-dependent properties of core-shell nanowires.

Breakdown of Corner States and Carrier Localization by Monolayer Fluctuations in Radial Nanowire Quantum Wells

We report a comprehensive study of the impact of the structural properties in radial GaAs-Al_0.3Ga_0.7As nanowire-quantum well heterostructures on the optical recombination dynamics and electrical transport properties, emphasizing particularly the role of the commonly observed variations of the quantum well thickness at different facets. Typical thickness fluctuations of the radial quantum well observed by transmission electron microscopy lead to pronounced localization. Our optical data exhibit clear spectral shifts and a multipeak structure of the emission for such asymmetric ring structures resulting from spatially separated, yet interconnected quantum well systems. Charge carrier dynamics induced by a surface acoustic wave are resolved and prove efficient carrier exchange on native, subnanosecond time scales within the heterostructure. Experimental findings are corroborated by theoretical modeling, which unambiguously show that electrons and holes localize on facets where the quantum well is the thickest and that even minute deviations of the perfect hexagonal shape strongly perturb the commonly assumed 6-fold symmetric ground state.

Modulation of terahertz radiation from graphene surface plasmon polaritons via surface acoustic wave

We present a theoretical study of terahertz (THz) radiation induced by surface plasmon polaritons (SPPs) on a graphene layer under modulation by a surface acoustic wave (SAW). In our gedanken experiment, SPPs are excited by an electron beam moving on a graphene layer situated on a piezoelectric MoS₂ flake. Under modulation by the SAW field, charge carriers are periodically distributed over the MoS₂ flake, and this causes periodically distributed permittivity. The periodic permittivity structure of the MoS₂ flake folds the SPP dispersion curve back into the center of the first Brillouin zone, in a manner analogous to a crystal, leading to THz radiation emission with conservation of the wavevectors between the SPPs and the electromagnetic waves. Both the frequency and the intensity of the THz radiation are tuned by adjusting the chemical potential of the graphene layer, the MoS₂ flake doping density, and the wavelength and period of the external SAW field. A maximum energy conversion efficiency as high as ninety percent was obtained from our model calculations. These results indicate an opportunity to develop highly tunable and integratable THz sources based on graphene devices.

A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires

The performance of nanowire-based devices is predominantly affected by nonradiative recombination on their surfaces, or sidewalls, due to large surface-to-volume ratios. A common approach to quantitatively characterize surface recombination is to implement time-resolved photoluminescence to correlate surface recombination velocity with measured minority carrier lifetime by a conventional analytical equation. However, after using numerical simulations based on a three-dimensional (3D) transient model, we assert that the correlation between minority carrier lifetime and surface recombination velocity is dependent on a more complex combination of factors, including nanowire geometry, energy-band alignment, and spatial carrier diffusion in 3D. To demonstrate this assertion, we use three cases-GaAs nanowires, InGaAs nanowires, and InGaAs inserts embedded in GaAs nanowires-and numerically calculate the carrier lifetimes by varying the surface recombination velocities. Using this information, we then investigate the intrinsic carrier dynamics within those 3D structures. We argue that the conventional analytical approach to determining surface recombination in nanowires is of limited applicability, and that a comprehensive computation in 3D can provide more accurate analysis. Our study provides a solid theoretical foundation to further understand surface characteristics and carrier dynamics for 3D nanostructured materials.

Excitons in Core-Shell Nanowires with Polygonal Cross Sections

The distinctive prismatic geometry of semiconductor core-shell nanowires leads to complex localization patterns of carriers. Here, we describe the formation of optically active in-gap excitonic states induced by the interplay between localization of carriers in the corners and their mutual Coulomb interaction. To compute the energy spectra and configurations of excitons created in the conductive shell, we use a multielectron numerical approach based on the exact solution of the multiparticle Hamiltonian for electrons in the valence and conduction bands, which includes the Coulomb interaction in a nonperturbative manner. We expose the formation of well-separated quasidegenerate levels, and focus on the implications of the electron localization in the corners or on the sides of triangular, square, and hexagonal cross sections. We obtain excitonic in-gap states associated with symmetrically distributed electrons in the spin singlet configuration. They acquire large contributions due to Coulomb interaction, and thus are shifted to much higher energies than other states corresponding to the conduction electron and the vacancy localized in the same corner. We compare the results of the multielectron method with those of an electron-hole model, and we show that the latter does not reproduce the singlet excitonic states. We also obtain the exciton lifetime and explain selection rules which govern the recombination process.