In Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System

Hydrogen-Driven Low-Temperature Topotactic Transition in Nanocomb Cobaltite for Ultralow Power Ionic-Magnetic Coupled Applications

We reversibly control ferromagnetic-antiferromagnetic ordering in an insulating ground state by annealing tensile-strained LaCoO3 films in hydrogen. This ionic-magnetic coupling occurs due to the hydrogen-driven topotactic transition between perovskite LaCoO3 and brownmillerite La2Co2O5 at a lower temperature (125-200 °C) and within a shorter time (3-10 min) than the oxygen-driven effect (500 °C, tens of hours). The X-ray and optical spectroscopic analyses reveal that the transition results from hydrogen-driven filling of correlated electrons in the Co 3d-orbitals, which successively releases oxygen by destabilizing the CoO6 octahedra into CoO4 tetrahedra. The transition is accelerated by surface exchange, diffusion of hydrogen in and oxygen out through atomically ordered oxygen vacancy "nanocomb" stripes in the tensile-strained LaCoO3 films. Our ionic-magnetic coupling with fast operation, good reproducibility, and long-term stability is a proof-of-principle demonstration of high-performance ultralow power magnetic switching devices for sensors, energy, and artificial intelligence applications, which are keys for attaining carbon neutrality.

Green synthesis of CaxLa1-xMnO3 with modulation of mesoporous and vacancies for efficient low concentration phosphate adsorption

Phosphate concentrations in eutrophic surface waters are usually low, and efficient removal of low concentration phosphate remains a challenge. In this study, Ca-doped LaMnO3 synthesized at doping ratios, designated as CaxLa1-xMnO3 (x = 0, 0.2, 0.4, 0.7), were compared. It was found that, the adsorption capacity of Ca0.4La0.6MnO3 material reached 63.01 mg/g at pH = 5, increased by 63.6% over the undoped LaMnO3 perovskite. For long-term adsorption, Ca0.4La0.6MnO3 could constantly adsorb phosphate to avoid phosphate accumulation (<0.05 mg/L). This proves that Ca0.4La0.6MnO3 has the ability to control dynamic water eutrophication. Characterization and density functional theory results confirmed that CaxLa1-xMnO3 can increase the content of mesopores and oxygen vacancies, providing additional active sites. This reduces the adsorption energy of the La site, promotes electron transfer, and increases its affinity. It provides a new method for removing low-concentration phosphates.

Topotactically transformable antiphase boundaries with enhanced ionic conductivity

Engineering lattice defects have emerged as a promising approach to effectively modulate the functionality of devices. Particularly, antiphase boundaries (APBs) as planar defects have been considered major obstacles to optimizing the ionic conductivity of mixed ionic-electronic conductors (MIECs) in solid oxide fuel applications. Here our study identifies topotactically transformable APBs (tt-APBs) at the atomic level and demonstrates that they exhibit higher ionic conductivity at elevated temperatures as compared to perfect domains. In-situ observation at the atomic scale tracks dynamic oxygen migration across these tt-APBs, where the abundant interstitial sites between tetrahedrons facilitate the ionic migration. Furthermore, annealing in an oxidized atmosphere can lead to the formation of interstitial oxygen at these APBs. These pieces of evidence clearly clarify that the tt-APBs can contribute to oxygen conductivity as anion diffusion channels, while the topotactically non-transformable APBs cannot. The topotactic transformability opens the way of defect engineering strategies for improving ionic transportation in MIECs.

Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films

The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts are devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, the spin state in epitaxial LaCoO3 thin films is systematically investigated to clarify the mechanism of strain-induced ferromagnetism using element-specific X-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, it is unambiguously demonstrated that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) is practically a low-spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high-spin and low-spin states with a ratio close to 1:3. From the identification of this spin state ratio, it is inferred that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high-spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films. The study highlights the importance of spin state degrees of freedom, along with thin-film strain engineering, in creating new physical properties that do not exist in bulk materials.

Artificially controlled nanoscale chemical reduction in VO2 through electron beam illumination

Chemical reduction in oxides plays a crucial role in engineering the material properties through structural transformation and electron filling. Controlling the reduction at nanoscale forms a promising pathway to harvest functionalities, which however is of great challenge for conventional methods (e.g., thermal treatment and chemical reaction). Here, we demonstrate a convenient pathway to achieve nanoscale chemical reduction for vanadium dioxide through the electron-beam illumination. The electron beam induces both surface oxygen desorption through radiolytic process and positively charged background through secondary electrons, which contribute cooperatively to facilitate the vacancy migration from the surface toward the sample bulk. Consequently, the VO₂ transforms into a reduced V₂O₃ phase, which is associated with a distinct insulator to metal transition at room temperature. Furthermore, this process shows an interesting facet-dependence with the pronounced transformation observed for the c-facet VO₂ as compared with the a-facet, which is attributed to the intrinsically different oxygen vacancy formation energy between these facets. Remarkably, we readily achieve a lateral resolution of tens nanometer for the controlled structural transformation with a commercial scanning electron microscope. This work provides a feasible strategy to manipulate the nanoscale chemical reduction in complex oxides for exploiting functionalities.

Unveiling the Intrinsic Structure and Intragrain Defects of Organic-Inorganic Hybrid Perovskites by Ultralow Dose Transmission Electron Microscopy

Transmission electron microscopy (TEM) is a powerful tool for unveiling the structural, compositional, and electronic properties of organic-inorganic hybrid perovskites (OIHPs) at the atomic to micrometer length scales. However, the structural and compositional instability of OIHPs under electron beam radiation results in misunderstandings of the microscopic structure-property-performance relationship in OIHP devices. Here, ultralow dose TEM is utilized to identify the mechanism of the electron-beam-induced changes in OHIPs and clarify the cumulative electron dose thresholds (critical dose) of different commercially interesting state-of-the-art OIHPs, including methylammonium lead iodide (MAPbI₃ ), formamidinium lead iodide (FAPbI₃ ), FA_0.83 Cs_0.17 PbI₃ , FA_0.15 Cs_0.85 PbI₃ , and MAPb_0.5 Sn_0.5 I₃ . The critical dose is related to the composition of the OIHPs, with FA_0.15 Cs_0.85 PbI₃ having the highest critical dose of ≈84 e Å^-2 and FA_0.83 Cs_0.17 PbI₃ having the lowest critical dose of ≈4.2 e Å^-2 . The electron beam irradiation results in the formation of a superstructure with ordered I and FA vacancies along <110>_c , as identified from the three major crystal axes in cubic FAPbI₃ , <100>_c , <110>_c , and <111>_c . The intragrain planar defects in FAPbI₃ are stable, while an obvious modification is observed in FA_0.83 Cs_0.17 PbI₃ under continuous electron beam exposure. This information can serve as a guide for ensuring a reliable understanding of the microstructure of OIHP optoelectronic devices by TEM.

Probing Electron Beam Induced Transformations on a Single-Defect Level via Automated Scanning Transmission Electron Microscopy

A robust approach for real-time analysis of the scanning transmission electron microscopy (STEM) data streams, based on ensemble learning and iterative training (ELIT) of deep convolutional neural networks, is implemented on an operational microscope, enabling the exploration of the dynamics of specific atomic configurations under electron beam irradiation via an automated experiment in STEM. Combined with beam control, this approach allows studying beam effects on selected atomic groups and chemical bonds in a fully automated mode. Here, we demonstrate atomically precise engineering of single vacancy lines in transition metal dichalcogenides and the creation and identification of topological defects in graphene. The ELIT-based approach facilitates direct on-the-fly analysis of the STEM data and engenders real-time feedback schemes for probing electron beam chemistry, atomic manipulation, and atom by atom assembly.

Double-Bilayer polar nanoregions and Mn antisites in (Ca, Sr)3Mn2O7

The layered perovskite Ca₃Mn₂O₇ (CMO) is a hybrid improper ferroelectric candidate proposed for room temperature multiferroicity, which also displays negative thermal expansion behavior due to a competition between coexisting polar and nonpolar phases. However, little is known about the atomic-scale structure of the polar/nonpolar phase coexistence or the underlying physics of its formation and transition. In this work, we report the direct observation of double bilayer polar nanoregions (db-PNRs) in Ca_2.9Sr_0.1Mn₂O₇ using aberration-corrected scanning transmission electron microscopy (S/TEM). In-situ TEM heating experiments show that the db-PNRs can exist up to 650 °C. Electron energy loss spectroscopy (EELS) studies coupled with first-principles calculations demonstrate that the stabilization mechanism of the db-PNRs is directly related to an Mn oxidation state change (from 4+ to 2+), which is linked to the presence of Mn antisite defects. These findings open the door to manipulating phase coexistence and achieving exotic properties in hybrid improper ferroelectric.

The competition between the polar and nonpolar phase in the prototypical hybrid improper ferroelectric crystal Ca₃Mn₂O₇ leads to exotic properties. Here, the authors directly imaged the crystal at atomic resolution to understand its nanostructure and discovered the double bilayer polar nanoregion.

Defect engineering of oxide surfaces: dream or reality?

In this brief perspective we analyze the present status of the field of defect engineering of oxide surfaces. In particular we discuss the tools and techniques available to generate, identify, quantify, and characterize point defects at oxide surfaces and the main areas where these centers play a role in practical applications.

Deep Eutectic Solvent Synthesis of Perovskite Electrocatalysts for Water Oxidation

Oxide perovskites have attracted great interest as materials for energy conversion due to their stability and structural tunability. La-based perovskites of 3d-transition metals have demonstrated excellent activities as electrocatalysts in water oxidation. Herein, we report the synthesis route to La-based perovskites using an environmentally friendly deep eutectic solvent (DES) consisting of choline chloride and malonic acid. The DES route affords phase-pure crystalline materials on a gram scale and results in perovskites with high electrocatalytic activity for oxygen evolution reaction. A convenient, fast, and scalable synthesis proceeds via assisted metathesis at a lower temperature as compared to traditional solid-state methods. Among LaCoO3, LaMn0.5Ni0.5O3, and LaMnO3 perovskites prepared via the DES route, LaCoO3 was established to be the best-performing electrocatalyst for water oxidation in alkaline medium at 0.25 mg cm-2 mass loading. LaCoO3 exhibits current densities of 10, 50, and 100 mA cm-2 at respective overpotentials of approximately 390, 430, and 470 mV, respectively, and features a Tafel slope of 55.8 mV dec-1. The high activity of LaCoO3 as compared to the other prepared perovskites is attributed to the high concentration of oxygen vacancies in the LaCoO3 lattice, as observed by high-resolution transmission electron microscopy. An intrinsically high concentration of O vacancies in the LaCoO3 synthesized via the DES route is ascribed to the reducing atmosphere attained upon thermal decomposition of the DES components. These findings will contribute to the preparation of highly active perovskites for various energy applications.

Dynamics of Anisotropic Oxygen-Ion Migration in Strained Cobaltites

Orientation control of the oxygen vacancy channel (OVC) is highly desirable for tailoring oxygen diffusion as it serves as a fast transport channel in ion conductors, which is widely exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ion hopping toward preferential vacant sites is a key to clarifying migration pathways. Here we report anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in situ thermal activation in atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to the OVC, determine the crucial role of the tolerance factor for OVC stability, and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable to ionic-oxide electronics.

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

The interaction of oxygen vacancies and ferroelectric domain walls is of great scientific interest because it leads to different domain-structure behaviors. Here, we use high-resolution scanning transmission electron microscopy to study the ferroelectric domain structure and oxygen-vacancy ordering in a compressively strained Bi_0.9Ca_0.1FeO_3-δ thin film. It was found that atomic plates, in which agglomerated oxygen vacancies are ordered, appear without any periodicity between the plates in out-of-plane and in-plane orientation. The oxygen non-stoichiometry with δ ≈ 1 in FeO_2-δ planes is identical in both orientations and shows no preference. Within the plates, the oxygen vacancies form 1D channels in a pseudocubic [010] direction with a high number of vacancies that alternate with oxygen columns with few vacancies. These plates of oxygen vacancies always coincide with charged domain walls in a tail-to-tail configuration. Defects such as ordered oxygen vacancies are thereby known to lead to a pinning effect of the ferroelectric domain walls (causing application-critical aspects, such as fatigue mechanisms and countering of retention failure) and to have a critical influence on the domain-wall conductivity. Thus, intentional oxygen vacancy defect engineering could be useful for the design of multiferroic devices with advanced functionality.

Surface-Electronic-Structure Reconstruction of Perovskite via Double-Cation Gradient Etching for Superior Water Oxidation

Reconstructing the surface-electronic-structure of catalysts for efficient electrocatalytic activity is crucial but still under intense exploration. Herein, we introduce a double-cation gradient etching technique to manipulate the electronic structure of perovskite LaCoO₃. With the gradient dissolution of cations, the surface was reconstructed, and the perovskite/spinel heterostructure V-LCO/Co₃O₄ (V-LCO refers to LaCoO₃ with La and Co vacancies) can be realized. Its surface-electronic-structure is effectively regulated due to the heterogeneous interface effect and abundant vacancies, resulting in a significantly enhanced activity for oxygen evolution reaction (OER). The V-LCO/Co₃O₄ exhibits low electrochemical activation energy and 2 orders of magnitude higher carrier concentrations (1.36 × 10²¹ cm^-3) compared with LCO (6.03 × 10¹⁹ cm^-3). Density functional theory (DFT) calculation unveils that the directional reconstruction of surface-electronic-structure enables the d-band center of V-LCO/Co₃O₄ to a moderate position, endowing perfect adsorption strength for oxo groups and thus promoting the electrocatalytic activity.

Engineering Individual Oxygen Vacancies: Domain-Wall Conductivity and Controllable Topological Solitons

Nanoscale devices that utilize oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to conductive, magnetic, and even superconductive functionalities they exhibit. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects and hence are attractive for next-generation data technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of individual oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale electric-field, charge, dipole-moment, and strain distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. The engineered vacancies were used to form quasi-linear quadrupole topological defects. Significant intraband states were found in the unit cell of the engineered vacancies, proposing a meaningful domain-wall conductivity for miniaturized data-storage applications. Reduction of the Ti ion as well as enhanced charging and electric-field concentration were demonstrated near the vacancy. A 3-5% tensile strain was observed at the immediate surrounding unit cells of the vacancies. Engineering individual oxygen vacancies and topological solitons thus offers a platform for predetermining both atomic-scale and global functional properties of device miniaturization in metal oxides.

Exploring order parameters and dynamic processes in disordered systems via variational autoencoders

We suggest and implement an approach for the bottom-up description of systems undergoing large-scale structural changes and chemical transformations from dynamic atomically resolved imaging data, where only partial or uncertain data on atomic positions are available. This approach is predicated on the synergy of two concepts, the parsimony of physical descriptors and general rotational invariance of noncrystalline solids, and is implemented using a rotationally invariant extension of the variational autoencoder applied to semantically segmented atom-resolved data seeking the most effective reduced representation for the system that still contains the maximum amount of original information. This approach allowed us to explore the dynamic evolution of electron beam-induced processes in a silicon-doped graphene system, but it can be also applied for a much broader range of atomic scale and mesoscopic phenomena to introduce the bottom-up order parameters and explore their dynamics with time and in response to external stimuli.

Reducing Time to Discovery: Materials and Molecular Modeling, Imaging, Informatics, and Integration

Multiscale and multimodal imaging of material structures and properties provides solid ground on which materials theory and design can flourish. Recently, KAIST announced 10 flagship research fields, which include KAIST Materials Revolution: Materials and Molecular Modeling, Imaging, Informatics and Integration (M3I3). The M3I3 initiative aims to reduce the time for the discovery, design and development of materials based on elucidating multiscale processing-structure-property relationship and materials hierarchy, which are to be quantified and understood through a combination of machine learning and scientific insights. In this review, we begin by introducing recent progress on related initiatives around the globe, such as the Materials Genome Initiative (U.S.), Materials Informatics (U.S.), the Materials Project (U.S.), the Open Quantum Materials Database (U.S.), Materials Research by Information Integration Initiative (Japan), Novel Materials Discovery (E.U.), the NOMAD repository (E.U.), Materials Scientific Data Sharing Network (China), Vom Materials Zur Innovation (Germany), and Creative Materials Discovery (Korea), and discuss the role of multiscale materials and molecular imaging combined with machine learning in realizing the vision of M3I3. Specifically, microscopies using photons, electrons, and physical probes will be revisited with a focus on the multiscale structural hierarchy, as well as structure-property relationships. Additionally, data mining from the literature combined with machine learning will be shown to be more efficient in finding the future direction of materials structures with improved properties than the classical approach. Examples of materials for applications in energy and information will be reviewed and discussed. A case study on the development of a Ni-Co-Mn cathode materials illustrates M3I3's approach to creating libraries of multiscale structure-property-processing relationships. We end with a future outlook toward recent developments in the field of M3I3.

Two-dimensional magnetic interplay in the tensile-strained LaCoO3 thin films

High-quality epitaxial LaCoO₃ (LCO) thin films have been deposited on SrTiO₃ (STO) substrates with pulsed laser deposition (PLD). We find that the LCO films undergo a typical ferromagnetic-paramagnetic (FM-PM) phase transition at ∼80 K. To understand the nature of magnetic phase transition, various methods, including the modified Arrott plot and critical isotherm analysis, were used to determine the critical exponents, which are β = 0.754(1) with a Curie temperature T_C = 79.8(8) K and γ = 1.52(2) with T_C = 79.9(2) K. The reliability of these critical exponents was confirmed using the Widom scaling relation and the scaling hypothesis. Further analysis revealed that the spin coupling within the LCO films exhibits two-dimensional (2D) long-range magnetic interaction and the magnetic exchange distance decays as J(r) ∼r^-(3.46). Our critical behavior analysis may shed new light on the further understanding of the origin of FM and the relatively fixed T_C in LCO thin films.

Probing One-Dimensional Oxygen Vacancy Channels Driven by Cation-Anion Double Ordering in Perovskites

Visualizing the oxygen vacancy distributions is highly desirable for understanding the atomistic oxygen diffusion mechanisms in perovskites. In particular, the direct observation of the one-dimensional oxygen vacancy channels has not yet been achieved in perovskites with dual ion (i.e., cation and anion) ordering. Here, we perform atomic-resolution imaging of the one-dimensional oxygen vacancy channels and their structural dynamics in a NdBaCo₂O_5.5 double perovskite oxide. An in situ heating transmission electron microscopy investigation reveals the disordering of oxygen vacancy channels by local rearrangement of oxygen vacancies at the specific temperature. A density functional theory calculation suggests that the possible pathway of oxygen vacancy migration is a multistep route via Co-O and Nd-O_v (oxygen vacancy) sites. These findings could provide robust guidance for understanding the static and dynamic behaviors of oxygen vacancies in perovskite oxides.

General Decomposition Pathway of Organic-Inorganic Hybrid Perovskites through an Intermediate Superstructure and its Suppression Mechanism

Organic-inorganic hybrid perovskites (OIHPs) have generated considerable excitement due to their promising photovoltaic performance. However, the commercialization of perovskite solar cells (PSCs) is still plagued by the structural degradation of the OIHPs. Here, the decomposition mechanism of OIHPs under electron beam irradiation is investigated via transmission electron microscopy, and a general decomposition pathway for both tetragonal CH₃ NH₃ PbI₃ and cubic CH₃ NH₃ PbBr₃ is uncovered through an intermediate superstructure state of CH₃ NH₃ PbX_2.5 , X = I, Br, with ordered vacancies into final lead halides. Such decomposition can be suppressed via carbon coating by stabilization of the perovskite structure framework. These findings reveal the general degradation pathway of OIHPs and suggest an effective strategy to suppress it, and the atomistic insight learnt may be useful for improving the stability of PSCs.

Nanoscale Phase Mixture and Multifield-Induced Topotactic Phase Transformation in SrFeOx

Nanoscale phase mixtures in transition-metal oxides (TMOs) often render these materials susceptible to external stimuli (electric field, mechanical stress, etc.), which can lead to rich functional properties and device applications. Here, direct observation and multifield manipulation of a nanoscale mixture of brownmillerite SrFeO_2.5 (BM-SFO) and perovskite SrFeO₃ (PV-SFO) phases in SrFeO_x (SFO) epitaxial thin films are reported. The mixed-phase SFO film in its pristine state exhibits a nanoscaffold structure consisting of PV-SFO nanodomains embedded in the BM-SFO matrix. This nanoscaffold structure produces gridlike patterns in the current and electrochemical strain maps, owing to the strikingly different electrical and electrochemical properties of BM-SFO and PV-SFO. Moreover, electric field control of reversible topotactic phase transformation between BM-SFO and PV-SFO is demonstrated by electric-field-induced reversible changes in surface height, conductance, and electrochemical strain response. In addition, it is also shown that the BM-SFO → PV-SFO phase transformation can be enabled by applying mechanical stress. This study therefore not only identifies a strong nanometric structure-property correlation in the mixed-phase SFO but also offers a new paradigm for the multifield control of topotactic phase transformation.

Local strain-driven migration of oxygen vacancies to apical sites in YBa2Cu3O7-x

It is well known that in the high-temperature superconductor YBa2Cu3O7-x (YBCO), oxygen vacancies (VO) control the carrier concentration, its critical current density and transition temperature. In this work, it is revealed that VO also allows the accommodation of local strain fields caused by large-scale defects within the crystal. We show that the nanoscale strain associated with Y2Ba4Cu8O16 (Y124) intergrowths-that are common defects in YBCO-strongly affect the venue and concentration of VO. Local probe measurements in conjunction with density-functional-theory calculations indicate a strain-driven reordering of VO from the commonly observed CuO chains towards the bridging apical sites located in the BaO plane and bind directly to the superconducting CuO2 planes. Our findings have strong implications on the physical properties of the YBCO, as the presence of apical VO alters the transfer of carriers to the CuO2 planes, confirmed by changes in the Cu and O core-loss edge probed using electron energy loss spectroscopy, and creates structural changes that affect the Cu-O bonds in the superconducting planes. In addition, the revelation of apical VO also has implications on modulating critical current densities and enhancing vortex pinning.

Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High-Density Resistive Switching Memory

Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating brownmillerite (BM) phase and conducting perovskite (PV) phase, has emerged as promising candidate materials for RS memories. Nevertheless, the microscopic mechanism of RS in these TMOs is still unclear. Furthermore, RS devices with simultaneously high density and superior memory performance are yet to be reported. Here, using SrFeO_x as a model system, it is directly observed that PV SrFeO₃ nanofilaments are formed and extend almost through the BM SrFeO_2.5 matrix in the ON state and are ruptured in the OFF state, unambiguously revealing a filamentary RS mechanism. The nanofilaments are ≈10 nm in diameter, enabling to downscale Au/SrFeO_x /SrRuO₃ RS devices to the 100 nm range for the first time. These nanodevices exhibit good performance including ON/OFF ratio as high as ≈10⁴ , retention time over 10⁵ s, and endurance up to 10⁷ cycles. This study significantly advances the understanding of the RS mechanism in TMOs exhibiting topotactic phase transformation, and it also demonstrates the potential of these materials for use in high-density RS memories.

Strain-Inhibited Electromigration of Oxygen Vacancies in LaCoO3

The oxygen vacancy profile in LaCoO₃ exhibits rich phases with distinct structures, symmetries, and magnetic properties. Exploration of the lattice degree of freedom of LaCoO₃ in the transition between these different structural phases may provide a route to enable new functionality in oxide materials with potential applications. To date, the oxygen vacancy profile transition in LaCoO₃ has mainly been induced by transition-metal doping or thermal treatment. Epitaxial strain was proposed to compete with the lattice degree of freedom but has not yet been rationalized. Here, the experimental findings of strain-inhibited structural transition from perovskite to brownmillerite during the electromigration of oxygen vacancies in epitaxial LaCoO₃ thin films are demonstrated. The results indicate that the oxygen vacancy ordering phase induced by the electric field is suppressed locally by both epitaxial strain field and external loads shown by in situ aberration-corrected (scanning)/ transmission electron microscopy. The demonstrated complex interplay between the electric and strain fields in the structural transitions of LaCoO₃ opens up prospects for manipulating new physical properties by external excitations and/or strain engineering of a substrate.

Phase change thin films for non-volatile memory applications

The rapid development of Internet of Things devices requires real time processing of a huge amount of digital data, creating a new demand for computing technology. Phase change memory technology based on chalcogenide phase change materials meets many requirements of the emerging memory applications since it is fast, scalable and non-volatile. In addition, phase change memory offers multilevel data storage and can be applied both in neuro-inspired and all-photonic in-memory computing. Furthermore, phase change alloys represent an outstanding class of functional materials having a tremendous variety of industrially relevant characteristics and exceptional material properties. Many efforts have been devoted to understanding these properties with the particular aim to design universal memory. This paper reviews materials science aspects of chalcogenide-based phase change thin films relevant for non-volatile memory applications. Particular emphasis is put on local structure, control of disorder and its impact on material properties, order-disorder transitions and interfacial transformations.

Two Kinds of Metastable Structures in an Epitaxial Lanthanum Cobalt Oxide Thin Film

Thin films have attracted much interest because they often have novel properties different from those of their bulk counterparts. In this work, we tune two metastable states in three kinds of lanthanum cobalt oxide thin films by electron beam irradiation and record their dynamic transition process in situ in a transmission electron microscope. The lanthanum cobalt oxide thin films exhibit a homogeneous microstructure in the initial state and then transfer to a stripelike superstructure with 3a₀ periodicity (a₀ is the perovskite lattice parameter), further developing into a superstructure with 2a₀ periodicity in dark stripes (brownmillerite structure). To explore the inherent energy discrepancy within the two metastable states, we perform first-principles calculations on a LaCoO_3-δ (0 ≤ δ ≤ 0.5) thin film system by geometry optimization. The calculation results suggest that the forming energy of the 3a₀ periodicity stripelike structure is a little lower than that of the 2a₀ periodicity in the LaCoO_3-δ thin film. Our work explains why the two stripelike structures coexist in lanthanum cobalt oxide thin films and extends prospective applications related to oxygen vacancies in thin films.

Toward Electrochemical Studies on the Nanometer and Atomic Scales: Progress, Challenges, and Opportunities

Electrochemical reactions and ionic transport underpin the operation of a broad range of devices and applications, from energy storage and conversion to information technologies, as well as biochemical processes, artificial muscles, and soft actuators. Understanding the mechanisms governing function of these applications requires probing local electrochemical phenomena on the relevant time and length scales. Here, we discuss the challenges and opportunities for extending electrochemical characterization probes to the nanometer and ultimately atomic scales, including challenges in down-scaling classical methods, the emergence of novel probes enabled by nanotechnology and based on emergent physics and chemistry of nanoscale systems, and the integration of local data into macroscopic models. Scanning probe microscopy (SPM) methods based on strain detection, potential detection, and hysteretic current measurements are discussed. We further compare SPM to electron beam probes and discuss the applicability of electron beam methods to probe local electrochemical behavior on the mesoscopic and atomic levels. Similar to a SPM tip, the electron beam can be used both for observing behavior and as an active electrode to induce reactions. We briefly discuss new challenges and opportunities for conducting fundamental scientific studies, matter patterning, and atomic manipulation arising in this context.

Giant Electroresistance in Ferroionic Tunnel Junctions

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×107 at room temperature and 2.1×109 at 10 K is achieved, using an ultrathin BaTiO3-δ layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge-Sb-Te thin films and GeTe-Sb2Te3 superlattices

Chalcogenide-based thin films are employed in data storage and memory technology whereas van der Waals-bonded layered chalcogenide heterostructures are considered to be a main contender for memory devices with low power consumption. The reduction of switching energy is due to the lowering of entropic losses governed by the restricted motion of atoms in one dimension within the crystalline states. The investigations of switching mechanisms in such superlattices have recently attracted much attention and the proposed models are still under debate. This is partially due to the lack of direct observation of atomic scale processes, which might occur in these chalcogenide systems. This work reports direct, nanoscale observations of the order-disorder processes in van der Waals bonded Ge-Sb-Te thin films and GeTe-Sb2Te3-based superlattices using in situ experiments inside an aberration-corrected transmission electron microscope. The findings reveal a reversible self-assembled reconfiguration of the structural order in these materials. This process is associated with the ordering of randomly distributed vacancies within the studied materials into ordered vacancy layers and with readjustment of the lattice plane distances within the newly formed layered structures, indicating the high flexibility of these layered chalcogenide-based systems. Thus, the ordering process results in the formation of vacancy-bonded building blocks intercalated within van der Waals-bonded units. Moreover, vacancy-bonded building blocks can be reconfigured to the initial structure under the influence of an electron beam, while in situ exposure of the recovered layers to a targeted electron beam leads to the reverse process. Overall, the outcomes provide new insights into local structure and switching mechanism in chalcogenide superlattices.

In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge-Sb-Te thin films and GeTe-Sb2Te3 superlattices

Chalcogenide-based thin films are employed in data storage and memory technology whereas van der Waals-bonded layered chalcogenide heterostructures are considered to be a main contender for memory devices with low power consumption. The reduction of switching energy is due to the lowering of entropic losses governed by the restricted motion of atoms in one dimension within the crystalline states. The investigations of switching mechanisms in such superlattices have recently attracted much attention and the proposed models are still under debate. This is partially due to the lack of direct observation of atomic scale processes, which might occur in these chalcogenide systems. This work reports direct, nanoscale observations of the order-disorder processes in van der Waals bonded Ge-Sb-Te thin films and GeTe-Sb2Te3-based superlattices using in situ experiments inside an aberration-corrected transmission electron microscope. The findings reveal a reversible self-assembled reconfiguration of the structural order in these materials. This process is associated with the ordering of randomly distributed vacancies within the studied materials into ordered vacancy layers and with readjustment of the lattice plane distances within the newly formed layered structures, indicating the high flexibility of these layered chalcogenide-based systems. Thus, the ordering process results in the formation of vacancy-bonded building blocks intercalated within van der Waals-bonded units. Moreover, vacancy-bonded building blocks can be reconfigured to the initial structure under the influence of an electron beam, while in situ exposure of the recovered layers to a targeted electron beam leads to the reverse process. Overall, the outcomes provide new insights into local structure and switching mechanism in chalcogenide superlattices.

Exploiting Symmetry Mismatch to Control Magnetism in a Ferroelastic Heterostructure

In the bulk, LaCoO_{3} (LCO) is a paramagnet, yet the low-temperature ferromagnetism (FM) is observed in tensile strained thin films, and its origin remains unresolved. Here, we quantitatively measured the distribution of atomic density and magnetization in LCO films by polarized neutron reflectometry (PNR) and found that the LCO layers near the heterointerfaces exhibit a reduced magnetization but an enhanced atomic density, whereas the film's interior (i.e., its film bulk) shows the opposite trend. We attribute the nonuniformity to the symmetry mismatch at the interface, which induces a structural distortion related to the ferroelasticity of LCO. This assertion is tested by systematic application of hydrostatic pressure during the PNR experiments. The magnetization can be controlled at a rate of -20.4% per GPa. These results provide unique insights into mechanisms driving FM in strained LCO films while offering a tantalizing observation that tunable deformation of the CoO_{6} octahedra in combination with the ferroelastic order parameter.

Reversible Control of Physical Properties via an Oxygen-Vacancy-Driven Topotactic Transition in Epitaxial La0.7 Sr0.3 MnO3- δ Thin Films

The vacancy distribution of oxygen and its dynamics directly affect the functional response of complex oxides and their potential applications. Dynamic control of the oxygen composition may provide the possibility to deterministically tune the physical properties and establish a comprehensive understanding of the structure-property relationship in such systems. Here, an oxygen-vacancy-induced topotactic transition from perovskite to brownmillerite and vice versa in epitaxial La_0.7 Sr_0.3 MnO_{3- δ} thin films is identified by real-time X-ray diffraction. A novel intermediate phase with a noncentered crystal structure is observed for the first time during the topotactic phase conversion which indicates a distinctive transition route. Polarized neutron reflectometry confirms an oxygen-deficient interfacial layer with drastically reduced nuclear scattering length density, further enabling a quantitative determination of the oxygen stoichiometry (La_0.7 Sr_0.3 MnO_2.65 ) for the intermediate state. Associated physical properties of distinct topotactic phases (i.e., ferromagnetic metal and antiferromagnetic insulator) can be reversibly switched by an oxygen desorption/absorption cycling process. Importantly, a significant lowering of necessary conditions (temperatures below 100 °C and conversion time less than 30 min) for the oxygen reloading process is found. These results demonstrate the potential applications of defect engineering in the design of perovskite-based functional materials.

Atomic Structure and Electrical Activity of Grain Boundaries and Ruddlesden-Popper Faults in Cesium Lead Bromide Perovskite

To evaluate the role of planar defects in lead-halide perovskites-cheap, versatile semiconducting materials-it is critical to examine their structure, including defects, at the atomic scale and develop a detailed understanding of their impact on electronic properties. In this study, postsynthesis nanocrystal fusion, aberration-corrected scanning transmission electron microscopy, and first-principles calculations are combined to study the nature of different planar defects formed in CsPbBr₃ nanocrystals. Two types of prevalent planar defects from atomic resolution imaging are observed: previously unreported Br-rich [001](210)∑5 grain boundaries (GBs) and Ruddlesden-Popper (RP) planar faults. The first-principles calculations reveal that neither of these planar faults induce deep defect levels, but their Br-deficient counterparts do. It is found that the ∑5 GB repels electrons and attracts holes, similar to an n-p-n junction, and the RP planar defects repel both electrons and holes, similar to a semiconductor-insulator-semiconductor junction. Finally, the potential applications of these findings and their implications to understand the planar defects in organic-inorganic lead-halide perovskites that have led to solar cells with extremely high photoconversion efficiencies are discussed.

The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale

Defects in crystalline materials have a tremendous impact on their functional behavior. Controlling and tuning of these imperfections can lead to marked improvements in their physical, electrical, magnetic, and optical properties. Thanks to the development of aberration-corrected (scanning) transmission electron microscopy (STEM/TEM), direct visualization of defects at multiple length scales has now become possible, including those critically important defects at the atomic scale. Thorough understanding of the nature and dynamics of these defects is the key to unraveling the fundamental origins of structure-property relationships. Such insight can therefore allow the creation of new materials with desired properties through appropriate defect engineering. Herein, several examples of new insights obtained from representative functional materials are shown, including piezoelectrics/ferroelectrics, oxide interfaces, thermoelectrics, electrocatalysts, and 2D materials.

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

Material structure, properties, and dynamics through scanning transmission electron microscopy

Scanning transmission electron microscopy (STEM) has advanced rapidly in the last decade thanks to the ability to correct the major aberrations of the probe-forming lens. Now, atomic-sized beams are routine, even at accelerating voltages as low as 40 kV, allowing knock-on damage to be minimized in beam sensitive materials. The aberration-corrected probes can contain sufficient current for high-quality, simultaneous, imaging and analysis in multiple modes. Atomic positions can be mapped with picometer precision, revealing ferroelectric domain structures, composition can be mapped by energy-dispersive X-ray spectroscopy (EDX) and electron energy loss spectroscopy (EELS), and charge transfer can be tracked unit cell by unit cell using the EELS fine structure. Furthermore, dynamics of point defects can be investigated through rapid acquisition of multiple image scans. Today STEM has become an indispensable tool for analytical science at the atomic level, providing a whole new level of insights into the complex interplays that control material properties.

Atomic Resolution Imaging of Nanoscale Chemical Expansion in PrxCe1-xO2-δ during In Situ Heating

Thin film nonstoichiometric oxides enable many high-temperature applications including solid oxide fuel cells, actuators, and catalysis. Large concentrations of point defects (particularly, oxygen vacancies) enable fast ionic conductivity or gas exchange kinetics in these materials but also manifest as coupling between lattice volume and chemical composition. This chemical expansion may be either detrimental or useful, especially in thin film devices that may exhibit enhanced performance through strain engineering or decreased operating temperatures. However, thin film nonstoichiometric oxides can differ from bulk counterparts in terms of operando defect concentrations, transport properties, and mechanical properties. Here, we present an in situ investigation of atomic-scale chemical expansion in Pr_xCe_1-xO_2-δ (PCO), a mixed ionic-electronic conducting oxide relevant to electrochemical energy conversion and high-temperature actuation. Through a combination of electron energy loss spectroscopy and transmission electron microscopy with in situ heating, we characterized chemical strains and changes in oxidation state in cross sections of PCO films grown on yttria-stabilized zirconia (YSZ) at temperatures reaching 650 °C. We quantified, both statically and dynamically, the nanoscale chemical expansion induced by changes in PCO redox state as a function of position and direction relative to the film-substrate interface. Additionally, we observed dislocations at the film-substrate interface, as well as reduced cation localization to threading defects within PCO films. These results illustrate several key aspects of atomic-scale structure and mechanical deformation in nonstoichiometric oxide films that clarify distinctions between films and bulk counterparts and that hold several implications for operando chemical expansion or "breathing" of such oxide films.

Quantification of flexoelectricity in PbTiO3/SrTiO3 superlattice polar vortices using machine learning and phase-field modeling

Flexoelectricity refers to electric polarization generated by heterogeneous mechanical strains, namely strain gradients, in materials of arbitrary crystal symmetries. Despite more than 50 years of work on this effect, an accurate identification of its coupling strength remains an experimental challenge for most materials, which impedes its wide recognition. Here, we show the presence of flexoelectricity in the recently discovered polar vortices in PbTiO₃/SrTiO₃ superlattices based on a combination of machine-learning analysis of the atomic-scale electron microscopy imaging data and phenomenological phase-field modeling. By scrutinizing the influence of flexocoupling on the global vortex structure, we match theory and experiment using computer vision methodologies to determine the flexoelectric coefficients for PbTiO₃ and SrTiO₃. Our findings highlight the inherent, nontrivial role of flexoelectricity in the generation of emergent complex polarization morphologies and demonstrate a viable approach to delineating this effect, conducive to the deeper exploration of both topics.

Flexoelectric coupling between strain gradients and polarization influences the physics of ferroelectric devices but it is difficult to directly probe its effects. Here, Li et al. use principal component analysis to compare STEM images with phase-field modeling and extract the flexoelectric contributions.