Signatures of Topological Superconductivity in Bulk-Insulating Topological Insulator BiSbTe1.25Se1.75 in Proximity with Superconducting NbSe2

Emergent p-Wave Superconductivity in a Dual Topological Insulator BiSe via Superconducting Proximity Effect

The quest for anisotropic superconductors has been a long-standing pursuit due to their potential applications in quantum computing. In this regard, experimentally, d-wave and anisotropic s-wave superconducting order parameters are predominantly observed, while p-wave superconductors remain largely elusive. Achieving p-wave superconductivity in topological phases is highly desirable, as it is considered suitable for creating topologically protected qubits. To achieve topological superconductivity in the dual topological insulator BiSe, we place an s-wave superconductor NbSe2 in its close proximity employing the van der Waals epitaxy technique. Low-temperature differential conductance measurements performed at the heterojunction exhibit a dual-dip feature with a V-shaped inner dip, a characteristic of p-wave superconductivity. This observation is corroborated by the multiband 2D Blonder-Tinkham-Klapwijk (BTK) fitting, where the inner and outer gaps exhibit p-wave and s-wave character, respectively. Furthermore, the BTK analysis reveals that the two superconducting gaps experience distinct effective critical fields and transition temperatures.

Helical Topological Superconducting Pairing at Finite Excitation Energies

We propose helical topological superconductivity away from the Fermi surface in three-dimensional time-reversal-symmetric odd-parity multiband superconductors. In these systems, pairing between electrons originating from different bands is responsible for the corresponding topological phase transition. Consequently, a pair of helical topological Dirac surface states emerges at finite excitation energies. These helical Dirac surface states are tunable in energy by chemical potential and strength of band splitting. They are protected by time-reversal symmetry combined with crystalline twofold rotation symmetry. We suggest concrete materials in which this phenomenon could be observed.

The Coexistence of Superconductivity and Topological Order in Van der Waals InNbS2

The research on systems with coexistence of superconductivity and nontrivial band topology has attracted widespread attention. However, the limited availability of material platforms severely hinders the research progress. Here, it reports the first experimental synthesis and measurement of high-quality single crystal van der Waals transition-metal dichalcogenide InNbS2 , revealing it as a topological nodal line semimetal with coexisting superconductivity. The temperature-dependent measurements of magnetization susceptibility and electrical transport show that InNbS2 is a type-II superconductor with a transition temperature Tc of 6 K. First-principles calculations predict multiple topological nodal ring states close to the Fermi level in the presence of spin-orbit coupling. Similar features are also observed in the as-synthesized BiNbS2 and PbNbS2 samples. This work provides new material platforms ANbS2 (A = In, Bi, and Pb) and uncovers their intriguing potential for exploring the interplay between superconductivity and band topology.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies

As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.

Investigations of proximity-induced superconductivity in the topological insulator Bi2Te3 by microRaman spectroscopy

We used the topological insulator (TI) Bi2Te3 and a high-temperature superconductor (HTSC) hybrid device for investigations of proximity-induced superconductivity (PS) in the TI. Application of the superconductor YBa2Cu3O7-δ (YBCO) enabled us to access higher temperature and energy scales for this phenomenon. The HTSC in the hybrid device exhibits emergence of a pseudogap state for T > Tc that converts into a superconducting state with a reduced gap for T < Tc. The conversion process has been reflected in Raman spectra collected from the TI. Complementary charge transport experiments revealed emergence of the proximity-induced superconducting gap in the TI and the reduced superconducting gap in the HTSC, but no signature of the pseudogap. This allowed us to conclude that Raman spectroscopy reveals formation of the pseudogap state but cannot distinguish the proximity-induced superconducting state in the TI from the superconducting state in the HTSC characterised by the reduced gap. Results of our experiments have shown that Raman spectroscopy is a complementary technique to classic charge transport experiments and is a powerful tool for investigation of the proximity-induced superconductivity in the Bi2Te3.