Surface-State Assisted Carrier Recombination and Optical Nonlinearities in Bulk to 2D Nonlayered PtS

Nonlinear Optical Properties of 2D Materials and their Applications

2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light-matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second-order and third-order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second-order susceptibility χ(2) and third-order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second-harmonic generation (SHG) and third-harmonic generation (THG) for 2D materials are presented.

Photothermionic Effect-Assisted Ultrafast Charge Transfer in NbS2/MoS2 Heterostructure

Two-dimensional (2D) van der Waals heterostructures (vdW HSs) composed of transition metal dichalcogenides (TMDCs) have emerged as frontrunners in the optoelectronics field, owing to their exceptional optical and electrical properties. Recent research on the intrinsic interlayer charge transfer mechanism has been primarily focused on the Type II HSs, while metal-semiconductor (MS) vertical HSs, promising for advancing photodetector technology, have received comparatively less attention. Here, we reveal the first experimental observation of photothermionic effect-assisted ultrafast interlayer charge transfer in the NbS2/MoS2 heterostructure using femtosecond transient absorption technology and first-principles calculations, effectively ignoring the Schottky barrier height. We demonstrate that within 500 fs, charge transfer occurs from NbS2 to MoS2 in the heterostructure, resulting in supplementary carrier generation in the visible spectrum when excited with infrared light below the MoS2 bandgap, at wavelengths of 1030 and 1500 nm. Such promising characteristics of 2D NbS2-semiconductor heterostructures offer a potential platform for synergistically combining low contact resistance with broadband photocarrier generation, marking a significant advancement in optoelectronics and light harvesting.

Nonlinear optical properties and ultrafast carrier dynamics of ultrathin ReSe2

Rhenium diselenide (ReSe2) has shown great application potential in the field of optical devices because of its excellent optoelectronic properties. In this study, we systematically investigated the nonlinear optical absorption properties of mono- and bi-layer ReSe2 and the ultrafast carrier dynamics process in the ultraviolet to near-infrared spectral range as the essential foundational groundwork for harnessing the potential of ultrathin ReSe2-based optoelectronic devices. We found that ReSe2 has excellent nonlinear absorption performance and a low saturation absorption intensity that is better than that of many semiconductor materials. Meanwhile, pump-probe and transient absorption technology revealed the underlying dynamic mechanisms, including bandgap renormalization and Auger recombination. This study can broaden the horizons of material science and propel the development of different applications of ReSe2.

PtS quantum dots/Nb2O5 nanosheets with accelerated charge transfer for boosting photocatalytic H2 production

The rapid recombination rate of charges limits the improvement of photocatalytic hydrogen evolution performance related to semiconductor photocatalysts. An effective strategy to accelerate charge separation and transfer is the design and construction of new high-efficiency cocatalysts on photocatalysts. Herein, a system of PtS quantum dots/Nb₂O₅ nanosheets (PtS/Nb₂O₅) was constructed via the in situ vapor phase (ISVP) synthesis process. The conclusions from ultrafast femtosecond-resolved TA spectroscopy indicated that the lifetime of the photogenerated charges of PtS/Nb₂O₅ (6073.75 ps) was shortened markedly in contrast to that of Nb₂O₅ (6634.05 ps), manifesting the facilitated separation and transfer of photogenerated charges caused by the quantum-dot-structured PtS cocatalyst. The enhanced charge separation and transfer capacity contributes to an excellent H₂ production rate of 182.5 μmol h^-1 for PtS/Nb₂O₅, which is up to 3.4 and 12.2 times that of Pt/Nb₂O₅ and Nb₂O₅, respectively. This work brings up new avenues for constructing unique and effective photocatalysts via the cocatalyst design.

Preparation of 2D Molybdenum Phosphide via Surface-Confined Atomic Substitution

The emerging nonlayered 2D materials (NL2DMs) are sparking immense interest due to their fascinating physicochemical properties and enhanced performance in many applications. NL2DMs are particularly favored in catalytic applications owing to the extremely large surface area and low-coordinated surface atoms. However, the synthesis of NL2DMs is complex because their crystals are held together by strong isotropic covalent bonds. Here, nonlayered molybdenum phosphide (MoP) with well-defined 2D morphology is synthesized from layered molybdenum dichalcogenides via surface-confined atomic substitution. During the synthesis, the molybdenum dichalcogenide nanosheet functions as the host matrix where each layer of Mo maintains their hexagonal arrangement and forms isotropic covalent bonds with P that substitutes S, resulting in the conversion from layered van der Waals material to a covalently bonded NL2DM. The MoP nanosheets converted from few-layer MoS₂ are single crystalline, while those converted from monolayers are amorphous. The converted MoP demonstrates metallic charge transport and desirable performance in the electrocatalytic hydrogen evolution reaction (HER). More importantly, in contrast to MoS₂ , which shows edge-dominated HER performance, the edge and basal plane of MoP deliver similar HER performance, which is correlated with theoretical calculations. This work provides a new synthetic strategy for high-quality nonlayered materials with well-defined 2D morphology for future exploration.

Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity

Artificial synapses are promising for dealing with large amounts of data computing. Great progress has been made recently in terms of improving the on/off current ratio, the number of states, and the energy efficiency of synapse devices. However, the nonlinear weight update behavior of a synapse caused by the uncertain direction of the conductive filament leads to complex weight modulation, which degrades the delivery accuracy of information. Here we propose a strategy to improve the weight update behavior of synapses using chemical-vapor-deposition-grown transition metal dichalcogenides (TMDCs) with a vertical composition gradient, where the sulfur concentration decreases gradually along the thickness direction of TMDCs and thus forms a certain direction of the conduction filament for synapse devices. It is worth noting that the devices show an excellent linear conductance of potentiation and depression with a high linearity of 0.994 (surpassing most state-of-the-art synapses), have a large number of states, and are able to fabricate synapse arrays with wafer-scale. Furthermore, the devices based on the TMDCs with the vertical composition gradient exhibit an asymmetric feature of potentiation and depression behaviors with high linearity and follow the simulated linear Leaky ReLU function, resulting in a high recognition accuracy of 94.73%, which overcomes the unreliability issue in the Sigmoid function due to the vanishing gradient phenomenon. This study not only provides a universal method to grow TMDCs with a vertical composition gradient but also contributes to exploring highly linear synapses toward neuromorphic computing.

Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe

Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN  ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.

High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber

Atomically thin Bi2O2Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi2O2Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi2O2Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar+ plasma treatments are employed to precisely regulate the O and Se defect states in Bi2O2Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm−2 after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration.

Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices

Various near-atom-thickness two-dimensional (2D) van der Waals (vdW) crystals with unparalleled electromechanical properties have been explored for transformative devices. Currently, the availability of 2D vdW crystals is rather limited in nature as they are only obtained from certain mother crystals with intrinsically possessed layered crystallinity and anisotropic molecular bonding. Recent efforts to transform conventionally non-vdW three-dimensional (3D) crystals into ultrathin 2D-like structures have seen rapid developments to explore device building blocks of unique form factors. Herein, we explore a "peel-and-stick" approach, where a nonlayered 3D platinum sulfide (PtS) crystal, traditionally known as a cooperate mineral material, is transformed into a freestanding 2D-like membrane for electromechanical applications. The ultrathin (∼10 nm) 3D PtS films grown on large-area (>cm²) silicon dioxide/silicon (SiO₂/Si) wafers are precisely "peeled" inside water retaining desired geometries via a capillary-force-driven surface wettability control. Subsequently, they are "sticked" on strain-engineered patterned substrates presenting prominent semiconducting properties, i.e., p-type transport with an optical band gap of ∼1.24 eV. A variety of mechanically deformable strain-invariant electronic devices have been demonstrated by this peel-and-stick method, including biaxially stretchable photodetectors and respiratory sensing face masks. This study offers new opportunities of 2D-like nonlayered semiconducting crystals for emerging mechanically reconfigurable and stretchable device technologies.

Layer-Tunable Nonlinear Optical Characteristics and Photocarrier Dynamics of 2D PdSe2 in Broadband Spectra

Layered 2D transition metal dichalcogenides (TMDCs) exhibited fascinating nonlinear optical (NLO) properties for constructing varied promising optoelectronics. However, exploring the desired 2D materials with both superior nonlinear absorption and ultrafast response in broadband spectra remain the key challenges to harvest their greatest potential. Here, based on synthesizing 2D PdSe₂ films with the controlled layer number, the authors systematically demonstrated the broadband giant NLO performance and ultrafast excited carrier dynamics of this emerging material under femtosecond visible-to-near-infrared laser-pulse excitation (400-1550 nm). Layer-dependent and wavelength-dependent evolution of optical bandgap, nonlinear absorption, and photocarrier dynamics in the obtained 2D PdSe₂ are clearly revealed. Specially, the transition from semiconducting to semimetallic PdSe₂ induced dramatic changes of their interband absorption-relaxation process. This work makes 2D PdSe₂ more competitive for future ultrafast photonics and also opens up a new avenue for the optical performance optimization of various 2D materials by rational design of these materials.

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS₂ has been investigated for potential electronic applications, due to its high charge-carrier mobility and strongly layer-dependent bandgap, it has proven to be one of the more difficult TMDs to synthesise. In contrast to most TMDs, Pt has a significantly more stable monosulfide, the non-layered PtS. The existence of two stable platinum sulfides, sometimes within the same sample, has resulted in much confusion between the materials in the literature. Neither of these Pt sulfides have been thoroughly characterised as-of-yet. Here we utilise time-efficient, scalable methods to synthesise high-quality thin films of both Pt sulfides on a variety of substrates. The competing nature of the sulfides and limited thermal stability of these materials is demonstrated. We report peak-fitted X-ray photoelectron spectra, and Raman spectra using a variety of laser wavelengths, for both materials. This systematic characterisation provides a guide to differentiate between the sulfides using relatively simple methods which is essential to enable future work on these interesting materials.

2D PtS nanorectangles/g-C3N4 nanosheets with a metal sulfide-support interaction effect for high-efficiency photocatalytic H2 evolution

Cocatalyst design is a key approach to acquire high solar-energy conversion efficiency for photocatalytic hydrogen evolution. Here a new in situ vapor-phase (ISVP) growth method is developed to construct the cocatalyst of 2D PtS nanorectangles (a length of ∼7 nm, a width of ∼5 nm) on the surface of g-C₃N₄ nanosheets. The 2D PtS nanorectangles/g-C₃N₄ nanosheets (PtS/CN) show an unusual metal sulfide-support interaction (MSSI), which is evidenced by atomic resolution HAADF-STEM, synchrotron-based GIXRD, XPS and DFT calculations. The effect of MSSI contributes to the optimization of geometrical structure and energy-band structure, acceleration of charge transfer, and reduction of hydrogen adsorption free energy of PtS/CN, thus yielding excellent stability and an ultrahigh photocatalytic H₂ evolution rate of 1072.6 μmol h^-1 (an apparent quantum efficiency of 45.7% at 420 nm), up to 13.3 and 1532.3 times by contrast with that of Pt nanoparticles/g-C₃N₄ nanosheets and g-C₃N₄ nanosheets, respectively. This work will provide a new platform for designing high-efficiency photocatalysts for sunlight-driven hydrogen generation.

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

We employ a combination of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to investigate the properties of layered PtS₂, synthesised via thermally assisted conversion (TAC) of a metallic Pt thin film. STM measurements reveal the 1T crystal structure of PtS₂, and the lattice constant is determined to be 3.58 ± 0.03 Å. STS allowed the electronic structure of individual PtS₂ crystallites to be directly probed and a bandgap of ∼1.03 eV was determined for a 3.8 nm thick flake at liquid nitrogen temperature. These findings substantially expand understanding of the atomic and electronic structure of PtS₂ and indicate that STM is a powerful tool capable of locally probing non-uniform polycrystalline films, such as those produced by TAC. Prior to STM/STS measurements the quality of synthesised TAC PtS₂ was analysed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These results are of relevance to applications-focussed studies centred on PtS₂ and may inform future efforts to optimise the synthesis conditions for thin film PtS₂.

Semiconducting thin-film polycrystalline PtS₂ is characterised by atomically resolved scanning tunnelling microscopy and spectroscopy.