Transparent Flexible Nanoline Field-Effect Transistor Array with High Integration in a Large Area

In-depth theoretical analysis of the influence of an external electric field on charge transport parameters

It is important to develop materials with environmental stability and long device shelf life for use in organic field-effect transistors (OFETs). The microscopic, molecular-level nature of the organic layer in OFETs is not yet well understood. The stability of geometric and electronic structures and the regulation of the external electric field (EEF) on the charge transport properties of four typical homogeneous organic semiconductors (OSCs) were investigated by density functional theory (DFT). The results showed that under the EEF, the structural changes in single-bond linked oligomers were more sensitive and complex than those of condensed molecules, and there were non-monotonic changes in their reorganization energy (λ) during charge transport under an EEF consisting of decreases and then increases (Series D). The change in λ under an EEF can be preliminarily and qualitatively determined by the change in the frontier molecular orbitals (FMOs) - the number of C-atoms with nonbonding characteristics. For single-bonded molecules, the transfer integral is basically unchanged under a low EEF, but it will greatly change at a high EEF. Because the structure and properties of the molecule will greatly change under different EEFs, the effect of an EEF should be fully considered when determining the intrinsic mobility of OSCs, which could cause a deviation 0.3-20 times in mobility. According to detailed calculations, one heterogeneous oligomer, TH-BTz, was designed. Its λ can be greatly reduced under an EEF, and the change in the energy level of FMOs can be adjusted to different degrees. This study provides a reasonable idea for verification of the experimental mobility value and also provides guidance for the directional design of stable high-mobility OSCs.

Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs

In this study, we have investigated the electron mobility of monolayered (ML) tetrahex-GeC2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2 (V s)-1, exceeding the 400 cm2 (V s)-1 of MoS2 which was calculated using the same method and measured experimentally. The ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs, including gate lengths (Lg) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (Ion) can meet the requirements of similar nodes in the ITRS 2013. In particular, the Ion is more remarkable for HP applications than that of the extensively studied MoS2. For LP applications, the Ion values at Lg of 7 and 9 nm surpass those of arsenene, known for having the largest Ion among 2D semiconductors. Subthreshold swings (SSs) as low as 69/53 mV dec-1 at an Lg of 9 nm were observed for HP/LP applications, and 73 mV dec-1 at an Lg of 5 nm for LP applications, indicating the excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg values of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.

Materials-Driven Soft Wearable Bioelectronics for Connected Healthcare

In the era of Internet-of-things, many things can stay connected; however, biological systems, including those necessary for human health, remain unable to stay connected to the global Internet due to the lack of soft conformal biosensors. The fundamental challenge lies in the fact that electronics and biology are distinct and incompatible, as they are based on different materials via different functioning principles. In particular, the human body is soft and curvilinear, yet electronics are typically rigid and planar. Recent advances in materials and materials design have generated tremendous opportunities to design soft wearable bioelectronics, which may bridge the gap, enabling the ultimate dream of connected healthcare for anyone, anytime, and anywhere. We begin with a review of the historical development of healthcare, indicating the significant trend of connected healthcare. This is followed by the focal point of discussion about new materials and materials design, particularly low-dimensional nanomaterials. We summarize material types and their attributes for designing soft bioelectronic sensors; we also cover their synthesis and fabrication methods, including top-down, bottom-up, and their combined approaches. Next, we discuss the wearable energy challenges and progress made to date. In addition to front-end wearable devices, we also describe back-end machine learning algorithms, artificial intelligence, telecommunication, and software. Afterward, we describe the integration of soft wearable bioelectronic systems which have been applied in various testbeds in real-world settings, including laboratories that are preclinical and clinical environments. Finally, we narrate the remaining challenges and opportunities in conjunction with our perspectives.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Advances in Flexible Metallic Transparent Electrodes

Transparent electrodes (TEs) are pivotal components in many modern devices such as solar cells, light-emitting diodes, touch screens, wearable electronic devices, smart windows, and transparent heaters. Recently, the high demand for flexibility and low cost in TEs requires a new class of transparent conductive materials (TCMs), serving as substitutes for the conventional indium tin oxide (ITO). So far, ITO has been the most used TCM despite its brittleness and high cost. Among the different emerging alternative materials to ITO, metallic nanomaterials have received much interest due to their remarkable optical-electrical properties, low cost, ease of manufacturing, flexibility, and widespread applicability. These involve metal grids, thin oxide/metal/oxide multilayers, metal nanowire percolating networks, or nanocomposites based on metallic nanostructures. In this review, a comparison between TCMs based on metallic nanomaterials and other TCM technologies is discussed. Next, the different types of metal-based TCMs developed so far and the fabrication technologies used are presented. Then, the challenges that these TCMs face toward integration in functional devices are discussed. Finally, the various fields in which metal-based TCMs have been successfully applied, as well as emerging and potential applications, are summarized.

Precise Tuning of Multiple Perovskite Photoluminescence by Volume-Controlled Printing of Perovskite Precursor Solution on Cellulose Paper

Metal halide perovskite nanocrystals (PeNCs) with a controlled quantum size effect have received intense interest for potential applications in optoelectronics and photonics. Here, we present a simple and innovative strategy to precisely tune the photoluminescence color of PeNCs by simply printing perovskite precursor solutions on cellulose papers. Depending on the volume of the printed precursor solutions, the PeNCs are autonomously grown into three discrete sizes, and their relative size population is controlled; accordingly, not only the number of multiple PL peaks but also their relative intensities can be precisely tuned. This autonomous size control is obtained through the efflorescence, which is advection of salt ions toward the surface of a porous medium during solvent evaporation and also through the confined crystal growth in the hierarchical structure of cellulose fibers. The infiltrated PeNCs are environmentally stable against moisture (for 3 months in air at 70% relative humidity) and strong light exposure by hydrophobic surface treatment. This study also demonstrates invisible encryption and highly secured unclonable anticounterfeiting patterns on deformable cellulose substrates and banknotes.

Elastomeric Nanodielectrics for Soft and Hysteresis-Free Electronics

Elastomeric dielectrics are crucial for reliably governing the carrier densities in semiconducting channels during deformation in soft/stretchable field-effect transistors (FETs). Uncontrolled stacking of polymeric chains renders elastomeric dielectrics poorly insulated at nanoscale thicknesses, thereby thick films are usually required, leading to high voltage or power consumption for on/off operations of FETs. Here, layer-by-layer assembly is exploited to build 15-nm-thick elastomeric nanodielectrics through alternative adsorption of oppositely charged polyurethanes (PUs) for soft and hysteresis-free FETs. After mild thermal annealing to heal pinholes, such PU multilayers offer high areal capacitances of 237 nF cm^-2 and low leakage current densities of 3.2 × 10^-8 A cm^-2 at 2 V. Owing to the intrinsic ductility of the elastomeric PUs, the nanofilms possess excellent dielectric properties at a strain of 5% or a bending radius of 1.5 mm, while the wrinkled counterparts show mechanical stability with negligible changes of leakage currents after repeated stretching to a strain of 50%. Besides, these nanodielectrics are immune to high humidity and conserve their properties when immersed into water, despite their assembly occurs aqueously. Furthermore, the PU dielectrics are implemented in carbon nanotube FETs, demonstrating low-voltage operations (< 1.5 V) and negligible hysteresis without any encapsulations.

Graphene's Role in Emerging Trends of Capacitive Energy Storage

Technological breakthroughs in energy storage are being driven by the development of next-generation supercapacitors with favorable features besides high-power density and cycling stability. In this innovation, graphene and its derived materials play an active role. Here, the research status of graphene supercapacitors is analyzed. Recent progress is outlined in graphene assembly, exfoliation, and processing techniques. In addition, electrochemical and electrical attributes that are increasingly valued in next-generation supercapacitors are highlighted along with a summary of the latest research addressing chemical modification of graphene and its derivatives for future supercapacitors. The challenges and solutions discussed in the review hopefully will shed light on the commercialization of graphene and a broader genre of 2D materials in energy storage applications.

Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits

Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm² V^-1 s^-1. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.

High-Performance Transparent and Conductive Films with Fully Enclosed Metal Mesh

Metal mesh films as a kind of transparent conductive electrodes (TCEs) have shown high promise in various optoelectronic devices but are still challenged by a combination of high conductivity and transparency, mechanical robustness, and uniform electric field. Herein, we demonstrate a new concept of transparent and conductive films with a fully enclosed metal mesh, which is embedded in deep microcavities and is coated with a conductive polymer layer to combine these metrics. To ensure high conductivity and transparency, metal ink is filled into the fine (down to submicrometers) and deep mesh microcavities by electrowetting-assisted blading with low square resistances of 0.4 and 2.69 Ω sq^-1 at typical transmittances of 76.9 and 87.4%, respectively. The covered thin conductive polymer layer improves the electric field uniformity of metal mesh films by at least three orders of magnitude. The fully enclosed metal mesh films exhibit excellent mechanical flexibility, indicated by the fact that the resistance is almost unchanged after 10,000 bending cycles at a bending radius of ∼5 mm. Based on the fully enclosed metal mesh films, the emission intensity of alternating current electroluminescent devices is improved by more than three times compared with that in the case of solely using common metal mesh films.

An Intrinsically Micro-/Nanostructured Pollen Substrate with Tunable Optical Properties for Optoelectronic Applications

There is broad interest in developing photonically active substrates from naturally abundant, minimally processed materials that can help to overcome the environmental challenges of synthetic plastic substrates while also gaining inspiration from biological design principles. To date, most efforts have focused on rationally engineering the micro- and nanoscale structural properties of cellulose-based materials by tuning fibril and fiber dimensions and packing along with chemical modifications, while there is largely untapped potential to design photonically active substrates from other classes of natural materials with distinct morphological features. Herein, the fabrication of a flexible pollen-derived substrate is reported, which exhibits high transparency (>92%) and high haze (>84%) on account of the micro- and nanostructure properties of constituent pollen particles that are readily obtained from nature and require minimal extraction or processing to form the paper-like substrate based on colloidal self-assembly. Experiments and simulations confirm that the optical properties of the pollen substrate are tunable and arise from light-matter interactions with the spiky surface of pollen particles. In a proof-of-concept example, the pollen substrate is incorporated into a functional perovskite solar cell while the tunable optical properties of the intrinsically micro-/nanostructured pollen substrate can be useful for a wide range of optoelectronic applications.

Printed Stretchable Single-Nanofiber Interconnections for Individually-Addressable Highly-Integrated Transparent Stretchable Field Effect Transistor Array

Stretchable electronics have been spotlighted as promising next-generation electronics. In order to drive a specific unit device in an integrated stretchable device, the interconnection of the device should be placed in a desired position and addressed individually. In addition, practical stretchable interconnection requires reliable stretchability, high conductivity, optical transparency, high resolution, and fast and large-scale production. This study proposes an approach to meet these requirements. We print the single wavy polymer nanofibers (NFs) in a desired position and convert them into metal NF interconnections. The nanoscale diameter and the wavy cylindrical shape of the metal NFs are the main reasons for the reliable stretchability and the excellent transparency. Using the stretchable metal NFs and the stretchable organic semiconductor NFs, an array of all-stretchable transparent NF-field effect transistors (NF-FETs) is demonstrated. The highly integrated NF-FET array (10 FETs/mm²) shows uniform performance and good stability under repeated severe mechanical deformations.

Interface Design for Stretchable Electronic Devices

Stretchable electronics has emerged over the past decade and is now expected to bring form factor-free innovation in the next-generation electronic devices. Stretchable devices have evolved with the synthesis of new soft materials and new device architectures that require significant deformability while maintaining the high device performance of the conventional rigid devices. As the mismatch in the mechanical stiffness between materials, layers, and device units is the major challenge for stretchable electronics, interface control in varying scales determines the device characteristics and the level of stretchability. This article reviews the recent advances in interface control for stretchable electronic devices. It summarizes the design principles and covers the representative approaches for solving the technological issues related to interfaces at different scales: i) nano- and microscale interfaces between materials, ii) mesoscale interfaces between layers or microstructures, and iii) macroscale interfaces between unit devices, substrates, or electrical connections. The last section discusses the current issues and future challenges of the interfaces for stretchable devices.

Oxygen-Induced Reversible Sn-Dopant Deactivation between Indium Tin Oxide and Single-Crystalline Oxide Nanowire Leading to Interfacial Switching

An impurity doping in semiconductors is an important irreversible process of manipulating the electrical properties of advanced electron devices. Here, we report an unusual reversible dopant activation/deactivation phenomenon, which emerges at an interface between indium tin oxide (ITO) and single-crystalline oxide channel. We found that the interface electrical resistance between ITO electrodes and single-crystalline oxide nanowire channel can be repeatedly switched between a metallic state and a near-insulative state by applying thermal treatments in air or vacuum. Interestingly, this electrical switching phenomenon disappears when the oxide nanowire changes from the single-crystalline structure to the lithography-defined polycrystalline structure. Atmosphere-controlled annealing experiments reveal that atmospheric oxygen induces repeatable change in the interfacial electrical resistance. Systematic investigations on metal cation species and channel crystallinity demonstrate that the observed electrical switching is related to an interface-specific reversible Sn-dopant activation/deactivation of ITO electrode in contact with a single-crystalline oxide channel.

Highly Deformable Transparent Au Film Electrodes and Their Uses in Deformable Displays

With emerging interest in foldable and stretchable displays, the need to develop transparent deformable electrode and interconnection is increasing. Even though metal films have been standard electrodes in conventional electronic devices due to their high conductivity and well-established process, they have never been used for transparent deformable electrodes. We present highly conductive transparent deformable Au film electrodes and use them to fabricate a foldable perovskite light-emitting diode (PeLED) and a biaxially stretchable alternating current electroluminescence (ACEL) display. We exhibit the formation of an ultrathin (6 nm) continuous Au film on an anisotropic conductive ultrathin film (ACUF) of amorphous carbon. The ultrathin Au film was first formed on an ACUF-coated Si wafer (4 in. scale) through metal evaporation and transferred to the polymer substrates by a simple and effective water-assisted delamination process. Then, a hybrid electrode (ACUF/ACUF/Au) was produced as the transparent deformable electrode. Complicated interconnections could be created by metal deposition through a mask. The electrical conductance of the hybrid electrode was not affected by the crack formation in the Au film during electrode folding, crumpling, and stretching. We reveal the reason why the hybrid electrode can maintain such excellent electrical stability under deformation.

Transparent and flexible high-power supercapacitors based on carbon nanotube fibre aerogels

In this work, we report the fabrication of continuous transparent and flexible supercapacitors by depositing a CNT network onto a polymer electrolyte membrane directly from an aerogel of ultra-long CNTs produced floating in the gas phase. The supercapacitors show a combination of a power density of 1370 kW kg-1 at high transmittance (ca. 70%), and high electrochemical stability during extended cycling (>94% capacitance retention over 20 000 cycles) and against repeated 180° flexural deformation. They represent a significant enhancement of 1-3 orders of magnitude compared to prior state-of-the-art transparent supercapacitors based on graphene, CNTs, and rGO. These features mainly arise from the exceptionally long length of CNTs, which makes the material behave as a bulk conductor instead of an aspect ratio-limited percolating network, even for electrodes with >90% transparency. The electrical and capacitive figures-of-merit for the transparent conductor are FoMe = 2.7, and FoMc = 0.46 F S-1 cm-2 respectively.

Fiber Lithography: A Facile Lithography Platform Based on Electromagnetic Phase Modulation Using a Highly Birefringent Electrospun Fiber

Lithography plays a key role in advancing manufacturing as well as the semiconductor industry. However, the currently available state-of-the-art lithography methods still require access to expensive tools and facilities. Herein, we suggest a novel lithography method based on electromagnetic phase modulation of ultraviolet using a highly birefringent electrospun fiber to overcome such limitations. The optical birefringent effect, by which the phase of incident ultraviolet electromagnetic fields is retarded when passing through optically anisotropic media, is combined with semicrystalline poly(ethylene oxide) (PEO)-poly(ethylene glycol) (PEG) polymeric microfibers patterned in a programmable form using near-field electrospinning. By positioning the mask between two linear polarizers that are perpendicular to each other, only the UV waves that are passing through the fibers can be selectively utilized to exhibit lithographic property. Therefore, the UV intensity on the photoresist (PR) surface follows the shape of the fiber pattern, enabling precisely controlled patterning of the photoresist. Zero- to two-dimensional key features of lithography are achieved, including straight, curved, array, and isolated patterns. Facile optical alignments without using dedicated alignment marks are successfully demonstrated, as well as various applications including micro- to macroscale serpentine, tree, and antenna circuit patterns on a flexible substrate. The presented approach, packed in a table-top scale, is expected to provide a practical and affordable lithography solution by leveraging the direct-writing capability and tunable optical functionality of polymers, scalability, and the simple optical alignment method.