1
|
Li Y, Zhuang D, Zhao M, Wang C, Tong H, Dong L, Tao S, Wang H. Study on the Performance of Oxygen-Rich Zn(O,S) Buffers Fabricated by Sputtering Deposition and Zn(O,S)/Cu(In,Ga)(S,Se) 2 Interfaces. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24435-24446. [PMID: 35580322 DOI: 10.1021/acsami.2c04919] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We developed a novel process for fabricating oxygen-rich Zn(O,S) buffer layers by magnetron reactive sputtering with a single oxygen-rich Zn(O,S) target, suitable for industrial all-dry production. Then, we successfully fabricated Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells. By varying the oxygen partial pressure during sputtering from 0 to 20%, we precisely controlled the Zn(O,S) composition, then systematically investigated its effects on the quality of oxygen-rich Zn(O,S) films, the properties of formed p-n junctions, and the performance of CIGSSe solar cells with Zn(O,S) buffer. We demonstrated that reactive sputtering with a Zn(O,S) target can generate a homogeneous, high-quality oxygen-rich Zn(O,S) buffer on large-area substrates. We observed a unique and unusual phenomenon: the appropriate content of secondary phase ZnSO4 and ZnSO3 improved the band alignment for oxygen-rich Zn(O,S). Combining our proposed schematic diagram of band alignmentat the Zn(O,S)/CIGSSe interface, we established a crucial correlation between the device performance and the interfacial properties at the p-n junction. For the CIGSSe device performance, the band alignment matching at the heterojunction plays a primary role, and the quality of oxygen-rich Zn(O,S) films plays a secondary role. Consequently, an excellent oxygen-rich Zn(O,S) buffer can be obtained with 10% Zn(O,S) deposition oxygen partial pressure , and the optimized device shows a higher Voc (447 mV) and a similar conversion efficiency (11.2%) than conventional CIGSSe devices with CdS buffer.
Collapse
Affiliation(s)
- Yuxian Li
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
| | - Daming Zhuang
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
- Key Laboratory for Advanced Materials Processing Technology of Ministry of Education, 100084 Beijing, PR China
- State Key Laboratory of New Ceramics and Fine Processing, 100084 Beijing, PR China
| | - Ming Zhao
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
- Key Laboratory for Advanced Materials Processing Technology of Ministry of Education, 100084 Beijing, PR China
- State Key Laboratory of New Ceramics and Fine Processing, 100084 Beijing, PR China
| | - Chen Wang
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
| | - Hao Tong
- College of Mechanical and Vehicle Engineering, Taiyuan University of Technology, 030024 Taiyuan, PR China
| | - Liangzheng Dong
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
| | - Shengye Tao
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
| | - Hanpeng Wang
- School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, PR China
| |
Collapse
|
2
|
Qu X, Zhou C, Li A, Li W, Li W, Wang K, Zheng K. Atomic-Scale Observation of Unusual Dislocations in GaAs-GaAsSb Heterostructured Nanowires. ACS APPLIED MATERIALS & INTERFACES 2022; 14:7513-7521. [PMID: 35077150 DOI: 10.1021/acsami.1c24182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Cognizing the structural characteristics of a heterointerface is significant to understand the growth mechanism of heterostructured nanowires. Here, the structural characteristics of a heterointerface in GaAs-GaAsSb heterostructured nanowires were investigated by employing spherical aberration (CS)-corrected transmission electron microscopy (TEM). It is found that some unusual dislocations are formed at the heterointerface, leading to the bending of nanowires. Further, the atomically inhomogeneous distribution of Sb content near the heterointerface is revealed, which is responsible for the formation of dislocations. By applying a thermal electric system equipped in the Cs-corrected TEM, a direct observation of structural evolution at the heterointerface was enabled and the stability of GaAs-GaAsSb heterostructured nanowires was evaluated. In situ high-resolution TEM imaging indicates that the destabilization of the heterointerface occurs during nanowire annealing. This study builds a direct correlation between the nanowire heterointerfacial structure with nanowire growth behavior and its stability, which is of importance for heterostructured nanowire design for practical use.
Collapse
Affiliation(s)
- Xianlin Qu
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Chen Zhou
- National Engineering Research Center of Chemical Fertilizer Catalyst, School of Chemical Engineering, Fuzhou University, Fuzhou 350002, Fujian, China
| | - Ang Li
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Wei Li
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Wanpeng Li
- Department of Materials Science & Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong
| | - Kaiwen Wang
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Kun Zheng
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| |
Collapse
|
3
|
Wang B, Biesold GM, Zhang M, Lin Z. Amorphous inorganic semiconductors for the development of solar cell, photoelectrocatalytic and photocatalytic applications. Chem Soc Rev 2021; 50:6914-6949. [PMID: 33904560 DOI: 10.1039/d0cs01134g] [Citation(s) in RCA: 44] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Amorphous inorganic semiconductors have attracted growing interest due to their unique electrical and optical properties that arise from their intrinsic disordered structure and thermodynamic metastability. Recently, amorphous inorganic semiconductors have been applied in a variety of new technologies, including solar cells, photoelectrocatalysis, and photocatalysis. It has been reported that amorphous phases can improve both efficiency and stability in these applications. While these phenomena are well established, their mechanisms have long remained unclear. This review first introduces the general background of amorphous inorganic semiconductor properties and synthesis. Then, the recent successes and current challenges of amorphous inorganic semiconductor-based materials for applications in solar cells, photoelectrocatalysis, and photocatalysis are addressed. In particular, we discuss the mechanisms behind the remarkable performances of amorphous inorganic semiconductors in these fields. Finally, we provide insightful perspectives into further developments for applications of amorphous inorganic semiconductors.
Collapse
Affiliation(s)
- Bing Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | | | | | | |
Collapse
|
4
|
Jiang Q, Zhang X, You J. SnO 2 : A Wonderful Electron Transport Layer for Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801154. [PMID: 29939472 DOI: 10.1002/smll.201801154] [Citation(s) in RCA: 170] [Impact Index Per Article: 28.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2018] [Revised: 04/27/2018] [Indexed: 05/22/2023]
Abstract
The highest power conversion efficiency of perovskite solar cells is beyond 22%. Charge transport layers are found to be critical for device performance and stability. A traditional electron transport layer (ETL), such as TiO2 , is not very efficient for charge extraction at the interface, especially in planar structure. In addition, the devices using TiO2 suffer from serious degradation under ultraviolet illumination. SnO2 owns a better band alignment with the perovskite absorption layer and high electron mobility, which is helpful for electron extraction. In this Review, recent progresses in efficient and stable perovskite solar cells using SnO2 as ETL are summarized.
Collapse
Affiliation(s)
- Qi Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jingbi You
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
5
|
Hong CW, Shin SW, Suryawanshi MP, Gang MG, Heo J, Kim JH. Chemically Deposited CdS Buffer/Kesterite Cu 2ZnSnS 4 Solar Cells: Relationship between CdS Thickness and Device Performance. ACS APPLIED MATERIALS & INTERFACES 2017; 9:36733-36744. [PMID: 28980468 DOI: 10.1021/acsami.7b09266] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Earth-abundant, copper-zinc-tin-sulfide (CZTS), kesterite, is an attractive absorber material for thin-film solar cells (TFSCs). However, the open-circuit voltage deficit (Voc-deficit) resulting from a high recombination rate at the buffer/absorber interface is one of the major challenges that must be overcome to improve the performance of kesterite-based TFSCs. In this paper, we demonstrate the relationship between device parameters and performances for chemically deposited CdS buffer/CZTS-based heterojunction TFSCs as a function of buffer layer thickness, which could change the CdS/CZTS interface conditions such as conduction band or valence band offsets, to gain deeper insight and understanding about the Voc-deficit behavior from a high recombination rate at the CdS buffer/kesterite interface. Experimental results show that device parameters and performances are strongly dependent on the CdS buffer thickness. We postulate two meaningful consequences: (i) Device parameters were improved up to a CdS buffer thickness of 70 nm, whereas they deteriorated at a thicker CdS buffer layer. The Voc-deficit in the solar cells improved up to a CdS buffer thickness of 92 nm and then deteriorated at a thicker CdS buffer layer. (ii) The minimum values of the device parameters were obtained at 70 nm CdS thickness in the CZTS TFSCs. Finally, the highest conversion efficiency of 8.77% (Voc: 494 mV, Jsc: 34.54 mA/cm2, and FF: 51%) is obtained by applying a 70 nm thick CdS buffer to the Cu2ZnSn(S,Se)4 absorber layer.
Collapse
Affiliation(s)
- Chang Woo Hong
- Department of Materials Science and Engineering and Optoelectronic Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| | - Seung Wook Shin
- Department of Physics and Astronomy and Wright Center for Photovoltaic Innovation and Commercialization, University of Toledo , Toledo, Ohio 43606, United States
| | - Mahesh P Suryawanshi
- Department of Materials Science and Engineering and Optoelectronic Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| | - Myeng Gil Gang
- Department of Materials Science and Engineering and Optoelectronic Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| | - Jaeyeong Heo
- Department of Materials Science and Engineering and Optoelectronic Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| | - Jin Hyeok Kim
- Department of Materials Science and Engineering and Optoelectronic Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea
| |
Collapse
|
6
|
Barbé J, Tietze ML, Neophytou M, Murali B, Alarousu E, Labban AE, Abulikemu M, Yue W, Mohammed OF, McCulloch I, Amassian A, Del Gobbo S. Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2017; 9:11828-11836. [PMID: 28177212 DOI: 10.1021/acsami.6b13675] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Chemical bath deposition (CBD) of tin oxide (SnO2) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO2 (a-SnO2) films are grown from a nontoxic aqueous bath of tin chloride at a very low temperature (55 °C) and do not require postannealing treatment to work very effectively as an ETL in a planar-heterojunction n-i-p organohalide lead perovskite or organic BHJ solar cells, in lieu of the commonly used ETL materials titanium oxide (TiO2) and zinc oxide (ZnO), respectively. Ultraviolet photoelectron spectroscopy measurements on the glass/indium-tin oxide (ITO)/SnO2/methylammonium lead iodide (MAPbI3)/2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene device stack indicate that extraction of photogenerated electrons is facilitated by a perfect alignment of the conduction bands at the SnO2/MAPbI3 interface, while the deep valence band of SnO2 ensures strong hole-blocking properties. Despite exhibiting very low electron mobility, the excellent interfacial energetics combined with high transparency (Egap,optical > 4 eV) and uniform substrate coverage make the a-SnO2 ETL prepared by CBD an excellent candidate for the potentially low-cost and large-scale fabrication of organohalide lead perovskite and organic photovoltaics.
Collapse
Affiliation(s)
- Jérémy Barbé
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Max L Tietze
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Marios Neophytou
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Banavoth Murali
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Erkki Alarousu
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Abdulrahman El Labban
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Mutalifu Abulikemu
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Wan Yue
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Omar F Mohammed
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Iain McCulloch
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Aram Amassian
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| | - Silvano Del Gobbo
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia
| |
Collapse
|
7
|
Hauschild D, Handick E, Göhl-Gusenleitner S, Meyer F, Schwab H, Benkert A, Pohlner S, Palm J, Tougaard S, Heske C, Weinhardt L, Reinert F. Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surface: A Novel Determination Approach Using Reflection Electron Energy Loss Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2016; 8:21101-21105. [PMID: 27463021 DOI: 10.1021/acsami.6b06358] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Using reflection electron energy loss spectroscopy (REELS), we have investigated the optical properties at the surface of a chalcopyrite-based Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cell absorber, as well as an indium sulfide (InxSy) buffer layer before and after annealing. By fitting the characteristic inelastic scattering cross-section λK(E) to cross sections evaluated by the QUEELS-ε(k,ω)-REELS software package, we determine the surface dielectric function and optical properties of these samples. A comparison of the optical values at the surface of the InxSy film with bulk ellipsometry measurements indicates a good agreement between bulk- and surface-related optical properties. In contrast, the properties of the CIGSSe surface differ significantly from the bulk. In particular, a larger (surface) band gap than for bulk-sensitive measurements is observed, providing a complementary and independent confirmation of earlier photoelectron spectroscopy results. Finally, we derive the inelastic mean free path λ for electrons in InxSy, annealed InxSy, and CIGSSe at a kinetic energy of 1000 eV.
Collapse
Affiliation(s)
- Dirk Hauschild
- Experimental Physics VII, University of Würzburg , Am Hubland, 97074 Würzburg, Germany
| | - Evelyn Handick
- Experimental Physics VII, University of Würzburg , Am Hubland, 97074 Würzburg, Germany
| | | | - Frank Meyer
- Experimental Physics VII, University of Würzburg , Am Hubland, 97074 Würzburg, Germany
| | - Holger Schwab
- Experimental Physics VII, University of Würzburg , Am Hubland, 97074 Würzburg, Germany
| | - Andreas Benkert
- Experimental Physics VII, University of Würzburg , Am Hubland, 97074 Würzburg, Germany
- Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT) , Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | | | - Jörg Palm
- AVANCIS GmbH , Otto-Hahn-Ring 6, 81739 Munich, Germany
| | - Sven Tougaard
- Department of Physics, Chemistry and Pharmacy, University of Southern Denmark , DK-5230 Odense M, Denmark
| | - Clemens Heske
- Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT) , Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- Department of Chemistry and Biochemistry, University of Nevada , Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States
- Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT) , Engesserstrasse 18/20, 76128 Karlsruhe, Germany
| | - Lothar Weinhardt
- Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT) , Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- Department of Chemistry and Biochemistry, University of Nevada , Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States
- Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT) , Engesserstrasse 18/20, 76128 Karlsruhe, Germany
| | - Friedrich Reinert
- Experimental Physics VII, University of Würzburg , Am Hubland, 97074 Würzburg, Germany
| |
Collapse
|
8
|
Ho WH, Hsu CH, Yeh TH, Chang YH, Wei SY, Lin TY, Lai CH. Room-Temperature Chemical Solution Treatment for Flexible ZnS(O,OH)/Cu(In,Ga)Se2 Solar Cell: Improvements in Interface Properties and Metastability. ACS APPLIED MATERIALS & INTERFACES 2016; 8:6709-6717. [PMID: 26905219 DOI: 10.1021/acsami.5b11028] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We demonstrate an effective room-temperature chemical solution treatment, by using thioacetamide (S treatment) or thioacetamide-InCl3 (In-S treatment) solution, on Cu(In,Ga)Se2 (CIGSe) surface to engineer the ZnS(O,OH)/CIGSe interface and junction quality, leading to enhanced efficiency and minimized metastability of flexible solar cells. The control device without treatment reveals a relatively low efficiency of 8.15%, which is significantly improved to 9.74% by In-S treatment, and 10.39% by S treatment. Results of X-ray photoelectron spectroscopy suggest that S is incorporated into CIGSe surface forming CIGSSe by S treatment, whereas a thin In-S layer is formed on CIGSe surface by In-S treatment with reduced amount of S diffusing into CIGSe. PL spectra and TRPL lifetime further reveal that S incorporation into CIGS surface may substitute the OSe and/or directly occupy the vacant anion site (VSe), resulting in the effective passivation of the recombination centers at CIGSe surface. Moreover, reducing the concentrations of VSe may thereby decrease the density of (VCu-VSe) acceptors, which can minimize the metastability of ZnS(O,OH)/CIGSe solar cells. With S treatment, the light soaking (LS) time of ZnS(O,OH)/CIGSe device is reduced approximately to one-half of control one. Our approach can be potentially applied for alternative Cd-free buffer layers to achieve high efficiency and low metastability.
Collapse
Affiliation(s)
- Wei-Hao Ho
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| | - Chia-Hao Hsu
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| | - Tzu-Hsuan Yeh
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| | - Yu-Han Chang
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| | - Shih-Yuan Wei
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| | - Tzu-Ying Lin
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| | - Chih-Huang Lai
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
| |
Collapse
|
9
|
Wi JH, Kim TG, Kim JW, Lee WJ, Cho DH, Han WS, Chung YD. Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing. ACS APPLIED MATERIALS & INTERFACES 2015; 7:17425-17432. [PMID: 26192202 DOI: 10.1021/acsami.5b04815] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.
Collapse
Affiliation(s)
- Jae-Hyung Wi
- †Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Republic of Korea
| | - Tae Gun Kim
- ‡Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 305-350, Republic of Korea
- §Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 305-340, Republic of Korea
| | - Jeong Won Kim
- ‡Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 305-350, Republic of Korea
- §Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 305-340, Republic of Korea
| | - Woo-Jung Lee
- †Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Republic of Korea
| | - Dae-Hyung Cho
- †Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Republic of Korea
| | - Won Seok Han
- †Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Republic of Korea
| | - Yong-Duck Chung
- †Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Republic of Korea
- ‡Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 305-350, Republic of Korea
| |
Collapse
|
10
|
Shin D, Kim T, Ahn BT, Han SM. Solution-Processed Ag Nanowires + PEDOT:PSS Hybrid Electrode for Cu(In,Ga)Se₂ Thin-Film Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2015; 7:13557-13563. [PMID: 26017872 DOI: 10.1021/acsami.5b02989] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
UNLABELLED To reduce the cost of the Cu(In,Ga)Se2 (CIGS) solar cells while maximizing the efficiency, we report the use of an Ag nanowires (NWs) + poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PEDOT PSS) hybrid transparent electrode, which was deposited using all-solution-processed, low-cost, scalable methods. This is the first demonstration of an Ag NWs + PEDOT PSS transparent electrode applied to CIGS solar cells. The spin-coated 10-nm-thick PEDOT PSS conducting polymer layer in our hybrid electrode functioned as a filler of empty space of an electrostatically sprayed Ag NW network. Coating of PEDOT PSS on the Ag NW network resulted in an increase in the short-circuit current from 15.4 to 26.5 mA/cm(2), but the open-circuit voltage and shunt resistance still needed to be improved. The limited open-circuit voltage was found to be due to interfacial recombination that is due to the ineffective hole-blocking ability of the CdS film. To suppress the interfacial recombination between Ag NWs and the CdS film, a Zn(S,O,OH) film was introduced as a hole-blocking layer between the CdS film and Ag NW network. The open-circuit voltage of the cell sharply improved from 0.35 to 0.6 V, which resulted in the best cell efficiency of 11.6%.
Collapse
Affiliation(s)
- Donghyeop Shin
- †Department of Materials Science and Engineering and §Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
| | - Taegeon Kim
- †Department of Materials Science and Engineering and §Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
| | - Byung Tae Ahn
- †Department of Materials Science and Engineering and §Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
| | - Seung Min Han
- †Department of Materials Science and Engineering and §Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
| |
Collapse
|