Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics

Developments and Challenges Involving Triplet Transfer across Organic/Inorganic Heterojunctions for Singlet Fission and Photon Upconversion

In this Perspective, we provide an overview of recent advances in harvesting triplets for photovoltaic and photon upconversion applications from two angles. In singlet fission-sensitized solar cells, the triplets are harvested through a low band gap semiconductor such as Si. Recent literature has shown how a thin interlayer or orientation of the singlet fission molecule can successfully lead to triplet transfer. On the other hand, the integration of transition metal dichalcogenides (TMDCs) with suitable organic molecules has shown triplet-triplet annihilation upconversion (TTA-UC) of near-infrared photons. We consider the theoretical aspect of the triplet transfer process between a TMDC and organic semiconductors. We discuss possible bottlenecks that can limit the harvesting of energy from triplets and perspectives to overcome these.

Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes

The limited sensitivity of photovoltaic-type photodiodes makes it indispensable to use pre-amplifier circuits for effectively extracting electrical signals, especially when detecting dim light. Additionally, the photomultiplication photodiodes with light amplification function suffer from potential damages caused by high power consumption under strong light. In this work, by adopting the synergy strategy of thermal-induced interfacial structural traps and blocking layers, we develop a dual-mode visible-near infrared organic photodiode with bias-switchable photomultiplication and photovoltaic operating modes, exhibiting high specific detectivity (~1012 Jones) and fast response speed (0.05/3.03 ms for photomultiplication-mode; 8.64/11.14 μs for photovoltaic-mode). The device also delivers disparate external quantum efficiency in two optional operating modes, showing potential in simultaneously detecting dim and strong light ranging from ~10-9 to 10-1 W cm-2. The general strategy and working mechanism are validated in different organic layers. This work offers an attractive option to develop bias-switchable multi-mode organic photodetectors for various application scenarios.

Electronic Structure and Excited State Dynamics of Cadmium Chalcogenide Nanorods

The cylindrical quasi-one-dimensional shape of colloidal semiconductor nanorods (NRs) gives them unique electronic structure and optical properties. In addition to the band gap tunability common to nanocrystals, NRs have polarized light absorption and emission and high molar absorptivities. NR-shaped heterostructures feature control of electron and hole locations as well as light emission energy and efficiency. We comprehensively review the electronic structure and optical properties of Cd-chalcogenide NRs and NR heterostructures (e.g., CdSe/CdS dot-in-rods, CdSe/ZnS rod-in-rods), which have been widely investigated over the last two decades due in part to promising optoelectronic applications. We start by describing methods for synthesizing these colloidal NRs. We then detail the electronic structure of single-component and heterostructure NRs and follow with a discussion of light absorption and emission in these materials. Next, we describe the excited state dynamics of these NRs, including carrier cooling, carrier and exciton migration, radiative and nonradiative recombination, multiexciton generation and dynamics, and processes that involve trapped carriers. Finally, we describe charge transfer from photoexcited NRs and connect the dynamics of these processes with light-driven chemistry. We end with an outlook that highlights some of the outstanding questions about the excited state properties of Cd-chalcogenide NRs.

Theoretical Study of the Structural, Optoelectronic, and Reactivity Properties of N-[5′-Methyl-3′-Isoxasolyl]-N-[(E)-1-(-2-)]Methylidene] Amine and Some of Its Fe2+, Co2+, Ni2+, Cu2+, and Zn2+ Complexes for OLED and OFET Applications

Herein, we report the structural, electronic, and charge transfer properties of N-[5′-methyl-3′-isoxasolyl]-N-[(E)-1-(-2-thiophene)] methylidene] amine (L) and its Fe2+, Co2+, Ni2+, Cu2+, and Zn2+ complexes (dubbed A, B, C, D, and E, respectively) using the density functional theory (DFT). All molecules investigated were optimized at the BP86/def2-TZVP/RI level of theory. Single point energy calculations were carried out at the M06-D3ZERO/def2-TZVP/RIJCOSX level of theory. Reorganization energies of the hole and electron (λh and λe) and the charge transfer mobilities of the electron and hole (μe and μh) have been computed and reported. The λe and λh values vary in the order D > E > A > B > C > L and E > A > D > L > C > B, respectively, while μe and μh vary in the order B > C > L > A > E > D and C > B > A > L > E > D, respectively. μh of B (39.5401 cm2·V−1S−1) and C (366.4740 cm2·V−1s−1) is remarkably large, suggesting their application in organic light-emitting diode (OLED) and organic field-effect transistor (OFET) technologies. Electron excitation analysis based on time-dependent (TD)-DFT calculations revealed that charge transfer excitations may significantly affect charge transfer mobilities. Based on charge transfer mobility results, B and C are outstanding and are promising molecules for the manufacture of electron and hole-transport precursor materials for the construction of OLED and OFET devices as compared to L. The results also show that L and all its complexes interestingly have higher third-order NLO activity than those of para-nitroaniline, a prototypical NLO molecule.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

Photoconductivity Multiplication in Semiconducting Few-Layer MoTe2

We report efficient photoconductivity multiplication in few-layer 2H-MoTe₂ as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (∼45 cm² V^-1 s^-1) in MoTe₂. This photoconductivity multiplication is quantified using ultrafast, excitation-wavelength-dependent photoconductivity measurements employing contact-free terahertz spectroscopy. We discuss the possible origins of efficient carrier multiplication in MoTe₂ to guide future theoretical investigations. The combination of photoconductivity multiplication and the advantageous bandgap renders MoTe₂ as a promising candidate for efficient optoelectronic devices.

Efficient Carrier Multiplication in Low Band Gap Mixed Sn/Pb Halide Perovskites

Carrier multiplication (CM) generates multiple electron-hole pairs in a semiconductor from a single absorbed photon with energy exceeding twice the band gap. Thus, CM provides a promising way to circumvent the Shockley-Queisser limit of solar cells. The ideal material for CM should have significant overlap with the solar spectrum and should be able to fully utilize the excess energy above the band gap for additional charge carrier generation. We report efficient CM in mixed Sn/Pb halide perovskites (band gap of 1.28 eV) with onset just above twice the band gap. The CM rate outcompetes the carrier cooling process leading to efficient CM with a quantum yield of 2 for photoexcitation at 2.8 times the band gap. Such efficient CM characteristics add to the many advantageous properties of mixed Sn/Pb metal halide perovskites for photovoltaic applications.

Phonon-Mediated and Weakly Size-Dependent Electron and Hole Cooling in CsPbBr3 Nanocrystals Revealed by Atomistic Simulations and Ultrafast Spectroscopy

We combine state-of-the-art ultrafast photoluminescence and absorption spectroscopy and nonadiabatic molecular dynamics simulations to investigate charge-carrier cooling in CsPbBr3 nanocrystals over a very broad size regime, from 0.8 to 12 nm. Contrary to the prevailing notion that polaron formation slows down charge-carrier cooling in lead-halide perovskites, no suppression of carrier cooling is observed in CsPbBr3 nanocrystals except for a slow cooling (over ∼10 ps) of "warm" electrons in the vicinity (within ∼0.1 eV) of the conduction band edge. At higher excess energies, electrons and holes cool with similar rates, on the order of 1 eV ps-1 carrier-1, increasing weakly with size. Our ab initio simulations suggest that cooling proceeds via fast phonon-mediated intraband transitions driven by strong and size-dependent electron-phonon coupling. The presented experimental and computational methods yield the spectrum of involved phonons and may guide the development of devices utilizing hot charge carriers.

Photoexcitation of PbS nanosheets leads to highly mobile charge carriers and stable excitons

Solution-processable two-dimensional (2D) semiconductors with chemically tunable thickness and associated tunable band gaps are highly promising materials for ultrathin optoelectronics. Here, the properties of free charge carriers and excitons in 2D PbS nanosheets of different thickness are investigated by means of optical pump-terahertz probe spectroscopy. By analyzing the frequency-dependent THz response, a large quantum yield of excitons is found. The scattering time of free charge carriers increases with nanosheet thickness, which is ascribed to reduced effects of surface defects and ligands in thicker nanosheets. The data discussed provide values for the DC mobility in the range 550-1000 cm² V^-1 s^-1 for PbS nanosheets with thicknesses ranging from 4 to 16 nm. Results underpin the suitability of colloidal 2D PbS nanosheets for optoelectronic applications.

Bandgap Engineering of Indium Phosphide-Based Core/Shell Heterostructures Through Shell Composition and Thickness

The large bulk bandgap (1.35 eV) and Bohr radius (~10 nm) of InP semiconductor nanocrystals provides bandgap tunability over a wide spectral range, providing superior color tuning compared to that of CdSe quantum dots. In this paper, the dependence of the bandgap, photoluminescence emission, and exciton radiative lifetime of core/shell quantum dot heterostructures has been investigated using colloidal InP core nanocrystals with multiple diameters (1.5, 2.5, and 3.7 nm). The shell thickness and composition dependence of the bandgap for type-I and type-II heterostructures was observed by coating the InP core with ZnS, ZnSe, CdS, or CdSe through one to ten iterations of a successive ion layer adsorption and reaction (SILAR)-based shell deposition. The empirical results are compared to bandgap energy predictions made with effective mass modeling. Photoluminescence emission colors have been successfully tuned throughout the visible and into the near infrared (NIR) wavelength ranges for type-I and type-II heterostructures, respectively. Based on sizing data from transmission electron microscopy (TEM), it is observed that at the same particle diameter, average radiative lifetimes can differ as much as 20-fold across different shell compositions due to the relative positions of valence and conduction bands. In this direct comparison of InP/ZnS, InP/ZnSe, InP/CdS, and InP/CdSe core/shell heterostructures, we clearly delineate the impact of core size, shell composition, and shell thickness on the resulting optical properties. Specifically, Zn-based shells yield type-I structures that are color tuned through core size, while the Cd-based shells yield type-II particles that emit in the NIR regardless of the starting core size if several layers of CdS(e) have been successfully deposited. Particles with thicker CdS(e) shells exhibit longer photoluminescence lifetimes, while little shell-thickness dependence is observed for the Zn-based shells. Taken together, these InP-based heterostructures demonstrate the extent to which we are able to precisely tailor the material properties of core/shell particles using core/shell dimensions and composition as variables.

Electron-Phonon Coupling and Resonant Relaxation from 1D and 1P States in PbS Quantum Dots

Observations of the hot-phonon bottleneck, which is predicted to slow the rate of hot carrier cooling in quantum confined nanocrystals, have been limited to date for reasons that are not fully understood. We used time-resolved infrared spectroscopy to directly measure higher energy intraband transitions in PbS colloidal quantum dots. Direct measurements of these intraband transitions permitted detailed analysis of the electronic overlap of the quantum confined states that may influence their relaxation processes. In smaller PbS nanocrystals, where the hot-phonon bottleneck is expected to be most pronounced, we found that relaxation of parity selection rules combined with stronger electron-phonon coupling led to greater spectral overlap of transitions among the quantum confined states. This created pathways for fast energy transfer and relaxation that may bypass the predicted hot-phonon bottleneck. In contrast, larger, but still quantum confined nanocrystals did not exhibit such relaxation of the parity selection rules and possessed narrower intraband states. These observations were consistent with slower relaxation dynamics that have been measured in larger quantum confined systems. These findings indicated that, at small radii, electron-phonon interactions overcome the advantageous increase in energetic separation of the electronic states for PbS quantum dots. Selection of appropriately sized quantum dots, which minimize spectral broadening due to electron-phonon interactions while maximizing electronic state separation, is necessary to observe the hot-phonon bottleneck. Such optimization may provide a framework for achieving efficient hot carrier collection and multiple exciton generation.

Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Carrier multiplication is a process in which one absorbed photon excites two or more electrons. This is of great promise to increase the efficiency of photovoltaic devices. Until now, the factors that determine the onset energy of carrier multiplication have not been convincingly explained. We show experimentally that the onset of carrier multiplication in lead chalcogenide quantum confined and bulk crystals is due to asymmetric optical transitions. In such transitions most of the photon energy in excess of the band gap is given to either the hole or the electron. The results are confirmed and explained by theoretical tight-binding calculations of the competition between impact ionization and carrier cooling. These results are a large step forward in understanding carrier multiplication and allow for a screening of materials with an onset of carrier multiplication close to twice the band gap energy. Such materials are of great interest for development of highly efficient photovoltaic devices.

Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals

Carrier multiplication (CM) is a process in which a single photon excites two or more electrons. CM is of interest to enhance the efficiency of a solar cell. Until now, CM in thin films and solar cells of semiconductor nanocrystals (NCs) has been found at photon energies well above the minimum required energy of twice the band gap. The high threshold of CM strongly limits the benefits for solar cell applications. We show that CM is more efficient in a percolative network of directly connected PbSe NCs. The CM threshold is at twice the band gap and increases in a steplike fashion with photon energy. A lower CM efficiency is found for a solid of weaker coupled NCs. This demonstrates that the coupling between NCs strongly affects the CM efficiency. According to device simulations, the measured CM efficiency would significantly enhance the power conversion efficiency of a solar cell.

Carrier Multiplication Mechanisms and Competing Processes in Colloidal Semiconductor Nanostructures

Quantum confined semiconductor nanoparticles, such as colloidal quantum dots, nanorods and nanoplatelets have broad extended absorption spectra at energies above their bandgaps. This means that they can absorb light at high photon energies leading to the formation of hot excitons with finite excited state lifetimes. During their existence, the hot electron and hole that comprise the exciton may start to cool as they relax to the band edge by phonon mediated or Auger cooling processes or a combination of these. Alongside these cooling processes, there is the possibility that the hot exciton may split into two or more lower energy excitons in what is termed carrier multiplication (CM). The fission of the hot exciton to form lower energy multiexcitons is in direct competition with the cooling processes, with the timescales for multiplication and cooling often overlapping strongly in many materials. Once CM has been achieved, the next challenge is to preserve the multiexcitons long enough to make use of the bonus carriers in the face of another competing process, non-radiative Auger recombination. However, it has been found that Auger recombination and the several possible cooling processes can be manipulated and usefully suppressed or retarded by engineering the nanoparticle shape, size or composition and by the use of heterostructures, along with different choices of surface treatments. This review surveys some of the work that has led to an understanding of the rich carrier dynamics in semiconductor nanoparticles, and that has started to guide materials researchers to nanostructures that can tilt the balance in favour of efficient CM with sustained multiexciton lifetimes.

Efficient Carrier Multiplication in Colloidal Silicon Nanorods

Auger recombination lifetimes, absorption cross sections, and the quantum yields of carrier multiplication (CM), or multiexciton generation (MEG), were determined for solvent-dispersed silicon (Si) nanorods using transient absorption spectroscopy (TAS). Nanorods with an average diameter of 7.5 nm and aspect ratios of 6.1, 19.3, and 33.2 were examined. Colloidal Si nanocrystals of similar diameters were also studied for comparison. The nanocrystals and nanorods were passivated with organic ligands by hydrosilylation to prevent surface oxidation and limit the effects of surface trapping of photoexcited carriers. All samples used in the study exhibited relatively efficient photoluminescence. The Auger lifetimes increased with nanorod length, and the nanorods exhibited higher CM quantum yield and efficiency than the nanocrystals with a similar band gap energy E_g. Beyond a critical length, the CM quantum yield decreases. Nanorods with the aspect ratio of 19.3 had the highest CM quantum yield of 1.6 ± 0.2 at 2.9E_g, which corresponded to a multiexciton yield that was twice as high as observed for the spherical nanocrystals.

Expanding light utilization to the near-infrared region for hybrid bio-photoelectrochemical cells

The insatiable energy demand asks for the maximum conversion of green renewable sources. Herein, we propose the first NIR-assisted glucose/air bio-photoelectrochemical (BPEC) cell comprising a rare earth up-conversion microcrystal (UCMC)-based polyterthiophene (pTTh) cathode. Upon irradiation with a 980 nm laser, UCMCs emit robust luminescence in the visible range, which can efficiently excite pTTh, catalyzing the reduction of oxygen and generating photocurrent. Coupling with a glucose oxidation bioanode, this assembled BPEC cell exhibits a maximal output power density of 40.6 μW cm^-2 and an open circuit voltage of 0.53 V. This success is an essential conceptual steppingstone towards the comprehensive utilization of whole sunlight and offers alternative solutions for multiple energy conversions.

Broadband Cooling Spectra of Hot Electrons and Holes in PbSe Quantum Dots

Understanding cooling of hot charge carriers in semiconductor quantum dots (QDs) is of fundamental interest and useful to enhance the performance of QDs in photovoltaics. We study electron and hole cooling dynamics in PbSe QDs up to high energies where carrier multiplication occurs. We characterize distinct cooling steps of hot electrons and holes and build up a broadband cooling spectrum for both charge carriers. Cooling of electrons is slower than of holes. At energies near the band gap we find cooling times between successive electronic energy levels in the order of 0.5 ps. We argue that here the large spacing between successive electronic energy levels requires cooling to occur by energy transfer to vibrational modes of ligand molecules or phonon modes associated with the QD surface. At high excess energy the energy loss rate of electrons is 1-5 eV/ps and exceeds 8 eV/ps for holes. Here charge carrier cooling can be understood in terms of emission of LO phonons with a higher density-of-states in the valence band than the conduction band. The complete mapping of the broadband cooling spectrum for both charge carriers in PbSe QDs is a big step toward understanding and controlling the cooling of hot charge carriers in colloidal QDs.

Boosting Biexciton Collection Efficiency at Quantum Dot-Oxide Interfaces by Hole Localization at the Quantum Dot Shell

Harvesting multiexcitons from semiconductor quantum dots (QDs) has been proposed as a path toward photovoltaic efficiencies beyond the Shockley-Queisser limit. Although multiexciton generation efficiencies have been quantified extensively in QD structures, the challenge of actually collecting multiple excitons at electrodes-a prerequisite for high-efficiency solar cell devices-has received less attention. Here, we demonstrate that multiexciton collection (MEC) at the PbS QD/mesoporous SnO₂ interface can be boosted 5-fold from ∼15 to reach ∼80% quantum yield, by partial localization of holes in a QD molecular capping shell. The resulting weakened Coulombic interactions give rise to reduced Auger recombination rates within the molecularly capped QDs, so that biexciton Auger relaxation, competing with MEC, is strongly suppressed. These results not only highlight the importance of surface chemistry and energetics at QD/ligand interfaces for multiexciton extraction but also provide clear design principles for realizing the benefits of MEG in sensitized systems exploited in solar cells and fuel geometries.

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

Diverse dissolution–recrystallization structural transformations and sequential Förster resonance energy transfer behavior of a luminescent porous Cd-MOF

The fluorescent porous MOFs can be host materials to explore vectorial Förster resonance energy transfer between MOFs and organic dyes.

Ultrafast Two-Electron Transfer in a CdS Quantum Dot-Extended-Viologen Cyclophane Complex

Time-resolved optical spectroscopies reveal multielectron transfer from the biexcitonic state of a CdS quantum dot to an adsorbed tetracationic compound cyclobis(4,4'-(1,4-phenylene) bipyridin-1-ium-1,4-phenylene-bis(methylene)) (ExBox(4+)) to form both the ExBox(3+•) and the doubly reduced ExBox(2(+•)) states from a single laser pulse. Electron transfer in the single-exciton regime occurs in 1 ps. At higher excitation powers the second electron transfer takes ∼5 ps, which leads to a mixture of redox states of the acceptor ligand. The doubly reduced ExBox(2(+•)) state has a lifetime of ∼10 ns, while CdS(+•):ExBox(3+•) recombines with multiple time constants, the longest of which is ∼300 μs. The long-lived charge separation and ability to accumulate multiple charges on ExBox(4+) demonstrate the potential of the CdS:ExBox(4+) complex to serve as a platform for two-electron photocatalysis.

Nanoarchitectonics for Dynamic Functional Materials from Atomic-/Molecular-Level Manipulation to Macroscopic Action

Objects in all dimensions are subject to translational dynamism and dynamic mutual interactions, and the ability to exert control over these events is one of the keys to the synthesis of functional materials. For the development of materials with truly dynamic functionalities, a paradigm shift from "nanotechnology" to "nanoarchitectonics" is proposed, with the aim of design and preparation of functional materials through dynamic harmonization of atomic-/molecular-level manipulation and control, chemical nanofabrication, self-organization, and field-controlled organization. Here, various examples of dynamic functional materials are presented from the atom/molecular-level to macroscopic dimensions. These systems, including atomic switches, molecular machines, molecular shuttles, motional crystals, metal-organic frameworks, layered assemblies, gels, supramolecular assemblies of biomaterials, DNA origami, hollow silica capsules, and mesoporous materials, are described according to their various dynamic functions, which include short-term plasticity, long-term potentiation, molecular manipulation, switchable catalysis, self-healing properties, supramolecular chirality, morphological control, drug storage and release, light-harvesting, mechanochemical transduction, molecular tuning molecular recognition, hand-operated nanotechnology.

Photocatalytic Conversion of Nitrobenzene to Aniline through Sequential Proton-Coupled One-Electron Transfers from a Cadmium Sulfide Quantum Dot

This paper describes the use of cadmium sulfide quantum dots (CdS QDs) as visible-light photocatalysts for the reduction of nitrobenzene to aniline through six sequential photoinduced, proton-coupled electron transfers. At pH 3.6-4.3, the internal quantum yield of photons-to-reducing electrons is 37.1% over 54 h of illumination, with no apparent decrease in catalyst activity. Monitoring of the QD exciton by transient absorption reveals that, for each step in the catalytic cycle, the sacrificial reductant, 3-mercaptopropionic acid, scavenges the excitonic hole in ∼5 ps to form QD(•-); electron transfer to nitrobenzene or the intermediates nitrosobenzene and phenylhydroxylamine then occurs on the nanosecond time scale. The rate constants for the single-electron transfer reactions are correlated with the driving forces for the corresponding proton-coupled electron transfers. This result suggests, but does not prove, that electron transfer, not proton transfer, is rate-limiting for these reactions. Nuclear magnetic resonance analysis of the QD-molecule systems shows that the photoproduct aniline, left unprotonated, serves as a poison for the QD catalyst by adsorbing to its surface. Performing the reaction at an acidic pH not only encourages aniline to desorb but also increases the probability of protonated intermediates; the latter effect probably ensures that recruitment of protons is not rate-limiting.

Hole Cooling Is Much Faster than Electron Cooling in PbSe Quantum Dots

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

A facile method for the synthesis of CuInS2–ZnS quantum dots with tunable photoluminescent properties

CuInS₂/CuInS₂–ZnS quantum dots showed excellent tunable photoluminescent properties, which demonstrate great potential for practical applications due to their non-toxicity and excellent optical properties.

Computational insights into CdSe quantum dots' interactions with acetate ligands

Using density functional theory (DFT) and time-dependent DFT (TDDFT), we investigate the effects of carboxylate groups on the electronic and optical properties of CdSe quantum dots (QDs).

Hot exciton cooling and multiple exciton generation in PbSe quantum dots

PbSe QDs show high multiple exciton generation (MEG) quantum yield. Here we have investigated the role of theΣtransition in slowing down the hot exciton cooling, which can help MEG to take over phonon relaxation.

Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

In semiconductors, the absorption of a high energy photon can result in the formation of several charge pairs. Here the authors perform ultrafast photocurrent measurements on thin films to explore how quantum dot couplings and the electric field influence multiexciton photovoltaic devices.

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

We discuss optical energy transfer involving ions, QDs, molecules etc., together with the relevant applications in different areas.