X-ray Characterization, Electronic Band Structure, and Thermoelectric Properties of the Cluster Compound Ag2Tl2Mo9Se11

Three-Fold Coordination of Copper in Sulfides: A Blockade for Hole Carrier Delocalization but a Driving Force for Ultralow Thermal Conductivity

Copper-rich sulfides are very promising for energy conversion applications due to their environmental compatibility, cost effectiveness, and earth abundance. Based on a comparative analysis of the structural and transport properties of Cu3BiS3 with those of tetrahedrite (Cu12Sb4S13) and other Cu-rich sulfides, we highlight the role of the cationic coordination types and networks on the electrical and thermal properties. By precession-assisted 3D electron diffraction analysis, we find very high anisotropic thermal vibration of copper attributed to its 3-fold coordination, with an anisotropic atomic displacement parameter up to 0.09 Å2. Density functional theory calculations reveal that these Cu atoms are weakly bonded and give rise to low-energy Einstein-like vibrational modes that strongly scatter heat-carrying acoustic phonons, leading to ultralow thermal conductivity. Importantly, we demonstrate that the 3-fold coordination of copper in Cu3BiS3 and in other copper-rich sulfides constituted of interconnected CuS3 networks causes a hole blockade. This phenomenon hinders the possibility of optimizing the carrier concentration and electronic properties through mixed valency Cu+/Cu2+, differently from tetrahedrite and most other copper-rich chalcogenides, where the main interconnected Cu-S network is built of CuS4 tetrahedra. The comparison with various copper-rich sulfides demonstrates that seeking for frameworks characterized by the coexistence of tetrahedral and 3-fold coordinated copper is very attractive for the discovery of efficient thermoelectric copper-rich sulfides. Considering that lattice vibrations and carrier concentration are key factors for engineering transport phenomena (electronic, phonon, ionic, etc.) in copper-rich chalcogenides for various types of applications, our findings improve the guidelines for the design of materials enabling sustainable energy solutions with wide-ranging applications.

2.11 - Accurate characterization of indoor photovoltaic performance

Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.

Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19

Mo-based cluster compounds are a large class of materials with complex crystal structures that give rise to very low lattice thermal conductivity. Here, we report on the crystal structure and transport property measurements (5-800 K) of the novel Tl-filled compound Ag₃Tl₂Mo₁₅Se₁₉. This compound adopts a crystal structure described in the rhombohedral R3 c space group [ a = 9.9601(1) Å, c = 57.3025(8) Å, and Z = 6] built by the covalent arrangement of octahedral Mo₆ and bioctahedral Mo₉ clusters in a 1:1 ratio, with the Ag and Tl atoms filling the large cavities between them. Transport property measurements performed on polycrystalline samples indicate that this compound behaves as a heavily doped semiconductor with mixed electrical conduction. Electronic band structure calculations combined with a semiclassical approach using the Boltzmann transport equation are in good agreement with these measurements. This compound exhibits a lattice thermal conductivity as low as 0.4 W m^-1 K^-1 because of highly disordered Ag and Tl atoms. Because of the low thermopower values induced by the mixed electrical conduction, the dimensionless thermoelectric figure of merit ZT remains moderate with a peak value of 0.18 at 750 K.

Crystal Structure and Transport Properties of the Homologous Compounds (PbSe)5(Bi2Se3)3m (m = 2, 3)

We report on a detailed investigation of the crystal structure and transport properties in a broad temperature range (2-723 K) of the homologous compounds (PbSe)₅(Bi₂Se₃)_3m for m = 2, 3. Single-crystal X-ray diffraction data indicate that the m = 2, 3 compounds crystallize in the monoclinic space groups C2/m (No. 12) and P2₁/m (No. 11), respectively. In agreement with diffraction data, high-resolution transmission electron microscopy analyses carried out on single crystals show that the three-dimensional crystal structures are built from alternating Pb-Se and m Bi-Se layers stacked along the a axis in both compounds. Scanning electron microcopy and electron-probe microanalyses reveal deviations from the nominal stoichiometry, suggesting a domain of existence in the pseudo binary phase diagram at 873 K. The complex atomic-scale structures of these compounds lead to very low lattice thermal conductivities κ_L that approach the glassy limit at high temperatures. A comparison of the κ_L values across this series unveiled an unexpected increase with increasing m from m = 1 to m = 3, in contrast to the expectation that increasing the structural complexity should tend to lower the thermal transport. This result points to a decisive role played by the Pb-Se/Bi-Se interfaces in limiting κ_L in this series. Both compounds behave as heavily doped n-type semiconductors with relatively low electrical resistivity and thermopower values. As a result, moderate peak ZT values of 0.25 and 0.20 at 700 K were achieved in the m = 2, 3 compounds, respectively. The inherent poor ability of these structures to conduct heat suggests that these homologous compounds may show interesting thermoelectric properties when properly optimized by extrinsic dopants.

Synthesis, Crystal Structure, and Transport Properties of the Hexagonal Mo9 Cluster Compound Ag3RbMo9Se11

Mo-based cluster compounds are promising candidates for thermoelectric applications at high temperatures due to their very low lattice thermal conductivity values. Here, we report on a detailed investigation of the crystal structure and transport properties measured in a wide range of temperatures (2-800 K) of polycrystalline Ag₃RbMo₉Se₁₁. Single-crystal X-ray diffraction shows that this compound crystallizes in the hexagonal space group P6₃/m. The crystal structure is formed by stacked Mo₉Se₁₁ units leaving channels that are randomly filled by Rb⁺ cations, while Ag⁺ cations are located between the Mo₉Se₁₁ units. The high disorder in the unit cell induced by these atoms and their large anisotropic thermal displacement parameters are two key characteristics that lead to very low lattice thermal conductivity as low as 0.6 W m^-1 K^-1 at 800 K. The combination of semiconducting-like electrical properties and low ability to transport heat leads to a maximum dimensionless thermoelectric figure of merit ZT of 0.4 at 800 K.

Enhancement of the Thermoelectric Properties of FeGa3-type Structures with Group 6 Transition Metals: A Computational Exploration

The possible existence of group 6 TM₃ compounds with T = Cr, Mo, W and M = Ga, In is investigated with the aid of density functional theory calculations. Their most probable crystal structure is expected to be of the FeGa₃ type tetragonal space group P4₂/mnm. All compounds are computed to be semiconductors with a band gap ranging from 0.08 to 0.43 eV, at the modified Becke-Johnson level of theory. The thermoelectric properties are analyzed via calculations based on Boltzmann transport equation under a constant relaxation time approximation. Promising power factors are computed for both n- and p-type WGa₃ because of a band degeneracy around the Fermi level similar to that of heavily doped PbTe and SnTe materials. If the optimal chemical potential can be reached, a thermoelectric figure of merit up to 0.6 at 800 K for both n- and p-type may be expected for WGa₃.

Cu Insertion Into the Mo12 Cluster Compound Cs2Mo12Se14: Synthesis, Crystal and Electronic Structures, and Physical Properties

Mo-based cluster compounds are promising materials for high-temperature thermoelectric applications due to their intrinsic, extremely low thermal conductivity values. In this study, polycrystalline cluster compounds Cs2CuxMo12Se14 were prepared for a wide range of Cu contents (0 ≤ x ≤ 2). All samples crystallize isostructurally in the trigonal space group R3̅. The position of the Cu atoms in the unit cell was determined by X-ray diffraction on a single-crystalline specimen indicating that these atoms fill the empty space between the Mo-Se clusters. Density functional theory calculations predict a metallic ground state for all compositions, in good agreement with the experimental findings. Magnetization measurements indicate a rapid suppression of the superconducting state that develops in the x = 0.0 sample upon Cu insertion. Transport properties measurements, performed in a wide temperature range (2-630 K) on the two end-member compounds x = 0 and x = 2, revealed a multiband electrical conduction as shown by sign reversal of the thermopower as a function of temperature.

Thermoelectric properties of double-substituted tetrahedrites Cu12−xCoxSb4−yTeyS13

This work reports on a detailed study of the thermoelectric properties of the double-substituted tetrahedrites Cu_12−xCo_xSb_4−yTe_yS₁₃ in a wide range of temperatures (5–700 K) with a peak ZT of 0.8 at 700 K.

Electronic structure, low-temperature transport and thermodynamic properties of polymorphic β-As2Te3

The first-order lattice distortion undergone by β-As₂Te₃ around 200 K results in a cycling effect on its transport properties.

Combined theoretical and time-resolved photoluminescence investigations of [Mo6Bri8Bra6]2− metal cluster units: evidence of dual emission

Distinct emissive species have been identified in [Mo₆Brⁱ₈Br^a₆]²⁻ containing systems. Strong geometrical relaxations of the triplet excited states are responsible for the huge energy shift leading to intense red-NIR emission.