In Situ Mechanistic Studies of Two Divergent Synthesis Routes Forming the Heteroanionic BiOCuSe

Laser power and high-temperature dependent Raman studies of layered bismuth and copper-based oxytellurides for optoelectronic applications

Layered metal oxychalcogenide materials have gained significant attention in recent years due to their numerous applications in various emerging fields. The bismuth (Bi) based ternary and quaternary oxychalcogenide materials have become popular due to their excellent potential in optoelectronic, thermoelectric, and semiconducting applications. Adding copper (Cu) to these building matrices has enhanced their usefulness in various ways. In this work, Bi and Cu-based ternary and quaternary layered oxytellurides are synthesized using a unique, rarely used "microwave (MW) assisted method," and their temperature and laser power-dependent Raman measurements are carried out. All the samples are prepared at the same MW power and at a fixed irradiation time. Crystallographic studies show that the good crystallinity of the synthesized materials matches well with the phases reported previously. Nanosheet-like morphology was observed for all the prepared samples. The optical properties and band gap energies of these materials were obtained using the diffuse reflectance spectroscopy technique, which are in the range of 1.15-2.52 eV. The photoluminescence spectrum shows broad peaks around orange-red regions, indicating the potential applicability of these materials in various optoelectronic applications. The effect of high temperature and laser power on the Raman spectra of the oxytellurides is demonstrated, where the appearance of different vibrational modes along with a redshift in peak positions with the increase in temperature and power is observed.

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1-xTex in the Bi2O2X System

In addressing the global need for sustainable energy conversion, this study presents a breakthrough in thermoelectric materials research by optimizing the Bi2O2Se1-xTex system in the Bi2O2Se/Bi2O2Te pseudobinary series. Leveraging the principles of innovative transport mechanisms and defect engineering, we introduce tellurium (Te) doping into Bi2O2Se to enhance its thermoelectric properties synergistically. With the help of various advanced characterization tools such as XRD, SEM, TEM, XPS, FTIR, TGA, LFA, and DSC, combined with relevant resistance and density measurement techniques, we conducted an in-depth exploration of the complex interactions between various factors within thermoelectric materials. We recognize that the balance and synergy of these factors in the thermoelectric conversion process are crucial to achieving efficient energy conversion. Through systematic research, we are committed to revealing the mechanisms of these interactions and providing a solid scientific foundation for the optimal design and performance enhancement of thermoelectric materials. Finally, the advantage coefficient (ZT) of the thermoelectric material has been significantly improved. The crystallographic analysis confirms the formation of a continuous series of mixed crystals with varying Te concentrations, adhering to Vegard's law and exhibiting significant improvements in electrical and thermal conductivities. The Bi2O2Se1-xTex crystals, particularly the Bi2O2Se0.6Te0.4 composition, demonstrate a peak ZT of 0.86 at 373 K. This achievement aligns with recent advancements in defect-enabled mechanisms and band convergence and sets a new standard for high-performance thermoelectrics. The study's findings contribute significantly to the ongoing quest for efficient thermal-to-electrical energy conversion, offering a promising avenue for future sustainable energy technologies.

Chemical Vapor Deposition of Quaternary 2D BiCuSeO p-Type Semiconductor with Intrinsic Degeneracy

2D BiCuSeO is an intrinsic p-type degenerate semiconductor due to its self-doping effect, which possesses great potential to fabricate high-performance 2D-2D tunnel field-effect transistors (TFETs). However, the controllable synthesis of multinary 2D materials by chemical vapor deposition (CVD) is still a challenge due to the restriction of thermodynamics. Here, the CVD synthesis of quaternary 2D BiCuSeO nanosheets is realized. As-grown BiCuSeO nanosheets with thickness down to ≈6.1 nm (≈7 layers) and domain size of ≈277 µm show excellent ambient stability. Intrinsic p-type degeneracy of BiCuSeO, capable of maintaining even in a few layers, is comprehensively unveiled. By varying the thicknesses and temperatures, the carrier concentration of BiCuSeO nanosheets can be adjusted in the range of 10¹⁹ to 10²¹ cm^-3 , and the Hall mobility of BiCuSeO is ≈191 cm² V^-1 s^-1 (at 2 K). Furthermore, taking advantage of the p-type degeneracy of BiCuSeO, a prototypical BiCuSeO/MoS₂ TFET is fabricated. The emergence of the negative differential resistance trend and multifunctional diodes by modulating the gate voltage and temperature reveal the great practical implementation potential of BiCuSeO nanosheets. These results pave way for the CVD synthesis of multinary 2D materials and rational design of high-performance tunnel devices.

Iridium-Incorporated Strontium Tungsten Oxynitride Perovskite for Efficient Acidic Hydrogen Evolution

Heteroanionic materials exhibit great structural diversity with adjustable electronic, magnetic, and optical properties that provide immense opportunities for materials design. Within this material family, perovskite oxynitrides incorporate earth-abundant nitrogen with differing size, electronegativity, and charge into oxide, enabling a unique approach to tuning metal-anion covalency and energy of metal cation electronic states, thereby achieving functionality that may be inaccessible from their perovskite oxide counterparts, which have been widely studied as electrocatalysts. However, it is very challenging to directly obtain such materials due to the poor thermal stability of late transition metals coordinated with N and/or at high valence states. Herein, we introduce an effective strategy to prepare a perovskite oxynitride with a small fraction of sites substituted with Ir and adopt it as the first electrocatalyst in this material family, thereby enabling high activity and efficient utilization of precious metal content. From a series of characterization techniques, including X-ray absorption spectroscopy, atomic resolution electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, we prove the successful incorporation of Ir into a strontium tungsten oxynitride perovskite structure and discover the formation of a unique Ir-N/O coordination structure. Benefitting from this, the material exhibits a high activity toward the hydrogen evolution reaction, which exhibits an ultralow overpotential of only 8 mV to reach 10 mA/cm²_geo in 0.5 M H₂SO₄ and 4.5-fold enhanced mass activity compared to commercial Pt/C. This work opens a new avenue for oxynitride material synthesis as well as pursuit of a new class of high-performance electrocatalysts.

Cubic Stuffed-Diamond Semiconductors LiCu3TiQ4 (Q = S, Se, and Te)

Lithium chalcogenides have been understudied, owing to the difficulty in managing the chemical reactivity of lithium. These materials are of interest as potential ion conductors and thermal neutron detectors. In this study, we describe three new cubic lithium copper chalcotitanates that crystallize in the P4̅3m space group. LiCu₃TiS₄, a = 5.5064(6) Å, and LiCu₃TiSe₄, a = 5.7122(7) Å, represent two members of a new stuffed diamond-type crystal structure, while LiCu₃TiTe₄, a = 5.9830(7) Å crystallized into a similar structure exhibiting lithium and copper mixed occupancy. These structures can be understood as hybrids of the zinc-blende and sulvanite structure types. In situ powder X-ray diffraction was utilized to construct a "panoramic" reaction map for the preparation of LiCu₃TiTe₄, facilitating the design of a rational synthesis and uncovering three new transient phases. LiCu₃TiS₄ and LiCu₃TiSe₄ are thermally stable up to 1000 °C under vacuum, while LiCu₃TiTe₄ partially decomposes when slowly cooled to 400 °C. Density functional theory calculations suggest that these compounds are indirect band gap semiconductors. The measured work functions are 4.77(5), 4.56(5), and 4.69(5) eV, and the measured band gaps are 2.23(5), 1.86(5), and 1.34(5) eV for the S, Se, and Te analogues, respectively.

Relative Kinetics of Solid-State Reactions: The Role of Architecture in Controlling Reactivity

Countless inorganic materials are prepared via high temperature solid-state reaction of mixtures of reagents powders. Understanding and controlling the phenomena that limit these solid-state reactions is crucial to designing reactions for new materials synthesis. Here, focusing on topotactic ion-exchange between NaFeO₂ and LiBr as a model reaction, we manipulate the mesoscale reaction architecture and transport pathways by changing the packing and interfacial contact between reagent particles. Through analysis of in situ synchrotron X-ray diffraction data, we identify multiple kinetic regimes that reflect transport limitations on different length scales: a fast kinetic regime in the first minutes of the reaction and a slow kinetic regime that follows. The fast kinetic regime dominates the observed reaction progress and depends on the reagent packing; this challenges the view that solid-state reactions are necessarily slow. Using a phase-field model, we simulated the reaction process and showed that particles without direct contact to the other reactant phases experience large reduction in the reaction rate, even when transport hindrance at particle-particle contacts is not considered.

Low Thermal Conductivity in Heteroanionic Materials with Layers of Homoleptic Polyhedra

Although BiAgOSe, an analogue of a well-studied thermoelectric material BiCuOSe, is thermodynamically stable, its synthesis is complicated by the low driving force of formation from the stable binary and ternary intermediates. Here we have developed a "subtraction strategy" to suppress byproducts and produce pure phase BiAgOSe using hydrothermal methods. Electronic structure calculations and optical characterization show that BiAgOSe is an indirect bandgap semiconductor with a bandgap of 0.95 eV. The prepared sample exhibits lower lattice thermal conductivities (0.61 W·m^-1·K^-1 at room temperature and 0.35 W·m^-1·K^-1 at 650 K) than BiCuOSe. Lattice dynamical simulations and variable temperature diffraction measurements demonstrate that the low lattice thermal conductivity arises from both the low sound velocity and high phonon-phonon scattering rates in BiAgOSe. These in turn result primarily from the soft Ag-Se bonds in the edge-sharing AgSe₄ tetrahedra and large sublattice mismatch between the quasi-two-dimensional [Bi₂O₂]²⁺ and [Ag₂Se₂]^2- layers. These results highlight the advantages of manipulating the chemistry of homoleptic polyhedra in heteroanionic compounds for electronic structure and phonon transport control.