Effect of Strong Intermolecular Interaction in 2D Inorganic Molecular Crystals

Dielectric Integrations and Advanced Interface Engineering for 2D Field-Effect Transistors

As silicon-based transistors approach their physical limits, the challenge of further increasing chip integration intensifies. 2D semiconductors, with their atomically thin thickness, ultraflat surfaces, and van der Waals (vdW) integration capability, are seen as a key candidate for sub-1 nm nodes in the post-Moore era. However, the low dielectric integration quality, including discontinuity and substantial leakage currents due to the lack of nucleation sites during deposition, interfacial states causing serious charge scattering, uncontrolled threshold shifts, and bad uniformity from dielectric doping and damage, have become critical barriers to their real applications. This review focuses on this challenge and the possible solutions. The functions of dielectric materials in transistors and their criteria for 2D devices are first elucidated. The methods for high-quality dielectric integration with 2D channels, such as surface pretreatment, using 2D materials with native oxides, buffer layer insertion, vdW dielectric transfer, and new dielectric materials, are then reviewed. Additionally, the dielectric integration for advanced 3D integration of 2D materials is also discussed. Finally, this paper is concluded with a comparative summary and outlook, highlighting the importance of interfacial state control, dielectric integration for 2D p-type channels, and compatibility with silicon processes.

High-pressure chemistry of functional materials

Functional materials, possessing specific properties and performing particular functions beyond their mechanical or structural roles, are the foundation of modern matter science including energy, environment, and quantum sciences. The atomic and electronic structures of these materials can be significantly altered by external stimuli such as pressure. High-pressure techniques have been extensively utilized to deepen our understanding of structure-property relationships of materials, while also enabling emergent or enhanced properties. In this feature article, we review the transformative impact of high pressure on the chemical and physical properties of functional materials, including perovskite materials, low-dimensional metal halides, metal chalcogenides, metal oxides, and inorganic molecular crystals. By analyzing recent advancements and methodological approaches in high-pressure research, we provide insights into the mechanisms driving structural and property changes in these materials. We also emphasize the significance of translating the knowledge gained from high pressure research to the design of new functional materials. Finally, we highlight the potential of high-pressure chemistry and nano-architectonics in advancing functional materials and discuss the future directions and challenges in this field.

Hypervalent Iodine(III) Mediated Halogen Bonded Supramolecular Chiral System with Cholesteryl Naphthalimides

Halogen bonding acknowledged as a noteworthy weak interaction, has gained growing recognition in the field of supramolecular chemistry. In this study, we selected structurally rigid diaryliodonium ions (I(III)) with two biaxial σ-holes as halogen-bond donors, to bind with three chiral acceptor molecules bearing cholesteryl and naphthalimides with distinct geometries. The abundant carbonyl oxygen atoms in side-arm substituents function as multiple acceptors for halogen bonding. The self-aggregation of chiral acceptor molecules demonstrates adaptiveness to solvent media, evidenced by the inversion of the Cotton effect and the morphological evolution from spherical to rod-like nanoarchitectures in different solvent systems. The distinct geometries of the acceptor molecules conferred various binding modes with I(III). The introduction of I(III) as a halogen-bond donor regulates the aggregation of the donors, achieving amplification of chiroptical signals and inheriting solvent responsiveness from the self-aggregated assembly. This study successfully utilized rational structural design and multimodal control strategies to achieve regulation of supramolecular chirality.

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.

Giant Tunability of Charge Transport in 2D Inorganic Molecular Crystals by Pressure Engineering

The unique intermolecular van der Waals force in emerging two-dimensional inorganic molecular crystals (2DIMCs) endows them with highly tunable structures and properties upon applying external stimuli. Using high pressure to modulate the intermolecular bonding, here we reveal the highly tunable charge transport behavior in 2DIMCs for the first time, from an insulator to a semiconductor. As pressure increases, 2D α-Sb₂ O₃ molecular crystal undergoes three isostructural transitions, and the intermolecular bonding enhances gradually, which results in a considerably decreased band gap by 25 % and a greatly enhanced charge transport. Impressively, the in situ resistivity measurement of the α-Sb₂ O₃ flake shows a sharp drop by 5 orders of magnitude in 0-3.2 GPa. This work sheds new light on the manipulation of charge transport in 2DIMCs and is of great significance for promoting the fundamental understanding and potential applications of 2DIMCs in advanced modern technologies.

Emerging Two-Dimensional Inorganic Molecular Crystals: The Concept and Beyond

The concept of two-dimensional (2D) inorganic molecular crystals (IMCs) was first introduced by Zhai and coauthors in 2019. In contrast to the layered structures of graphene-like 2D materials, 2D IMCs consist of tiny inorganic molecules bonded together through all-around van der Waals (vdW) interactions. Their structural peculiarities lead to some special behaviors and appealing properties in their synthesis and applications. In this Perspective, we first introduce the concept of 2D IMCs and present the very first synthesis of 2D IMCs using a surface-passivated growth approach. The special intermolecular effects between the inorganic molecules are also summarized. In addition, because of its molecular structure, a vdW film of IMCs can be facilely fabricated, which exhibits appealing potential in integrated 2D devices. More importantly, we give a general outlook for the further development of 2D IMCs with the goal of attracting more attention to this emerging research frontier.

Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals

Encapsulation is critical for devices to guarantee their stability and reliability. It becomes an even more essential requirement for devices based on 2D materials with atomic thinness and far inferior stability compared to their bulk counterparts. Here a general van der Waals (vdW) encapsulation method for 2D materials using Sb₂ O₃ layer of inorganic molecular crystal fabricated via thermal evaporation deposition is reported. It is demonstrated that such a scalable encapsulation method not only maintains the intrinsic properties of typical air-susceptible 2D materials due to their vdW interactions but also remarkably improves their environmental stability. Specifically, the encapsulated black phosphorus (BP) exhibits greatly enhanced structural stability of over 80 days and more sustaining-electrical properties of 19 days, while the bare BP undergoes degradation within hours. Moreover, the encapsulation layer can be facilely removed by sublimation in vacuum without damaging the underlying materials. This scalable encapsulation method shows a promising pathway to effectively enhance the environmental stability of 2D materials, which may further boost their practical application in novel (opto)electronic devices.