Synthesis, Internal Structure, and Formation Mechanism of Monodisperse Tin Sulfide Nanoplatelets

Self-powered SnSx/TiO2 photodetectors (PDs) with dual-band binary response and the applications in imaging and light-encrypted logic gates

In this work, we report the design and fabrication of self-powered binary response PDs based on II-type heterostructures consisting of SnSx nanoflakes (NFs) and rutile TiO2 nanorod arrays (NRs). The TiO2 NRs effectively block light with wavelengths below 400 nm from reaching SnSx. Under 385 nm light, the photoelectrons in TiO2 recombine with holes in SnSx at the interface due to the energy band bending, resulting in a positive photocurrent. Under 410 nm light, the photoelectrons in SnSx and the photogenerated holes in TiO2 accumulate at the interface, overcoming the interfacial potential barriers induced by the higher Fermi levels of SnSx and inducing a negative photocurrent. Based on the bipolar response, the dual-band imaging capability without external filters and the light-encrypted OR, AND, and NOT logic gates using a single device are demonstrated. This work provides a blueprint for the development of multifunctional self-powered PDs that can simplify system architecture, reduce the energy consumption, and improve accuracy for applications, such as visual systems, light-controlled logic circuits, and encrypted optical communications.

Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications

Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.

A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS)

Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein.

High-Performance Phase-Pure SnS Photocathodes for Photoelectrochemical Water Splitting Obtained via Molecular Ink-Derived Seed-Assisted Growth of Nanoplates

Although tin monosulfide (SnS) is one of the promising earth-abundant semiconducting materials for photoelectrochemical water splitting, the performance of SnS photocathodes remains poor. Herein, we report a stepwise approach for the fabrication of highly efficient photocathodes based on SnS nanoplates via elaborate modulation of molecular solutions. It is demonstrated that phase-pure SnS nanoplates without detrimental secondary phases (such as SnS₂ and Sn₂S₃) can be readily obtained by adjusting the amounts of Sn and S in the precursor solution. Additionally, the orientation of SnS nanoplates is controlled by implementing different types of SnS seed layers. The orientations of the SnS seed layers are changed according to the molecular shapes of the Sn-S bonds in the molecular solutions, depending on the relative nucleophilicity of the molecular moieties formed by specific thiol-amine reactions. The molecular Sn-S sheets in the seed ink was obtained by the reaction in a solvent mixture of thiogylcolic acid and ethanolamine. By contrast, the short Sn-S molecular rods result from the reaction in a solvent mixture of 2-mercaptoethanol and ethylenediamine. Interestingly, the relatively short rodlike morphology of the SnS seed induces the growth of SnS nanostructures faceted by preferred (111) and (101) planes, leading to fast charge transport. With the formation of a proper band alignment with n-type CdS and TiO₂, the preferred (111)- and (101)-oriented SnS nanoplate-based photocathode exhibited a photocurrent density of -19 mA cm^-2 at 0 V versus a reversible hydrogen electrode, establishing a new benchmark for SnS photocathodes.

Facile synthesis and enhanced photocatalytic activity of Ag–SnS nanocomposites

The enhanced photocatatlytic properties of Ag–SnS nanocomposites are considered to be due to the synergistic effect of high surface area, broad range of photon absorption and efficient charge separation.

Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications

Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic properties, have received considerable attention. The 2D group IV-IV monochalcogenides (i.e. GeS, GeSe, SnS and SnSe) like black phosphorous possess puckered layered orthorhombic structure. The 2D group IV-IV monochalcogenides with advantages of earth-abundance, less toxicity, environmental compatibility and chemical stability, can be widely used in optoelectronics, piezoelectrics, photodetectors, sensors, Li-batteries and thermoelectrics. In this review, we summarized recent research progress in theory and experiment, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.

In-Plane Anisotropic Faceting of Ultralarge and Thin Single-Crystalline Colloidal SnS Nanosheets

The colloidal synthesis of large, thin two-dimensional (2D) nanosheets is fascinating but challenging, since the growth along the lateral and vertical dimensions needs to be controlled independently. In-plane anisotropy in 2D nanosheets is attracting more attention as well. We present a new synthesis for large colloidal single-crystalline SnS nanosheets with the thicknesses down to 7 nm and lateral sizes up to 8 μm. The synthesis uses trioctylphosphine-S (TOP-S) as sulfur source and oleic acid (with or without trioctylphosphine, TOP) as ligands. Upon adjusting the capping ligand amount, the growth direction can be switched between anisotropic directions (armchair and zigzag) and isotropic directions ("ladder" directions), leading to an edge-morphology anisotropy. This is the first report on solution-phase synthesis of large thin tin(II) sulfide (SnS) nanosheets (NSs) with tunable edge faceting. Furthermore, electronic transport measurements show strong dependency on the crystallographic directions confirming structural anisotropy.

Effect of Temperature and Capping Agents on Structural and Optical Properties of Tin Sulphide Nanocrystals

SnS nanocrystals were synthesized using bis(phenylpiperazine dithiocarbamate)tin(II) in oleic acid (OA) and octadecylamine (ODA) at three different temperatures (150, 190, and 230°C). XRD diffraction pattern confirms that OASnS and ODASnS nanoparticles are in the orthorhombic phase and the type of capping agent used affects the crystallinity. Transmission electron microscopy (TEM) images shows spherically shaped nanocrystals for oleic acid capped SnS (OASnS) while octadecylamine (ODASnS) are cubic. Monodispersed SnS of size range 10.67–17.74 nm was obtained at 150°C for OASnS while the biggest-sized nanocrystals were obtained at 230°C for ODASnS. Temperature and capping agents tuned the crystallite sizes and shapes of the as-prepared nanocrystals. Electron dispersive X-ray spectroscopy indicates the formation of tin sulphide with the presence of Sn and S peaks in the nanocrystals. Flowery and agglomerated spherical-like morphology were observed for ODASnS and OASnS nanocrystals, respectively, using a SEM (scanning electron microscope). Direct electronic band gaps of the synthesized SnS nanocrystals are 1.71–1.95 eV and 1.93–2.81 eV for OASnS and ODASnS nanocrystals, respectively.

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

Six different thin film solar cells consisting of either orthorhombic (α-SnS) or cubic (π-SnS) tin(ii) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either π-SnS or α-SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. α-SnS and π-SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiO_x layer (am-TiO_x-FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure α-SnS and π-SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm² were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the α-SnS polymorph was achieved with Mo (η = 0.82%) or FTO (η = 0.88%) as the back contacts, with respective open-circuit voltages (V_oc) of 0.135 and 0.144 V, and short-circuit current densities (J_sc) of 12.96 and 12.78 mA cm⁻². For the devices containing the π-SnS polymorph, the highest efficiencies were obtained with the am-TiO_x-FTO (η = 0.41%) back contact, with a V_oc of 0.135 V, and J_sc of 5.40 mA cm⁻². We show that mild post-fabrication hot plate annealing can improve the J_sc, but can in most cases compromise the V_oc. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements.

Polymorph selective deposition of α- and π-SnS enables their evaluation as thin film PV absorber layers in various device structures.

Nanoscale self-assembly of thermoelectric materials: a review of chemistry-based approaches

This review is concerned with the leading methods of bottom-up material preparation for thermal-to-electrical energy interconversion. The advantages, capabilities, and challenges from a material synthesis perspective are surveyed and the methods are discussed with respect to their potential for improvement (or possibly deterioration) of application-relevant transport properties. Solution chemistry-based synthesis approaches are re-assessed from the perspective of thermoelectric applications based on reported procedures for nanowire, quantum dot, mesoporous, hydro/solvothermal, and microwave-assisted syntheses as these techniques can effectively be exploited for industrial mass production. In terms of energy conversion efficiency, the benefit of self-assembly can occur from three paths: suppressing thermal conductivity, increasing thermopower, and boosting electrical conductivity. An ideal thermoelectric material gains from all three improvements simultaneously. Most bottom-up materials have been shown to exhibit very low values of thermal conductivity compared to their top-down (solid-state) counterparts, although the main challenge lies in improving their poor electrical properties. Recent developments in the field discussed in this review reveal that the traditional view of bottom-up thermoelectrics as inferior materials suffering from poor performance is not appropriate. Thermopower enhancement due to size and energy filtering effects, electrical conductivity enhancement, and thermal conductivity reduction mechanisms inherent in bottom-up nanoscale self-assembly syntheses are indicative of the impact that these techniques will play in future thermoelectric applications.

Contact and Noncontact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made toward the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it remains a substantial challenge to fully characterize the products' inherent electronic transport properties. This is often due to their irregular morphology or small dimensions, which demand the formation of colloidal assemblies or films as a prerequisite to performing electrical measurements. Here, we report the synthesis of nearly monodisperse 2D colloidal nanocrystals of semiconductor SnS and a thorough investigation of the intrinsic electronic transport properties of single crystals. We utilize a combination of multipoint contact probe measurements and ultrafast terahertz spectroscopy to determine the carrier concentration, carrier mobility, conductivity/resistivity, and majority carrier type of individual colloidal semiconductor nanocrystals. Employing this metrological approach, we compare the electronic properties extracted for distinct morphologies of 2D SnS and relate them to literature values. Our results indicate that the electronic transport of colloidal semiconductors may be tuned through prudent selection of the synthetic conditions. We find that these properties compare favorably to SnS grown using vapor deposition techniques, illustrating that colloidal solution synthesis is a promising route to scalable production of nanoscale 2D materials.

Controllable Colloidal Synthesis of Tin(II) Chalcogenide Nanocrystals and Their Solution-Processed Flexible Thermoelectric Thin Films

A systematic colloidal synthesis approach to prepare tin(II, IV) chalcogenide nanocrystals with controllable valence and morphology is reported, and the preparation of solution-processed nanostructured thermoelectric thin films from them is then demonstrated. Triangular SnS nanoplates with a recently-reported π-cubic structure, SnSe with various shapes (nanostars and both rectangular and hexagonal nanoplates), SnTe nanorods, and previously reported Sn(IV) chalcogenides, are obtained using different combinations of solvents and ligands with an Sn4+ precursor. These unique nanostructures and the lattice defects associated with their Sn-rich composition allow the production of flexible thin films with competitive thermoelectric performance, exhibiting room temperature Seebeck coefficients of 115, 81, and 153 μV K-1 for SnS, SnSe, and SnTe films, respectively. Interestingly, a p-type to n-type transition is observed in SnS and SnSe due to partial anion loss during post-synthesis annealing at 500 °C. A maximum figure of merit (ZT) value of 0.183 is achieved for an SnTe thin film at 500 K, exceeding ZT values from previous reports on SnTe at this temperature. Thus, a general strategy to prepare tin(II) chalcogenide nanocrystals is provided, and their potential for use in high-performance flexible thin film thermoelectric generators is demonstrated.

Towards Low-Toxic Colloidal Quantum Dots

Colloidal quantum dots (CQDs) are of enormous interest in the scientific and engineering fields. During the past few decades, significant efforts have been conducted in investigating Cd- and Pb-based CQDs, resulting in excellent photoluminescence (PL) properties and impressive performance in various applications. But the high toxicity of Cd and Pb elements pushed the scientific community to explore low-toxic CQDs excluding poisonous heavy metals. Several semiconductor materials with lower toxicity than Cd and Pb species have been proposed. This article presents a short overview of recent efforts involving low-toxic CQDs, focusing especially on IV–VI and III–V semiconductors which are active in the near- and short-wave-infrared (IR) regimes. Recent achievements pertinent to Sn- and In-based CQDs are highlighted as representative examples. Finally, limitations and future challenges are discussed in the review.

Topotactic anion-exchange in thermoelectric nanostructured layered tin chalcogenides with reduced selenium content

Topotactic solution synthesis yields nanostructured tin chalcogenides, SnS_1–xSe_x with controllable composition; spark plasma sintered SnS_0.1Se_0.9 achieves ZT ≈ 1.16 at 923 K via microstructural texture tuning.

Anion exchange has been performed with nanoplates of tin sulfide (SnS) via “soft chemical” organic-free solution syntheses to yield layered pseudo-ternary tin chalcogenides on a 10 g-scale. SnS undergoes a topotactic transformation to form a series of S-substituted tin selenide (SnSe) nano/micro-plates with tuneable chalcogenide composition. SnS_0.1Se_0.9 nanoplates were spark plasma sintered into phase-pure, textured, dense pellets, the ZT of which has been significantly enhanced to ≈1.16 from ≈0.74 at 923 K via microstructure texturing control. These approaches provide versatile, scalable and low-cost routes to p-type layered tin chalcogenides with controllable composition and competitive thermoelectric performance.

Controllable colloidal synthesis of anisotropic tin dichalcogenide nanocrystals for thin film thermoelectrics

Tin chalcogenides have shown promise in applications including energy storage, optoelectronics, photovoltaics, and thermoelectrics. Here, we present a colloidal synthesis strategy to produce tin dichalcogenide nanocrystals (NCs) with controllable stoichiometry, vacancies, shape, and crystal structure. Compared with previously reported methods, we use less expensive precursors, such as tin(iv) chloride and sulfur or selenium powder, to produce tin(iv) chalcogenide NCs. SnS₂ and SnSe₂ NCs with novel NC morphologies including SnS₂ nanoflowers/nanoflakes, SnSe₂ nanosheets with circular and hexagonal shapes, as well as mixtures of nanospheres and nanoflakes were prepared by varying the solvents and anion precursors. We were also able to reduce tin(iv) to tin(ii) to produce tin(ii) chalcogenide NCs. The corresponding thin films were prepared by spin-coating, followed by post-treatment to study their thermoelectric properties. Room temperature Seebeck coefficients of -150 μV K^-1 and -126 μV K^-1 were measured for SnS₂ and SnSe₂ films, demonstrating their promise as thin film thermoelectric materials.

Surface energies and nanocrystal stability in the orthorhombic and π-phases of tin and germanium monochalcogenides

Structures and energies of preferred surfaces of Sn and Ge monochalcogenides characterized and modelled.

Uncovering active precursors in colloidal quantum dot synthesis

Studies of the fundamental physics and chemistry of colloidal semiconductor nanocrystal quantum dots (QDs) have been central to the field for over 30 years. Although the photophysics of QDs has been intensely studied, much less is understood about the underlying chemical reaction mechanism leading to monomer formation and subsequent QD growth. Here we investigate the reaction mechanism behind CdSe QD synthesis, the most widely studied QD system. Remarkably, we find that it is not necessary for chemical precursors used in the most common synthetic methods to directly react to form QD monomers, but rather they can generate in situ the same highly reactive Cd and Se precursors that were used in some of the original II-VI QD syntheses decades ago, i.e., hydrogen chalcogenide gas and alkyl cadmium. Appreciating this surprising finding may allow for directed manipulation of these reactive intermediates, leading to more controlled syntheses with improved reproducibility.

Little is understood about the chemical evolution of precursors to quantum dots. Here, the authors find that under the high temperature conditions typical of CdSe quantum dot synthesis, precursors decompose into highly reactive species in a critical first step before forming monomers and finally nanocrystals.

Unraveling the Formation Mechanism of Dendritic Fibrous Nanosilica

We studied the formation mechanism of dendritic fibrous nanosilica (DFNS) that involves several intriguing dynamical steps. Through electron microscopy and real-time small-angle X-ray scattering studies, it has been demonstrated that the structural evolution of bicontinuous microemulsion droplets (BMDs) and their subsequent coalescence, yielding nanoreactor template, is responsible for to the formation of complex DFNS morphology. The role of cosurfactant has been found to be quite crucial, which allowed the understanding of this intricate mechanism involving the complex interplay of self-assembly, dynamics of BMDs formation, and coalescence. The role of BMDs in formation of DFNS has not been reported so far and the present work allows a deeper molecular-level understanding of DFNS formation.

Highly Sensitive Flexible Photodetectors Based on Self-Assembled Tin Monosulfide Nanoflakes with Graphene Electrodes

Tin monosulfide (SnS) nanostructures have attracted huge attention recently because of their high absorption coefficient, high photoconversion efficiencies, low energy cost, ease of deposition, and so on. Here, in this paper, we report on the low-cost hydrothermal synthesis of the self-assembled SnS nanoflake-like structures in terms of performance for the photodetectors. High-performance photodetectors were fabricated using SnS nanoflakes as active layers and graphene as the lateral electrodes. The SnS photodetectors exhibited excellent photoresponse properties with a high responsivity of 1.7 × 10⁴ A/W and have fast response and recovery times. In addition, the photodetectors exhibited long-term stability and strong dependence of photocurrent on light intensity. These excellent characteristics were attributed to the larger surface-to-volume ratio of the self-assembled SnS nanoflakes and the effective separation of the photogenerated carriers at graphene/SnS interfaces. Additionally, a flexible photodetector based on SnS nanoflakes was also fabricated on a flexible substrate that demonstrated similar photosensitive properties. Furthermore, this study also demonstrates the potential of hydrothermal-processed SnS nanoflakes for high-performance photodetectors and their application in flexible low-cost optoelectronic devices.

3D Porous Nanoarchitectures Derived from SnS/S-Doped Graphene Hybrid Nanosheets for Flexible All-Solid-State Supercapacitors

3D porous nanoarchitectures derived from SnS/S-doped graphene hybrid nanosheets are successfully prepared by controllable thermal conversion of oleylamine-capped mixed-phase SnS₂ -SnS nanodisks precursors, and employed as electroactive material to fabricate flexible, symmetric, all-solid-state supercapacitors. The fabricated solid devices exhibit very high areal specific capacitance (2.98 mF cm^-2 ), good cycling stability (99% for 10 000 cycles), excellent flexibility, and desirable mechanical stability.

Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses

Anisotropic layered semiconductors have attracted significant interest due to the huge possibility of bringing new functionalities to thermoelectric, electronic and optoelectronic devices. Currently, most reports on anisotropy have concentrated on black phosphorus and ReS2, less effort has been contributed to other layered materials. In this work, two-dimensional (2D) orthorhombic SnS flakes on a large scale have been successfully synthesized via a simple physical vapor deposition method. Angle-dependent Raman spectroscopy indicated that the orthorhombic SnS flakes possess a strong anisotropic Raman response. Under a parallel-polarization configuration, the peak intensity of Ag (190.7 cm(-1)) Raman mode reaches the maximum when incident light polarization is parallel to the armchair direction of the 2D SnS flakes, which strongly suggests that the Ag (190.7 cm(-1)) mode can be used to determine the crystallographic orientation of the 2D SnS. In addition, temperature-dependent Raman characterization confirmed that the 2D SnS flakes have a higher sensitivity to temperature than graphene, MoS2 and black phosphorus. These results are useful for the future studies of the optical and thermal properties of 2D orthorhombic SnS.

Rapid and facile synthesis of high-quality, oleate-capped PbS nanocrystals

A convenient method for the synthesis of high quality PbS nanocrystals is studied and reported.

Synthesis of surfactant-free SnS nanoplates in an aqueous solution

A synthetic route to produce surfactant-free SnS nanoplates with the Pbnm crystal structure is suggested. The process is quick and environmentally-friendly, accomplished under mild aqueous conditions by chemical transformation.