1
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Chen J, Xu J, Kong L, Shi S, Xu J, Gao S, Zhang X, Li L. Self-powered SnS x/TiO 2 photodetectors (PDs) with dual-band binary response and the applications in imaging and light-encrypted logic gates. J Colloid Interface Sci 2024; 663:336-344. [PMID: 38412719 DOI: 10.1016/j.jcis.2024.02.154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 01/26/2024] [Accepted: 02/19/2024] [Indexed: 02/29/2024]
Abstract
In this work, we report the design and fabrication of self-powered binary response PDs based on II-type heterostructures consisting of SnSx nanoflakes (NFs) and rutile TiO2 nanorod arrays (NRs). The TiO2 NRs effectively block light with wavelengths below 400 nm from reaching SnSx. Under 385 nm light, the photoelectrons in TiO2 recombine with holes in SnSx at the interface due to the energy band bending, resulting in a positive photocurrent. Under 410 nm light, the photoelectrons in SnSx and the photogenerated holes in TiO2 accumulate at the interface, overcoming the interfacial potential barriers induced by the higher Fermi levels of SnSx and inducing a negative photocurrent. Based on the bipolar response, the dual-band imaging capability without external filters and the light-encrypted OR, AND, and NOT logic gates using a single device are demonstrated. This work provides a blueprint for the development of multifunctional self-powered PDs that can simplify system architecture, reduce the energy consumption, and improve accuracy for applications, such as visual systems, light-controlled logic circuits, and encrypted optical communications.
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Affiliation(s)
- Jing Chen
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Jianping Xu
- Tianjin Key Laboratory of Quantum Optics and Intelligent Photonics, School of Science, Tianjin University of Technology, Tianjin 300384, China.
| | - Lina Kong
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.
| | - Shaobo Shi
- School of Science, Tianjin University of Technology and Education, Tianjin 300222, China
| | - Jianghua Xu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Songyao Gao
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China; Tianjin Key Laboratory of Quantum Optics and Intelligent Photonics, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Xiaosong Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Lan Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
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2
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Modi KH, Pataniya PM, Sumesh CK. 2D Monolayer Catalysts: Towards Efficient Water Splitting and Green Hydrogen Production. Chemistry 2024; 30:e202303978. [PMID: 38299695 DOI: 10.1002/chem.202303978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 01/28/2024] [Accepted: 01/29/2024] [Indexed: 02/02/2024]
Abstract
A viable alternative to non-renewable hydrocarbon fuels is hydrogen gas, created using a safe, environmentally friendly process like water splitting. An important role in water-splitting applications is played by the development of two-dimensional (2D) layered transition metal chalcogenides (TMDCs), transition metal carbides (MXenes), graphene-derived 2D layered nanomaterials, phosphorene, and hexagonal boron nitride. Advanced synthesis methods and characterization instruments enabled an effective application for improved electrocatalytic water splitting and sustainable hydrogen production. Enhancing active sites, modifying the phase and electronic structure, adding conductive elements like transition metals, forming heterostructures, altering the defect state, etc., can improve the catalytic activity of 2D stacked hybrid monolayer nanomaterials. The majority of global research and development is focused on finding safer substitutes for petrochemical fuels, and this review summarizes recent advancements in the field of 2D monolayer nanomaterials in water splitting for industrial-scale green hydrogen production and fuel cell applications.
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Affiliation(s)
- Krishna H Modi
- Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, 388421, Changa, Gujarat, India
| | - Pratik M Pataniya
- Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, 388421, Changa, Gujarat, India
| | - C K Sumesh
- Department of Physical Sciences, P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, 388421, Changa, Gujarat, India
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3
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Al-Basheer W, Viernes C, Cheng M, Zheng R, Netzke S, Pichugin K, Sciaini G. Determining the Out-of-Plane Longitudinal Sound Speed in GeS by Broadband Time-Domain Brillouin Scattering. ACS Omega 2024; 9:15463-15467. [PMID: 38585054 PMCID: PMC10993360 DOI: 10.1021/acsomega.4c00266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 02/04/2024] [Accepted: 02/28/2024] [Indexed: 04/09/2024]
Abstract
Over the past decade, two-dimensional (2D) layered semiconducting materials, with their distinctive structures and unique physicochemical properties, have attracted attention for potential applications in photonics and optoelectronics. In this study, we utilized time-domain broadband Brillouin scattering on a single germanium monosulfide (GeS) crystal to determine the out-of-plane longitudinal sound speed, evaluated at vL = (4035 ± 200) m/s. The reported results demonstrate the effectiveness of this nondestructive, all-optical technique for measuring the elastic properties in fragile 2D layered materials and provide the value of the out-of-plane compressive elastic constant, C = (69 ± 7) GPa.
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Affiliation(s)
- Watheq Al-Basheer
- Department
of Physics, King Fahd University of Petroleum
& Minerals, Dhahran 31261, Saudi Arabia
- Interdisciplinary
Research Center of Membranes and Water Security, King Fahd University of Petroleum & Minerals, Dhahran 31261, Saudi Arabia
| | - Christian Viernes
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Meixin Cheng
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Ruofei Zheng
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Sam Netzke
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - Kostyantyn Pichugin
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
| | - German Sciaini
- The
Ultrafast Electron Imaging Lab, Department of Chemistry, and Waterloo
Institute for Nanotechnology, University
of Waterloo, Waterloo N2L 3G1, Canada
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4
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Wang M, Hu Y, Pu J, Zi Y, Huang W. Emerging Xene-Based Single-Atom Catalysts: Theory, Synthesis, and Catalytic Applications. Adv Mater 2024; 36:e2303492. [PMID: 37328779 DOI: 10.1002/adma.202303492] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Revised: 06/07/2023] [Indexed: 06/18/2023]
Abstract
In recent years, the emergence of novel 2D monoelemental materials (Xenes), e.g., graphdiyne, borophene, phosphorene, antimonene, bismuthene, and stanene, has exhibited unprecedented potentials for their versatile applications as well as addressing new discoveries in fundamental science. Owing to their unique physicochemical, optical, and electronic properties, emerging Xenes have been regarded as promising candidates in the community of single-atom catalysts (SACs) as single-atom active sites or support matrixes for significant improvement in intrinsic activity and selectivity. In order to comprehensively understand the relationships between the structure and property of Xene-based SACs, this review represents a comprehensive summary from theoretical predictions to experimental investigations. Firstly, theoretical calculations regarding both the anchoring of Xene-based single-atom active sites on versatile support matrixes and doping/substituting heteroatoms at Xene-based support matrixes are briefly summarized. Secondly, controlled synthesis and precise characterization are presented for Xene-based SACs. Finally, current challenges and future opportunities for the development of Xene-based SACs are highlighted.
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Affiliation(s)
- Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Yi Hu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Junmei Pu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - You Zi
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
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5
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Zheng B, Sun X, Zheng W, Zhu C, Ma C, Pan A, Li D, Li S. Vapor growth of V-doped MoS 2 monolayers with enhanced B-exciton emission and broad spectral response. Front Optoelectron 2023; 16:42. [PMID: 38060145 DOI: 10.1007/s12200-023-00097-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Accepted: 11/03/2023] [Indexed: 12/08/2023]
Abstract
Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS2) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS2 monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS2 monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS2, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS2 monolayers (with low doping concentration) were demonstrated. The V-doped MoS2 monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.
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Affiliation(s)
- Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Weihao Zheng
- College of Advanced Interdisciplinary Studies and Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, 410073, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China.
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6
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Kaur A, Goswami T, Babu KJ, Ghosh HN. Ultrafast Hole Migration at the p-n Heterojunction of One-Dimensional SnS Nanorods and Zero-Dimensional CdS Quantum Dots. J Phys Chem Lett 2023; 14:7483-7489. [PMID: 37579185 DOI: 10.1021/acs.jpclett.3c01395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
The p-n heterojunctions fabricated from one-dimensional (1D) p-type tin sulfide nanorods (SnS NRs) decorated with n-type zero-dimensional (0D) cadmium sulfide quantum dots (CdS QDs) have gained significant research attention in energy storage devices. Herein, we have successfully synthesized a 1D/0D SnS@CdS heterostructure (HS) using a hot injection method. Structural and morphological studies clearly suggest that CdS QDs are uniformly anchored on the surface of SnS NRs, resulting in intimate contact between two components. The photoluminescence (PL) study revealed the transfer of photoexcited holes from CdS QDs to SnS NRs, which was further confirmed by transient absorption (TA) studies. TA measurements demonstrate the hole transfer from the valence band of CdS QDs to SnS NRs and delocalization of electrons between the conduction band of SnS NRs and CdS QDs in SnS@CdS HS, resulting in efficient charge separation across the p-n heterojunction. These findings will open up a new paradigm for improving the efficiency of optoelectronic devices.
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Affiliation(s)
- Arshdeep Kaur
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306, India
| | - Tanmay Goswami
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306, India
| | | | - Hirendra N Ghosh
- Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India
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7
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Zhang X, Shi Y, Shi Z, Xia H, Ma M, Wang Y, Huang K, Wu Y, Gong Y, Fei H, He Y, Ye G. High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons. Nano Lett 2023; 23:7449-7455. [PMID: 37556377 DOI: 10.1021/acs.nanolett.3c01879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >103 and a field-effect mobility of ∼0.7 cm2 V-1 s-1. This work provides a unique way to achieve one-dimensional growth of SnS.
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Affiliation(s)
- Xinyu Zhang
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yuyang Shi
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Zude Shi
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hang Xia
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Mingyu Ma
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China
| | - Yiliu Wang
- College of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Kang Huang
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ye Wu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Huilong Fei
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yongmin He
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Gonglan Ye
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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8
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Chen H, Wang M, Huang W. Lead Monoxide Nanostructures for Nanophotonics: A Review. Nanomaterials (Basel) 2023; 13:1842. [PMID: 37368272 DOI: 10.3390/nano13121842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 06/05/2023] [Accepted: 06/07/2023] [Indexed: 06/28/2023]
Abstract
Black-phosphorus-analog lead monoxide (PbO), as a new emerging 2D material, has rapidly gained popularity in recent years due to its unique optical and electronic properties. Recently, both theoretical prediction and experimental confirmation have revealed that PbO exhibits excellent semiconductor properties, including a tunable bandgap, high carrier mobility, and excellent photoresponse performance, which is undoubtedly of great interest to explore its practical application in a variety of fields, especially in nanophotonics. In this minireview, we firstly summarize the synthesis of PbO nanostructures with different dimensionalities, then highlight the recent progress in the optoelectronics/photonics applications based on PbO nanostructures, and present some personal insights on the current challenges and future opportunities in this research area. It is anticipated that this minireview can pave the way to fundamental research on functional black-phosphorus-analog PbO-nanostructure-based devices to meet the growing demands for next-generation systems.
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Affiliation(s)
- Hongyan Chen
- Engineering Training Center, Nantong University, Nantong 226019, China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China
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9
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Zi Y, Hu Y, Pu J, Wang M, Huang W. Recent Progress in Interface Engineering of Nanostructures for Photoelectrochemical Energy Harvesting Applications. Small 2023; 19:e2208274. [PMID: 36776020 DOI: 10.1002/smll.202208274] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 01/19/2023] [Indexed: 05/11/2023]
Abstract
With rapid and continuous consumption of nonrenewable energy, solar energy can be utilized to meet the energy requirement and mitigate environmental issues in the future. To attain a sustainable society with an energy mix predominately dependent on solar energy, photoelectrochemical (PEC) device, in which semiconductor nanostructure-based photocatalysts play important roles, is considered to be one of the most promising candidates to realize the sufficient utilization of solar energy in a low-cost, green, and environmentally friendly manner. Interface engineering of semiconductor nanostructures has been qualified in the efficient improvement of PEC performances including three basic steps, i.e., light absorption, charge transfer/separation, and surface catalytic reaction. In this review, recently developed interface engineering of semiconductor nanostructures for direct and high-efficiency conversion of sunlight into available forms (e.g., chemical fuels and electric power) are summarized in terms of their atomic constitution and morphology, electronic structure and promising potential for PEC applications. Extensive efforts toward the development of high-performance PEC applications (e.g., PEC water splitting, PEC photodetection, PEC catalysis, PEC degradation and PEC biosensors) are also presented and appraised. Last but not least, a brief summary and personal insights on the challenges and future directions in the community of next-generation PEC devices are also provided.
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Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Yi Hu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Junmei Pu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
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10
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Sheng C, Bu Y, Li Y, Su L, Yu Y, Cao D, Zhou J, Chen X, Lu W, Shu H. Phase-Controllable Growth of Air-Stable SnS Nanostructures for High-Performance Photodetectors with Ultralow Dark Current. ACS Appl Mater Interfaces 2023. [PMID: 36888888 DOI: 10.1021/acsami.2c21958] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to β-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to β phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated β-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 μs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the β-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.
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Affiliation(s)
- Chuangwei Sheng
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
| | - Yonghao Bu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanyan Li
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
| | - Liqin Su
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
| | - Yue Yu
- College of Science, China Jiliang University, Hangzhou 310018, China
| | - Dan Cao
- College of Science, China Jiliang University, Hangzhou 310018, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haibo Shu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
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11
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Wang M, Huang W. Emerging Xene-Related Nanostructures for Versatile Applications. Nanomaterials (Basel) 2023; 13:517. [PMID: 36770478 PMCID: PMC9920832 DOI: 10.3390/nano13030517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Accepted: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Investigations into semiconductor nanomaterials from both an academic and industrial point of view are of great significance [...].
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12
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Zheng C, Yao Y, Rui X, Feng Y, Yang D, Pan H, Yu Y. Functional MXene-Based Materials for Next-Generation Rechargeable Batteries. Adv Mater 2022; 34:e2204988. [PMID: 35944190 DOI: 10.1002/adma.202204988] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Revised: 07/10/2022] [Indexed: 06/15/2023]
Abstract
MXenes are seen as an exceptional candidate to reshape the future of energy with their viable surface chemistry, ultrathin 2D structure, and excellent electronic conductivity. The extensive research efforts bring about rapid expansion of the MXene families with enriched functionalities, which significantly boost performance of the existing energy-storage devices. In this review, the strategies that are developed to functionalize the MXene-based materials, including tailoring their microstructure by ions/molecules/polymers-initiated interaction or self-assembly, surface/interface engineering with dopants or functional groups, constructing heterostructures from MXenes with various materials, and transforming them into a series of derivatives inheriting the merits of the MXene precursors are highlighted. Their applications in emerging battery technologies are demonstrated and discussed. With delicate functionalization and structural engineering, MXene-based electrode materials exhibit improved specific capacity and rate capability, and their presence further suppresses and even eliminates dendrite formation on the metal anodes, which lengthens the lifespan of the rechargeable batteries. Meanwhile, MXenes serve as additives for electrolytes, separators, and current collectors. Finally, some future directions worth of exploration to address the remaining challenging issues of MXene-based materials and achieve the next-generation high-power and low-cost rechargeable batteries are proposed.
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Affiliation(s)
- Chao Zheng
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
| | - Yu Yao
- Hefei National Research Center for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), National Synchrotron Radiation Laboratory, Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Xianhong Rui
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Yuezhan Feng
- Key Laboratory of Materials Processing and Mold (Ministry of Education), Zhengzhou University, Zhengzhou, 450002, China
| | - Dan Yang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Hongge Pan
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yan Yu
- Hefei National Research Center for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), National Synchrotron Radiation Laboratory, Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China
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13
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Ghaffari Sharaf M, Waduthanthri KD, Crichton A, Damji KF, Unsworth LD. Towards preventing exfoliation glaucoma by targeting and removing fibrillar aggregates associated with exfoliation syndrome. J Nanobiotechnology 2022; 20:459. [PMID: 36303134 DOI: 10.1186/s12951-022-01665-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Accepted: 10/02/2022] [Indexed: 11/10/2022] Open
Abstract
Exfoliation syndrome presents as an accumulation of insoluble fibrillar aggregates that commonly correlates with age and causes ocular complications, most notably open-angle glaucoma. Despite advances in understanding the pathogenesis and risk factors associated with exfoliation syndrome, there has been no significant progress in curative pharmacotherapy of this disease. It is thought that the ability to target the fibrillar aggregates associated with exfoliation may offer a new therapeutic approach, facilitating their direct removal from affected tissues. Phage display techniques yielded two peptides (LPSYNLHPHVPP, IPLLNPGSMQLS) that could differentiate between exfoliative and non-affected regions of the human lens capsule. These peptides were conjugated to magnetic particles using click chemistry to investigate their ability in targeting and removing exfoliation materials from the anterior human lens capsule. The behavior of the fibrillar materials upon binding to these magnetic particles was assessed using magnetic pins and rotating magnetic fields of various strengths. Ex vivo studies showed that the magnetic particle-peptide conjugates could generate enough mechanical force to remove large aggregates of exfoliation materials from the lens capsule when exposed to a low-frequency rotating magnetic field (5000 G, 20 Hz). Biocompatibility of targeting peptides with and without conjugated magnetic particles was confirmed using MTT cell toxicity assay, live/dead cell viability assay, and DNA fragmentation studies on primary cultured human trabecular meshwork cells. This is a novel, minimally invasive, therapeutic approach for the treatment of exfoliation glaucoma via the targeting and removal of exfoliation materials that could be applied to all tissues within the anterior segment of the eye.
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Affiliation(s)
- Mehdi Ghaffari Sharaf
- Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, Canada
| | - Kosala D Waduthanthri
- Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, Canada
| | - Andrew Crichton
- Department of Ophthalmology, University of Calgary, Calgary, Canada
| | - Karim F Damji
- Department of Ophthalmology and Visual Sciences, University of Alberta, Edmonton, AB, Canada
| | - Larry D Unsworth
- Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, Canada.
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Chen H, Wang M, Huang W. Two-Dimensional Selenium Nanosheet-Based Sponges with Superior Hydrophobicity and Excellent Photothermal Performance. Nanomaterials (Basel) 2022; 12:3756. [PMID: 36364530 PMCID: PMC9657928 DOI: 10.3390/nano12213756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Revised: 10/21/2022] [Accepted: 10/21/2022] [Indexed: 06/16/2023]
Abstract
Photothermally assisted superhydrophobic materials play an important role in a variety of applications, such as oil purification, waste oil collection, and solar desalination, due to their facile fabrication, low-cost, flexibility, and tunable thermal conversion. However, the current widely used superhydrophobic sponges with photothermal properties are usually impaired by a high loading content of photothermal agents (e.g., gold or silver nanoparticles, carbon nanotubes), low photothermal efficiency, and require harmful processes for modification. Here, a one-pot, simple composite consisting of two-dimensional (2D) selenium (Se) nanosheets (NSs) and commercially used melamine sponge (MS) is rationally designed and successfully fabricated by a facile dip-coating method via physical adsorption between 2D Se NSs and MS. The loading content of 2D Se NSs on the skeleton of the MS can be well controlled by dipping cycle. The results demonstrate that after the modification of 2D Se NSs on the MS, the wettability transition from hydrophilicity to hydrophobicity can be easily achieved, even at a very low loading of 2D Se NSs, and the highly stable photothermal conversion of the as-fabricated composites can be realized with a maximum temperature of 111 ± 3.2 °C due to the excellent photothermal effect of 2D Se NSs. It is anticipated that this composite will afford new design strategies for multifunctional porous structures for versatile applications, such as high-performance solar desalination and photothermal sterilization.
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Affiliation(s)
- Hongyan Chen
- Engineering Training Center, Nantong University, Nantong 226019, China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China
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15
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Zhu J, Chen H, Zi Y, Wang M, Huang W. Size-tunable bismuth quantum dots for self-powered photodetectors under ambient conditions. Nanotechnology 2022; 34:025202. [PMID: 36191561 DOI: 10.1088/1361-6528/ac96f9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
Although black phosphorus analogue, bismuthene, has been extensively investigated in recent years, yet the investigation into the photoelectronic devices is still in its infancy. In this contribution, uniform zero-dimensional (0D) bismuth (Bi) quantum dots (QDs) with different sizes were successfully synthesized by a simple solvothermal method. The as-synthesized 0D Bi QDs serve as working electrode materials by a direct deposition for photoelectrochemical (PEC)-type photodetection. The PEC results demonstrate that the as-fabricated 0D Bi QD-based electrode not only possess suitable self-powered broadband photoresponse, but also displays excellent photodetection performance. Under simulated light, the photocurrent density and photoresponsivity of the as-fabricated 0D Bi QD-based electrode can reach 2690 nA cm-2, and 22.0μA W-1, respectively. In addition, the as-prepared Bi QDs with the average diameter of 17 nm exhibit the best PEC photoresponse behavior in the studied size range of Bi QDs, mainly ascribed to the synergistic effect of suitable band gap and accessible active sites. It is anticipated that the uniform Bi QDs can be served as building blocks for a variety of photoelectronic devices, further expanding the application prospects of bismuthene, and can provide in-depth acknowledge on the performance optimization of monoelement Bi-based optical devices.
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Affiliation(s)
- Jun Zhu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, People's Republic of China
| | - Hongyan Chen
- Engineering Training Center, Nantong University, Nantong 226019, Jiangsu, People's Republic of China
| | - You Zi
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, People's Republic of China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, People's Republic of China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, People's Republic of China
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16
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Li W, Li H, Khan K, Liu X, Wang H, Lin Y, Zhang L, Tareen AK, Wageh S, Al-Ghamdi AA, Teng D, Zhang H, Shi Z. Infrared Light Emission Devices Based on Two-Dimensional Materials. Nanomaterials (Basel) 2022; 12:nano12172996. [PMID: 36080035 PMCID: PMC9457538 DOI: 10.3390/nano12172996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/28/2022] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.
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Affiliation(s)
- Wenyi Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Karim Khan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaosong Liu
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Wang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Yanping Lin
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Lishang Zhang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - S. Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed A. Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Daoxiang Teng
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
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Wang S, Yu M, Yu H, Cheng Y, Dou M, Gong X, Li Z, Shao H, Chen G, Li S, Chen Y. One‐Step Fabrication of CdS/Ag
2
S Heterojunction Composites and Its Enhanced Visible‐Light Photocatalytic Degradation Performance. Crystal Research and Technology 2022. [DOI: 10.1002/crat.202100291] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Affiliation(s)
- Shuang Wang
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Minghui Yu
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Hao Yu
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Yuye Cheng
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Minghao Dou
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Xiaoyu Gong
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Zhiqiang Li
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Hongyu Shao
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Guangyu Chen
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Shenjie Li
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
| | - Yanyan Chen
- School of Chemistry and Chemical Engineering Hefei University of Technology Hefei Anhui 230009 P. R. China
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