Synthesis of Nanoparticulate Alloys of the Composition Cu2Zn1–xFexSnS4: Structural, Optical, and Magnetic Properties

Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides

Nanodimensional metal sulfides are a developing class of low-cost materials with potential applications in areas as wide-ranging as energy storage, electrocatalysis, and imaging. An attractive synthetic strategy, which allows careful control over stoichiometry, is the single source precursor (SSP) approach in which well-defined molecular species containing preformed metal-sulfur bonds are heated to decomposition, either in the vapor or solution phase, resulting in facile loss of organics and formation of nanodimensional metal sulfides. By careful control of the precursor, the decomposition environment and addition of surfactants, this approach affords a range of nanocrystalline materials from a library of precursors. Dithiocarbamates (DTCs) are monoanionic chelating ligands that have been known for over a century and find applications in agriculture, medicine, and materials science. They are easily prepared from nontoxic secondary and primary amines and form stable complexes with all elements. Since pioneering work in the late 1980s, the use of DTC complexes as SSPs to a wide range of binary, ternary, and multinary sulfides has been extensively documented. This review maps these developments, from the formation of thin films, often comprised of embedded nanocrystals, to quantum dots coated with organic ligands or shelled by other metal sulfides that show high photoluminescence quantum yields, and a range of other nanomaterials in which both the phase and morphology of the nanocrystals can be engineered, allowing fine-tuning of technologically important physical properties, thus opening up a myriad of potential applications.

Growth and Characterization of Cu2Zn1-xFexSnS4 Thin Films for Photovoltaic Applications

Photovoltaics is a promising technology to produce sustainable energy, thanks to the high amount of energy emitted by the sun. One way of having solar cells with low production costs is to apply thin-film technology and with earth-abundant raw materials. A keen interest is arising in kesterite compounds, which are chalcogenides composed of abundant and non-toxic elements. They have already achieved excellent performance at the laboratory level. Here, we report the synthesis and characterization of mixed chalcogenides based on copper, zinc, iron, and tin. Solutions have been studied with different zinc and iron ratios. The distortion of the elementary cell of kesterite increases with the addition of iron until a phase transition to stannite occurs. The process of synthesis and deposition proposed herein is cheap and straightforward, based on the sol-gel technique. These thin films are particularly attractive for use in cheap and easily processable solar cells. The synthesized layers have been characterized by X-ray diffraction, UV-Vis absorption, and Raman, X-ray photoelectron, and energy-dispersive X-ray spectroscopy measurements.

Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1-xSnS4 Thin Films for Solar Cells

Cu2MgxZn1-xSnS4 (0 ≤ x ≤0.6) thin films were prepared by a simple, low-temperature (300 °C) and low-cost sol-gel spin coating method followed by post-annealing at optimum conditions. We optimized the annealing conditions and investigated the effect of Mg content on the crystalline quality, electrical and optical performances of the Cu2MgxZn1-xSnS4 thin films. It was found that the Cu2MgxZn1-xSnS4 film annealed at 580 °C for 60 min contained large grain, less grain boundaries and high carrier concentration. Pure phase kesterite Cu2MgxZn1-xSnS4 (0 ≤ x ≤ 0.6) thin films were obtained by using optimal annealing conditions; notably, the smaller Zn2+ ions in the Cu2ZnSnS4 lattice were replaced by larger Mg2+ ions. With an increase in x from 0 to 0.6, the band gap energy of the films decreased from 1.43 to 1.29 eV. When the ratio of Mg/Mg + Zn is 0.2 (x = 0.2), the grain size of Cu2MgxZn1-xSnS4 reaches a maximum value of 1.5 μm and the surface morphology is smooth and dense. Simultaneously, the electrical performance of Cu2MgxZn1-xSnS4 thin film is optimized at x = 0.2, the carrier concentration reaches a maximum value of 3.29 × 1018 cm-3.

The synthesis and characterization of Cu2ZnSnS4 thin films from melt reactions using xanthate precursors

Kesterite, Cu₂ZnSnS₄ (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu₂ZnSnS₄ (CZTS) thin films. The phase of the as-produced CZTS is dependent on decomposition temperature. X-ray diffraction patterns and Raman spectra show that films annealed between 375 and 475 °C are tetragonal, while at temperatures <375 °C hexagonal material was obtained. The electrical parameters of the CZTS films have also been determined. The conduction of all films was p-type, while the other parameters differ for the hexagonal and tetragonal materials: resistivity (27.1 vs 1.23 Ω cm), carrier concentration (2.65 × 10⁺¹⁵ vs 4.55 × 10⁺¹⁷ cm^-3) and mobility (87.1 vs 11.1 cm² V^-1 s^-1). The Hall coefficients were 2.36 × 10³ versus 13.7 cm³ C^-1.