Internal Electric Field Modulation in Molecular Electronic Devices by Atmosphere and Mobile Ions

Electrochemically grafted molecular layers as on-chip energy storage molecular junctions

Molecular junctions (MJs) are celebrated nanoelectronic devices for mimicking conventional electronic functions, including rectifiers, sensors, wires, switches, transistors, negative differential resistance, and memory, following an understanding of charge transport mechanisms. However, capacitive nanoscale molecular junctions are rarely seen. The present work describes electrochemically (E-Chem) grown covalently attached molecular thin films of 10, 14.3, and 18.6 nm thickness using benzimidazole (BENZ) diazonium salts on ITO electrodes on a quartz substrate upon which 50 nm of aluminum (Al) top contact was deposited to fabricate large-scale (area = 500 × 500 μm2) molecular junctions. The capacitance of the molecular junctions decreases with increasing thickness of molecular layers, a behavior attributed to a classical dielectric role in which the geometric capacitance of the device within a uniform dielectric component is expected to decrease with increasing thickness. An electrical dipole moment in BENZ oligomers enhances polarizability; hence, the dielectric constant of the medium leads to an increase in the capacitance of MJs, which reaches a maximum value of ∼53 μF cm-2 for a junction of 10 nm molecular film thickness. In addition to direct-current (DC) electrical measurements, and computational studies, we performed alternating current (AC)-based electrical measurements to understand the frequency response of molecular junctions. Our present study demonstrates that BENZ-based molecular junctions behave as classical organic capacitors and could be a suitable building block for nanoscale on-chip energy storage devices.

Electrosynthesis of Ru (II)-Polypyridyl Oligomeric Films on ITO Electrode for Two Terminal Non-Volatile Memory Devices and Neuromorphic Computing

Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 × 0.7 cm2) two terminal molecular junctions. The molecular junctions exhibit non-volatile resistive switching at a relatively lower operational voltage, ±1 V, high ON/OFF electrical current ratio (≈103), low-energy consumption (SET/RESET = 27.94/14400 nJ), good cyclic stability (>300 cycles), and switching speed (SET/RESET = 25 ms/20 ms). A computational study suggests that accessible frontier molecular orbitals of metal-complex to the Fermi level of ITO electrodes facilitate charge transport at a relatively lower bias followed by a filamentformation. An extensive analysis is performed of the performance of binary neural networks exploiting the current-voltage features of the devices as binary synaptic weights and exploring their potential for neuromorphic logic-in-memory implementation of IMPLICATION (IMPLY) operation which can realize universal gates. The comprehensive analysis indicates that the proposed redox-active complex-based memory device may be a promising candidate for high-density data storage, energy-efficient implementation of neuromorphic networks with software-level accuracy, and logic-in-memory implementations.

Utilization of Electric Fields to Modulate Molecular Activities on the Nanoscale: From Physical Properties to Chemical Reactions

As a primary energy source, electricity drives broad fields from everyday electronic circuits to industrial chemical catalysis. From a chemistry viewpoint, studying electric field effects on chemical reactivity is highly important for revealing the intrinsic mechanisms of molecular behaviors and mastering chemical reactions. Recently, manipulating the molecular activity using electric fields has emerged as a new research field. In addition, because integration of molecules into electronic devices has the natural complementary metal-oxide-semiconductor compatibility, electric field-driven molecular devices meet the requirements for both electronic device miniaturization and precise regulation of chemical reactions. This Review provides a timely and comprehensive overview of recent state-of-the-art advances, including theoretical models and prototype devices for electric field-based manipulation of molecular activities. First, we summarize the main approaches to providing electric fields for molecules. Then, we introduce several methods to measure their strengths in different systems quantitatively. Subsequently, we provide detailed discussions of electric field-regulated photophysics, electron transport, molecular movements, and chemical reactions. This review intends to provide a technical manual for precise molecular control in devices via electric fields. This could lead to development of new optoelectronic functions, more efficient logic processing units, more precise bond-selective control, new catalytic paradigms, and new chemical reactions.

Programmed Heterostructures for Enhanced Electrical Conductivity

Interfacial electron transport in multicomponent systems plays a crucial role in controlling electrical conductivity. Organic-inorganic heterostructures electronic devices where all the entities are covalently bonded to each other can reduce interfacial electrical resistance, thus suitable for low-power consumption electronic operations. Programmed heterostructures of covalently bonded interfaces between ITO-ethynylbenzene (EB) and EB-zinc ferrite (ZF) nanoparticles, a programmed structure showing 67 978-fold enhancement of electrical current as compared to pristine NPs-based two terminal devices are created. An electrochemical approach is adopted to prepare nearly π-conjugated EB oligomer films of thickness ≈26 nm on ITO-electrode on which ZF NPs are chemically attached. A "flip-chip" method is employed to combine two EB-ZnFe2O4 NPs-ITO to probe electrical conductivity and charge conduction mechanism. The EB-ZnFe2O4 NPs exhibit strong electronic coupling at ITO-EB and EB-NPs with an energy barrier of 0.13 eV between the ITO Fermi level and the LUMO of EB-ZF NPs for efficient charge transport. Both the DC and AC-based electrical measurements manifest a low resistance at ITO-EB and EB-ZF NPs, revealing enhanced electrical current at ± 1.5 V. The programmed heterostructure devices can meet a strategy to create well-controlled molecular layers for electronic applications toward miniaturized components that shorten charge carrier distance, and interfacial resistance.

Human somatosensory systems based on sensor-memory-integrated technology

As a representative artificial neural network (ANN) for incorporating sensing functions and memory functions into one system to achieve highly miniaturized and highly integrated devices or systems, artificial sensory systems (ASSs) can have a far-reaching influence on precise instrumentation, sensing, and automation engineering. Artificial sensory systems have enjoyed considerable progress in recent years, from low degree integrations to highly advanced sophisticated integrations, from single-modal perceptions to multimode-fused perceptions. However, there are issues around the large hardware area, power consumption, and communication bandwidth needed during the processes where multimodal sensing signals are converted into a digital mode before they can be processed by a digital processor. Therefore, deepening the research into sensory integration is of great importance. In this review, we briefly introduce fundamental knowledge about the memristor mechanism, describe some representative human somatosensory systems, and elucidate the relationship between the properties of memristor devices and the structure. The electronic character of the sensors, future prospects, and key challenges surrounding sensor-memory integrated technologies are also discussed.

Thickness-Dependent Charge Transport in Three Dimensional Ru(II)- Tris(phenanthroline)-Based Molecular Assemblies

We describe here the fabrication of large-area molecular junctions with a configuration of ITO/[Ru(Phen)3]/Al to understand temperature- and thickness-dependent charge transport phenomena. Thanks to the electrochemical technique, thin layers of electroactive ruthenium(II)-tris(phenanthroline) [Ru(Phen)3] with thicknesses of 4-16 nm are covalently grown on sputtering-deposited patterned ITO electrodes. The bias-induced molecular junctions exhibit symmetric current-voltage (j-V) curves, demonstrating highly efficient long-range charge transport and weak attenuation with increased molecular film thickness (β = 0.70 to 0.79 nm-1). Such a lower β value is attributed to the accessibility of Ru(Phen)3 molecular conduction channels to Fermi levels of both the electrodes and a strong electronic coupling at ITO-molecules interfaces. The thinner junctions (d = 3.9 nm) follow charge transport via resonant tunneling, while the thicker junctions (d = 10-16 nm) follow thermally activated (activation energy, Ea ∼ 43 meV) Poole-Frenkel charge conduction, showing a clear "molecular signature" in the nanometric junctions.

Many-Body Molecular Interactions in a Memristor

Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This opportunity is not cultivated in molecular memristors because their low-temperature charge transport, which is a route to decipher molecular many-body interactions, is unexplored. To address this, robust, temperature-resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current-voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady-state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.

Chemical Approach Towards Broadband Spintronics on Nanoscale Pyrene Films

The injection of pure spin current into the non-magnetic layer plays a crucial role in transmitting, processing, and storing data information in the realm of spintronics. To understand broadband molecular spintronics, pyrene oligomer film (≈20 nm thickness) was prepared using an electrochemical method forming indium tin oxide (ITO) electrode/pyrene covalent interfaces. Permalloy (Ni80 Fe20 ) films with different nanoscale thicknesses were used as top contact over ITO/pyrene layers to estimate the spin pumping efficiency across the interfaces using broadband ferromagnetic resonance spectra. The spintronic devices are composed of permalloy/pyrene/ITO orthogonal configuration, showing remarkable spin pumping from permalloy to pyrene film. The large spin pumping is evident from the linewidth broadening of 5.4 mT at 9 GHz, which is direct proof of spin angular momentum transfer across the interface. A striking observation is made with the high spin-mixing conductance of ≈1.02×1018  m-2 , a value comparable to the conventional heavy metals. Large spin angular moment transfer was observed at the permalloy-pyrene interfaces, especially at the lower thickness of permalloy, indicating a strong spinterface effect. Pure spin current injection from ferromagnetic into electrochemically grown pyrene films ensures efficient broadband spin transport, which opens a new area in molecular broadband spintronics.

Nanoscale molecular rectifiers

The use of molecules bridged between two electrodes as a stable rectifier is an important goal in molecular electronics. Until recently, however, and despite extensive experimental and theoretical work, many aspects of our fundamental understanding and practical challenges have remained unresolved and prevented the realization of such devices. Recent advances in custom-designed molecular systems with rectification ratios exceeding 10⁵ have now made these systems potentially competitive with existing silicon-based devices. Here, we provide an overview and critical analysis of recent progress in molecular rectification within single molecules, self-assembled monolayers, molecular multilayers, heterostructures, and metal-organic frameworks and coordination polymers. Examples of conceptually important and best-performing systems are discussed, alongside their rectification mechanisms. We present an outlook for the field, as well as prospects for the commercialization of molecular rectifiers.

Electrochemically Deposited Molecular Thin Films on Transparent Conductive Oxide substrate: Combined DC and AC Approaches for Characterization

Transparent conductive oxides such as indium tin oxide (ITO) substrates are commonly employed as prime materials for optoelectronic applications. Enhancement in functions of such devices often compels stable and robust modification of the ITO substrate to improve its interfacial charge transfer characteristics. Thereby, in this work, naphthyl modifier multilayer films are fabricated on ITO substrate using conventional electrochemical reduction of 1-naphthyl diazonium salts (NAPH-D) via altering its concentration ranging from 2 mM to 12 mM with a step size of 2. Surface coverage was significantly tuned by varying NAPH-D concentration, keeping other parameters such as the number of scans and scan rate constant. For lower concentration (2 mM), the molecular thickness ~ 6 nm was obtained, whereas, with higher concentration (12 mM) produced around 15-18 nm thickness. Atomic force microscopy (AFM), cyclic voltammetry and electrochemical impedance spectroscopy (EIS) in the presence of a ferrocene redox probe also supports the formation of well packed molecular film grown on the ITO surface. Further, the wettability property of the grafted naphthyl film was investigated at different surface coverages and correlated with charge transfer resistance (Rct) obtained from EIS studies.

ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO₃ multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO₃ multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO₃-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO₃-based memristive application in artificial intelligence.

Electrochemical Potential-Driven High-Throughput Molecular Electronic and Spintronic Devices: From Molecules to Applications

Molecules are fascinating candidates for constructing tunable and electrically conducting devices by the assembly of either a single molecule or an ensemble of molecules between two electrical contacts followed by current-voltage (I-V) analysis, which is often termed "molecular electronics". Recently, there has been also an upsurge of interest in spin-based electronics or spintronics across the molecules, which offer additional scope to create ultrafast responsive devices with less power consumption and lower heat generation using the intrinsic spin property rather than electronic charge. Researchers have been exploring this idea of utilizing organic molecules, organometallics, coordination complexes, polymers, and biomolecules (proteins, enzymes, oligopeptides, DNA) in integrating molecular electronics and spintronics devices. Although several methods exist to prepare molecular thin-films on suitable electrodes, the electrochemical potential-driven technique has emerged as highly efficient. In this Review we describe recent advances in the electrochemical potential driven growth of nanometric various molecular films on technologically relevant substrates, including non-magnetic and magnetic electrodes to investigate the stimuli-responsive charge and spin transport phenomena.

In Operando Modulation of Rectification in Molecular Tunneling Junctions Comprising Reconfigurable Molecular Self-Assemblies

The reconfiguration of molecular tunneling junctions during operation via the self-assembly of bilayers of glycol ethers is described. Well-established functional groups are used to modulate the magnitude and direction of rectification in assembled tunneling junctions by exposing them to solutions containing different glycol ethers. Variable-temperature measurements confirm that rectification occurs by the expected bias-dependent tunneling-hopping mechanism for these functional groups and that glycol ethers, besides being an unusually efficient tunneling medium, behave similarly to alkanes. Memory bits are fabricated from crossbar junctions prepared by injecting eutectic Ga-In (EGaIn) into microfluidic channels. The states of two 8-bit registers were set by trains of droplets such that they are able to perform logical AND operations on bit strings encoded into chemical packets that alter the composition of the crossbar junctions through self-assembly to effect memristor-like properties. This proof-of-concept work demonstrates the potential for fieldable devices based on molecular tunneling junctions comprising self-assembled monolayers and bilayers.

Functional Redox-Active Molecular Tunnel Junctions

Redox-active molecular junctions have attracted considerable attention because redox-active molecules provide accessible energy levels enabling electronic function at the molecular length scales, such as, rectification, conductance switching, or molecular transistors. Unlike charge transfer in wet electrochemical environments, it is still challenging to understand how redox-processes proceed in solid-state molecular junctions which lack counterions and solvent molecules to stabilize the charge on the molecules. In this minireview, we first introduce molecular junctions based on redox-active molecules and discuss their properties from both a chemistry and nanoelectronics point of view, and then discuss briefly the mechanisms of charge transport in solid-state redox-junctions followed by examples where redox-molecules generate new electronic function. We conclude with challenges that need to be addressed and interesting future directions from a chemical engineering and molecular design perspectives.

Electric-field-driven dual-functional molecular switches in tunnel junctions

To avoid crosstalk and suppress leakage currents in resistive random access memories (RRAMs), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode-one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices and increases the operating voltage as the potential drops over two consecutive junctions¹. Here, we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor, resulting in a molecular-scale 1D-1R RRAM with a current rectification ratio of 2.5 × 10⁴ and resistive on/off ratio of 6.7 × 10³, and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration. This electric-field-driven molecular switch operating in the tunnelling regime enables a class of molecular devices where multiple electronic functions are preprogrammed inside a single molecular layer with a thickness of only 2 nm.

Versatile electrochemical approaches towards the fabrication of molecular electronic devices

We highlight state-of-the-art electrochemical approaches for diazonium electroreduction on various electrodes that may be suitable for flexible molecular electronic junctions.

Introducing mesoscopic charge transfer rates into molecular electronics

It has been demonstrated that the concept of mesoscopic rate is able to establish a bridge between electrochemical and molecular electronic concepts.

Extent of conjugation in diazonium-derived layers in molecular junction devices determined by experiment and modelling

This paper shows that molecular layers grown using diazonium chemistry on carbon surfaces have properties indicative of the presence of a variety of structural motifs. Molecular layers grown with aromatic monomers with thickness between 1 and ∼15 nm display optical absorption spectra with significant broadening but no change in band gap or onsets of absorption as a function of layer thickness. This suggests that there is no extended conjugation in these layers, contrary to the conclusions of previous work. Density-functional theory modelling of the non-conjugated versions of the constituent aromatic monomers reveals that the experimental trends in optical spectra can be recovered, thereby establishing limits to the degree of conjugation and the nature of the order of as-grown molecular layers. We conclude that the absence of both shifts in band gap and changes in absorption onset is a consequence of resonant conjugation within the layers being less than 1.5 monomer units, and that film disorder is the main origin of the optical spectra. These findings have important implications for understanding charge transport mechanisms in molecular junction devices, as the layers cannot be expected to behave as ideal, resonantly conjugated films, but should be viewed as a collection of mixed nonresonantly- and resonantly-conjugated monomers.