Reactions of Nitromethane on Si(100): First-Principles Predictions

Evolution of CH3NO2/Si interfacial chemistry under reaction conditions: a combined experimental and theoretical study

Dissociative adsorption of CH₃NO₂ onto a Si(100)-2 × 1 surface is studied using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) and density functional theory (DFT) calculations.

Comprehensive study of methylation on the silicon (100)-2 × 1 surface: a density functional approach

A detailed mechanistic investigation of Si-Me formation over the silicon (100)-2 × 1 surface using the Si9H12 cluster model has been performed using various reagents, based on two basic mechanisms: dissociation and substitution. The reagents CH4, CH3Cl for dissociation and CH3Li, CH3MgBr for substitution mechanism are used to explore the methylation process on the silicon surface at the M062X/6-311+G(2d, p) level of theory. The associated potential energy surfaces explored here are aimed to unveil the most favored pathway of methylation with appropriate reagents. Dissociation of methane forms a monomethylated product (D1) through an energetically unfavorable pathway. All the adsorption modes of CH3Cl over the silicon surface are also detected and analyzed. Methyl chloride dissociates to form another monomethylated product D2 and its derivative D3 in the entrance channel, while, in the next step, bridged compounds I1 (Cl-bridged) and I2 (H-bridged) are produced from them, respectively. The C-Cl dissociation leads to the formation of D2 having a lower activation barrier. With a comparably high activation barrier in the C-H dissociation, producing D3, very interestingly carbene intermediate has been detected in the reaction pathway. Detection of energetically unfavored conversions from D2 to I1 and D3 to I2 ensured that the methylation process will not be hampered through these interconversions. For substitution, HCl- and Cl2-passivated Si surfaces are taken, where chlorine is to be substituted by the methyl group of both of the methylating agents. With both substituents, HCl-passivated Si9H12 gives D1. The substitution process on Cl2-passivated Si9H12 leads to the formation of D2 in the first step and dimethylated product (S1) in the final step. In all the above substitution processes, methyl lithium proved to be the better substituent for the formations of D1, D2, and S1 on HCl- or Cl2-passivated surfaces. The present work not only demonstrated methyl lithium as one of the best methylating agents but also revealed the interrelation among the dissociative adsorption modes of CH3Cl, reported earlier, in a single potential energy surface with a remarkable detection of carbene intermediate formed in the pathway of C-H dissociation.

Functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by cycloaddition of transition metal oxides: a theoretical prediction

The viability of functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by traditional [3 + 2] cycloaddition of transition metal oxides has been predicted using effective cluster models in the framework of density functional theory. The cycloaddition of transition metal oxides (OsO(4), RuO(4), and MnO(4)(-)) onto the X (100) (X = C, Si, and Ge) surface is much more facile than that of other molecular analogues including ethylene, fullerene, and single-walled carbon nanotubes because of the high reactivity of surface dimers of X (100). Our computational results demonstrate the plausibility that the well-known [3 + 2] cycloaddition of transition metal oxides to alkenes in organic chemistry can be employed as a new type of surface reaction to functionalize the semiconductor X (100) surface, which offers the new possibility for self-assembly or chemical functionalization of X (100) at low temperature. More importantly, the chemical functionalization of X (100) by cycloaddition of transition metal oxides provides the molecular basis for preparation of semiconductor-supported catalysts but also strongly advances the concept of using organic reactions to modify the solid surface, particularly to modify the semiconductor C (100), Si (100), and Ge (100) surfaces for target applications in numerous fields such as microelectronics and heterogeneous photocatalysis.

Chemistry of 1,1,1,5,5,5-Hexafluoro-2,4-pentanedione on Si(100)-2×1

The surface chemistry of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hfacH), a hydrogenated form of the most common ligand in metal and metal oxide deposition, on Si(100)-2x1 has been investigated using multiple internal reflection Fourier transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES), thermal desorption mass spectrometry, and computational analysis. The main goal of these studies was to understand if hfacH is a source of fluorine, carbon, and oxygen contamination for a variety of deposition processes where the hfac ligand is involved. In its molecular form, hfacH may potentially have up to 10 isomers including two ketonic and eight enolic forms. One of the enolic forms is shown to be the most stable upon adsorption on a clean Si(100)-2x1 surface at submonolayer coverages at cryogenic temperatures. Even though only the enolic form is present at cryogenic temperatures, at room temperature any of these isomers can exist and all the possibilities of their interaction with the Si(100)-2x1 surface, including several [2 + 2] and [2 + 4] addition pathways as well as O-H dissociation, should be considered. Despite such an array of possibilities, the room-temperature adsorption is governed by the thermodynamic stability of the final addition products between the hfacH and silicon surface. These adducts are stable at room temperature and decompose upon surface annealing.

Mechanism and Regioselectivity for the Reactions of Propylene Oxide with X(100)-2×1 Surfaces (X = C, Si, Ge): A Density Functional Cluster Model Investigation

We have performed density functional cluster model calculations to explore the mechanism and regioselectivity for the reactions of propylene oxide with X(100)-2x1 surfaces (X = C, Si, and Ge). The computations reveal the following: (i) the reactions on Si(100) and Ge(100) are barrierless and highly exothermic; (ii) the reactions on X(100) (X = Si and Ge) are initiated by the formation of a dative-bonded precursor state followed by regioselective cleavage of the C2-O bond (C2 directly connected to the methyl-substituent) in propylene oxide, giving rise to a five-membered ring surface species; and (iii) the reaction on C(100), although highly exothermic, requires a large activation energy and would be kinetically forbidden at room temperature.

Selective Functionalization of the Si(100) Surface by a Bifunctional Alkynylamine Molecule: Density Functional Study of the Switching Adsorption Linkage. 2

The reaction of the bifunctional organic molecule 1-(dimethylamino)-2-propyne (DMAP) on the Si(100) surface has been investigated by density functional calculations employing a two-dimer cluster model. We found that, once in the physisorbed dative bonded well (-20.0 kcal mol(-1)), DMAP can proceed via a number of pathways, involving the formation of Si-C sigma bonds, which lead to thermodynamically more stable configurations. We first considered the cycloaddition of the CC triple bond, leading to a Si-C di-sigma bonded product (-58.7 kcal mol(-1)), for which we computed an energy barrier of only 12.5 kcal mol(-1), consistently with the observed switching of DMAP adsorption linkage at 300 K. We also explored the dissociative pathway involving the methylene C-H bond cleavage on the dative bonded DMAP, leading to three adsorption products with one (-57.3 kcal mol(-1)) and three Si-C sigma bonds (-58.7 and -60.6 kcal mol(-1)). The energy barrier for this pathway is computed 24.7 kcal mol(-1) and may therefore compete at temperature above 300 K with the reaction pathway involving the addition of the alkyne unit.

Nitro Group as a Means of Attaching Organic Molecules to Silicon: Nitrobenzene on Si(100)-2 × 1

This paper will present the computational and experimental infrared studies of the reactions of nitrobenzene on a Si(100) surface, a prototypical model reaction for understanding the behavior of bifunctional molecules on semiconductor surfaces. The initial reaction of nitrobenzene with the Si(100)-2 x 1 occurs via 1,3-dipolar cycloaddition of the nitro group to the silicon surface dimer. Computational exploration of the initial adsorption configurations suggests that two stable structures can be formed: one with the phenyl ring essentially perpendicular to the surface; the other one with the tilt angle of approximately 113 degrees with respect to the surface normal. The barrier for converting the latter into the former, more stable by approximately 13 kJ/mol, is 19.1 kJ/mol. Further thermal reactions are analyzed, and the reaction pathways are compared for the computational models with fixed vs relaxed subsurface silicon atoms. While all the surface species resulting from nitrobenzene transformations on the Si(100)-2 x 1 surface studied here are thermodynamically stable, most of the reaction pathways can be ruled out on the basis of the analysis of the transition states leading to these species and on the comparison of predicted and measured vibrational spectra. As a result, the exact adsorption configurations can be pinpointed.

Organic functionalization of the Si (100) and Ge (100) surfaces by cycloadditions of carbenes and nitrenes: a theoretical prediction

By means of density functional theory (B3LYP/6-31G*) coupled with effective cluster models, we predict that the well-known cycloaddition reactions of carbenes and nitrenes to alkenes in organic chemistry can be employed as a new type of surface reaction to organically functionalize the Si (100) and Ge (100) surfaces at low temperature. The well-established abundance of carbenes and nitrenes addition chemistry in organic chemistry provides versatile flexibility of functionalizing the surfaces of Si (100) and Ge (100), which can potentially impart new organic functionalities to the semiconductors surface for novel applications in a diversity of fields. Our predictions strongly advance the concept of using organic reactions to modify the solid surface in a controlled manner and quite intriguing chemistry can lie in the material featuring the analogous bonding motif. In further perspective, implications for other theoretical work, regarding disilenes, digermenes, silenes, and germenes that all feature the bonding motif similar to alkenes, are also discussed.

Theoretical Study on Reactions of Nitroethylene with the Si(100)-2 × 1 Surface

Possible reaction pathways of nitroethylene with the Si(100)-2 x 1 surface have been investigated by unrestricted density functional theory. The facile occurrence of the studied reactions was demonstrated by the low activation energies of the rate-determining steps (1.07-5.23 kcal/mol). It was found that the [4 + 2] cycloaddition reaction of nitroethylene is most kinetically favorable. The isomerization reactions of the addition products were also investigated. The [3 + 2] cycloaddition product may further undergo a rearrangement by overcoming a 12.37 kcal/mol activation energy barrier into an isomer, with an oxygen atom of the nitryl group inserted between two silicon atoms of the Si(100) surface.

Electronic Excited States of Si(100) and Organic Molecules Adsorbed on Si(100)

The electronically excited states of the Si(100) surface and acetylene, benzene, and 9,10-phenanthrenequinone adsorbed on Si(100) are studied with time-dependent density functional theory. The computational cost of these calculations can be reduced through truncation of the single excitation space. This allows larger cluster models of the surface in conjunction with large adsorbates to be studied. On clean Si(100), the low-lying excitations correspond to transitions between the pi orbitals of the silicon-silicon dimers. These excitations are predicted to occur in the range 0.4-2 eV. When organic molecules are adsorbed on the surface, surface --> molecule, molecule --> surface, and electronic excitations localized within the adsorbate are also observed at higher energies. For acetylene and benzene, the remaining pipi* excitations are found to lie at lower energies than in the corresponding gas-phase species. Even though the aromaticity of 9,10-phenanthrenequinone is retained, significant shifts in the pipi* excitations of the aromatic rings are predicted. This is in part due to structural changes that occur upon adsorption.

A DFT study of the 1,3-dipolar cycloadditions on the C(100)-2 x 1 surface

The 1,3-dipolar cycloadditions (1,3-DCs) of a series of 1,3-dipolar molecules onto the C(100)-2 x 1 surface have been investigated by means of hybrid density functional B3LYP method in combination with cluster model approach. It was found that 1,3-DCs on the C(100)-2 x 1 surface are more favorable over their molecular analogues both thermodynamically and kinetically. The enhancement of the reactivity on the surface due to the reduced overlap between the p(pi) orbitals of the surface C=C dimer should be important for the semiconductor industry because it might lead to a breakthrough in the fabrication of diamond films at low temperature.

Cycloaddition of carbonyl compounds on Si(100): new mechanisms and approaches to selectivity for surface cycloaddition reactions

Density functional theory has been used to explore cycloaddition reactions of organic molecules containing carbonyl functional groups on the Si(100) surface. As with other pi bonds, carbonyl groups can add to the surface by a [2+2] cycloaddition with negligible activation barrier, as previously shown through experiment. However, the present calculations indicate that 1,2-dicarbonyls, such as glyoxal, may also react by means of a [4+2] addition to form a hetero-Diels-Alder product in which the organic ring stands normal to the surface. Calculations of [2+2] and [4+2] pathways indicate that both reactions proceed without significant barriers. This reactivity is analogous to that of conjugated dienes, in which evidence for both reactions has been observed. In contrast to unsaturated alkyl systems, which must react through the pi electron system, the reactions of carbonyls may proceed through a very different mechanism, in which the initial surface interaction is through the oxygen lone pair. The presence of lone pairs affects the geometry of the [4+2] adduct, and may alter the competition between [2+2] and [4+2] addition. Some potential rearrangement reactions of the initial binding products are described. Recent experimental studies of a 1,2-dicarbonyl on Si(100) are reinterpreted in light of these calculations, and found to be consistent with the presence of the [4+2] adduct. Finally, some molecules are suggested as cycloaddition reagents for experimental tests of the conclusions presented here.