Controllable Interconnection of Single-Walled Carbon Nanotubes under AC Electric Field

Step-Wise Deposition Process for Dielectrophoretic Formation of Conductive 50-Micron-Long Carbon Nanotube Bridges

Carbon Nanotube (CNT) agglomerates can be aligned along field lines between adjacent electrodes to form conductive bridges. This study discusses the step-wise process of dielectrophoretic deposition of CNTs to form conducting bridges between adjacent electrodes. For the first time, the creation of conductive CNT bridges spanning lengths over 50 microns is demonstrated. The CNT bridges are permanently secured using electrodeposition of the conducting polymer polypyrrole. Morphologies of the CNT bridges formed within a frequency range of 1 kHz and 10 MHz are explored and explained as a consequence of interplay between dielectrophoretic and electroosmotic forces. Postdeposition heat treatment increases the conductivity of CNT bridges, likely due to solvent evaporation and resulting surface tension inducing better contact between CNTs.

Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future

Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.

Investigation of Transport Properties of Water-Methanol Solution through a CNT with Oscillating Electric Field

Molecular dynamics simulations were used to investigate the transport properties of water-methanol solution getting through a carbon nanotube (CNT) with an oscillating electric field. Eight alternating electric fields with different oscillation periods were used in this work. Under the oscillating electric field, water molecules have the advantage of occupying a CNT over methanol molecules. Meanwhile, the space occupancy of water-methanol solution in the CNT increases as the oscillating period increases. More importantly, we found that the oscillating period of electric field affects the van der Waals interaction of the solution inside the CNT and the shell of the CNT, which results in the change in the number of hydrogen bonds in the water-methanol solution confined in the CNT. And the change in the hydrogen-bond network leads to the change in transport properties of water-methanol solution.

Indentation Tests Reveal Geometry-Regulated Stiffening of Nanotube Junctions

Here we report a unique method to locally determine the mechanical response of individual covalent junctions between carbon nanotubes (CNTs), in various configurations such as "X", "Y", and "Λ"-like. The setup is based on in situ indentation using a picoindenter integrated within a scanning electron microscope. This allows for precise mapping between junction geometry and mechanical behavior and uncovers geometry-regulated junction stiffening. Molecular dynamics simulations reveal that the dominant contribution to the nanoindentation response is due to the CNT walls stretching at the junction. Targeted synthesis of desired junction geometries can therefore provide a "structural alphabet" for construction of macroscopic CNT networks with tunable mechanical response.

Self-assembly of collagen building blocks guided by electric fields

Show me the way: protein building blocks are programmed to assemble hierarchically and yield a defined fiber morphology of micrometric length and precise nanometric diameter. The key step of this method is to align the building blocks with an AC field prior to assembly. The resulting protein nanofibers are straightforwardly integrated with the circuitry for potential applications in bionanotechnology.

Electric field alignment of nanofibrillated cellulose (NFC) in silicone oil: impact on electrical properties

This work aims to study how the magnitude, frequency, and duration of an AC electric field affect the orientation of two kinds of nanofibrillated cellulose (NFC) dispersed in silicone oil that differ by their surface charge density and aspect ratio. In both cases, the electric field alignment occurs in two steps: first, the NFC makes a gyratory motion oriented by the electric field; second, NFC interacts with itself to form chains parallel to the electric field lines. It was also observed that NFC chains become thicker and longer when the duration of application of the electric field is increased. In-situ dielectric properties have shown that the dielectric constant of the medium increases in comparison to the randomly dispersed NFC (when no electric field is applied). The optimal parameters of alignment were found to be 5000 Vpp/mm and 10 kHz for a duration of 20 min for both kinds of NFC. The highest increase in dielectric constant was achieved with NFC oxidized for 5 min (NFC-O-5 min) at the optimum conditions mentioned above.

Electric field guided assembly of one-dimensional nanostructures for high performance sensors

Various nanowire or nanotube-based devices have been demonstrated to fulfill the anticipated future demands on sensors. To fabricate such devices, electric field-based methods have demonstrated a great potential to integrate one-dimensional nanostructures into various forms. This review paper discusses theoretical and experimental aspects of the working principles, the assembled structures, and the unique functions associated with electric field-based assembly. The challenges and opportunities of the assembly methods are addressed in conjunction with future directions toward high performance sensors.

Joining carbon nanotubes

To fully exploit the exceptional electronic and mechanical properties of carbon nanotubes in real-world applications, it is desirable to create carbon nanotube networks in which separate, multiple nanotubes are joined so that as many as possible of the properties of single nanotubes are conserved. In this review we summarize the progress made towards this goal, covering techniques including electron and ion beam irradiation, Joule heating and spark plasma sintering.

The current image of single SnO2 nanobelt nanodevice studied by conductive atomic force microscopy

A single SnO2 nanobelt was assembled on a pair of Au electrodes by electric-field assembly method. The electronic transport property of single SnO2 nanobelt was studied by conductive atomic force microscopy (C-AFM). Back-to-back Schottky barrier-type junctions were created between AFM tip/SnO2 nanobelt/Au electrode which can be concluded from the I-V curve. The current images of single SnO2 nanobelt nanodevices were also studied by C-AFM techniques, which showed stripes patterns on the nanobelt surface. The current images of the nanobelt devices correlate the microscopy with separate transport properties measurement together.

Selective deposition and alignment of single-walled carbon nanotubes assisted by dielectrophoresis: from thin films to individual nanotubes

Dielectrophoresis has been used in the controlled deposition of single-walled carbon nanotubes (SWNTs) with the focus on the alignment of nanotube thin films and their applications in the last decade. In this paper, we extend the research from the selective deposition of SWNT thin films to the alignment of small nanotube bundles and individual nanotubes. Electrodes with "teeth"-like patterns are fabricated to study the influence of the electrode width on the deposition and alignment of SWNTs. The entire fabrication process is compatible with optical lithography-based techniques. Therefore, the fabrication cost is low, and the resulting devices are inexpensive. A series of SWNT solutions is prepared with concentrations ranging from 0.0125 to 0.2 mg/ml. The alignment of SWNT thin films, small bundles, and individual nanotubes is achieved under the optimized experimental conditions. The electrical properties of these samples are characterized; the linear current-voltage plots prove that the aligned SWNTs are mainly metallic nanotubes. The microscopy inspection of the samples demonstrates that the alignment of small nanotube bundles and individual nanotubes can only be achieved using narrow electrodes and low-concentration solutions. Our investigation shows that it is possible to deposit a controlled amount of SWNTs in desirable locations using dielectrophoresis.

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

Ordered Mesostructured CdS Nanowire Arrays with Rectifying Properties

Highly ordered mesoporous CdS nanowire arrays were synthesized by using mesoporous silica as hard template and cadmium xanthate (CdR(2)) as a single precursor. Upon etching silica, mesoporous CdS nanowire arrays were produced with a yield as high as 93 wt%. The nanowire arrays were characterized by XRD, N(2) adsorption, TEM, and SEM. The results show that the CdS products replicated from the mesoporous silica SBA-15 hard template possess highly ordered hexagonal mesostructure and fiber-like morphology, analogous to the mother template. The current-voltage characteristics of CdS nanoarrays are strongly nonlinear and asymmetrical, showing rectifying diode-like behavior.

Bulk electrical properties of single-walled carbon nanotubes immobilized by dielectrophoresis: evidence of metallic or semiconductor behavior

We report the electrical characterization of single-walled carbon nanotubes (SWCNTs) trapped between two electrodes by dielectrophoresis (DEP). At high frequency, SWCNTs collected by DEP are expected to be of metallic type. Indeed current-voltage (I-V) measurements for devices made at 10 MHz show high values of conductivity and exhibit metallic behavior with linear and symmetric electrical features attributed to ohmic conduction. At low frequency, SWCNTs attracted by DEP are expected to be of semiconducting nature. Devices made at 10 kHz behave as semiconductors and demonstrate nonlinear and rectifying electrical characteristics with conductivities many orders of magnitude below the sample resulting from high-frequency immobilization of SWCNTs. Conducting atomic force microscopy (C-AFM) and current density calculation results are presented to reinforce results obtained by I-V measurements which clearly show type separation of SWCNTs after DEP experiments.