1
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Hsin CL, Hsiao JC, Chen YM, Lee SW. Thermoelectric properties of Zn- and Ce-alloyed In 2O 3and the effect of SiO 2nanoparticle additives. NANOTECHNOLOGY 2022; 33:135712. [PMID: 34905736 DOI: 10.1088/1361-6528/ac4307] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Accepted: 12/14/2021] [Indexed: 06/14/2023]
Abstract
Thermoelectric materials are considered promising candidates for thermal energy conversion. This study presents the fabrication of Zn- and Ce-alloyed In2O3with a porous structure. The electrical conductivity was improved by the alloying effect and an ultra-low thermal conductivity was observed owing to the porous structure, which concomitantly provide a distinct enhancement ofZT. However, SiO2nanoparticle additives react with the matrix to form a third-phase impurity, which weakens the electrical conductivity and increases the thermal conductivity. A thermoelectric module was constructed for the purpose of thermal heat energy conversion. Our experimental results proved that both an enhancement in electrical conductivity and a suppression in thermal conductivity could be achieved through nano-engineering. This approach presents a feasible route to synthesize porous thermoelectric oxides, and provides insight into the effect of additives; moreover, this approach is a cost-effective method for the fabrication of thermoelectric oxides without traditional hot-pressing and spark-plasma-sintering processes.
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Affiliation(s)
- Cheng-Lun Hsin
- Department of Electrical Engineering, National Central University, Taoyuan 32001, Taiwan
| | - Jen-Che Hsiao
- Department of Electrical Engineering, National Central University, Taoyuan 32001, Taiwan
| | - You-Ming Chen
- Department of Electrical Engineering, National Central University, Taoyuan 32001, Taiwan
| | - Sheng-Wei Lee
- Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
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2
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Williamson BA, Limburn GJ, Watson GW, Hyett G, Scanlon DO. Computationally Driven Discovery of Layered Quinary Oxychalcogenides: Potential p-Type Transparent Conductors? MATTER 2020; 3:759-781. [PMID: 34708195 PMCID: PMC8523359 DOI: 10.1016/j.matt.2020.05.020] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2019] [Revised: 03/12/2020] [Accepted: 05/20/2020] [Indexed: 05/12/2023]
Abstract
n-type transparent conductors (TCs) are key materials in the modern optoelectronics industry. Despite years of research, the development of a high-performance p-type TC has lagged far behind that of its n-type counterparts, delaying the advent of "transparent electronics"-based p-n junctions. Here, we propose the layered oxysulfide [Cu2S2][Sr3Sc2O5] as a structural motif for discovering p-type TCs. We have used density functional theory to screen 24 compositions based on this motif in terms of their thermodynamic and dynamic stability and their electronic structure, thus predicting two p-type TCs and eight other stable systems with semiconductor properties. Following our predictions, we have successfully synthesized our best candidate p-type TC, [Cu2S2][Ba3Sc2O5], which displays structural and optical properties that validate our computational models. It is expected that the design principles emanating from this analysis will move the field closer to the realization of a high figure-of-merit p-type TC.
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Affiliation(s)
- Benjamin A.D. Williamson
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK
- Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, UK
- Corresponding author
| | - Gregory J. Limburn
- Department of Chemistry, University of Southampton, Southampton SO17 1BJ, UK
| | - Graeme W. Watson
- School of Chemistry and CRANN, Trinity College Dublin, The University of Dublin, College Green, Dublin 2, Ireland
| | - Geoffrey Hyett
- Department of Chemistry, University of Southampton, Southampton SO17 1BJ, UK
- Corresponding author
| | - David O. Scanlon
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK
- Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, UK
- Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, UK
- Corresponding author
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3
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Sun Y, Dong T, Yu L, Xu J, Chen K. Planar Growth, Integration, and Applications of Semiconducting Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903945. [PMID: 31746050 DOI: 10.1002/adma.201903945] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Revised: 10/05/2019] [Indexed: 06/10/2023]
Abstract
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
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Affiliation(s)
- Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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4
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Ben-Zvi R, Burrows H, Schvartzman M, Bitton O, Pinkas I, Kaplan-Ashiri I, Brontvein O, Joselevich E. In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy. ACS NANO 2019; 13:5572-5582. [PMID: 30995393 PMCID: PMC6994061 DOI: 10.1021/acsnano.9b00538] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Accepted: 04/17/2019] [Indexed: 06/09/2023]
Abstract
The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.
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Affiliation(s)
- Regev Ben-Zvi
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Hadassah Burrows
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Mark Schvartzman
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ora Bitton
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Iddo Pinkas
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ifat Kaplan-Ashiri
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Olga Brontvein
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ernesto Joselevich
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
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5
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Oksenberg E, Martí-Sánchez S, Popovitz-Biro R, Arbiol J, Joselevich E. Surface-Guided Core-Shell ZnSe@ZnTe Nanowires as Radial p-n Heterojunctions with Photovoltaic Behavior. ACS NANO 2017; 11:6155-6166. [PMID: 28505415 DOI: 10.1021/acsnano.7b02199] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface-material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. Here, we demonstrate the guided growth of horizontal core-shell nanowires, specifically of ZnSe@ZnTe, with control over their crystal phase and crystallographic orientations. We exploit the directional control of the guided growth for the parallel production of multiple radial p-n heterojunctions and probe their optoelectronic properties. The devices exhibit a rectifying behavior with photovoltaic characteristics upon illumination. Guided nanowire heterostructures enable the bottom-up assembly of complex semiconductor structures with controlled electronic and optoelectronic properties.
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Affiliation(s)
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST) , Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
| | | | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST) , Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
- ICREA , Pg. Lluís Companys 23, 08010 Barcelona, Catalonia, Spain
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6
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Reut G, Oksenberg E, Popovitz-Biro R, Rechav K, Joselevich E. Guided Growth of Horizontal p-Type ZnTe Nanowires. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2016; 120:17087-17100. [PMID: 27885331 PMCID: PMC5117751 DOI: 10.1021/acs.jpcc.6b05191] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2016] [Revised: 07/03/2016] [Indexed: 05/13/2023]
Abstract
A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor-liquid-solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means.
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Affiliation(s)
- Gilad Reut
- Department of Materials and Interfaces and Chemical Research Support, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Eitan Oksenberg
- Department of Materials and Interfaces and Chemical Research Support, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Ronit Popovitz-Biro
- Department of Materials and Interfaces and Chemical Research Support, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Katya Rechav
- Department of Materials and Interfaces and Chemical Research Support, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Ernesto Joselevich
- Department of Materials and Interfaces and Chemical Research Support, Weizmann Institute of Science, Rehovot 76100, Israel
- E-mail:
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7
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Oksenberg E, Popovitz-Biro R, Rechav K, Joselevich E. Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3999-4005. [PMID: 26011601 DOI: 10.1002/adma.201500736] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2015] [Revised: 04/21/2015] [Indexed: 05/25/2023]
Abstract
Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices.
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Affiliation(s)
- Eitan Oksenberg
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Ronit Popovitz-Biro
- Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Katya Rechav
- Chemical Research Support, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Ernesto Joselevich
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 7610001, Israel
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8
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Xu L, Dai Z, Duan G, Guo L, Wang Y, Zhou H, Liu Y, Cai W, Wang Y, Li T. Micro/Nano gas sensors: a new strategy towards in-situ wafer-level fabrication of high-performance gas sensing chips. Sci Rep 2015; 5:10507. [PMID: 26001035 PMCID: PMC5377049 DOI: 10.1038/srep10507] [Citation(s) in RCA: 48] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2014] [Accepted: 04/15/2015] [Indexed: 11/09/2022] Open
Abstract
Nano-structured gas sensing materials, in particular nanoparticles, nanotubes, and nanowires, enable high sensitivity at a ppb level for gas sensors. For practical applications, it is highly desirable to be able to manufacture such gas sensors in batch and at low cost. We present here a strategy of in-situ wafer-level fabrication of the high-performance micro/nano gas sensing chips by naturally integrating microhotplatform (MHP) with nanopore array (NPA). By introducing colloidal crystal template, a wafer-level ordered homogenous SnO2 NPA is synthesized in-situ on a 4-inch MHP wafer, able to produce thousands of gas sensing units in one batch. The integration of micromachining process and nanofabrication process endues micro/nano gas sensing chips at low cost, high throughput, and with high sensitivity (down to ~20 ppb), fast response time (down to ~1 s), and low power consumption (down to ~30 mW). The proposed strategy of integrating MHP with NPA represents a versatile approach for in-situ wafer-level fabrication of high-performance micro/nano gas sensors for real industrial applications.
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Affiliation(s)
- Lei Xu
- 1] Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China [2] California Institute of Technology, Pasadena, California 91125, USA
| | - Zhengfei Dai
- Key Lab of Materials Physics, Anhui Key lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, Anhui, China
| | - Guotao Duan
- Key Lab of Materials Physics, Anhui Key lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, Anhui, China
| | - Lianfeng Guo
- Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yi Wang
- Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Hong Zhou
- Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanxiang Liu
- Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Weiping Cai
- Key Lab of Materials Physics, Anhui Key lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, Anhui, China
| | - Yuelin Wang
- Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Tie Li
- Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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9
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Shen Y, Turner S, Yang P, Van Tendeloo G, Lebedev OI, Wu T. Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations. NANO LETTERS 2014; 14:4342-4351. [PMID: 24971997 DOI: 10.1021/nl501163n] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires.
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Affiliation(s)
- Youde Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore
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10
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Wan N, Xu J, Sun LT, Lin T. ITO bi-crystal nanowires follow a grain boundary assistant growth mode. CrystEngComm 2013. [DOI: 10.1039/c3ce00039g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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11
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Huang H, Liang B, Liu Z, Wang X, Chen D, Shen G. Metal oxide nanowire transistors. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm31679j] [Citation(s) in RCA: 41] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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12
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Hsin CL, Lee WF, Huang CT, Huang CW, Wu WW, Chen LJ. Growth of CuInSe2 and In2Se3/CuInSe2 nano-heterostructures through solid state reactions. NANO LETTERS 2011; 11:4348-51. [PMID: 21859092 DOI: 10.1021/nl202463w] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In(2)Se(3) is an essential phase change material and CuInSe(2) is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the solar energy material via the solid state reaction. The In(2)Se(3) nanobelts (NBs) were synthesized via the vapor-liquid-solid mechanism. The chemical composition and the optical properties were investigated by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and reflectance and photoluminescence spectra. In the in situ observation of the solid state reaction with Cu to form the CuInSe(2) NBs with ultrahigh vacuum transmission electron microscopy, we observed the In(2)Se(3)/CuInSe(2) transformation at atomic scale in real time. The progression of the atomic layer at the interface provided the pertinent information on the kinetic mechanism. In(2)Se(3)/CuInSe(2) nano-heterostructures were also obtained in the present investigation. The approach to the CIGS nanosolar cell was also proposed. This study shall be beneficial in the development of high-performance nanowire solar cells and nanodevices with In(2)Se(3)/CuInSe(2) nano-heterostructures.
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Affiliation(s)
- Cheng-Lun Hsin
- Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 300, Taiwan, Republic of China
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13
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Li Z, Zhang M, Meng A. Synthesis and mechanism of single-crystalline β-SiC nanowire arrays on a 6H-SiC substrate. CrystEngComm 2011. [DOI: 10.1039/c0ce00744g] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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14
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Hsin CL, Yu SY, Wu WW. Cobalt silicide nanocables grown on Co films: synthesis and physical properties. NANOTECHNOLOGY 2010; 21:485602. [PMID: 21060142 DOI: 10.1088/0957-4484/21/48/485602] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples annealed in air ambient at 900 °C for 1 h. The nanocable structure came to a clear conclusion that the thermal stability of the silicide nanowires can be resolved by the shell encapsulation. Cobalt silicide nanowires were obtained from the nanocable structure. The electrical properties of the CoSi nanowires have been found to be compatible with their thin film counterpart and a high maximum current density of the nanowires has been measured. One way to obtain silicate nanowires has been demonstrated. The silicate compound, which is composed of cobalt, silicon and oxygen, was achieved. The Co silicide/oxide nanocables are potentially useful as a key component of silicate nanowires, interconnects and magnetic units in nanoelectronics.
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Affiliation(s)
- Cheng-Lun Hsin
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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15
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Yuan GD, Zhou YB, Guo CS, Zhang WJ, Tang YB, Li YQ, Chen ZH, He ZB, Zhang XJ, Wang PF, Bello I, Zhang RQ, Lee CS, Lee ST. Tunable electrical properties of silicon nanowires via surface-ambient chemistry. ACS NANO 2010; 4:3045-3052. [PMID: 20565140 DOI: 10.1021/nn1001613] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
p-Type surface conductivity is a uniquely important property of hydrogen-terminated diamond surfaces. In this work, we report similar surface-dominated electrical properties in silicon nanowires (SiNWs). Significantly, we demonstrate tunable and reversible transition of p(+)-p-i-n-n(+) conductance in nominally intrinsic SiNWs via changing surface conditions, in sharp contrast to the only p-type conduction observed on diamond surfaces. On the basis of Si band energies and the electrochemical potentials of the ambient (pH value)-determined adsorbed aqueous layer, we propose an electron-transfer-dominated surface doping model, which can satisfactorily explain both diamond and silicon surface conductivity. The totality of our observations suggests that nanomaterials can be described as a core-shell structure due to their large surface-to-volume ratio. Consequently, controlling the surface or shell in the core-shell model represents a universal way to tune the properties of nanostructures, such as via surface-transfer doping, and is crucial for the development of nanostructure-based devices.
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Affiliation(s)
- G D Yuan
- Centre of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
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16
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Yoo Y, Yoon I, Lee H, Ahn J, Ahn JP, Kim B. Pattern-selective epitaxial growth of twin-free Pd nanowires from supported nanocrystal seeds. ACS NANO 2010; 4:2919-2927. [PMID: 20455529 DOI: 10.1021/nn100151c] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
We report that twin-free single-crystalline Pd nanowire (NW) arrays grow epitaxially in a selected pattern on a substrate. Parallel aligned Pd NWs are synthesized on a SrTiO(3) (110) substrate in a very high density. On a SrTiO(3) (001) substrate, Pd NWs grow horizontally in two perpendicular directions. Vertical Pd NWs are synthesized instead of horizontal NWs when a c-cut sapphire substrate is employed. We reveal that the atomic structure of the substrate surface determines the geometry and orientation of seeds, which in turn direct the growth patterns of the NWs. The interface energy between the NW material and the substrate is also critical in determining the NW growth pattern. Polarization-dependent localized surface plasmon resonance of as-synthesized epitaxial Pd NW arrays is investigated for application as a plasmonic platform.
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Affiliation(s)
- Youngdong Yoo
- Department of Chemistry, KAIST, Daejeon 305-701, Korea
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17
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Guo CS, Luo LB, Yuan GD, Yang XB, Zhang RQ, Zhang WJ, Lee ST. Surface Passivation and Transfer Doping of Silicon Nanowires. Angew Chem Int Ed Engl 2009; 48:9896-900. [DOI: 10.1002/anie.200904890] [Citation(s) in RCA: 54] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Guo CS, Luo LB, Yuan GD, Yang XB, Zhang RQ, Zhang WJ, Lee ST. Surface Passivation and Transfer Doping of Silicon Nanowires. Angew Chem Int Ed Engl 2009. [DOI: 10.1002/ange.200904890] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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19
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He JH, Ho CH, Chen CY. Polymer functionalized ZnO nanobelts as oxygen sensors with a significant response enhancement. NANOTECHNOLOGY 2009; 20:065503. [PMID: 19417388 DOI: 10.1088/0957-4484/20/6/065503] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
A plasma-polymerized acrylonitrile (PP-AN)/ZnO nanobelt (NB) nanosensor reveals a better oxygen-sensing response than a bare ZnO NB nanosensor due to the sorption nature of the polymer. With the aid of UV light, significant response enhancements of PP-AN/ZnO NB nanosensors at low temperature have been observed since the effects of oxygen desorption/adsorption in PP-AN on the electron depletion region in the ZnO are significant. The minimum sensitivity at 150 degrees C is 16.6 ppm. This work permits its feasibility in areas where it is impossible to work at higher temperatures since lowering the working temperature of the sensor can avoid the structural deterioration, causing instability in the response.
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Affiliation(s)
- J H He
- Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.
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Liu H, Cui S, Guo Y, Li Y, Huang C, Zuo Z, Yin X, Song Y, Zhu D. Fabrication of large-area hybrid nanowires arrays as novel field emitters. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b814780a] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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21
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Yuan GD, Zhang WJ, Jie JS, Fan X, Zapien JA, Leung YH, Luo LB, Wang PF, Lee CS, Lee ST. p-Type ZnO nanowire arrays. NANO LETTERS 2008; 8:2591-7. [PMID: 18624388 DOI: 10.1021/nl073022t] [Citation(s) in RCA: 54] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) x 10(18) cm(-3) and a field-effect mobility of 10-17 cm2 V(-2) s(-1). Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices.
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Affiliation(s)
- G D Yuan
- Centre Of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, People's Republic of China
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Sun H, Li X, Chen Y, Li W, Li F, Liu B, Zhang X. The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS. NANOTECHNOLOGY 2008; 19:225601. [PMID: 21825761 DOI: 10.1088/0957-4484/19/22/225601] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm(-2) is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.
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Affiliation(s)
- Hongyu Sun
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao, People's Republic of China
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Kuo CL, Huang MH. The growth of ultralong and highly blue luminescent gallium oxide nanowires and nanobelts, and direct horizontal nanowire growth on substrates. NANOTECHNOLOGY 2008; 19:155604. [PMID: 21825618 DOI: 10.1088/0957-4484/19/15/155604] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report the growth of ultralong β-Ga(2)O(3) nanowires and nanobelts on silicon substrates using a vapor phase transport method. The growth was carried out in a tube furnace, with gallium metal serving as the gallium source. The nanowires and nanobelts can grow to lengths of hundreds of nanometers and even millimeters. Their full lengths have been captured by both scanning electron microscope (SEM) and optical images. X-ray diffraction (XRD) patterns and transmission electron microscope (TEM) images have been used to study the crystal structures of these nanowires and nanobelts. Strong blue emission from these ultralong nanostructures can be readily observed by irradiation with an ultraviolet (UV) lamp. Diffuse reflectance spectroscopy measurements gave a band gap of 4.56 eV for these nanostructures. The blue emission shows a band maximum at 470 nm. Interestingly, by annealing the silicon substrates in an oxygen atmosphere to form a thick SiO(2) film, and growing Ga(2)O(3) nanowires over the sputtered gold patterned regions, horizontal Ga(2)O(3) nanowire growth in the non-gold-coated regions can be observed. These horizontal nanowires can grow to as long as over 10 µm in length. Their composition has been confirmed by TEM characterization. This represents one of the first examples of direct horizontal growth of oxide nanowires on substrates.
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Affiliation(s)
- Chi-Liang Kuo
- Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan
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